NIST CNST NanoFab Equipment
Lithography

Certain commercial equipment, and software, are identified in this documentation to describe the subject adequately. Such identification does not imply recommendation or endorsement by the NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.

• Resolution: < 4 nm
• Linewidth: <10 nm
• Stitching and overlay accuracy: ≤15 nm (mean + 3 sigma)
• 100 keV
• 50 MHz, 20 bits for high throughput and pattern accuracy
• Pieceparts to 150 mm wafers ( with 300 mm capability)
• 7-inch mask capability
• 10-wafer air-lock capacity

• Nano-lithography
• Patterning resist coated substrates from small irregular-sized chip pieces to 200 mm wafers.

• 25, 50, 100 kV accelerating voltage
• 2 nm minimum spot size
• 12 MHz scanning rate
• 19 bit DAC resolution
• 0.5 mm max write field (4^th lens)
• 150 x 190 mm write area
• 0.62 nm stage movement precision
• < 25 nm stitching & overlay accuracy

• 1x1 to 6x6 inch square masks
• 50 to 200mm wafer diameter
• Structures down to 0.6um
• Address grid down to 25nm
• Top and back-side alignment
• Auto-focus write heads
• Exchangeable write heads
• Accepts DXF, GDS-II, CIF, Gerber, STL formats

• Micron- and sub-micron lithography
• Patterning photomask blanks as well as direct patterning of substrates up to 150 mm in diameter

This tool creates a pattern in a thin resist by embossing from a mold. The pattern is later transferred to the wafer by reactive ion etching.

• Pieceparts up to 150 mm wafers
• Nitrogen cushion pressure ensures uniformity
• Imprint temperature from room to 300 °C
• Heating rate >5 °C/s
• Cooling rate >2 °C/s
• Capable of UV-curable as well as thermoplastic resists
• High throughput: capable of <60 s per wafer
• Feature size down to 10 nm

• Nanoscale patterning
• Polymer or Sol-gel nano device fabrication
• Polymer property study

• Vapor chemical coating
• N₂ gas purge
• UV Ozone clean

• Nanoimprint mold treatment
• Surface wetting control
• Surface lubrication
• Device packaging (moisture barrier)

This system utilizes 1X contact lithography to transfer photomask patterns onto substrates.

• UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available. Contact super-user for installing I-line or G-line filters.
• Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
• Mask size: 2.5"x 2.5", 4"x 4", 5"x 5" and 7"x 7"
• Wafer size for Top-Side Alignment: up to 6" in diameter (small samples, 2",3",4" and 6").
• Wafer size for Bottom-Side Alignment: 3", 4", and 6" chucks
• Maximum wafer thickness: 3 mm

• The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in Semiconductor and Microsystems Technology.
• Top and bottom side alignment to existing pattern
• Bond Alignment for Suss Microtec SB6e

This system utilizes 1X contact lithography to transfer photomask patterns onto substrates.

• UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available. Contact super-user for installing I-line or G-line filters.
• Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
• Mask size: 2.5"x 2.5", 4"x 4", 5"x 5" and 7"x 7"
• Wafer size for Top-Side Alignment: up to 6" in diameter (small samples, 2",3",4" and 6").
• Wafer size for Bottom-Side Alignment: 3", 4", and 6" chucks
• Maximum wafer thickness: 3 mm

• The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in Semiconductor and Microsystems Technology.
• Top and bottom side alignment to existing pattern
• Bond Alignment for Suss Microtec SB6e

This system is used to produce uniform photoresist coatings to be used in photolithography.

• Manual dispense of photoresist
• Wafer size up to 6"
• 6000 RPM maximum speed
• Additional wafer chuck can accommodate small samples
• Hot plate – 300 °C maximum temperature
• Three bake methods: proximity, soft contact and hard contact
• Temperature resolution: 0.1 °C
• Temperature uniformity: 0.3% across working surface
• Stores up to 10 user programs

• Manual dispense for photoresist coatings
• Used mostly for standard photoresists but also acid-resistant

This projection stepper utilizes 5X reduction lithography to transfer photomask patterns onto substrates.

• Fully automated step and repeat exposure (stepper). Throughput ≥ 84 wph.
• Resolution: Sub- half micron.
• The number and placement of the dies are programmable.
• Sample sizes: Handle variable sample sizes up to 200mm (8") wafer
• Max field size (die size on wafers): 22 x 27.4 mm
"
• Reticle sizes: 6" x 6" quartz mask at thickness 0.25", 0.15" and 0.12".
• Numerical Aperture: 0.48 - 0.6

• Device and pattern shrinkage: Provide 5:1 reduction of mask pattern with a variable field size.
• Multiple patterns in selected locations in one wafer with different exposure condition
• Batch process