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Year:1992
Company Ownership:Minority Owned
Company: Accsys Technology, Inc. Agency/Program/Year/Phase: DOE / SBIR / 1992 / 2
Abstract: THE DEVELOPMENT OF SUPERCONDUCTING RADIO FREQUENCY (RF) ACCELERATOR STRUCTURES HAS PRIMARILY FOCUSSED ON HIGH ENERGYELECTRON ACCELERATORS AND HEAVY ION BOOSTERS FOR ELECTROSTATIC ACCELERATORS. HOWEVER, SEVERAL GROUPS HAVE SUGGESTED THAT THIS TECHNOLOGY MIGHT BE USED TO ACHIEVE A CONTINUOUSLY… more
Company: ACT Research Corporation Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: We live in a three dimensional world, where we can go around an object and observe it from all angles. The current displays: TVs, movie screens, and computer monitors are all two dimensional devices. These displays give us only "flattened" realities. The missing third dimension carries with it… more
Company: Eskay Assoc. Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: THERMOPLASTIC ELASTOMER (TPE) BY INJECTION MODLING OFFERS AN ALTERNATE METHOD FOR FORMING CHEMICAL PROTECTIVE GLOVES A SOCMPARED TO THE CONVENTONAL DIP PROCESS USING BUYTL RUBBER SOLUTIONS. THE ADVENT OF VARIOUS TPES WITH OLEFINIC, STYRENIC, URETHANE, ENGINEERING RESINS AND ALLOYS AND BLENDS OFFER… more
Company: ADTECH SYSTEMS RESEARCH, INC. Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: N/A
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 2
Abstract: THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 2
Abstract: IMPROVING THE OXIDATION RESISTANCE OF CARBON-CARBON COMPOSITES IS KEY TO EXPANDING THE USE OF THIS MATERIAL SYSTEM INTO HIGHER TEMPERATURE APPLICATIONS. WHILE BORON PARTICLES HAVE BEEN ADDED TO THESE MATERIALS TO SEAL CRACKS IN PROTECTIVE COATINGS, OXIDATION OF THE CARBON MATRIX NEIGHBORING THE… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOE / SBIR / 1992 / 2
Abstract: ELECTRON BOMBARDED SEMICONDUCTOR (EBS) GAIN DEVICES USING SILICON DIODES HAVE APPLICATIONS IN FREQUENCY AGILE, RADIO FREQUENCY (RF)/MICROWAVE POWER AMPLIFIERS, PHOTOMULTIPLIERS,IMAGING TUBES, AND HIGH SPEED SIGNAL PROCESSORS SUCH AS ANALOG-TO-DIGITAL CONVERTERS. HOWEVER, COMMERCIAL ACCEPTANCE OF… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 2
Abstract: SEVERAL METHODS, INCLUDING SPUTTERING, E-BEAM EVAPORATION, LASER ABLATION AND METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD), HAVE SUCCEEDED IN DEPOSITING HIGH QUALITY THIN FILMS OF HIGH TEMPERATURE SUPERCONDUCTORS (HTSC) ON 1 CM2 SUBSTRATES. HOWEVER, THE GROWTH OF HIGH QUALITY THIN FILMS OVER LARGE… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 2
Abstract: SEMICONDUCTOR DEVICES THAT PROVIDE RELIABLE HIGH POWER OR OPERATE AT EXTREMELY HIGH FREQUENCY IN HARSH ENVIRONMENTS SUCH AS SUSTAINED HIGH RADIATION LEVELS ARE REQUIRED FOR ASAT APPLICATIONS. THIS NEED FOR DEVICES THAT CAN OPERATE AT INCREASED TEMPERATURES OR WITH MINIMUM RADIATIVE COOLING HAS BEEN… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 2
Abstract: EXPLOITATION IN MICROELECTRONICS OF THE VERY HIGH DIELECTRIC CONSTANTS OF FERROELECTRIC PEROVSKITES SUCH AS BATIO3 AND PZT HAS BEEN LIMITED BY MATERIALS PROCESSING AND COMPATIABILITY PROBLEMS. HIGH QUALITY FERROELECTRIC THIN FILMS HAVE NOT BEEN GROWN AT TEMPERATURES COMPATIABLE WITH STANDARD SI OR… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: NSF / SBIR / 1992 / 1
Abstract: ZINC SELENIDE (ZNSE) HAS IMPORTANT POTENTIAL APPLICATIONS ASA MATERIAL FOR VISIBLE LIGHT EMITTING DEVICES AND SHORT WAVELENGTH LASERS FOR DISPLAY APPLICATIONS. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) OF ZNSE IS THE MOST PROMISING PRODUCTION METHOD BUT IS HAMPERED BY ITS USE OF HYDROGEN… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: NSF / SBIR / 1992 / 1
Abstract: IN THE NEXT DECADE INDIUM PHOSPHIDE BASED LASERS ARE EXPECTED TO BE CRITICALLY IMPORTANT IN INTEGRATED ELECTROOPTIC DEVICES AND FIBER OPTICS COMMUNICATION DUE TO THEIR HIGH SPEED AND BANDGAP IN THE NEAR INFRARED SPECTRAL REGION. SEMI-INSULATING TITANIUM DOPED INDIUM PHOSPHIDE IS REQUIRED FOR… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: SINGLE CRYSTAL BATIO3 HAS ELECTRO-OPTIC AND PHOTOREFRACTIVE PROPERTIES THAT ARE AMONG THE MOST DESIRABLE OF ALL INORGANIC MEDIA. THE MATERIAL ALSO POSSESSES FERROELECTRIC PROPERTIES AND AN EXCEPTIONALLY HIGH DIELECTRIC CONSTANT, WHICH MAKE BATIO3 FILMS HIGHLY ATTRACTIVE FOR RADIATION HARD AND DRAM… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOC / SBIR / 1992 / 1
Abstract: MCNC PROPOSES A FEASIBILITY STUDY AND EVALUATION OF THREE PROMISING APPROACHES TO THE FABRICATION OF SURFACE TEST STRUCTURES ON SILICON. SURFACE FEATURES ON THE FIRST STRUCTURE WILL BE PRODUCED BY CONTROLLABLY ETCHING THERMALLYGROWN OXIDES. FEATURES ON THE SECOND WILL BE MADE BY ETCHING… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) IS A PROMISING TECHNIQUE FOR PRODUCING ULTRAHIGH PURITY III-V COMPOUND SEMICONDUCTOR. OMVPE CAN PRODUCE COMPLEX LAYERED STRUCTURES WITH THE ABRUPT INTERFACES REQUIRED FOR ADVANCED ELECTRONIC AND PHOTONIC DEVICES. UNFORTUNATELY, OMVPE CURRENTLY REQUIRES… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) HAS BECOME A SUCCESSFUL THIN FILM GROWTH TECHNIQUE DUE TO ITS INHERENT CONTROL OVER FILM COMPOSITION, PURITY, UNIFORMITY AND DEPOSITION RATE. THIN FILM TECHNOLOGY FOR FERROELECTRIC MATERIALS SUCH AS LEAD TITANATE AND PZT IS IN GREAT DEMAND DUE TO MANY… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOE / SBIR / 1992 / 1
Abstract: DNA AND BIOSEQUENCES ARE BEING DETERMINED FASTER THAN THEY CAN BE COMPARED AND ANALYZED. PRESENT TECHNIQUES FOR RIGOROUSLY SEARCHING A LARGE DATABASE ARE COSTLY AND TIME CONSUMING. UNDER ALL PLAUSIBLE GROWTH PROJECTIONS, THE PROBLEM WILL SOON BECOME OVERWHELMING. A CUSTOM, VERY LARGE SCALE… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOE / SBIR / 1992 / 1
Abstract: DIAMOND AND COPPER ARE UNIQUE IN THEIR ABILITY TO EFFICIENTLY CONDUCT HEAT, MAKING THEM PREMIER MATERIALS FOR ELECTRONIC APPLICATIONS FOR WHICH HEAT REMOVAL IS CRITICAL TO SYSTEM PERFORMANCE. DIFFERENCES IN THEIR OTHER PROPERTIES MAKE IT ATTRACTIVE TO COMBINE THESE TWO MATERIALS INTO A… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: Many key steps in semiconductor "chip" manufacture utilize gases to form thin films which are critical to both device performance and cost. Over $2 billion worth of equipment, materials and peripherals are now sold annually to the semiconductor manufacturers who use gas phase processing. As… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: High temperature superconducting (HTSC) materials offer the potential for major cost and performance advantages in advanced high frequency communications and radar sytems. Key to the use of these materials in subsystems is the fabrication of components, especially low loss switches, which can… more
Company: Advanced Technologies/Laboratories Intl Agency/Program/Year/Phase: DOD / SBIR / 1992 / 1
Abstract: The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric… more
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