Project Title:

Silicon-Germanium-Heterostructure, Bipolar Transistors

14.05-0333
911542
Silicon-Germanium-Heterostructure, Bipolar Transistors
Scientific Research Associates, Inc.
P.O. Box 1058
Glastonbury
CT
06033
Harold L.
Grubin
203-659-0333
LeRC
NAS3-26392
284

14.05-0333
911542

Abstract:

Silicon-Germanium-Heterostructure, Bipolar Transistors
This project addresses the design and fabrication of Si-GE heterostructure bipolar
transistors (HBT) for applications in communications. Emphasis will be placed on
low-noise, high-power and high-frequency performance. The innovation here is the
use of an advanced, device-physics-simulation computer code for the design of the
devices. Devices will be fabricated according to the design emerging from the analysis
because it will be more cost-effective and eliminate the trial-error effort normally
employed in fabrication procedures. The numerical simulation procedure has been well
tested in the design of AlGaAs/GaAs HBTs, InGaAs/InP HBTs, HEMTs, and PBTs.
Si-Ge HBTs have significant promises for high-speed circuits. There is a significant
commercial potential for the devices and analysis computer code.
Si-Ge, HBT, computer simulation, low-noise, high-frequency