NASA 1996 SBIR Phase I

PROJECT TITLE : New Materials for High Performance IR Sensors Operating Entire IR Spectrum

TECHNICAL ABSTRACT (LIMIT 200 WORDS)

Theoretical studies have shown that a new class of Tl based III-V semiconductor alloys bear a great potential to become the next generation of prime infrared (IR) detector and focal-plan-arrays(FPAs) materials. Japanese researchers have recently announced their first success in growing one of these alloys lattice matched to InP. Being able to grow IR materials directly on InP or GaAs substrates offers the prospect of integrated laser emitters, detectors, and read-out circuit on the same chip. We propose to use our molecular bean epitaxial (MBE) machine with a special cracking facility to grow several of these new alloys lattice matched to InP substrate and establish the IR absorption edges in the first phase. If this is successful, we will then optimize the quality of the materials and develop prototype discrete IR detectors in the second phase. These materials are expected to have superior material properties(compared to HgCdTe) in terms of mechanical strength, thermal and structural stability, and composition uniformity. Because of novelty of these materials, we proposed a combined experimental and theory effort to enhance our chance of success in this project.

The uniqueness of the proposed approach, and the superior properties will make IR sensors based on these type of materials the prime candidates for numerous applications, ranging from space surveillance, medical imaging, gas detection for pollution monitoring, spectroscopy, Lidar remote sensing, night vision, security alarm system, etc.

Dr. Jie Piao
Epitaxial Laboratory, Inc.
25 East Loop Road
Stony Brook, NY 11790-3350

Epitaxial Laboratory, Inc.
25 East Loop Road
Stony Brook, NY 11790-3350