Assembly of Ordered Carbon Shells on Semiconducting Nanomaterials
Brookhaven National Laboratory
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Semiconducting nanowires rarely develop a protective coating in situ, leaving the surface vulnerable to defects and contaminants. By encapsulating them in the growth chamber with a stable compound, not only is the surface protected from environmental contaminants, but deleterious surface electronic states are minimized.
DescriptionThe invention involves a method for encapsulating semiconductor nanowires with inert carbon shells without modifying the nanowires’ electrical and optical properties, and the resulting structures. Key to the formation of ordered graphite shells is the presence of nanoclusters of metal on the surface of the nanowires. These metal clusters induce local formation of graphitic carbon in well-defined layers. The local carbon nuclei then continue to grow, spreading to uniformly cover the entire nanowire. The process takes place at moderate temperatures, 400?500°C, in the presence of sufficient carbon.
BenefitsThe passivating layer reduces surface states that adversely affect semiconductor performance.
Applications and IndustriesThis process can be applied to any semiconducting nanostructure deposited in vacuum. The resulting passivated nanostructures can be used in electronic, optical, and mechanical devices.
More InformationSutter, E., et al., “Assembly of ordered carbon shells on GaN nanowires,” Appl. Phys. Lett., 90, 093118 (2007) DOI:10.1063/1.2710189
Patents and Patent Applications
ID Number |
Title and Abstract | Primary Lab |
Date |
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Patent 7,714,317 |
Assembly of ordered carbon shells on semiconducting nanomaterials
In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described. |
Brookhaven National Laboratory | 05/11/2010
Issued |
Technology ID | Development Stage | Availability | Published | Last Updated |
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BSA 07-37 | Prototype | Available | 04/22/2011 | 04/22/2011 |