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Organic Electronics
    Moisture Transport through Ultra-Low Permeation Barriers
    Chemistry and Orientation with NEXAFS Spectroscopy
Nanoimprint Lithography
  Pattern Transfer and Stability
Polymers for Next-Generation Lithography
  Dissolution Fundamentals
  Surface and Bulk Chemistry of Chemically Amplified Photoresists
  NIST-Industry Partnerships
Dimensional Metrology with Small Angle X-ray Scattering
  Sidewall Angle Metrology
  Dimensional Changes during Fabrication
Characterization of Porous Low-k Dielectric Thin Films
 
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Dissolution Fundamentals

 

Introduction

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Dissolution Fundamentals
  • At 65 nm node on-line in 2007, LER must be < 1.5 nm
  • Dissolution effectively controls LER
  • Interdependent processing steps many experimental methods
  • Extent of developer penetration? Interplay between swelling and dissolution
  • Developer: Influence of ionization?
  • Additives: Source of modified film properties?
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    Experimental Approach

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    Photoresists Ionize: Charge effects
    Photoresists Ionize: Charge effects
     
    Quartz Crystal Microbalance: Mass Transport
    Quartz Crystal Microbalance: Mass Transport     Quartz Crystal Microbalance: Mass Transport
     
    Neutron and X-ray Reflectivity: Depth profile
  • Dry solid films
    •Protection profile (NR)
    •Mass density profile (XR)
  • Liquid Immersed films
    •Water profile (NR)
    •Aqueous base profile (NR)
  • Neutron and X-ray Reflectivity: Depth profile   Neutron and X-ray Reflectivity: Depth profile   Neutron and X-ray Reflectivity: Depth profile
     

    Results: Towards Improved Dissolution Models

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    Dissolution and Swelling: Kinetics
    Dissolution and Swelling: Kinetics
  • 157 nm material shows different dissolution behavior
  • Either swells or swells and dissolves; make affect LER
  • Function of developer strength, but not salt concentration
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    Aqueous Base Profile: Neutron Reflectivity
    Aqueous Base Profile: Neutron Reflectivity
  • First direct measurement of base profile
  • Broad solid-liquid interface early stages of development
  • Diffuse counterion profile at free surface
  • TMA concentration enhanced with base concentration
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    :Line-Edge Roughness: Bilayer Model
    Line-Edge Roughness: Bilayer Model   Line-Edge Roughness: Bilayer Model
  • Reflectivity highlights developer effects on LER
  • Poor LER (74 Å) and CD control for swelling solvent
  • Broad solubility switch, unacceptable
  • Swelling expected only butanol
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    NIST Contributors

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    Vivek M. Prabhu*
    Eric K. Lin
    Wen-li Wu
    Erin L. Jablonski
    Bryan D. Vogt
    Christopher L. Soles
    Ronald L. Jones
    David vanderHart
    Michael Wang
    Sushil Satija
     

    Collaborators:

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    Dario L. Goldfarb(1) , Marie Angelopoulos (1), Hiroshi Ito (2)
    (1) IBM T. J. Watson Research Center, Yorktown Heights, NY
    (2) IBM Almaden Research Center, San Jose, CA
    IBM
     
     
     
     
     
     
     
     
     
     
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    Electronics Materials Group
    Polymers Division
    Materials Science and Engineering Laboratory

     
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