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MOCVD OF HTSC: PROCESS DEVELOPMENT FOR UNIFORM LARGE AREA GROWTH

Award Information

Agency:
Department of Defense 		Branch:
Army 		Award ID:
15766 		Program Year/Program:
1992 / SBIR
Agency Tracking Number:
15766 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Advanced Technologies/Laboratories Intl
Advanced Technologies/Lab Intl 20010 Century Blvd, Ste 500 Germantown, MD 20874 0111
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Woman-Owned: Yes
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1992
Title: MOCVD OF HTSC: PROCESS DEVELOPMENT FOR UNIFORM LARGE AREA GROWTH
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $500,000.00
 

Abstract:

SEVERAL METHODS, INCLUDING SPUTTERING, E-BEAM EVAPORATION, LASER ABLATION AND METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD), HAVE SUCCEEDED IN DEPOSITING HIGH QUALITY THIN FILMS OF HIGH TEMPERATURE SUPERCONDUCTORS (HTSC) ON 1 CM2 SUBSTRATES. HOWEVER, THE GROWTH OF HIGH QUALITY THIN FILMS OVER LARGE AREAS HAS YET TO BE ACHIEVED AND PROCESS REPRODUCIBILITY IS MARGINAL. THESE TWO SHORTCOMINGS ARE THE MAJOR REMAINING BARRIERS TO THE COMMERCIAL PRODUCTION OF PASSIVE HTSC COMPONENTS. BASED ON WORK DONE IN THE GROWTH OF COMPOUNT SEMICONDUCTORS, MOCVD HAS EMERGED AS THE PREEMINENT DEPOSITION METHOD FOR THE GROWTH OF UNIFORM FILMS OVER LARGE AREAS. THE MOST UNIFORM FILMS GROWN BY MOCVD HAVE BEEN DEPOSITED UNDER STAGNATION POINT FLOW. ATM IS CURRENTLY GROWING STATE-OF-THE-ART TLBACACUO THIN FILMS BY MOCVD IN A STAGNATION POINT FLOW REACTOR WHICH IS CAPABLE OF HANDLING 3 INCH DIAMETER SUBSTRATES. THE GOAL OF PHASE I IS TO USE A COMBINED MODELING/EMPIRAL APPROACH TO DEVELOP CVD HARDWARE AND OPERATING CONDITIONS WHICH GIVE UNIFORM BA(2)CACU(2)O(X) FILMS. IN PHASE II, THE CONCERTED APPROACH WILL BE EXTENDED TO THE CVD OF TL(2)CA(2)CACU(2)O(X) WITH A TARGETED THICKNESS AND COMPOSITIONAL UNIFORMITY MILESTONE OF LESS THAN + OR - 5% OVER 3 INCH DIAMETER SUBSTRATES. A SECONDARY OBJECTIVE IS THAT UNIFORM GROWTH TAKE PLACE UNDER CONDITIONS WHICH ARE HIGHLY TOLERANT OF SMALL FLUCTUATIONS IN THE PROCESS PARAMETERS TO ENSURE A LEVEL OF PROCESS REPRODUCIBILITY TYPICAL OF THE ELECTRONICS INDUSTRY.

Principal Investigator:

Dr Peter S Kirlin
Principal Investigator
2033552681

Business Contact:

Small Business Information at Submission:

Advanced Technology Materials
520-b Danbury Rd New Milford, CT 06776

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No