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This system enables direct writing of advanced nanolithography patterns on wafers or masks
- Resolution: < 4 nm
- Linewidth: <10 nm
- Stitching and overlay accuracy: ≤15 nm (mean + 3 sigma)
- 100 keV
- 50 MHz, 20 bits for high throughput and pattern accuracy
- Pieceparts to 150 mm wafers ( with 300 mm capability)
- 7-inch mask capability
- 10-wafer air-lock capacity
Applications:
- Nano-lithography
- Patterning resist coated substrates from small irregular-sized chip pieces to 200 mm wafers.
Demonstrated use: Nanoscale contacts, sub-20 nm gratings and contacts, mix-and-match exposures.
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This system enables direct writing of advanced nanolithography patterns on wafers
- 25, 50, 100 kV accelerating voltage
- 2 nm minimum spot size
- 12 MHz scanning rate
- 19 bit DAC resolution
- 0.5 mm max write field (4th lens)
- 150 x 190 mm write area
- 0.62 nm stage movement precision
- < 25 nm stitching & overlay accuracy
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High resolution pattern generator for low volume mask making and direct writing
- 1x1 to 6x6 inch square masks
- 50 to 200mm wafer diameter
- Structures down to 0.6um
- Address grid down to 25nm
- Top and back-side alignment
- Auto-focus write heads
- Exchangeable write heads
- Accepts DXF, GDS-II, CIF, Gerber, STL formats
Applications:
- Micron- and sub-micron lithography
- Patterning photomask blanks as well as direct patterning of substrates up to 150 mm in diameter
Example use: In-house photomask design and prototyping.
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This tool creates a pattern in a thin resist by embossing from a mold. The pattern is later transferred
to the wafer by reactive ion etching.
- Pieceparts up to 150 mm wafers
- Nitrogen cushion pressure ensures uniformity
- Imprint temperature from room to 300 °C
- Heating rate >5 °C/s
- Cooling rate >2 °C/s
- Capable of UV-curable as well as thermoplastic resists
- High throughput: capable of <60 s per wafer
- Feature size down to 10 nm
Applications:
- Nanoscale patterning
- Polymer or Sol-gel nano device fabrication
- Polymer property study
Demonstrated Use:
Nano-Magnetic media; Bio-Nanomatrix; Polymer nanostructure property; Surface film transfer
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Integrated UV-Ozone Cleaner / Molecular Vapor Coater |
A tool to coat per-fluorinated hydrophobic self-assembled monolayer
on mold or other material surfaces in vapors
- Vapor chemical coating
- N2 gas purge
- UV Ozone clean
Applications:
- Nanoimprint mold treatment
- Surface wetting control
- Surface lubrication
- Device packaging (moisture barrier)
Demonstrated Use:
Nanoimprint mold release layer coating; Photo-mask anti-stick layer coating; Surface clean; Surface chemical modification
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This system utilizes 1X contact lithography to transfer photomask patterns onto substrates.
- UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available.
Contact super-user for installing I-line or G-line filters.
- Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
- Mask size: 2.5"x 2.5", 4"x 4", 5"x 5" and 7"x 7"
- Wafer size for Top-Side Alignment: up to 6" in diameter (small samples, 2",3",4" and 6").
- Wafer size for Bottom-Side Alignment: 3", 4", and 6" chucks
- Maximum wafer thickness: 3 mm
Applications:
- The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in Semiconductor and
Microsystems Technology.
- Top and bottom side alignment to existing pattern
- Bond Alignment for Suss Microtec SB6e
Demonstrated use: Optical photoresist patterning for etching masks, metal lift-off, cured films for permanent applications
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This system utilizes 1X contact lithography to transfer photomask patterns onto substrates.
- UV broadband (350 nm to 450 nm), I-line (365 nm) and G-line (436 nm) wavelength available.
Contact super-user for installing I-line or G-line filters.
- Exposure methods: flood, proximity, soft and hard contacts, low vacuum and vacuum contacts.
- Mask size: 2.5"x 2.5", 4"x 4", 5"x 5" and 7"x 7"
- Wafer size for Top-Side Alignment: up to 6" in diameter (small samples, 2",3",4" and 6").
- Wafer size for Bottom-Side Alignment: 3", 4", and 6" chucks
- Maximum wafer thickness: 3 mm
Applications:
- The machine is exclusively intended for use as an alignment and/or exposure device for substrates used in Semiconductor and
Microsystems Technology.
- Top and bottom side alignment to existing pattern
- Bond Alignment for Suss Microtec SB6e
Demonstrated use: Optical photoresist patterning for etching masks, metal lift-off, cured films for permanent applications
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This system is used to produce uniform photoresist coatings to be used in photolithography.
- Manual dispense of photoresist
- Wafer size up to 6"
- 6000 RPM maximum speed
- Additional wafer chuck can accommodate small samples
- Hot plate – 300 °C maximum temperature
- Three bake methods: proximity, soft contact and hard contact
- Temperature resolution: 0.1 °C
- Temperature uniformity: 0.3% across working surface
- Stores up to 10 user programs
Applications:
- Manual dispense for photoresist coatings
- Used mostly for standard photoresists but also acid-resistant
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This projection stepper utilizes 5X reduction lithography to transfer photomask patterns onto substrates.
- Fully automated step and repeat exposure (stepper). Throughput ≥ 84 wph.
- Resolution: Sub- half micron.
- The number and placement of the dies are programmable.
- Sample sizes: Handle variable sample sizes up to 200mm (8") wafer
- Max field size (die size on wafers): 22 x 27.4 mm
"
- Reticle sizes: 6" x 6" quartz mask at thickness 0.25", 0.15" and 0.12".
- Numerical Aperture: 0.48 - 0.6
Applications:
- Device and pattern shrinkage: Provide 5:1 reduction of mask pattern with a variable field size.
- Multiple patterns in selected locations in one wafer with different exposure condition
- Batch process
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The National Institute of Standards and Technology (NIST) is an agency of the U.S. Department of Commerce.