Nanofabrication Facility
Managed by:
Electronic Materials Group (contact: Chuck
Black) and Facility (contact:
Aaron Stein)
The Nanofabrication Facility provides 5,000 square feet of Class 1000
cleanroom space dedicated to state-of-the-art processing of thin-film
materials and devices. Core laboratory capabilities include high-resolution
patterning by electron-beam lithography, nanoimprint, and photolithography.
Our Facility supports thin-film material deposition by electron-beam
evaporation, DC magnetron sputtering, and plasma-enhanced chemical vapor
deposition. We also provide reactive ion etch processes and MEMS-type deep
silicon etch capabilities. The laboratory contains a dual-beam focused-ion
beam system capable of high-resolution imaging and including an Oxford EDX
detector, ion-mill, and electron- and ion-induced metal deposition.
Our facility capabilities extend beyond nanofabrication to high-precision
electrical characterization. This second laboratory provides multiple
systems for extensive device testing at variable temperatures, in magnetic
fields, and under optical illumination.
CFN Users have full access to our state-of-the-art toolset for carrying
out their proposed research projects. The Nanofabrication Facility staff has
extensive experience in thin-film device fabrication and electrical
characterization, and is readily available for training and to collaborate
on new process development.
Equipment Status
and Related Documentation
Capabilities
Lithography
The Nanofabrication Facility features lithography by electron-beam,
ultraviolet light, and nanoimprint methods providing the capability to
pattern from 10’s of nanometers up to 100’s of microns over large sample
areas.
-
Electron Beam
Lithography
Contact: Aaron Stein
JEOL JBX-6300FS, NPGS system Electron beam lithography at 100, 50, 25 keV
(JEOL) and 30 keV (Helios w/ NPGS) is available with patterning of feature
sizes as small as 8 nm. The JEOL 6300FS provides capability for high-speed,
large area exposures (1mm+) and sub-20 nm overlay and stitching accuracy.
- Optical Lithography
Contact: Don Elliott
Karl Suss MJB-3 UV Mask Aligner: UV exposure of resist at 365-400nm
wavelengths. Substrate sizes range from small chips to 3-inch diameter
wafers. Pattern resolution as small as 1um using four-inch square masks.
This tool will be replaced with a
Karl
Suss MA6 mask aligner by October, 2010.
- Nanoimprint Lithography
Contact: Aaron Stein
Molecular Imprints Imprio 55 Uses step-and-flash imprint technology to
replicate patterned quartz masters with UV curing. Step-and-repeat
functionality allows for large area (~mm^2) patterning of 20 nm features.
Sub-micron alignment available.
- Dual Scanning Electron
Microscope (SEM) / Focused Ion Beam (FIB) system
Contacts: Fernando Camino, Aaron Stein
A Helios Nanolab (FEI Company) dual-beam system capable of simultaneous
focused ion beam milling and SEM imaging. NPGS nanolithography system can be
used to pattern with either electrons or ions. Further capabilities are: gas
injector for electron or ion beam assisted deposition of platinum and TEOS
(dielectric), x-ray detector for EDS analysis, nano-manipulator probe, high
resolution SEM (1 nm), FIB (5 nm), and STEM (0.8 nm) imaging, and in-situ
sample electrical characterization.
Thin-Film Deposition and Etch
Reactive Ion Etch
Contact: Ming Lu
An Oxford Instruments Plasmalab 100 uses an inductively coupled plasma
(ICP) source for the high-speed, anisotropic plasma etching of silicon,
polymers and dielectric materials. The system has demonstrated capability to
etch vertical walls in silicon to a depth of 300 um at etch rates of 3 um /
min with an aspect ratio (width of feature to etch depth) of 50:1. A
new system of the same model will be installed by October 2010, which is
designed especially for etching metal and compound semiconductor materials.
Both ICP etchers have endpoint detection capability.
A Trion Phantom III Reactive Ion Etcher is a general purpose fluorine
based plasma etch tool for etching thin films generally 1 um or less in
thickness that have been deposited on silicon or other wafers up to 6” in
diameter. Many processes for etching thin layers of photoresist, metal,
semiconductors, or insulators are available.
Plasma Enhanced
Chemical Vapor Deposition
Contact: Don
Elliott
The Trion Orion III PECVD system is an inductively coupled plasma (ICP)
deposition tool used for the deposition of thin films on silicon wafers and
other substrates up to 6” in diameter. Current processes in use include the
deposition of SiO2, Si3N4, and SiOxNy films.
Physical Vapor
Deposition
Contact: Don Elliott
Two individual Kurt J. Lesker PVD 75 vacuum deposition systems are
available for thin film sputter and electron beam deposition of a wide
variety of materials. The sputter deposition system contains has 3 targets
for magnetron sputtering, shutter, rotational holder, and substrate heater.
The e-beam system uses a 4- pocket electron beam deposition source with
automatic crucible indexing. A small Denton evaporator is available for
rapid-turn around deposition of metals.
Electrical
Characterization
Contact: Fernando Camino
The electrical characterization lab
hosts these major instruments:
-
LakeShore Model
8404 Hall Effect Measurement System allows measurement of
mobilities down to 0.001 cm2/Vs and resistances
from 0.5 mW
to 100 GW.
Samples can be measured at room temperature and at 77 K.
-
LakeShore HFTTP4
cryogenic probe station is designed for low-noise, DC to 50
MHz, measurements from 4 K up to 400 K under in-plane
magnetic fields up to 1 Tesla. Optical sources can be
introduced through a viewport window or a fiber optic probe
arm.
-
Signatone CM-170
probe station is perfect for routine electrical
characterization at room temperature. It is reliable and
simple to use.
-
Rucker and Kolls
probe station is suited for studying optoelectronic
properties at room temperature. It is fitted with a with a
Newport-Oriel solar spectrum simulator and optical
monochromator.
-
MMR's Variable
Temperature Micro Probe System allows opto-electrical
characterization of samples in the temperature range from
70K to 730K under controlled atmosphere (inert, vacuum etc.)
and light condition.
-
MBE-Komponenten
AO500 high-temperature probe station for rapid thermal
annealing (up to 500 °C) in vacuum (2 mbar) or in a gas
mixture atmosphere (Ar, H2 and N2
regulated by mass flow controllers). The system also allows
optical access to the sample and in-situ electrical
characterization.
-
Kulicke & Soffa
Model 4526 wire wedge bonder.
Last Modified: February 29, 2012 Please forward all questions about this site to:
Pam Ciufo.
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