PROJECT TITLE: Non-Volatile Thin-film Semiconductor Mass Memory
TECHNICAL ABSTRACT (LIMIT 200 WORDS)
This program will further develop a new, proprietary, radiation-hard, low-power, high-density, non-volatile semiconductor memory technology with the potential to address NASA program needs for space qualifiable mass memory. The devices are based on thin-film structural phase-change memory materials, related to those currently used in rewriteble optical disks. Prototype devices have already demonstrated extended programming endurance (in excess of 1013 cycles), low voltage operation ( < 3 V), and high programming speed (less than 50 nsec). Research proposed for Phase I will investigate the scaling of programming energy with device size and demonstrate operational test structures suitable for integration into memory arrays using 0.18 micrometer photolithography.
POTENTIAL COMMERCIAL APPLICATIONS
The new thin-film non-volatile memory technology can form the basis for a range of low-cost, high-density mass storage devices, initially replacing FLASH EEPROM, and eventually, possibly also replacing DRAM and SRAM type memories. Their fundamentally robust, radiation-hard characteristics will allow them to address critical aerospace and military needs as well as a range of portable consumer electronics applications.
NAME AND ADDRESS OF PRINCIPAL INVESTIGATOR
Wolodymyr (Wally) Czubatyj
Energy Conversion Devices
1675 W. Maple Rd.
Troy , MI 48084
NAME AND ADDRESS OF OFFEROR
Energy Conversion Devices
1675 W. Maple Rd.
Troy , MI 48084