Project Title:

High-Q Coatings on GaAs for Microwave and Millimeter Wave Applications

Neocera, Inc.
335 Paint Branch Drive
College Park, MD 20742

93-1  14.04   9937    ____  AMOUNT REQUESTED $69,999.40

High-Q Coatings on GaAs for Microwave and Millimeter Wave Applications

Abstract:

Monolithic circuits have steadily advanced over the past decade
making it possible now to fabricate high performance miniature
subsystems in the microwave and millimeter wave range. The major
drawback of these circuits to date is the lack of high-Q
components. High dielectric-constant, low-loss layers show great
promise to overcome this limitation. Such moderately thick layers
when patterned and integrated into the GaAs substrate structure of
MMIC devices could perform a number of important high-Q functions
such as filters, matching transformers, delay lines, resonators for
low phase noise oscillators, etc.
Phase I of this SBIR has the goal to demonstrate the basic
feasibility of depositing a high-Q material on GaAs, patterning it
and forming a miniature low loss transmission line compatible with
standard MMIC device processes. A study of possible microwave and
millimeter wave applications of this technology will also be
performed that will provide the basis for future deposition and
process refinements and the development of miniature high-Q
components during a subsequent Phase II effort.
The successful development of a high dielectric constant material
deposition and patterning technology will permit the integration of
miniature high-Q components directly into GaAs wafers and thus
greatly extend the capability of today's monolithic circuits. This
technology is expected to show major benefits for mmW spaceborne
communications applications where weight, size and performance are
of primary importance. (See also the letter of interest for this
technology supplied by Raytheon).

Dielectric layers, Miniaturization, High-Q components, Monolithic
circuits