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Class Numbers & Titles | Class Numbers Only | USPC Index | International | HELP |
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You are viewing a USPC Schedule. |
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Class 148 | METAL TREATMENT |
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![]() | ![]() | 95 | PROCESS OF MODIFYING OR MAINTAINING INTERNAL PHYSICAL STRUCTURE (I.E., MICROSTRUCTURE) OR CHEMICAL PROPERTIES OF METAL, PROCESS OF REACTIVE COATING OF METAL AND PROCESS OF CHEMICAL-HEAT REMOVING (E.G., FLAME-CUTTING, ETC.) OR BURNING OF METAL |
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![]() | ![]() | 22 | COMPOSITIONS |
![]() | ![]() | 33 | BARRIER LAYER STOCK MATERIAL, P-N TYPE |
![]() | ![]() | 33.1 | ![]() |
![]() | ![]() | 33.2 | ![]() |
![]() | ![]() | 33.3 | ![]() |
![]() | ![]() | 33.4 | ![]() |
![]() | ![]() | 33.5 | ![]() |
![]() | ![]() | 400 | STOCK |
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CROSS-REFERENCE ART COLLECTIONS | ||
![]() | ![]() | 900 | ION IMPLANTED |
![]() | ![]() | 901 | SURFACE DEPLETED IN AN ALLOY COMPONENT (E.G., DECARBURIZED) |
![]() | ![]() | 902 | HAVING PORTIONS OF DIFFERING METALLURGICAL PROPERTIES OR CHARACTERISTICS |
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FOREIGN ART COLLECTIONS | ||
FOR000 | CLASS-RELATED FOREIGN DOCUMENTS |
DIGESTS | ||
![]() | ![]() | DIG1 | AMORPHOUS SEMICONDUCTOR |
![]() | ![]() | DIG2 | AMPHOTERIC DOPING |
![]() | ![]() | DIG3 | ANNEAL |
![]() | ![]() | DIG4 | ANNEALING, INCOHERENT LIGHT |
![]() | ![]() | DIG5 | ANTIMONIDES OF GALLIUM OR INDIUM |
![]() | ![]() | DIG6 | APPARATUS |
![]() | ![]() | DIG7 | AUTODOPING |
![]() | ![]() | DIG8 | BI-LEVEL FABRICATION |
![]() | ![]() | DIG9 | BI-MOS |
![]() | ![]() | DIG10 | BIPOLAR TRANSISTORS-ION IMPLANTATION |
![]() | ![]() | DIG11 | BIPOLAR TRANSISTORS |
![]() | ![]() | DIG12 | BONDING E.G., ELECTROSTATIC FOR STRAIN GAUGES |
![]() | ![]() | DIG13 | BREAKDOWN VOLTAGE |
![]() | ![]() | DIG14 | CAPACITOR |
![]() | ![]() | DIG15 | CAPPING LAYER |
![]() | ![]() | DIG16 | CATALYST |
![]() | ![]() | DIG17 | CLEAN SURFACES |
![]() | ![]() | DIG18 | COMPENSATION DOPING |
![]() | ![]() | DIG19 | CONTACTS OF SILICIDES |
![]() | ![]() | DIG20 | CONTACTS, SPECIAL |
![]() | ![]() | DIG21 | CONTINUOUS PROCESS |
![]() | ![]() | DIG22 | CONTROLLED ATMOSPHERE |
![]() | ![]() | DIG23 | DEEP LEVEL DOPANTS |
![]() | ![]() | DIG24 | DEFECT CONTROL-GETTERING AND ANNEALING |
![]() | ![]() | DIG25 | DEPOSITION MULTI-STEP |
![]() | ![]() | DIG26 | DEPOSITION THRU HOLE IN MASK |
![]() | ![]() | DIG27 | DICHLOROSILANE |
![]() | ![]() | DIG28 | DICING |
![]() | ![]() | DIG29 | DIFFERENTIAL CRYSTAL GROWTH RATES |
![]() | ![]() | DIG30 | DIFFUSION |
![]() | ![]() | DIG31 | DIFFUSION AT AN EDGE |
![]() | ![]() | DIG32 | DIFFUSION LENGTH |
![]() | ![]() | DIG33 | DIFFUSION OF ALUMINUM |
![]() | ![]() | DIG34 | DIFFUSION OF BORON OR SILICON |
![]() | ![]() | DIG35 | DIFFUSION THRU A LAYER |
![]() | ![]() | DIG36 | DIFFUSION, NONSELECTIVE |
![]() | ![]() | DIG37 | DIFFUSION-DEPOSITION |
![]() | ![]() | DIG38 | DIFFUSIONS-STAGED |
![]() | ![]() | DIG39 | DISPLACE P-N JUNCTION |
![]() | ![]() | DIG40 | DOPANTS, SPECIAL |
![]() | ![]() | DIG41 | DOPING CONTROL IN CRYSTAL GROWTH |
![]() | ![]() | DIG42 | DOPING, GRADED, FOR TAPERED ETCHING |
![]() | ![]() | DIG43 | DUAL DIELECTRIC |
![]() | ![]() | DIG44 | EDGE DIFFUSION UNDER MASK |
![]() | ![]() | DIG45 | ELECTRIC FIELD |
![]() | ![]() | DIG46 | ELECTRON BEAM TREATMENT OF DEVICES |
![]() | ![]() | DIG47 | EMITTER DIP |
![]() | ![]() | DIG48 | ENERGY BEAM ASSISTED EPI GROWTH |
![]() | ![]() | DIG49 | EQUIVALENCE AND OPTIONS |
![]() | ![]() | DIG50 | ETCH AND REFILL |
![]() | ![]() | DIG51 | ETCHING |
![]() | ![]() | DIG52 | FACE TO FACE DEPOSITION |
![]() | ![]() | DIG53 | FIELD EFFECT TRANSISTORS FETS |
![]() | ![]() | DIG54 | FLAT SHEETS-SUBSTRATES |
![]() | ![]() | DIG55 | FUSE |
![]() | ![]() | DIG56 | GALLIUM ARSENIDE |
![]() | ![]() | DIG57 | GAS FLOW CONTROL |
![]() | ![]() | DIG58 | GE GERMANIUM |
![]() | ![]() | DIG59 | GERMANIUM ON SILICON OR GE-SI ON III-V |
![]() | ![]() | DIG60 | GETTERING |
![]() | ![]() | DIG61 | GETTERING-ARMORPHOUS LAYERS |
![]() | ![]() | DIG62 | GOLD DIFFUSION |
![]() | ![]() | DIG63 | GP II-IV-VI COMPOUNDS |
![]() | ![]() | DIG64 | GP II-VI COMPOUNDS |
![]() | ![]() | DIG65 | GP III-V (GENERIC) COMPOUNDS-PROCESSING |
![]() | ![]() | DIG66 | GP III-V LIQUID PHASE EPITAXY |
![]() | ![]() | DIG67 | GRADED ENERGY GAP |
![]() | ![]() | DIG68 | GRAPHITE MASKING |
![]() | ![]() | DIG69 | GREEN SHEETS |
![]() | ![]() | DIG70 | GUARD RINGS AND CMOS |
![]() | ![]() | DIG71 | HEATING, SELECTIVE |
![]() | ![]() | DIG72 | HETEROJUNCTIONS |
![]() | ![]() | DIG73 | HOLLOW BODY |
![]() | ![]() | DIG74 | HORIZONTAL MELT SOLIDIFICATION |
![]() | ![]() | DIG75 | IMIDE RESISTS |
![]() | ![]() | DIG76 | IMPLANT |
![]() | ![]() | DIG77 | IMPLANTATION OF SILICON ON SAPPHIRE |
![]() | ![]() | DIG78 | IMPURITY REDISTRIBUTION BY OXIDATION |
![]() | ![]() | DIG79 | INERT CARRIER GAS |
![]() | ![]() | DIG80 | INFRA-RED |
![]() | ![]() | DIG81 | INSULATORS |
![]() | ![]() | DIG82 | ION IMPLANTATION FETS/COMS |
![]() | ![]() | DIG83 | ION IMPLANTATION, GENERAL |
![]() | ![]() | DIG84 | ION IMPLANTATION OF COMPOUND DEVICES |
![]() | ![]() | DIG85 | ISOLATED-INTEGRATED |
![]() | ![]() | DIG86 | ISOLATED ZONES |
![]() | ![]() | DIG87 | I2L INTEGRATED INJECTION LOGIC |
![]() | ![]() | DIG88 | J-FET (JUNCTION FIELD EFFECT TRANSISTOR) |
![]() | ![]() | DIG89 | JOSEPHSON DEVICES |
![]() | ![]() | DIG90 | LASER ANNEAL |
![]() | ![]() | DIG91 | LASER BEAM PROCESSING OF FETS |
![]() | ![]() | DIG92 | LASER BEAM PROCESSING-DIODES OR TRANSISTOR |
![]() | ![]() | DIG93 | LASER BEAM TREATMENT IN GENERAL |
![]() | ![]() | DIG94 | LASER BEAM TREATMENT OF COMPOUND DEVICES |
![]() | ![]() | DIG95 | LASER DEVICES |
![]() | ![]() | DIG96 | LATERAL TRANSISTOR |
![]() | ![]() | DIG97 | LATTICE STRAIN AND DEFECTS |
![]() | ![]() | DIG98 | LAYER CONVERSION |
![]() | ![]() | DIG99 | LED, MULTICOLOR |
![]() | ![]() | DIG100 | LIFT-OFF MASKING |
![]() | ![]() | DIG101 | LIQUID PHASE EPITAXY LPE |
![]() | ![]() | DIG102 | MASK ALIGNMENT |
![]() | ![]() | DIG103 | MASK, DUAL FUNCTION E.G., DIFFUSION AND OXIDATION |
![]() | ![]() | DIG104 | MASK, MOVABLE |
![]() | ![]() | DIG105 | MASKS, METAL |
![]() | ![]() | DIG106 | MASKS, SPECIAL |
![]() | ![]() | DIG107 | MELT |
![]() | ![]() | DIG108 | MELT BACK |
![]() | ![]() | DIG109 | MEMORY DEVICES |
![]() | ![]() | DIG110 | METAL-ORGANIC CVD (RUEHRWEIN TYPE) |
![]() | ![]() | DIG111 | NARROW MASKING |
![]() | ![]() | DIG112 | NITRIDATION, DIRECT, OF SILICON |
![]() | ![]() | DIG113 | NITRIDES OF BORON OR ALUMINUM OR GALLIUM |
![]() | ![]() | DIG114 | NITRIDES OF SILICON |
![]() | ![]() | DIG115 | ORIENTATION |
![]() | ![]() | DIG116 | OXIDATION, DIFFERENTIAL |
![]() | ![]() | DIG117 | OXIDATION, SELECTIVE |
![]() | ![]() | DIG118 | OXIDE FILMS |
![]() | ![]() | DIG119 | PHOSPHIDES OF GALLIUM OR INDIUM |
![]() | ![]() | DIG120 | PHOTOCATHODES-CS COATED AND SOLAR CELL |
![]() | ![]() | DIG121 | PLASTIC TEMPERATURE |
![]() | ![]() | DIG122 | POLYCRYSTALLINE |
![]() | ![]() | DIG123 | POLYCRYSTALLINE DIFFUSE ANNEAL |
![]() | ![]() | DIG124 | POLYCRYSTALLINE EMITTER |
![]() | ![]() | DIG125 | POLYCRYSTALLINE PASSIVATION |
![]() | ![]() | DIG126 | POWER FETS |
![]() | ![]() | DIG127 | PROCESS INDUCED DEFECTS |
![]() | ![]() | DIG128 | PROTON BOMBARDMENT OF SILICON |
![]() | ![]() | DIG129 | PULSE DOPING |
![]() | ![]() | DIG130 | PURIFICATION |
![]() | ![]() | DIG131 | REACTIVE ION ETCHING RIE |
![]() | ![]() | DIG132 | RECOIL IMPLANTATION |
![]() | ![]() | DIG133 | REFLOW OXIDES AND GLASSES |
![]() | ![]() | DIG134 | REMELT |
![]() | ![]() | DIG135 | REMOVAL OF SUBSTRATE |
![]() | ![]() | DIG136 | RESISTORS |
![]() | ![]() | DIG137 | RESISTS |
![]() | ![]() | DIG138 | ROUGHENED SURFACE |
![]() | ![]() | DIG139 | SCHOTTKY BARRIER |
![]() | ![]() | DIG140 | SCHOTTKY BARRIER CONTACTS |
![]() | ![]() | DIG141 | SELF-ALIGNMENT COAT GATE |
![]() | ![]() | DIG142 | SEMICONDUCTOR-METAL-SEMICONDUCTOR |
![]() | ![]() | DIG143 | SHADOW MASKING |
![]() | ![]() | DIG144 | SHALLOW DIFFUSION |
![]() | ![]() | DIG145 | SHAPED JUNCTIONS |
![]() | ![]() | DIG146 | SHEET RESISTANCE (DOPANT PARAMETERS) |
![]() | ![]() | DIG147 | SILICIDES |
![]() | ![]() | DIG148 | SILICON CARBIDE |
![]() | ![]() | DIG149 | SILICON ON III-V |
![]() | ![]() | DIG150 | SILICON ON SAPPHIRE SOS |
![]() | ![]() | DIG151 | SIMULTANEOUS DIFFUSION |
![]() | ![]() | DIG152 | SINGLE CRYSTAL ON AMORPHOUS SUBSTRATE |
![]() | ![]() | DIG153 | SOLAR CELLS-IMPLANTATIONS-LASER BEAM |
![]() | ![]() | DIG154 | SOLID PHASE EPITAXY |
![]() | ![]() | DIG155 | SOLID SOLUBILITY |
![]() | ![]() | DIG156 | SONOS |
![]() | ![]() | DIG157 | SPECIAL DIFFUSION AND PROFILES |
![]() | ![]() | DIG158 | SPUTTERING |
![]() | ![]() | DIG159 | STRAIN GAUGES |
![]() | ![]() | DIG160 | SUPERLATTICE |
![]() | ![]() | DIG161 | TAPERED EDGES |
![]() | ![]() | DIG162 | TESTING STEPS |
![]() | ![]() | DIG163 | THICK-THIN OXIDES |
![]() | ![]() | DIG164 | THREE DIMENSIONAL PROCESSING |
![]() | ![]() | DIG165 | TRANSMUTATION DOPING |
![]() | ![]() | DIG166 | TRAVELING SOLVENT METHOD |
![]() | ![]() | DIG167 | TWO DIFFUSIONS IN ONE HOLE |
![]() | ![]() | DIG168 | V-GROOVES |
![]() | ![]() | DIG169 | VACUUM DEPOSITION (INCLUDES MOLECULAR BEAM EPITAXY |
![]() | ![]() | DIG170 | VAPOR-LIQUID-SOLID |
![]() | ![]() | DIG171 | VARISTOR |
![]() | ![]() | DIG172 | VIDICONS |
![]() | ![]() | DIG173 | WASHED EMITTER |
![]() | ![]() | DIG174 | ZENER DIODES |
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