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 Division Overview
Division Organization
Sources, Detectors and Displays Group
Optical Fiber and Components Group
Optoelectronics Manufacturing Group
Staff Directory
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How to
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Optoelectronics Division (815.00)
National Institute of
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80305-3328
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497-5342
FAX: (303) 497-7671, -3387
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Page updated: 12/23/2008 |
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December 2008 |
EEEL produces best-in-class
GaN nanowire MESFET
Researchers in the EEEL Optoelectronics Division have demonstrated novel GaN nanowire MESFET devices. These structures are primarily being developed as test elements for use in extracting fundamental transport properties of nanowires. The GaN NW-MESFET devices developed by NIST are the best such devices reported in the world as far as we know. Comparatively, the NIST devices display the best Schottky diode ideality factor, lowest pinch-off voltage, lowest hysteresis, and highest drain-source on-off ratios.
Click here for more information about the GaN nanowire MESFET.
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September 2008 |
EEEL Researchers Develop Robust Algorithm for Eye-Diagram Analysis
EEEL researchers Jeffrey Jargon and Paul Hale, along with Chih-Ming Wang from the NIST Statistical Engineering Division, have developed a new method for analyzing eye diagrams. Eye-diagrams are multivalued displays used for assessing the quality of high-speed digital signals.
Click here for more information about the eye-diagram analysis.
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EEEL Researchers Uncover Missing Light
EEEL Researchers John Lehman, Katherine Hurst, and Lara Roberson, along with collaborators Kathryn Nield and John Hamlin of New Zealand’s Measurement Standards Laboratory, have identified unique features in the reflectance spectra of single-wall carbon nanotubes (SWCNT) that were previously misidentified in the literature as absorbance. In the process, they have demonstrated a novel method for determining SNCWT absorbance that, unlike other published accounts, is independent of sample concentration and does not rely on data post-processing to remove the effects of contaminants.
Click here for more information about the reflectance specta of sing'e-wall carbon nanotubes (SWCNT.)
EEEL develops all-fiber photon pair source with record low noise and high brightness
Researchers in the Optoelectronics Division of EEEL have demonstrated an all-fiber photon-pair source with the highest coincidence-to-accidental ratio (CAR) reported to date in the fiber-optic telecommunications C-band (wavelengths near 1550 nm). Shellee Dyer, Sae Woo Nam, Burm Baek, and Marty Stevens achieved this through careful optimization of pair-production efficiency as well as detailed characterization and minimization of all sources of background photons, including Raman generation in the nonlinear fiber and in the single-mode fiber, and leakage of pump photons.
Click here for more information about the all-fiber photon pair source.
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