Project Title:
Dielectric Isolation for Silicon Carbide
92-1-09.07-1100B NAS05-32403
Dielectric Isolation for Silicon Carbide
Advanced Technology Materials, Inc.
7 Commerce Drive
Danbury, CT 06810
Charles P. Beetz, Jr. (203-794-1100)
Abstract:
This project addresses the need for semiconductor devices
capable of withstanding long-time exposures in harsh environments
to high radiation levels and elevated temperatures. An isolation
technology for SiC will be developed that is similar to the SIMOX
process developed for silicon, which permits fabrication of ex-
tremely radiation resistant, nonvolatile memory devices. The next
generation of high-performance, radiation-tolerant electronic
device technology will be based on wide bandgap semiconductor
materials such as SiC, GaN, and diamond. Of these, silicon carbide
is the most promising material for near-term applications. This
isolation technique is based on a novel co-implantation and rapid
thermal annealing process that will enable the formation of a thin
SiC layer, electrically isolated for the bulk wafer that can be
used for epitaxial film growth and device fabrication. This method
of device isolation has many advantages for reducing leakage
currents, increasing data storage times, reducing power consump-
tion, and lowering costs by simplifying device design and
fabrication. In Phase II, the barrier implantation and surface
recrystallization processes will be optimized, and simple
nonvolatile charge storage devices will be fabricated on prototype
substrates. Long-term feasibility will be assessed, and a simple,
nonvolatile memory device prototype will be fabricated.
Potential Commercial Application:
Potential Commercial Applications: Applications of this
technology will include in-situ sensors for radiation-intense
environments and on-board control circuitry for aircraft engine
control, power electronics for the space station, instrumentation
for nuclear power systems, and tactical air-launched missile
systems.
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