The properties of bilayer graphene films depend on the relative orientation or twist of the two layers. A dramatic effect of this angular dependence is shown above, where two stacked polycrystalline graphene films have a patchwork of colored regions that appear red, blue, or yellow. This ‘stained-glass’ window appearance arises from the emergence of a narrow absorption band due to direct electronic coupling between the layers.
The properties of bilayer graphene films depend on the relative orientation or twist of the two layers. A dramatic effect of this angular dependence is shown above, where two stacked polycrystalline graphene films have a patchwork of colored regions that appear red, blue, or yellow. This ‘stained-glass’ window appearance arises from the emergence of a narrow absorption band due to direct electronic coupling between the layers.
Cathodoluminescence imaging of 4H-SiC exhibiting several different kinds of crystallographic defects
Cathodoluminescence imaging of 4H-SiC exhibiting several different kinds of crystallographic defects

The Physics of Electronic Materials Branch applies diverse experimental and theoretical capabilities to a broad program of basic and applied research on solid-state materials that have potential device or systems applications of interest to the Navy. Investigations of fundamental mechanisms for crystal growth are coupled with research on the physics and chemistry of fundamental processes controlling the electronic and optical properties of semiconductors, nanomaterials, and interfaces. This materials research is coupled closely to electronic/electro-optic device and sensor development performed both in the Physics of Electronic Materials Branch and in other branches within the Electronics Science and Technology Division. The Physics of Electronic Materials Branch is composed of two sections: Novel Materials and Applications and Quantum Phenomena and Modeling.

Sections:

Active areas of research include:

  • 2D and carbon-based nanomaterials
  • Phase-change materials
  • Metamaterials
  • Wide-bandgap semiconductors such as SiC and GaN
  • MBE growth and applications of the InAs/GaSb/AlSb semiconductor family
  • Quantum information science and technology using quantum dots
  • Growth and directed assembly of nanomaterials such as nanowires and nanoclusters
  • Theory of semiconductor nanostructures
  • Surface and interface science

For more information, click on the links for each section or contact the branch head here.