NASA 1996 SBIR Phase I

PROJECT TITLE : Low-Noise Cryogenic Germanium Field-Effect Transistor

TECHNICAL ABSTRACT (LIMIT 200 WORDS)

critical sensors that must operate at "deep" cryogenic temperatures (liquid-helium and sub-Kelvin ranges). These sensors include infrared and X-ray detectors for astronomy and cosmology and visible-range photodetectors for precision spacecraft pointing. Present cryogenic readout technology requires compromises and is expected to become the limiting factor in scientific return from future NASA observational and experimental missions. In Phase I we propose to design, fabricate and evaluate prototype cryogenic Ge JFETs to demonstrate feasibility and establish a technology base for Ge-based cryogenic electronics for future NASA missions and other needs.

The proposed Ge-based cryogenic transistor is expected to become an additional product line for Germanium Power Devices. Both discrete and integrated devices would be offered, either as standard designs or on a custom-designed foundry basis to meet the readout requirements for particular sensors. These low-noise transistors capable of operating in the deep cryogenic temperature range would be unique, and thus the technology of choice for high-performance cryogenic sensor readout for NASA projects and other applications. In addition, the technology developed in making a cryogenic JFET will be relevant to the integration of transistors with Ge-based photodetectors. Integrated amplifier/detector products would be a valuable addition to the Germanium Power Devices line of near-IR detection products for the rapidly-growing field of fiberoptic communications.

Rufus R. Ward,
Germanium Power Devices Corp.,
Box 3065 SVS, Andover, MA 01810

Germanium Power Devices Corp.