Project Title:

Monolithic, Integrated, Heterodyne-Receiver Chip

14.03-6000
911998
Monolithic, Integrated, Heterodyne-Receiver Chip
Spire Corporation
One Patriots Park
Bedford
MA
01730-2396
H. Paul
Maruska
617-275-6000
JPL
NAS7-1161
283

14.03-6000
911998

Abstract:

Monolithic, Integrated, Heterodyne-Receiver Chip
A monolithically integrated semiconductor chip containing a tunable diode laser,
channel waveguides, and a tandem set of dual detectors will be developed to function
as the front end for a heterodyne communications receiver for deep space exploration
applications. The material of choice will be GaAs/AlGaAs, to match the wavelength
of the highest power diode laser presently available. The laser will serve as local
oscillator, to be mixed in the two-channel waveguide with the incident optical signal
flux. Phase I will concentrate on the design and implementation of the detector pair
and associated waveguides. The detectors must be connected in series electrically
to take advantage of the available 3 dB increase in signal intensity and cancellation
of excess diode laser noise. An unconventional growth sequence will be followed,
whereby one detector will be positioned above the other; coupling from the lower
to the upper waveguide will be provided by a set of distributed Bragg gratings. The
design of these gratings will allow complete lightwave transfer will be a major concentration
of effort. Phase II will be the design of an advanced tunable laser and the total
integration of the complete structure.
A functional heterodyne receiver chip can find extensive commercial use as the front
end for fiber systems delivering home entertainment to the public.
tandem dual detectors, waveguide coupling, tunable receiver chip