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Nonpolar and Semipolar Group III Nitride-Based Materials
MRS Bulletin | May, 2009


Gallium nitride and its alloys with indium and aluminum nitride have enabled a revolution in solid-state lighting, producing efficient light-emitting diodes and laser diodes spanning a broad range of colors. This issue highlights many of the key developments in nonpolar and semipolar nitride materials and devices.

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Inducing Grain Alignment in Metals, Compounds and Multicomponent Thin Films
James M.E. Harper
From MRS Proceedings Volume 1105E

Abstract: Several methods to induce grain alignment in polycrystalline thin films are discussed, in which directional effects can dominate over the normal evolution of fiber texture during thin film growth. Early experiments with ion beam assisted deposition showed the importance of channeling directions in selecting grain orientations with low sputtering yield or low ion damage energy density. Examples of this approach include the formation of biaxial fiber textures in Nb, Al and AlN. Grain orientations may also be selected by the release of stored energy during abnormal grain growth initiated by solute precipitation (Cu-Co) or phase transformation (TiSi2). Other energy sources such as mechanical deformation, crystallization or compound formation may also contribute to producing desired grain alignments. In multicomponent thin films, combinations of these mechanisms provide opportunities for more specific control of grain orientations.

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