Defect-Driven Magnetism in Mn-doped GaN
DECEMBER 12, 2005
Semiconductors doped with magnetic elements are candidates as room-temperature magnetic semiconductors with potential use as new low-power-consumption electronics, non-volatile memories, and field-configurable logic devices. Research at the U.S. Department of Energy’s Advanced Photon Source is producing new and important information about Mn-doped GaN.