Project Title:

Novel Process for Thin-Film Growth of Yttrium-Barium-Cuprate

04.17-2681
NAS3-25868
Novel Process for Thin-Film Growth of Yttrium-Barium-Cuprate
Advanced Technology Materials, Inc.
	520-B Danbury Road
	New Milford, CT 06776
		Peter S. Kirlin
(203-355-2681)

Abstract:

	Realization of the performance advantages of high-Tc, superconducting devices in
high-frequency communications depends on the development of a low-temperature deposition
process with exacting control of stoichiometry and morphology. Metallo-organic chemical
vapor deposition (MOCVD) can meet these needs; however, recent work by the company
shows that films of YBaCuO and BiSrCaCuO grown by MOCVD at temperatures less than
800oC are amorphous mixtures of oxides, with a cauliflower-like morphology indicative
of low-surface-mobility growth. Surface mobilities can be enhanced through the use
of a plasma. At 600oC, a 50 eV oxygen ion beam oxidized BaF2 to BaO which suggests
that plasma-enhanced chemical vapor deposition (PECVD) will effect growth of superconducting
thin films with the existing reagents at 600oC or below. Phase I will demonstrate
the growth of in-situ superconducting thin films with PECVD. Phase II will focus
on process optimization through the correlation of plasma properties with the high-temperature,
superconducting thin-film characteristics. This will allow a Phase III scale-up of
the PECVD process to multi-wafer production.

Potential Commercial Application:

Potential Commercial Applications: Applications are expected in the fabrication of
passive, high-frequency devices which have the potential to enhance the bandwidth
and range of NASA's next generation of deep-space and satellite communication systems.