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Published Articles
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- Volume 10, 5 articles.
- Volume 9, 8 articles.
- Volume 8, 8 articles.
- Volume 7, 9 articles.
- Volume 6, 14 articles.
- Volume 5, 12 articles.
- Volume 5S1, 137 articles.
- Volume 4, 16 articles.
- Volume 4S1, 149 articles.
- Volume 3, 54 articles.
- Volume 2, 46 articles.
- Volume 1, 46 articles.
- Keyword Index
- Author Index
- How to Submit
- Proceedings
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Recent Additions
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Sixth Wide Bandgap III-nitride Workshop (Added Wednesday, March 22, 2000)
Report on TMS Workshop on "Doping, Dopants and Carrier Dynamics in Wide Bandgap Semiconductors" in Copper Mountain Resort, Colorado , April 2-6, 2000 (Added Friday, April 21, 2000)
MIJ-NSR Vol. 5, Art. 3, J. Sik et al. (Added Friday, April 21, 2000)
MIJ-NSR Vol. 5, Art. 4, Michael E. Bartram (Added Wednesday, May 3, 2000)
MIJ-NSR Vol. 5, Art. 5, K. Lorenz et al. (Added Monday, May 29, 2000)
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Earlier Additions
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Welcome to the MRS Internet Journal of Nitride Semiconductor Research (MIJ-NSR), a Peer-Reviewed, Archival Journal devoted to the Group III - Nitride semiconductors. The journal's staff is devoted to building the MIJ-NSR into our field's leading scientific journal by maintaining high editorial standards while exploring and utilizing the extraordinary possibilities of Internet.
The MIJ-NSR is designed to take full advantage of the cost-savings possible through the pervasive use of electronic communication and automation. This means that it can be fully supported by page charges and by sponsorships.
The The Materials Research Society is committed to make the journal available without charge to readers in perpetuity. Users who register enjoy additional privileges and services, such as an e-mail newsletter and the ability to contribute to discussions and databases. Registration is free to MRS members.
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