Project Title:

High-Power, Single-Mode Diode Lasers for 2 to 5 æm

92-1-08.18-0610                                                    NAS07-1208
High-Power, Single-Mode Diode Lasers for 2 to 5 æm
Sensors Unlimited, Inc.
3490 U.S. Route 1
Princeton, NJ  08540
Gregory H. Olsen                                     (609-520-0610)

Abstract:

     GaInAsSb diode lasers will be fabricated for the 2 - 5 æm
mid-infrared spectrum. This project will develop a method to grow
these materials, both n- and p-type, by metalorganic chemical
vapor deposition (MOCVD). Although MOCVD is the preferred
fabrication method for diode lasers, due to its uniformity and
manufacturing potential, no one to date has been able to grow n-
type AlGaAsSb with more than 15 percent Sb (it always grows p-
type). To accomplish this tasks, a radically new generator of
stibine (SbH3) gas, along with recently developed metalorganic
precursors of Al- and Ga-compounds, will be used. Methyl
precursors of Al, Ga, and Sb are believed responsible for the
carbon incorporation that dopes the alloys p-type. Phase I will
grow both n- and p-type AlGaAsSb and GaInAsSb, from which 3.5 æm
lattice-matched lasers could be grown on GaSb substrates. Phase II
will optimize other alloy compositions and device structures to
make high-power, single-mode lasers for 2 to 5 æm emission at 200 -
 300 K. 

Potential Commercial Application:

Potential Commercial Applications:  The use of MOCVD to produce
AlGaAsSb/InGaAsSb semiconductor lasers would reduce their cost so
that they could supplant lead-salt lasers, which are the only ones
now commercially available for 2 to 5 æm, although they have
reliability problems, low power output, modal instabilities, and
require cryogenic cooling.

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