Certain commercial equipment, and software, are identified in this documentation to describe the subject adequately. Such identification does not imply recommendation or endorsement by the NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose. |
Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter
under variable temperatures. Applications:
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Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch Si, SiO2 and SiN,x on planar substrates up to
200mm in diameter under variable temperatures. Applications:
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A tool for etching deep Si-trench by "Bosch" process on planar substrates up to 150mm in diameter.
Demonsrated Use: Bosch deep Si etch, MEMS, Nanopositioners, Cantilevers, Thermal conductors |
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A system based on Argon and Fluorine gases to etch metal and dielectric materials on planar substrates up to 200mm in diameter.
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A system based on Oxygen and Fluorine gases to etch polymer and dielectric materials on planar substrates up to 200mm in diameter.
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Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150mm in diameter.
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This system uses Xenon difluoride vapor to etch silicon. Applications:
Restrictions:
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A tool using microwave oxygen plasma to remove organics on the surfaces
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This system makes use of a broad ion beam to controllably and uniformly remove material from a wafer or wafer piece. It offers standard (IBE) and reactive (RIBE) ion beam etching capabilities. Features:
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Online: February 2006
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