Project Title:

Cryogenically-Cooled InSb JFET

08.13-3666
Cryogenically-Cooled InSb JFET
Electro-Optek Corporation
3152 Kashiwa Street
Torrance
CA
90505
William S.
Chan
(213-534-3666)
GSFC

Abstract:

Many microelectronic circuits used in high-performance infrared systems are required
to operate at cryogenic temperatures and be low noise at the same time. For these
applications, this project investigates a new and innovative technology for InSb
junction-field-effect transistor (JFET) devices and circuits. It is based on molecular
beam epitaxy (MBE) of InSb layers on InSb and sapphire substrates. The n- and p-layers
can be made by in-situ doping; thus, the JFET structure can be fabricated readily
by MBE. The resultant InSb JFET devices can be operated at a temperature below 2
K and are capable of extremely low noise (under a nanovolt per Hz1/2), two highly
desirable characteristics for electronics for infrared (IR) sensors in the long wavelength
IR (LWIR) spectral region. The aim of Phase I is to establish the low-temperature
model for InSb JFETs and to define the MBE processes and requirements to fabricate
the multiple layer structure.

Potential Commercial Application:

Potential Commercial Applications:  Applications could arise in low-noise microcircuits
for high-density and high-speed microelectronics.