WPC5 Bhs#x֬|bV5wܑx9&uA)@F$|]/N; g '4yP-_77V`\[ s l50G$Nh1Q-^1\ӿHQYpJB XӏckUװ v2P';ރ1K<7dUqA,p՗L֯dtF%=פA}g۞!vdкPOLYOU|'VI91"ͦ9'HY'Pow}7U 38l9{hP#Ao%LrޒU0ޔ=u\݁LHtsϐZX)* wRr4 *#pU~N1 % 0(U N 0DUH3{ 0DsUHw4& m(UE,?U Nk^  0~U>CNUNU@U<UNMU*UNXZkZ 0}N5X (X$[Z V VC ^XTOUHU : ^% \UDX# ({$ ZV! \w ^ 1! O!Xk!Z!R"Xo"X"Z#Zy# V#R)$X{$ B*$Z$ RW%N%X%ZO& f&b' q''X'Z'XW(Z( )!)X7)Z) \)XE* V*R* \E+X+ ^+ZW, ^,Z-Xi- X-T. 2m...N./ R3/Z/$/00 ^5050505050505050X0 V0RA1 t1p2 Zw2V2 \'3X33:3X4Zm4R4R5Zk55555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555555 B5Adobe PDF$,,,,$0(hH  Z 6Times New Roman RegularX($')x  Z 6Times New Roman Regular '  _lXX#lCommerceControlList@===SupplementNo.1toPart774333(#Category3"page  1  (3$ !  +   0Times New Roman Bold  )  _ XXXX #X X# #ExportAdministrationRegulations;(#October14,2008# ##i#(3$ !  +hH  0Times New Roman Boldb8z3|x-U $Tahoma(hH  Z 6Times New Roman RegularN9s V& 8Document[8]Document Style0..8` ..` \  `&Times New Roman 6Times New Roman Regular'n2 Z(Times New Roman \  `$Times NewRoman(9 Z6Times New Roman Regular%2A`Arial'ON  Z 6Times New Roman Regular3E001 Technology according to the General3E201 Technology according to the General3A292 Oscilloscopes and transient recorders   (O$3A992 General purpose electronic equipment3D001 "Software"3E001 Technology according to the General3D001 "Software"3A002.g.13E201 Technology according to the General3A101 Electronic equipment, devices and3A201 Electronic components, other than3A991 Electronic devices and components not3E001 Technology according to the General b.1.b. Equipment specially designed for2\  `0TimesNewRoman,Italic2\  `"TimesNewRoman3A292 Oscilloscopes and transient recorders3A992 General purpose electronic equipment.\  `,TimesNewRoman,Bold3E001 Technology according to the General~3A001,b.1.a.4.c. 3A001,b.1.a.4.c. a. Analog-to-digital converters, usable ina. Analog-to-digital converters, usable in3E001 Technology according to the General3E201 Technology according to the General~3a001.b.4.b.~3a001.b.8. 3E001 Technology according to the General3E201 Technology according to the Generale.2. High energy storage capacitors, as e.3. Superconductive electromagnets and3E001 Technology according to the General3E201 Technology according to the General3E201 Technology according to the General3A227 High-voltage direct current power3A227 High-voltage direct current power3E001 Technology according to the General&  d d3E201 Technology according to the General3A226 High-power direct current power3A226 High-power direct current power3E001 Technology according to the General3E201 Technology according to the Generalk. Superconductive electromagnets or solenoidsk. Superconductive electromagnets or solenoids~3a002.g.2.3a001.b.4.b.3E001 Technology according to the General3E201 Technology according to the General3E001 Technology according to the General3E201 Technology according to the General3a001.b.8. 3a002.g.2.3E001 Technology according to the General3E201 Technology according to the General3E292 Technology according to the General3E292 Technology according to the General3A225 Frequency changers (also known as3A225 Frequency changers (also known as3A233 Mass spectrometers, other than those3A233 Mass spectrometers, other than those3B991 Equipment not controlled by 3B001 for3B991 Equipment not controlled by 3B001 for3B992 Equipment not controlled by 3B002 for3B992 Equipment not controlled by 3B002 for3E001 Technology according to the General b.1.b. Equipment specially designed for b.1.b. Equipment specially designed for3a001.e.4. Solar cells3a001.e.4. Solar cells3D101 Software specially designed or3a001.b.8. 3D101 Software specially designed or3E101 Technology according to the General3A001,b.1.a.4.c. 3a001.b.4.b.3a001.b.8. 3E101 Technology according to the General3E001 Technology according to the Generalg. Electronic vacuum tubes operating atg. Electronic vacuum tubes operating at3A999.a Frequency changers capable of operating in the3A999.a Frequency changers capable of operating in the3A992.a Electronic test equipment, n.e.s.3A992.a Electronic test equipment, n.e.s.3D991 Software specially designed for the3D991 Software specially designed for the b.1.a.4.c. Being space b.4.b. Rated for operation at frequencies b.8. Microwave power amplifiers containing3A101 Electronic equipment, devices and3A201 Electronic components, other than3A991 Electronic devices and components not3a002.g.2. d !  _    +(X(#(#(CATEGORY3ELECTRONICS (  *,X,xXX*A.SYSTEMS,EQUIPMENTAND  COMPONENTS  Ѐ    1  &%XX  Note1: Thecontrolstatusofequipmentand   componentsdescribedin3A001or3A002,other  d thanthosedescribedin3A001.a.3to3A001.a.10 _ 7 or3A001.a.12,whicharespeciallydesignedfor 2  orwhichhavethesamefunctionalcharacteristics   asotherequipmentisdeterminedbythecontrol   statusoftheotherequipment.     Note2: Thecontrolstatusofintegrated Q)  circuitsdescribedin3A001.a.3to3A001.a.9or %  3A001.a.12thatareunalterablyprogrammedor   designedforaspecificfunctionforother   equipmentisdeterminedbythecontrolstatusof v theotherequipment. qI   N.B.: Whenthemanufacturerorapplicant  cannotdeterminethecontrolstatusoftheother  equipment,thecontrolstatusoftheintegrated  circuitsisdeterminedin3A001.a.3to3A001.a.9 i and3A001.a.12.Iftheintegratedcircuitisa d< silicon-based"microcomputermicrocircuit"or 7 _microcontroller_Ԁmicrocircuitdescribedin   3A001.a.3havinganoperand(data)wordlength  of8bitorless,thecontrolstatusoftheintegrated  circuitisdeterminedin3A001.a.3. [  3A001Electroniccomponentsandspecially    designedcomponentstherefor,asfollows(see !! ListofItemsControlled).  ""  LicenseRequirements  W$/$   ReasonforControl:NS,MT,NP,AT && Control(s)0 4 0` 440 ` ` 0  0  0  CountryChart'!( NSappliestoentireentry0 0  NSColumn2Q))#* &%%&MTappliesto3A001.a.1.a0   MTColumn1#&%%& #&%%&*$,   whenusablein missiles;    +%- andto3A001.a.5.awhen0 L (-L(#L(#  designedormodifiedfor . militaryuse,hermetically / sealedandratedforoperation |0 inthetemperaturerangefrom x P1 below54Ctoabove+125C. L $2 #&%%&š #NPappliestopulsedischarge0 x NPColumn1 4x(#x(# capacitorsin3A001.e.2  5 andsuperconducting  t6 solenoidalelectromagnets pH7 in3A001.e.3thatmeetor D 8 exceedthetechnicalparameters  9 in3A201.aand3A201.b,  : respectively  ; ATappliestoentireentry0 L 0xL(#L(#ATColumn1h@ =x(#x(#  LicenseExceptions  ?  D LVS:  N/AforMTorNP A  D  p   Yesfor: gB  D  p   $1500:3A001.c c;C  D  p 0  $3000:3A001.b.1,b.2,b.3,b.9,.d,.e, 7D .f,and.g E(#(#  D  p 0  $5000:3A001.a(excepta.1.aand F a.5.awhencontrolledforMT),and G .b.4tob.7  _H(#(#  D GBS:0  &%%&Yesfor3A001.a.1.b,a.2toa.12 [3I (except.a.5.awhencontrolledfor /J MT),b.2,b.8(exceptfor_TWTAs_ K exceeding18GHz),b.9.,and.g.#&%%&#L(#(# .0 D CIV:0D(#D(#Yesfor3A001.a.3,a.4,a.7,anda.11.  M(#(#  D &%%&ListofItemsControlled  S"+O  D Unit:  Number. #Q 0 D RelatedControls:#&%%&³#1.)Thefollowing $R commoditiesareundertheexportlicensing %~S authorityoftheDepartmentofState, z&R T DirectorateofDefenseTradeControls(22 N'&!U _CFR_Ԁpart121)when spacequalifiedand "(!V operatingatfrequencieshigherthan31.8 ("W GHz:helixtubes(travelingwavetubes )#X (_TWT_))definedin4 )!O  5  3A001.b.1.a.4.c6{!O  7 "; *v$Y microwavesolidstateamplifiersdefinedin r+J%Z 4 D!O  5  3A001.b.4.b6!O  7 Ԁtravelingwavetubeamplifiers F,&[D(#D(# (_TWTA_)definedin4 !O  5  3A001.b.86!O  7 ;and ( derivativesthereof;2.)Thefollowing  commoditiesarealsoundertheexport  licensingauthorityoftheDepartmentofState, | DirectorateofDefenseTradeControls(22 x P _CFR_Ԁpart121):O9 N 9(a) Spacequalified&R%%&A%&RԀ#)A##&%)#)%&A)O#X#OXN#9 #N 9Ԁ#&R%Ax##&%%&Rŗ#&%%&solar L $ cells,_coverglass_Ԅinterconnectcellsor B  coveredinterconnectcells(_CIC_)assemblies,   solararraysand/orsolarpanels,witha   minimumaverageefficiencyof31%or    greatermeasuredatanoperatingtemperature j  of301K(28C)undersimulated'AM0' f>  illuminationwithan_irradiance_Ԁof1,367Watts :  persquaremeter(W/_m2_),and#&%%&#&%%&associatedsolar   concentrators,powerconditionersand/or   controllers,bearingandpowertransfer   assemblies,anddeployment b  hardware/systems;#&%%&4#O#X#OXN#9 #N 9&R%%&A%&RԀ#&R%A##&%%&R#O#Xw#OXN#9 #N 9(b)Radiation-hardened ^6 microelectroniccircuitscontrolledby T, CategoryXV(d)oftheUnitedStates E MunitionsList(_USML_);and(c)All 6 specificallydesignedormodifiedsystemsor ' subsystems,components,parts,accessories,  attachments,andassociatedequipment   controlledbyCategoryXV(e)ofthe_USML_.  ЀSeealso4 !O  5  3A1016"!O#s  7 >#,4 !O  5  3A2016#!O#s  7 #,and4 r!O  5  3A9916X$!Ol$s  7f$.N#9  #N 9O#X #OX 0  RelatedDefinitions:Forthepurposesof  integratedcircuitsin3A001.a.1,5x103  _Gy_(Si)=5x105Rads(Si);5x106_Gy_Ԁ(Si)/s t =5x108Rads(Si)/s.N#9 &%#O#X 9h%#&%%&p H   #&%%&'#&%%&Items: D! #&%%&‹'#&%%&O9 XN 9a.Generalpurposeintegratedcircuits,asfollows: "!   Note1: Thecontrolstatusofwafers(finished $l# orunfinished),inwhichthefunctionhasbeen l%D$ determined,istobeevaluatedagainstthe ?& % parametersof3A001.a. ' &   Note2: Integratedcircuitsincludethe ("( followingtypes: )i#)   Monolithicintegratedcircuits; 7+%+   Hybridintegratedcircuits;  ,%,  D _Multichip_Ԁintegratedcircuits; (, 0 D Filmtypeintegratedcircuits,including - silicon-on-sapphireintegratedcircuits;.D(#D(#  D Opticalintegratedcircuits. y/  D a.1.Integratedcircuitsdesignedorratedas H 1 radiationhardenedtowithstandanyofthe  2 following:  3  D  p a.1.a.Atotaldoseof5x103_Gy_Ԁ(Si),or  p5 higher; lD6  D  p a.1.b.Adoserateupsetof5x106_Gy_  8 (Si)/s,orhigher;or  9  D  D  p a.1.c.Afluence(integratedflux)of h ; neutrons(1_MeV_Ԁequivalent)of5x1013n/cmor d< < higheronsilicon,oritsequivalentforother 8= materials;  >  D  p Note: 3A001.a.1.cdoesnotapplyto @ MetalInsulatorSemiconductors(MIS). dA  D a.2. Microprocessormicrocircuits, 3 C  microcomputermicrocircuits,_microcontroller_ D microcircuits,storageintegratedcircuits E manufacturedfromacompoundsemiconductor, F analog-to-digitalconverters,digital-to-analog [G converters,electro-opticalor opticalintegrated W/H circuitsdesignedfor signalprocessing,field +I programmablelogicdevices,customintegrated J circuitsforwhicheitherthefunctionisunknown K orthecontrolstatusoftheequipmentinwhichthe  L integratedcircuitwillbeusedinunknown,Fast {!SM FourierTransform(FFT)processors,electrical O"'N erasableprogrammableread-onlymemories ##O (_EEPROMs_),flashmemoriesorstatic #P random-accessmemories(_SRAMs_),havinganyof $Q thefollowing: %wR  D  p a.2.a.Ratedforoperationatanambient G'!T temperatureabove398K(125$C); (!U  D  p a.2.b.Ratedforoperationatanambient )#W temperaturebelow218K(-55$C);or *o$X  D  p a.2.c.Ratedforoperationovertheentire ?,&Z ambienttemperaturerangefrom218K(-55$C)to ( 398K(125$C);    Note: 3A001.a.2doesnotapplytointegrated | circuitsforcivilautomobileorrailwaytrain | T applications. O '   a.3. Microprocessormicrocircuits,    microcomputermicrocircuitsand   _microcontroller_Ԁmicrocircuits,manufacturedfrom  v  acompoundsemiconductorandoperatingata rJ  clockfrequencyexceeding40MHz; F    Note: 3A001.a.3includesdigitalsignal   processors,digitalarrayprocessorsanddigital   coprocessors. q    a.4.Storageintegratedcircuitsmanufactured @ fromacompoundsemiconductor;    a.5.Analog-to-digitalanddigital-to-analog  converterintegratedcircuits,asfollows: h     a.5.a.Analog-to-digitalconvertershaving 8 anyofthefollowing:        4 a.5.a.1. Aresolutionof8bitormore,  butlessthan10bit,withanoutputrategreater ` than500millionwordspersecond; \4      4 a.5.a..2Aresolutionof10bitor  more,butlessthan12bit,withanoutputrate  greaterthan200millionwordspersecond;         4 a.5.a.3.Aresolutionof12bitwithan T"," outputrategreaterthan105millionwordsper (## second; #$      4 a.5.a.4.Aresolutionofmorethan12 %|& bitbutequaltoorlessthan14bitwithanoutput x&P ' rategreaterthan10millionwordspersecond;or L'$!(      4 a.5.a.5.Aresolutionofmorethan14 ("* bitwithanoutputrategreaterthan2.5million )#+ wordspersecond; *t$,     a.5.b.Digital-to-analogconverterswitha D,&. resolutionof12bitormoreanda settlingtime (. oflessthan10ns; /  D TechnicalNotes:  |1  D  p 1.Aresolutionofnbitcorrespondstoa O '3 quantizationof2nlevels. # 4  D  p 2.Thenumberofbitsintheoutputword  6 isequaltotheresolutionofthe  t7 analogue-to-digitalconverter. oG8  D  p 3.  Theoutputrateisthemaximum  : outputrateoftheconverter,regardlessof  ; architectureor_oversampling_.Vendorsmayalso  < refertotheoutputrateassamplingrate, f = conversionrateorthroughputrate.Itisoften a9 > specifiedinmegahertz(MHz)or_mega_Ԁsamples 4 ? persecond(_MSPS_). @  D  p 4.  Forthepurposeofmeasuringoutput B rate,oneoutputwordpersecondisequivalentto XC oneHertzoronesamplepersecond. S+D  D a.6.Electro-opticaland opticalintegrated F circuits,designedfor signalprocessingand G havingallofthefollowing: zH  D  p a.6.a.Oneormorethanoneinternal J"J  laserdiode; K  D  p a.6.b.Oneormorethanoneinternallight M detectingelement;and  rN  D  p a.6.c.Opticalwaveguides; B"P  D a.7.Fieldprogrammablelogicdevices #R havinganyofthefollowing: $S  D  p a.7.a.Anequivalentusablegatecountof f&> U morethan30,000(2inputgates); :'!V  D  p a.7.b.Atypical basicgatepropagation ("X delaytimeoflessthan0.1ns;or )#Y  D  p a.7.c.Atogglefrequencyexceeding133 ^+6%[ MHz; 2, &\ _ԇ    Note: 3A001.a.7includes: (      4 0 ` SimpleProgrammableLogic  Devices(SPLDs),` `       4 0 ` ComplexProgrammableLogic ~ Devices(CPLDs),y Q` `       4 0 ` FieldProgrammableGateArrays L $ (FPGAs), ` `       4 0 ` FieldProgrammableLogic   Arrays(FPLAs),and ` `       4 0 ` FieldProgrammable  p  Interconnects(FPICs).kC ` `      TechnicalNote: Fieldprogrammable   logicdevicesarealsoknownasfield   programmablegateorfieldprogrammablelogic   arrays. h  Ѐ  a.8.[RESERVED] 7   a.9.Neuralnetworkintegratedcircuits;    a.10.Customintegratedcircuitsforwhichthe _ functionisunknown,orthecontrolstatusofthe [3 equipmentinwhichtheintegratedcircuitswillbe / usedisunknowntothemanufacturer,havingany  ofthefollowing:      a.10.a.Morethan1,000terminals; W     a.10.b.Atypical basicgatepropagation ' delaytimeoflessthan0.1ns;or      a.10.c.Anoperatingfrequencyexceeding  {  3GHz; w!O!   a.11.Digitalintegratedcircuits,otherthan ## thosedescribedin3A001.a.3to3A001.a.10and #$ 3A001.a.12,baseduponanycompound $% semiconductorandhavinganyofthefollowing: %s&     a.11.a.Anequivalentgatecountofmore C'!( than3,000(2inputgates);or (!)     a.11.b.Atogglefrequencyexceeding1.2 )#+ GHz; *k$,   a.12.FastFourierTransform(FFT)processors ;,&. havingaratedexecutiontimeforanN-point (. complexFFToflessthan(Nlog2N)/20,480ms, / whereNisthenumberofpoints; 0  D  p TechnicalNote: WhenNisequalto1,024 x P2 points,theformulain3A001.a.12givesan P (3 executiontimeof500%s. $ 4 b.Microwaveormillimeterwavecomponents,as  6 follows:  x7  D b.1.Electronicvacuumtubesandcathodes,as H 9 follows:  :  D Note1: 3A001.b.1doesnotcontroltubes  < designedorratedforoperationinanyfrequency t = bandandhavingallofthefollowing: oG >  D  p a.Doesnotexceed31.8GHz;and B?  D  p b.Is allocatedbytheITUfor @ radio-communicationsservices,butnotfor A radio-determination. B  D Note2: 3A001.b.1doesnotcontrol c;D non- space-qualifiedtubeshavingallthe ;E following: F  D  p a)Anaverageoutputpowerequaltoor G lessthan50W;and H  D  p b)Designedorratedforoperationinany _I frequencybandandhavingallofthefollowing: Z2J  D  p   1)Exceeds31.8GHzbutdoesnot -K exceed43.5GHz;and L  D  p   2)Is allocatedbytheITUfor M radio-communicationsservices,butnotfor  ~N radio-determination. y!QO  D  D  p b.1.a.Travelingwavetubes,pulsedor  #Q continuouswave,asfollows: #R  D  p   b.1.a.1.Tubesoperatingat %tT frequenciesexceeding31.8GHz; p&H U  D  p   b.1.a.2.Tubeshavingacathode (!W heaterelementwithaturnontimetoratedRF ("X poweroflessthan3seconds; )#Y  D  p   b.1.a.3.Coupledcavitytubes,or h+@%[ derivativesthereof,witha fractionalbandwidth <,&\ ofmorethan7%orapeakpowerexceeding2.5 ( kW;       4 b.1.a.4.Helixtubes,orderivatives | thereof,havinganyofthefollowing: x P      4  ` b.1.a.4.a.An instantaneous   bandwidthofmorethanoneoctave,andaverage   power(expressedinkW)timesfrequency   (expressedinGHz)ofmorethan0.5;  t       4  ` b.1.a.4.b.An instantaneous D  bandwidthofoneoctaveorless,andaverage   power(expressedinkW)timesfrequency   (expressedinGHz)ofmorethan1;or        4  ` b.1.a.4.c.% 3 Being spacequalified; h@      b.1.b.Crossed-fieldamplifiertubeswith  againofmorethan17dB;      b.1.c.Impregnatedcathodesdesignedfor d electronictubesproducingacontinuousemission `8 currentdensityatratedoperatingconditions 4  exceeding5A/cm2;    b.2.Microwave MonolithicIntegrated  Circuits(MMIC)poweramplifiershavinganyof \ thefollowing: X0     b.2.a. ` Ratedforoperationatfrequencies  exceeding3.2GHzuptoandincluding6GHzand  withanaverageoutputpowergreaterthan4W(36    dBm)witha fractionalbandwidthgreaterthan |!T! 15%; P"("     b.2.b. ` Ratedforoperationatfrequencies #$ exceeding6GHzuptoandincluding16GHzand $% withanaverageoutputpowergreaterthan1W(30 %x& dBm)witha fractionalbandwidthgreaterthan t&L ' 10%; H' !(     b.2.c. ` Ratedforoperationatfrequencies ("* exceeding16GHzuptoandincluding31.8GHz )#+ andwithanaverageoutputpowergreaterthan *p$, 0.8W(29dBm)witha fractionalbandwidth l+D%- greaterthan10%; @,&. Ї D  p b.2.d.  Ratedforoperationatfrequencies (. exceeding31.8GHzuptoandincluding37.5 / GHz; 0  D  p b.2.e.  Ratedforoperationatfrequencies x P2 exceeding37.5GHzuptoandincluding43.5GHz L $3 andwithanaverageoutputpowergreaterthan  4 0.25W(24dBm)witha fractionalbandwidth  5 greaterthan10%;or  6  D  p b.2.f.  Ratedforoperationatfrequencies pH8 exceeding43.5GHz. D 9  D Note1: 3A001.b.2doesnotcontrolbroadcast  ; satelliteequipmentdesignedorratedtooperatein  < thefrequencyrangeof40.5to42.5GHz. o =  D Note2: ThecontrolstatusoftheMMIC >? whoseratedoperatingfrequencyincludes @ frequencieslistedinmorethanonefrequency A range,asdefinedby3A001.b.2.athrough B 3A001.b.2.f,isdeterminedbythelowestaverage gC outputpowercontrolthreshold. b:D  D Note3: Notes1and2followingtheCategory  F 3headingforA.Systems,Equipment,and G Componentsmeanthat3A001.b.2.doesnot H controlMMICsiftheyarespeciallydesignedfor _I otherapplications,e.g.,telecommunications, Z2J radar,automobiles. -K  D f  g b.3.Discretemicrowavetransistorshaving M anyofthefollowing:  N  D  p b.3.a.  Ratedforoperationatfrequencies P"(P exceeding3.2GHzuptoandincluding6GHzand $#Q havinganaverageoutputpowergreaterthan60W #R (47.8dBm); $S  D  p b.3.b.  Ratedforoperationatfrequencies t&L U exceeding6GHzuptoandincluding31.8GHz H' !V andhavinganaverageoutputpowergreaterthan (!W 20W(43dBm); ("X  D  p b.3.c.  Ratedforoperationatfrequencies *p$Z exceeding31.8GHzuptoandincluding37.5GHz l+D%[ andhavinganaverageoutputpowergreaterthan @,&\ 0.5W(27dBm); (     b.3.d. ` Ratedforoperationatfrequencies  exceeding37.5GHzuptoandincluding43.5GHz | andhavinganaverageoutputpowergreaterthan x P 1W(30dBm);or L $     b.3.e. ` Ratedforoperationatfrequencies   exceeding43.5GHz;     Note:  4 Thecontrolstatusofatransistor pH  whoseratedoperatingfrequencyincludes G  frequencieslistedinmorethanonefrequency   range,asdefinedby3A001.b.3.athrough   3A001.b.3.e,isdeterminedbythelowestaverage   outputpowercontrolthreshold. k    b.4.Microwavesolidstateamplifiersand : microwaveassemblies/modulescontaining  microwavesolidstateamplifiers,havinganyof  thefollowing:      b.4.a. ` Ratedforoperationatfrequencies ^6 exceeding3.2GHzuptoandincluding6GHzand 2  withanaverageoutputpowergreaterthan60W  (47.8dBm)witha fractionalbandwidthgreater  than15%;      % 9 b.4.b. ` Ratedforoperationatfrequencies V. exceeding6GHzuptoandincluding31.8GHz * andwithanaverageoutputpowergreaterthan  15W(42dBm)witha fractionalbandwidth  greaterthan10%;  ~      b.4.c. ` Ratedforoperationatfrequencies N"&" exceeding31.8GHzuptoandincluding37.5 "## GHz; #$     b.4.d. ` Ratedforoperationatfrequencies %v& exceeding37.5GHzuptoandincluding43.5GHz r&J ' andwithanaverageoutputpowergreaterthan1W F'!( (30dBm)witha fractionalbandwidthgreater (!) than10%; ("*     b.4.e. ` Ratedforoperationatfrequencies *n$, exceeding43.5GHz;or j+B%-  >,&.  D  p b.4.f.  Ratedforoperationatfrequencies (. above3.2GHzandallofthefollowing: /  D  p   b.4.f.1.  Anaverageoutputpower(in |1 watts),P,greaterthan150dividedbythe x P2 maximumoperatingfrequency(inGHz)squared L $3 [P>150W*GHz2/fGHz2];  4  D  p   b.4.f.2.  A fractionalbandwidthof  6 5%orgreater;and  t7  D  p   b.4.f.3.  Anytwosidesperpendicular D 9 tooneanotherwithlengthd(incm)equaltoor  : lessthan15dividedbythelowestoperating  ; frequencyinGHz[d15cm*GHz/fGHz];  <  D  TechnicalNote: #&%%&'#&%%&3.2GHzshouldbeusedas h@ > thelowestoperatingfrequency#&%%&}#&%%&Ԁ(f#&%%&†~#&%%&2nF<#&%%&~#&%%&GHz#&%J&"#&%J&<nF#&%J&j#&%J&)#&%%&#&%%&Ԁinthe <? formulain3A001.b.4.f.3.,foramplifiersthathave @ aratedoperationrangeextendingdownwardto A 3.2GHzand#&%%&#&%%&Ԁbelow[d#&%%&#&%%&15cm*GHz/3.2fGHz].#&%%&E#&%%& B  D N.B.:   MMICpoweramplifiersshouldbe \4D evaluatedagainstthecriteriain3A001.b.2. 3 E  D Note1: 3A001.b.4.doesnotcontrol G broadcastsatelliteequipmentdesignedorratedto H operateinthefrequencyrangeof40.5to42.5 ]I GHz. X0J  D  Note2: Thecontrolstatusofanitemwhose L ratedoperatingfrequencyincludesfrequencies M listedinmorethanonefrequencyrange,as  N definedby3A001.b.4.athrough3A001.b.4.e,is }!UO determinedbythelowestaverageoutputpower P"(P controlthreshold. ##Q  D  p      D b.5.Electronicallyormagneticallytunable $S band-passorband-stopfilters,havingmorethan5 %vT tunableresonatorscapableoftuningacrossa1.5:1 r&J U frequencyband(fmax/fmin)inlessthan10%sand F'!V havinganyofthefollowing: (!W  D  p b.5.a.Aband-passbandwidthofmore )#Y than0.5%ofcenterfrequency;or *n$Z  D  p b.5.b.Aband-stopbandwidthoflessthan >,&\ 0.5%ofcenterfrequency; (   b.6.[RESERVED]    b.7.Convertersandharmonicmixers, x P designedtoextendthefrequencyrangeof L $ equipmentdescribedin3A002.c,3A002.d,   3A002.eor3A002.fbeyondthelimitsstated   therein;     b.8.% : ԀMicrowavepoweramplifierscontaining pH  tubescontrolledby3A001.b.1andhavingallof D  thefollowing:       b.8.a.Operatingfrequenciesabove3   GHz; l      b.8.b.Anaverageoutputpowerdensity < exceeding80W/kg;and      b.8.c.Avolumeoflessthan400cm3;    Note: 3A001.b.8doesnotcontrolequipment `8 designedorratedforoperationinanyfrequency 8 bandwhichis allocatedbytheITUfor   radio-communicationsservices,butnotfor  radio-determination.    b.9.Microwavepowermodules(MPM), X0 consistingof,atleast,atravelingwavetube,a , microwave monolithicintegratedcircuitandan  integratedelectronicpowerconditionerand  havingallofthefollowing:        b.9.a.Aturn-ontimefromofftofully P"(" operationalinlessthan10seconds; $##     b.9.b.Avolumelessthanthemaximum $% ratedpowerinWattsmultipliedby10cm3/W;and %x&  t&L '     b.9.c.An instantaneousbandwidth H' !( greaterthan1octave(fmax.>2fmin,)andhavingany (!) ofthefollowing: ("*      4 b.9.c.1.Forfrequenciesequaltoor *p$, lessthan18GHz,anRFoutputpowergreaterthan l+D%- 100W;or @,&. Ї D  p   b.9.c.2.Afrequencygreaterthan18 (. GHz; / Ѐ 0  D  p TechnicalNotes : |1  D  p 1.  Tocalculatethevolumein x P2 3A001.b.9.b.,thefollowingexampleisprovided: K #3 foramaximumratedpowerof20W,thevolume  4 wouldbe:20WX10cm3/W=200cm3.  5 Ѐ  6 Ѐ2.Theturn-ontimein3A001.b.9.a.  o7 referstothetimefromfully-offtofully jB8 operational,i.e.,itincludesthewarm-uptimeof = 9 theMPM.  : c.Acousticwavedevicesasfollowsandspecially  < designedcomponentstherefor: c =  D c.1.Surfaceacousticwaveandsurface 3 ? skimming(shallowbulk)acousticwavedevices @ (i.e., signalprocessingdevicesemploying A elasticwavesinmaterials),havinganyofthe B following: [C  D  p c.1.a.Acarrierfrequencyexceeding6 +E GHz; F  D  p c.1.b.Acarrierfrequencyexceeding1 H GHz,butnotexceeding6GHzandhavinganyof {SI thefollowing: O'J  D  p   c.1.b.1.Afrequencyside-lobe L rejectionexceeding55dB; M  D  p   c.1.b.2.Aproductofthemaximum s!KO delaytimeandthebandwidth(timein%sand G"P bandwidthinMHz)ofmorethan100; #Q  D  p   c.1.b.3.Abandwidthgreaterthan250 $S MHz;or %oT  D  p   c.1.b.4.Adispersivedelayofmore ?'!V than10%s;or (!W  D  p c.1.c.Acarrierfrequencyof1GHzor )#Y lessandhavinganyofthefollowing: *g$Z  D  p   c.1.c.1.Aproductofthemaximum 7,&\ delaytimeandthebandwidth(timein%sand ( bandwidthinMHz)ofmorethan100;       4 c.1.c.2.Adispersivedelayofmore | than10%s;or x P      4 c.1.c.3.Afrequencyside-lobe   rejectionexceeding55dBandabandwidthgreater   than100MHz;     c.2.Bulk(volume)acousticwavedevices pH  (i.e., signalprocessingdevicesemploying D  elasticwaves)thatpermitthedirectprocessingof   signalsatfrequenciesexceeding2.5GHz;     c.3.Acoustic-optic signalprocessing l  devicesemployinginteractionbetweenacoustic h@  waves(bulkwaveorsurfacewave)andlight < wavesthatpermitthedirectprocessingofsignals  orimages,includingspectralanalysis,correlation  orconvolution;  d.Electronicdevicesandcircuitscontaining `8 components,manufacturedfrom 4   superconductivematerials,speciallydesigned  foroperationattemperaturesbelowthe critical  temperatureofatleastoneofthe   superconductiveconstituentsandhavinganyof \ thefollowing: X0   d.1.Currentswitchingfordigitalcircuits  using superconductivegateswithaproductof  delaytimepergate(inseconds)andpower    dissipationpergate(inwatts)oflessthan10-14J; |!T! or P"("   d.2.Frequencyselectionatallfrequencies #$ usingresonantcircuitswithQ-valuesexceeding $% 10,000; %w& e.Highenergydevicesasfollows: G'!(   e.1.Cellsandphotovoltaicarraysas ("* follows: )#+      4  `       <  h       e.1.a.Primarycellshavinganenergy k+C%- densityexceeding550Wh/kgat293K(20C); ?,&. Ї D  p e.1.b.Secondarycellshavinganenergy (. densityexceeding250Wh/kgat293K(20C); /  D TechnicalNotes:  |1  D 1.  p Forthepurposeof3A001.e.1.,energy | T2 density(Wh/kg)iscalculatedfromthenominal P (3 voltagemultipliedbythenominalcapacityin # 4 ampere-hours(Ah)dividedbythemassin  5 kilograms.Ifthenominalcapacityisnotstated,  6 energydensityiscalculatedfromthenominal  t7 voltagesquaredthenmultipliedbythedischarge oG8 durationinhoursdividedbythedischargeloadin B 9 Ohmsandthemassinkilograms.  :  D 2.  p Forthepurposeof3A001.e.1.,a'cell'is  ; definedasanelectrochemicaldevice,whichhas  < positiveandnegativeelectrodes,anelectrolyte, g = andisasourceofelectricalenergy.Itisthebasic b: > buildingblockofabattery. 5 ?  D 3.  p Forthepurposeof3A001.e.1.a.,a @ 'primarycell'isa'cell'thatisnotdesignedtobe A chargedbyanyothersource. B  D 4.  p Forthepurposeof3A001.e.1.b.,a ZC secondarycellisa'cell'thatisdesignedtobe V.D chargedbyanexternalelectricalsource. )E  Note:  p 3A001.e.doesnotcontrolbatteries, F includingsinglecellbatteries. G O#X (#OXN#9 )(#N 9 D  p  D e.2.Highenergystoragecapacitorsas lI follows: ]J  D  p e.2.a.Capacitorswitharepetitionrateof g?L lessthan10Hz(singleshotcapacitors)andhaving X 0M allofthefollowing: I!!N  D  p   e.2.a.1.Avoltageratingequaltoor +#P morethan5kV; $Q  D  p   e.2.a.2.Anenergydensityequaltoor %S morethan250J/kg;and & T  D  p   e.2.a.3.Atotalenergyequaltoor ("V morethan25kJ; )e#W  D  p e.2.b.Capacitorswitharepetitionrateof 5+ %Y 10Hzormore(repetitionratedcapacitors)and  ,%Z havingallofthefollowing: (      4 e.2.b.1.Avoltageratingequaltoor  morethan5kV; |      4 e.2.b.2.Anenergydensityequaltoor L $ morethan50J/kg;        4 e.2.b.3.Atotalenergyequaltoor   morethan100J;and  t       4 e.2.b.4.Acharge/dischargecyclelife D  equaltoormorethan10,000;     e.3. Superconductiveelectromagnetsand   solenoids,speciallydesignedtobefullycharged l  ordischargedinlessthanonesecondandhaving h@  allofthefollowing: <   Note: 3A001.e.3doesnotcontrol   superconductiveelectromagnetsorsolenoids  speciallydesignedforMagneticResonance g Imaging(MRI)medicalequipment. b:     e.3.a.Energydeliveredduringthe   dischargeexceeding10kJinthefirstsecond;      e.3.b.Innerdiameterofthecurrent ] carryingwindingsofmorethan250mm;and Y1     e.3.c.Ratedforamagneticinductionof  morethan8Tor overallcurrentdensityinthe  windingofmorethan300A/mm2;    ̀  e.4.Solarcells% d ,cell-interconnect-coverglass Q")" (CIC)assemblies,solarpanels,andsolararrays, %## whichare spacequalified,havingaminimum #$ averageefficiencyexceeding20%atanoperating $% temperatureof301K(28C)undersimulated %y& 'AM0'illuminationwithanirradianceof1,367 u&M ' Wattspersquaremeter(W/m2). I'!!(    TechnicalNote: 'AM0',or'AirMassZero', ("* referstothespectralirradianceofsunlightinthe )#+ earth'souteratmospherewhenthedistance *p$, betweentheearthandsunisoneastronomical k+C%- unit(AU).N#9 7#N 9O#X#OX >,&. Їf.Rotaryinputtypeshaftabsoluteposition (. encodershavinganyofthefollowing: /  D f.1.Aresolutionofbetterthan1partin |1 265,000(18bitresolution)offullscale;or x P2  D f.2.Anaccuracybetterthan2.5secondsof  4 arc;  5 g. D Solid-statepulsedpowerswitchingthyristor  t7 devicesandthyristormodules,usingeither pH8 electrically,optically,orelectronradiation D 9 controlledswitchmethodsandhavinganyofthe  : following:  ;  D g.1.  Amaximumturn-oncurrentrateof l = rise(di/dt)greaterthan30,000A/%sandoff-state h@ > voltagegreaterthan1,100V;or <?  D g.2.  Amaximumturn-oncurrentrateof A rise(di/dt)greaterthan2,000A/%sandhavingall B ofthefollowing: dC  D  p g.2.a.  Anoff-statepeakvoltageequalto 4 E orgreaterthan3,000V;and F  D  p g.2.b.  Apeak(surge)currentequaltoor H greaterthan3,000A. \I  Note1: 3A001.g.includes: ,K  D - p SiliconControlledRectifiers(SCRs) L  D - p ElectricalTriggeringThyristors(ETTs) M  D - p LightTriggeringThyristors(LTTs)  ~N  D - p IntegratedGateCommutatedThyristors y!QO (IGCTs) L"$P  D - p GateTurn-offThyristors(GTOs) #Q  D - p MOSControlledThyristors(MCTs) #R  D - p Solidtrons $S  Note2:   3A001.g.doesnotcontrolthyristor l&D U devicesandthyristormodulesincorporatedinto @'!V equipmentdesignedforcivilrailwayor civil (!W aircraftapplications.O#X޸#N#XXޜ##&%%&§#&%%& ("X #&%%&z#&%%& #&%%&#3A002Generalpurposeelectronicequipment d+<%[ andaccessoriestherefor,asfollows(seeListof ;,&\ ItemsControlled).&%%&  (  LicenseRequirements     ReasonforControl:NS,AT ~ V Control(s) 4  `      CountryChart &    NSappliestoentireentry   NSColumn2   ATappliestoentireentry   ATColumn1 uM    LicenseRequirementNotes :See743.1of   theEARforreportingrequirementsforexports   underLicenseExceptions.    LicenseExceptions  qI    LVS: 4 $3000:3A002.a,.e,.f,.g;       4 $5000:3A002.bto.d  #&%%&µ#0  GBS:04Yesfor3A002.a.1.;and3A002.b  (synthesizedoutputfrequencyof2.6 q GHzorlessanda"frequency mE switchingtime"of0.3msormore).A44 0  CIV:04Yesfor3A002.a.1(providedallof  thefollowingconditionsaremet:1)  Bandwidthsdonotexceed:4MHz  pertrackandhaveupto28tracksor i 2MHzpertrackandhaveupto42 e= tracks;2)Tapespeeddoesnotexceed 9 6.1m/s;3)Theyarenotdesignedfor   underwateruse;4)Theyarenot  ruggedizedformilitaryuse;and5)    Recordingdensitydoesnotexceed !a! 653.2magneticfluxsinewavesper ]"5" mm);and3A002.b(synthesized 1# # outputfrequencyof2.6GHzorless; $$ anda"frequencyswitchingtime"of $% 0.3msormore).&%%&%&44 #&%%&Ž# ListofItemsControlled  U'-!(   Unit:Number )"* 0  RelatedControls: Spacequalifiedatomic )#+ frequencystandardsdefinedin4&!O  5  3A002.g.16!Osup  7""Ԁare *$, subjecttotheexportlicensingauthorityofthe |+T%- DepartmentofState,DirectorateofDefenseP,(&. TradeControls(22CFRpart121.1,Category (. XV).Seealso4!O  5  3A2926~!OJ_  7Ԁand4"0!O  5  3A9926-!OAJ_  7$ o./D(#D(# 0 D RelatedDefinitions:Constantpercentage 0 bandwidthfiltersarealsoknownasoctaveor |1 fractionaloctavefilters.x P2D(#D(#  D Items: L $3 a.Recordingequipmentasfollowsandspecially  5 designedtesttapetherefor:  6  D a.1.Analoginstrumentationmagnetictape pH8 recorders,includingthosepermittingtherecording D 9 ofdigitalsignals(e.g.,usingahighdensitydigital  : recording(HDDR)module),havinganyofthe  ; following:  <  D  p a.1.a.Abandwidthexceeding4MHzper h@ > electronicchannelortrack; <?  D  p a.1.b.Abandwidthexceeding2MHzper A electronicchannelortrackandhavingmorethan B 42tracks;or dC  D  p a.1.c.Atimedisplacement(base)error, 4 E measuredinaccordancewithapplicableIRIGor F EIAdocuments,oflessthan0.1%s; G  D  p Note: Analogmagnetictaperecorders \I speciallydesignedforcivilianvideopurposesare \4J notconsideredtobeinstrumentationtape /K recorders. L  D a.2.Digitalvideomagnetictaperecorders  N havingamaximumdigitalinterfacetransferrate }!UO exceeding360Mbit/s; Q")P  D Note: 3A002.a.2doesnotcontroldigitalvideo #R magnetictaperecordersspeciallydesignedfor $S televisionrecordingusingasignalformat,which %|T mayincludeacompressedsignalformat, w&O U standardizedorrecommendedbytheITU,the J'"!V IEC,theSMPTE,theEBU,theETSI,ortheIEEE (!W forciviltelevisionapplications. ("X  D a.3.Digitalinstrumentationmagnetictapedata *o$Z recordersemployinghelicalscantechniquesor k+C%[ fixedheadtechniquesandhavinganyofthe ?,&\ following: (     a.3.a.Amaximumdigitalinterface  transferrateexceeding175Mbit/s;or |     a.3.b.Being spacequalified; L $   Note: 3A002.a.3doesnotcontrolanalog   magnetictaperecordersequippedwithHDDR   conversionelectronicsandconfiguredtorecord  w  onlydigitaldata. rJ    a.4.Equipmenthavingamaximumdigital   interfacetransferrateexceeding175Mbit/sand   designedtoconvertdigitalvideomagnetictape   recordersforuseasdigitalinstrumentationdata m  recorders; iA    a.5.Waveformdigitizersandtransient  recorders,havingallofthefollowing:    N.B.: Seealso3A292. e     a.5.a.Digitizingratesequaltoormore 9 than200millionsamplespersecondanda   resolutionof10bitsormore;and      a.5.b.A'continuousthroughput'of2 a Gbit/sormore; ]5   TechnicalNotes:     1.0  Forthoseinstrumentswithaparallelbus  architecture,the'continuousthroughput'    rateisthehighestwordratemultipliedby ![! thenumberofbitsinaword.V"."   2.0  'Continuousthroughput'isthefastestdata #$ ratetheinstrumentcanoutputtomass $% storagewithoutthelossofany %z& informationwhilesustainingthesampling u&M ' rateandanalog-to-digitalconversion.H' !(   a.6.Digitalinstrumentationdatarecorders, ("* usingmagneticdiskstoragetechniqueandhaving )#+ allofthefollowing: *o$,     a.6.a.Digitizingrateequaltoormorethan ?,&. 100millionsamplespersecondandaresolutionof (. 8bitsormore;and /  D  p  D  p a.6.b.A'continuousthroughput'of1 |1 Gbit/sormore; x P2  D  p b. Frequencysynthesizer electronic  4 assemblieshavinga frequencyswitchingtime  5 fromoneselectedfrequencytoanotherofless  6 than1ms;  t7  Note : p Thecontrolstatusof signalanalyzers, D 9 signalgenerators,networkanalyzers,and  : microwavetestreceiversasstand-alone  ; instrumentsisdeterminedby3A002.c.,3A002.d.,  < 3A002.e.,and3A002.f.,respectively. i = c.Radiofrequency signalanalyzersasfollows: 8?  D c.1. Signalanalyzerscapableofanalyzing A anyfrequenciesexceeding31.8GHzbutnot B exceeding37.5GHzandhavinga3dBresolution `C bandwidth(RBW)exceeding10MHz; \4D  D c.2. Signalanalyzerscapableofanalyzing F frequenciesexceeding43.5GHz; G  D c.3. Dynamicsignalanalyzershavinga XI  real-timebandwidthexceeding500kHz; T,J  D Note: 3A002.c.3doesnotcontrolthose L  dynamicsignalanalyzersusingonlyconstant M percentagebandwidthfilters(alsoknownas  N octaveorfractionaloctavefilters). z!RO d. D Frequencysynthesizedsignalgenerators !#Q producingoutputfrequencies,theaccuracyand #R shorttermandlongtermstabilityofwhichare $S controlled,derivedfromordisciplinedbythe %uT internalmasterreferenceoscillator,andhaving q&I U anyofthefollowing: E'!V  D d.1.Amaximumsynthesizedfrequency ("X exceeding31.8GHz,butnotexceeding43.5GHz )#Y andratedtogeneratea'pulseduration'oflessthan *m$Z 100ns; i+A%[  =,&\   d.2.Amaximumsynthesizedfrequency ( exceeding43.5GHz;    d.3.A frequencyswitchingtimefromone | selectedfrequencytoanotherasspecifiedbyany x P ofthefollowing: L $     d.3.a. ` Lessthan10ns;       d.3.b. ` Lessthan100sforany  t  frequencychangeexceeding1.6GHzwithinthe pH  synthesizedfrequencyrangeexceeding3.2GHz D  butnotexceeding10.6GHz;       d.3.c. ` Lessthan250sforany   frequencychangeexceeding550MHzwithinthe l  synthesizedfrequencyrangeexceeding10.6GHz h@  butnotexceeding31.8GHz; <     d.3.d. ` Lessthan500sforany  frequencychangeexceeding550MHzwithinthe  synthesizedfrequencyrangeexceeding31.8GHz d butnotexceeding43.5GHz;or `8     d.3.e. ` Lessthan1mswithinthe  synthesizedfrequencyrangeexceeding43.5GHz;  or    d.4.Asinglesideband(SSB)phasenoise W/ betterthan(126+20log10F20log10f)in + dBc/Hz,whereFistheoff-setfromtheoperating  frequencyinHzandfistheoperatingfrequency  inMHz;     Note1 :Forthepurposeof3A002.d.,frequency O"'" synthesizedsignalgeneratorsincludesarbitrary ### waveformandfunctiongenerators. #$  Note2 :3A002.d.doesnotcontrolequipmentin %t& whichtheoutputfrequencyiseitherproducedby p&H ' theadditionorsubtractionoftwoormorecrystal C'!( oscillatorfrequencies,orbyanadditionor (!) subtractionfollowedbyamultiplicationofthe ("* result. )#+   TechnicalNotes:  c+;%-    ;,&.  D 1.  p Arbitrarywaveformandfunction (. generatorsarenormallyspecifiedbysamplerate / (e.g.,GSample/s),whichisconvertedtotheRF 0 domainbytheNyquistfactoroftwo.Thus,a1 z1 GSample/sarbitrarywaveformhasadirectoutput u M2 capabilityof500MHz.Or,whenoversamplingis H 3 used,themaximumdirectoutputcapabilityis  4 proportionatelylower.  5   D 2. Forthepurposesof3A002.d.1.,'pulse  l7 duration'isdefinedasthetimeintervalbetween h@8 theleadingedgeofthepulseachieving90%ofthe ; 9 peakandthetrailingedgeofthepulseachieving  : 10%ofthepeak.  ;  D Note: 3A002.ddoesnotcontrolequipmentin ` = whichtheoutputfrequencyiseitherproducedby `8 > theadditionorsubtractionoftwoormorecrystal 3 ? oscillatorfrequencies,orbyanadditionor @ subtractionfollowedbyamultiplicationofthe A result. B e.Networkanalyzerswithamaximumoperating S+D frequencyexceeding43.5GHz; 'E f.Microwavetestreceivershavingallofthe G following: {H  D f.1.Amaximumoperatingfrequency K#J exceeding43.5GHz;and K  D f.2.Beingcapableofmeasuringamplitude M andphasesimultaneously;O9 XN 9  sN g.Atomicfrequencystandardsbeinganyofthe `"8P following: Q#)Q O#X#N#XX#NXXOX D g.1.  Spacequalified; 3% S  D % M g.2.  Non-rubidiumandhavingalong-term ' U stabilityless(better)than1x10-11/month;or (!V  D g.3.  Non- spacequalifiedandhavingall )#X ofthefollowing: *|$Y  D  p g.3.a.  Beingarubidiumstandard; L,$&[ Ї    g.3.b. ` Long-termstabilityless(better) ( than1x10-11/month;and      g.3.c. ` Totalpowerconsumptionofless | than1Watt.O#X#N#XX#&%%&X7X%& x P #X7XXX7b##&%XX7#&%%& #&%%&#&%%&3A003  Spraycoolingthermalmanagement   systemsemployingclosedloopfluidhandling   andreconditioningequipmentinasealed  z  enclosurewhereadielectricfluidissprayed yQ  ontoelectroniccomponentsusingspecially P(  designedspraynozzlesthataredesignedto '  maintainelectroniccomponentswithintheir   operatingtemperaturerange,andspecially   designedcomponentstherefor. #&%%&E#&R%%&@%&R   #&R%@##&%%&Rū#&%%& #&%%&D#LicenseRequirements  W/   ReasonforControl:NS,AT  Control(s) 4  `      CountryChart  NSappliestoentireentry   NSColumn2 Q)      4 ATappliestoentireentry   ATColumn1   LicenseExceptions  y   LVS: 4 N/A  L$   GBS: 4 N/A     CIV: 4 N/A   ListofItemsControlled  !t!   Unit:Numberofsystems,componentsin$ G## 0  RelatedControls:N/A$$ 0  RelatedDefinitions:N/A$%   Items: %& Thelistofitemscontrollediscontainedinthe k'C!( ECCNheading.&%%& ?(") #&%%&±#&%%&#&%%& # % ( 3A101Electronicequipment,devicesand *$, components,otherthanthosecontrolledby +j%- 3A001,asfollows(seeListofItemsControlled).  i,A&. %(O  LicenseRequirements  /  D ReasonforControl:MT,AT 1  D  p          L Control(s)         L  x CountryChart O '3  D MTappliestoentireentry L  x MTColumn1  5 ATappliestoentireentry L  x ATColumn1  v7  LicenseExceptions  F 9  D LVS:  N/A    ;  D GBS:  N/A    <  D CIV:  N/A q =  D  p          L  x ListofItemsControlled  A?  D Unit:Number A 0 D RelatedControls:Itemscontrolledin46zN!O  5  3A101.a6!O%  7zS B aresubjecttotheexportlicensingauthorityof lC theU.S.DepartmentofState,Directorateof h@D DefenseTradeControls(See22CFRpart <E 121).FD(#D(#  D RelatedDefinitions:N/A G  D Items: H % 5 a.Analog-to-digitalconverters,usablein `8J  missiles,designedtomeetmilitary 4 K specificationsforruggedizedequipment; L %5+b.Acceleratorscapableofdelivering  N electromagneticradiationproducedby !\O bremsstrahlungfromacceleratedelectronsof2 X"0P MeVorgreater,andsystemscontainingthose ,#Q accelerators,usableforthe missilesorthe $R subsystemsof missiles. $S  D Note: 3A101.babovedoesnotinclude |&T U equipmentspeciallydesignedformedical P'(!V purposes. #(!W  % ) 3A201Electroniccomponents,otherthan *t$Z thosecontrolledby3A001,asfollows(seeList s+K%[ ofItemsControlled).  J,"&\ %). LicenseRequirements     ReasonforControl:NP,AT  Control(s) 4  `      CountryChart O '   NPappliestoentireentry   NPColumn1   ATappliestoentireentry   ATColumn1  v   LicenseExceptions  F    LVS: 4 N/A     GBS: 4 N/A     CIV: 4 N/A r   ListofItemsControlled  B   Unit:Number  0  RelatedControls:(1)SeeECCNs4;N!!O  5  3E0016 !O   7_.#N  ( developmentand production)and4<_M!!O  5  3E2016!O  7_-#> m ( use)fortechnologyforitemscontrolled iA underthisentry.(2)Alsosee4=_( !O  5  3A001.e.26!!O5acce  7ro&#c = (capacitors)and4>ro!O  5  3A001.e.36!O acce  7ro'7(superconducting  electromagnets).(3)Superconducting  electromagnetsspeciallydesignedorprepared  foruseinseparatinguraniumisotopesare e subjecttotheexportlicensingauthorityofthe a9 NuclearRegulatoryCommission(see10CFR 5  part110).    RelatedDefinitions:N/A    Items:    a.Pulsedischargecapacitorshavingeitherofthe Y"1" followingsetsofcharacteristics: -##   a.1.Voltageratinggreaterthan1.4kV, $% energystoragegreaterthan10J,capacitance %& greaterthan0.5%F,andseriesinductancelessthan }&U ' 50nH;or Q')!(   a.2.Voltageratinggreaterthan750V, ("* capacitancegreaterthan0.25%F,andseries )#+ inductancelessthan10nH; *y$, b.Superconductingsolenoidalelectromagnets I,!&. havingallofthefollowingcharacteristics: (.  D b.1.Capableofcreatingmagneticfields 0 greaterthan2T; |1  D b.2.Aratiooflengthtoinnerdiametergreater L $3 than2;  4  D b.3.Innerdiametergreaterthan300mm;and  6  D b.4.Magneticfielduniformtobetterthan1% pH8 overthecentral50%oftheinnervolume; D 9  D Note: 3A201.bdoesnotcontrolmagnets  ; speciallydesignedforandexported aspartsof  < medicalnuclearmagneticresonance(NMR) k = imagingsystems.Thephrase aspartofdoes f> > notnecessarilymeanphysicalpartinthesame 9? shipment;separateshipmentsfromdifferent  @ sourcesareallowed,providedtherelatedexport A documentsclearlyspecifythattheshipmentsare B dispatched aspartoftheimagingsystems. ]C c.FlashXraygeneratorsorpulsedelectron ,E acceleratorshavingeitherofthefollowingsetsof F characteristics: G  D c.1.Anacceleratorpeakelectronenergyof |TI 500keVorgreater,butlessthan25MeV,and P(J witha figureofmerit(K)of0.25orgreater;or $K  D c.2.Anacceleratorpeakelectronenergyof25 M MeVorgreater,anda peakpowergreaterthan  xN 50MW; t!LO  D Note: 3A201.cdoesnotcontrolaccelerators #Q thatarecomponentpartsofdevicesdesignedfor #R purposesotherthanelectronbeamorXray $S radiation(electronmicroscopy,forexample)nor %nT thosedesignedformedicalpurposes. i&A U  D TechnicalNotes:  (!W  D (1)The figureofmeritKisdefinedas:K= )#Y 1.7x103V2.65Q.Visthepeakelectronenergyin *b$Z millionelectronvolts.Iftheacceleratorbeam ]+5%[ pulsedurationislessthanorequalto1%s,thenQ 0,&\ isthetotalacceleratedchargeinCoulombs.Ifthe ( acceleratorbeampulsedurationisgreaterthan1  %s,thenQisthemaximumacceleratedchargein  1%s.Qequalstheintergralofiwithrespecttot, y overthelesserof1%sorthetimedurationofthe t L beampulse G  (Q=(idt),whereiisbeamcurrentinamperes   andtistimeinseconds.     (2) Peakpower=(peakpotentialinvolts)  k  x(peakbeamcurrentinamperes). f>    (3)Inmachinesbasedonmicrowave    acceleratingcavities,thetimedurationofthe   beampulseisthelesserof1%sorthedurationof   thebunchedbeampacketresultingfromone ]  microwavemodulatorpulse. X0    (4)Inmachinesbasedonmicrowave  acceleratingcavities,thepeakbeamcurrentisthe  averagecurrentinthetimedurationofabunched | beampacket. wO  % Y 3A225Frequencychangers(alsoknownas  convertersorinverters)orgenerators,other  thanthosedescribedin0B001.c.11,havingall x ofthefollowingcharacteristics(seeListof wO ItemsControlled).  N& %Y- LicenseRequirements     ReasonforControl:NP,AT  |      Control(s) 4  `      CountryChart  ## NPappliestoentireentry   NPColumn1 $% ATappliestoentireentry   ATColumn1 o&G '  LicenseExceptions  (!)   LVS: 4 N/A  )#+   GBS: 4 N/A  *o$,   CIV: 4 N/A k+C%-  ?,&.  ListofItemsControlled  (.  D Unit:Number 0 0 D RelatedControls:(1)SeeECCNs4?roN!!O  5  3E00162!O(2  7 .#V2 1 ( developmentand production)and4@roM!!O  5  3E20163!O3  7 -#F3 { S2 ( use)fortechnologyforitemscontrolled O '3 underthisentry.(2)Frequencychangers(also # 4 knownasconvertersorinverters)specially  5 designedorpreparedforuseinseparating  6 uraniumisotopesaresubjecttotheexport  w7 licensingauthorityoftheNuclearRegulatory sK8 Commission(see10CFRpart110).G 9D(#D(#  D RelatedDefinitions:N/A  :  D Items:  ; a.Amultiphaseoutputcapableofprovidinga o = powerof40Wormore; kC > b.Capableofoperatinginthefrequencyrange @ between600and2000Hz; A c.Totalharmonicdistortionbelow10%;and gC d.Frequencycontrolbetterthan0.1%. 7E  D % G 3A226Highpowerdirectcurrentpower H supplies,otherthanthosedescribedin eI 0B001.j.6,havingbothofthefollowing d<J characteristics(seeListofItemsControlled).  ;K %Gq7 LicenseRequirements  M  D ReasonforControl:NP,AT !iO Control(s)         L  x CountryChart 9#Q  D NPappliestoentireentry L  x NPColumn1 $S ATappliestoentireentry L  x ATColumn1 &` U  LicenseExceptions  0("W  D LVS:  N/A   )#Y  D GBS:  N/A   *$Z  D CIV:  N/A +\%[  X,0&\  ListofItemsControlled  (   Unit:$value  0  RelatedControls:(1)SeeECCNs42ip!O  5  3E0016;!O;N/A  7  <  ( developmentand production)and4A !O  5  3E2016<!O<N/A  7 < { S ( use)fortechnologyforitemscontrolled O ' underthisentry.(2)AlsoseeECCN4C !O  5  3A2276=!O=N/A  7 $>. #  (3)Directcurrentpowersuppliesspecially   designedorpreparedforuseinseparating   uraniumisotopesaresubjecttotheexport  w  licensingauthorityoftheNuclearRegulatory sK  Commission(see10CFRpart110).G    RelatedDefinitions:N/A     Items:   a.Capableofcontinuouslyproducing,overatime o  periodof8hours,100Vorgreaterwithcurrent kC  outputof500Aorgreater;and ? b.Currentorvoltagestabilitybetterthan0.1%  overatimeperiodof8hours.   % B 3A227Highvoltagedirectcurrentpower  supplies,otherthanthosedescribedin  0B001.j.5,havingbothofthefollowing k characteristics(seeListofItemsControlled).  jB %BA LicenseRequirements     ReasonforControl:NP,AT    Control(s) 4  `      CountryChart h"@"   NPappliestoentireentry   NPColumn1 $$ ATappliestoentireentry   ATColumn1 %&  LicenseExceptions  _'7!(   LVS: 4 N/A   )"*   GBS: 4 N/A  )#+   CIV: 4 N/A *$,  ListofItemsControlled  Z,2&. Ї D Unit:$value (. 0 D RelatedControls:(1)SeeECCNs4D N!!O  5  3E0016E!OEN/A  7 .#F / ( developmentand production)and4F M!!O  5  3E2016F!OFN/A  7 -# G 0 ( use)fortechnologyforitemscontrolled |1 underthisentry.(2)AlsoseeECCN4Hip!!O  5  3A2266G!OHN/A  7 "6H. x P2 (3)Directcurrentpowersuppliesspecially L $3 designedorpreparedforuseinseparating  4 uraniumisotopesaresubjecttotheexport  5 licensingauthorityoftheNuclearRegulatory  6 Commission(see10CFRpart110). t7D(#D(#  D RelatedDefinitions:N/A pH8  D Items: D 9 a.Capableofcontinuouslyproducing,overatime  ; periodof8hours,20kVorgreaterwithcurrent  < outputof1Aorgreater;and l = b.Currentorvoltagestabilitybetterthan0.1% <? overatimeperiodof8hours. @  3A228Switchingdevices,asfollows(seeListof :E ItemsControlled).  F  LicenseRequirements  H  D ReasonforControl:NP,AT g?J Control(s)         L  x CountryChart L  D NPappliestoentireentry L  x NPColumn1  N ATappliestoentireentry L  x ATColumn1 ^"6P  LicenseExceptions  $R  D LVS:  N/A   %T  D GBS:  N/A   &] U  D CIV:  N/A Y'1!V  ListofItemsControlled  )"X  D Unit:Number *$Z 0 D RelatedControls:(1)SeeECCNs4I !O  5  3E0016>O!ORO  7 O +X%[ ( developmentand production)and4J !O  5  3E2016.P!OBP  7 pP T,,&\D(#D(# ( use)fortechnologyforitemscontrolled ( underthisentry.(2)AlsoseeECCN  4L !O  5  3A991.k6wQ!OQ  7 XQ.   RelatedDefinitions:N/A |   Items: x P a.Cold-cathodetubes,whethergasfilledornot,   operatingsimilarlytoasparkgap,havingallof   thefollowingcharacteristics:     a.1.Containingthreeormoreelectrodes; pH    a.2.Anodepeakvoltageratingof2.5kVor   more;     a.3.Anodepeakcurrentratingof100Aor l  more;and h@    a.4.Anodedelaytimeof10microsecondor  less.    TechnicalNote: 3A228.aincludesgaskrytron d tubesandvacuumsprytrontubes. `8 b.Triggeredspark-gapshavingbothofthe  followingcharacteristics:    b.1.Ananodedelaytimeof15%sorless;and [   b.2.Ratedforapeakcurrentof500Aor + more.  c.Modulesorassemblieswithafastswitching    functionhavingallofthefollowing {!S! characteristics: O"'"   c.1.Anodepeakvoltageratinggreaterthan #$ 2kV; $%   c.2.Anodepeakcurrentratingof500Aor s&K ' more;and G'!(   c.3.Turn-ontimeof1%sorless. ("*  ?,&.  3A229Firingsetsandequivalenthigh-current (. pulsegenerators(fordetonatorscontrolledby / 3A232),asfollows(seeListofItems 0 Controlled).  1  LicenseRequirements  X 03  D ReasonforControl:NP,AT  5 Control(s)         L  x CountryChart  7 NPappliestoentireentry L  x NPColumn1 R* 9 ATappliestoentireentry L  x ATColumn1  ;  LicenseExceptions  z =  D LVS:  N/A   N&?  D GBS:  N/A   "@  D CIV:  N/A A  D  p       ListofItemsControlled  L$E  D Unit:Number G 0 D RelatedControls:(1)SeeECCNs4$ !O  5  3E0016\!O\  7 ]Ԁand H 1E001( developmentand production)and wI 4' !O  5  3E2016]!O]  7 +^Ԁand1E201( use)fortechnologyfor sKJ itemscontrolledunderthisentry.(2)High GK explosivesandrelatedequipmentformilitary L usearesubjecttotheexportlicensing M authorityoftheU.S.DepartmentofState,  N DirectorateofDefenseTradeControls(see22 !oO CFRpart121).k"CPD(#D(# 0 D RelatedDefinitions:In3A229.b.5, risetime ?#Q isdefinedasthetimeintervalfrom10%to $R 90%currentamplitudewhendrivinga $S resistiveload.%TD(#D(# 0 D ECCNControls:3A229.bincludesxenon &g U flashlampdrivers.c';!VD(#D(#  D Items: 7("W a.Explosivedetonatorfiringsetsdesignedto )#Y drivemultiplecontrolleddetonatorscontrolledby *$Z 3A232; +_%[  [,3&\ b.Modularelectricalpulsegenerators(pulsers) ( havingallofthefollowingcharacteristics:    b.1.Designedforportable,mobile,or | ruggedizeduse; x P   b.2.Enclosedinadusttightenclosure;     b.3.Capableofdeliveringtheirenergyinless   than15%s;  t    b.4.Havinganoutputgreaterthan100A; D    b.5.Havinga risetimeoflessthan10%s   intoloadsoflessthan40ohms;     b.6.Nodimensiongreaterthan254mm; h@    b.7.Weightlessthan25kg;and    b.8.Specifiedforuseoveranextended  temperaturerange223K(50$C)to373K d (100$C)orspecifiedassuitableforaerospace `8 applications. 4   3A230Highspeedpulsegeneratorshaving  bothofthefollowingcharacteristics(seeListof _ ItemsControlled).  ^6  LicenseRequirements      ReasonforControl:NP,AT    Control(s) 4  `      CountryChart \"4"   NPappliestoentireentry   NPColumn1 $$ ATappliestoentireentry   ATColumn1 %&  LicenseExceptions  S'+!(   LVS: 4 N/A  ("*   GBS: 4 N/A  )#+   CIV: 4 N/A *$,  ListofItemsControlled  O,'&. Ї D Unit:Number (. 0 D RelatedControls:SeeECCNs4O L!!O  5  3E0016j!Oj  7 ,#j / ( developmentand production)and4P M!!O  5  3E2016k!Ok  7 -#k 0 ( use)fortechnologyforitemscontrolled |1 underthisentry.x P2D(#D(# 0 D RelatedDefinitions:In3A230.b, pulse L $3 transitiontimeisdefinedasthetimeinterval  4 between10%and90%voltageamplitude. 5D(#D(#  D Items:  6 a.Outputvoltagegreaterthan6Vintoaresistive pH8 loadoflessthan55ohms;and D 9 b. Pulsetransitiontimelessthan500ps.  ;  D  p   3A231Neutrongeneratorsystems,including kC > tubes,havingbothofthefollowing B? characteristics(seeListofItemsControlled).  @  LicenseRequirements  B  D ReasonforControl:NP,AT    oGD Control(s)         L  x CountryChart F  D NPappliestoentireentry L  x NPColumn1 H ATappliestoentireentry L  x ATColumn1 f>J  LicenseExceptions  L  D LVS:  N/A  N  D GBS:  N/A   !eO  D CIV:  N/A a"9P  ListofItemsControlled   $R 0 D Unit:Number;partsandaccessoriesin$ %T value&` UD(#D(# 0 D RelatedControls:SeeECCNs4Q !O  5  3E0016r!Os   77/s \'4!V ( developmentand production)and4R7!O  5  3E2016s!Os   77t 0("W ( use)fortechnologyforitemscontrolled )"X underthisentry.)#YD(#D(#  D RelatedDefinitions:N/A *$Z  D Items: +X%[  T,,&\ a.Designedforoperationwithoutanexternal ( vacuumsystem;and  b.Utilizingelectrostaticaccelerationtoinducea | tritiumdeuteriumnuclearreaction. x P      4  `    3A232Detonatorsandmultipointinitiation   systems,asfollows(seeListofItems   Controlled).   z   LicenseRequirements  M%    ReasonforControl:NP,AT   Control(s) 4  `      CountryChart x    NPappliestoentireentry   NPColumn1 G ATappliestoentireentry   ATColumn1   LicenseExceptions  o   LVS: 4 N/A  B   GBS: 4 N/A     CIV: 4 N/A   ListofItemsControlled  j   Unit:Number = 0  RelatedControls:(1)See1A007for  electricallydrivenexplosivedetonators.O9 XN 9Ԁ(2)  SeeECCNsN#9  {#N 9O#Xz#OX47!O  5  3E0016{!O{   77v|O#X{#OXN#9 o{#N 9Ԁ( developmentand     production)and47!O  5  3E2016D}!OX}   77}N#9 |#N 9O#X|#OXԀ( use)for !! technologyforitemscontrolledunderthis "" entry.(3)Highexplosivesandrelated ## equipmentformilitaryusearesubjecttothe $$ exportlicensingauthorityoftheU.S. %r% DepartmentofState,DirectorateofDefense &c & TradeControls(see22CFRpart121).|'T!' N#9 ~#O#X 9S~#  RelatedDefinitions:N/A m(E"( 0  ECCNControls:Thisentrydoesnotcontrol A)#) detonatorsusingonlyprimaryexplosives, *#* suchasleadazide.*$+   Items: +%,  ,i&- a.[RESERVED] (- b.Arrangementsusingsingleormultiple / detonatorsdesignedtonearlysimultaneously |0 initiateanexplosivesurfaceoveranareagreater x P1 than5,000mm2fromasinglefiringsignalwithan L $2 initiationtimingspreadoverthesurfaceofless  3 than2.5%s.  4  D TechnicalNote: 󀀀Thewordinitiatoris  t6 sometimesusedinplaceoftheworddetonator. pH7  D  p % [ 3A233Massspectrometers,otherthanthose  : describedin0B002.g,capableofmeasuring  ; ionsof230atomicmassunitsorgreaterand q < havingaresolutionofbetterthan2partsin pH = 230,andionsourcestherefor.  G> %[ LicenseRequirements  @  D ReasonforControl:NP,AT uB Control(s)         L  x CountryChart E  D NPappliestoentireentry L  x NPColumn1 G ATappliestoentireentry L  x ATColumn1 h@I  LicenseExceptions K   D LVS:  N/A    M  D GBS:  N/A   !gN  D CIV:  N/A c";O  ListofItemsControlled   $Q  D Unit:Number %S 0 D RelatedControls:(1)SeeECCNs4U7!O  5  3E0016~!O   77 &b T ( developmentand production)and4V7!O  5  3E2016n!O   77 ^'6!U ( use)fortechnologyforitemscontrolled 2( "V underthisentry.(2)Massspectrometers )"W speciallydesignedorpreparedforanalyzing )#X onlinesamplesofUF6gasstreamsaresubject *$Y totheexportlicensingauthorityofthe +Z%Z NuclearRegulatoryCommission(see10CFR V,.&[D(#D(# part110).(   RelatedDefinitions:N/A    Items:  a.Inductivelycoupledplasmamassspectrometers x P (ICP/MS); L $ b.Glowdischargemassspectrometers(GDMS);   c.Thermalionizationmassspectrometers  t  (TIMS); pH  d.Electronbombardmentmassspectrometersthat   haveasourcechamberconstructedfrom,lined   withorplatedwithmaterialsresistanttoUF6;   e.Molecularbeammassspectrometershaving h@  eitherofthefollowingcharacteristics: <   e.1.Asourcechamberconstructedfrom,lined  withorplatedwithstainlesssteelormolybdenum  andequippedwithacoldtrapcapableofcooling d to193K(80$C)orless;or `8   e.2.Asourcechamberconstructedfrom,lined  withorplatedwithmaterialsresistanttoUF6;  f.Massspectrometersequippedwitha \ microfluorinationionsourcedesignedfor X0 actinidesoractinidefluorides. ,   % / 3A292Oscilloscopesandtransientrecorders    otherthanthosecontrolledby3A002.a.5,and !Z! speciallydesignedcomponentstherefor.  Y"1" %/ LicenseRequirements  $$   ReasonforControl:NP,AT %& Control(s) 4  `      CountryChart W'/!(   NPappliestoentireentry   NPColumn2 ("* ATappliestoentireentry   ATColumn1 *~$,  LicenseExceptions  N,&&. Ї D LVS:  N/A   (.  D GBS:  N/A   /  D CIV:  N/A 0  ListofItemsControlled  x P2  D Unit:Number # 4 0 D RelatedControls:SeeECCN4X !O  5  3E2926!O2   7 `  5 ( development, production,and use)for  6 technologyforitemscontrolledunderthis  w7 entry.sK8D(#D(# 0 D RelatedDefinitions:"Bandwidth"isdefined G 9 asthebandoffrequenciesoverwhichthe  : deflectiononthecathoderaytubedoesnot  ; fallbelow70.7%ofthatatthemaximum  < pointmeasuredwithaconstantinputvoltage o = totheoscilloscopeamplifier.kC >D(#D(#  D Items: ?? a.Non-modularanalogoscilloscopeshavinga A bandwidthof1GHzorgreater; B b.Modularanalogoscilloscopesystemshaving c;D eitherofthefollowingcharacteristics: 7E  D b.1.Amainframewithabandwidthof1GHz G orgreater;or H  D b.2.Plug-inmoduleswithanindividual [3J bandwidthof4GHzorgreater; /K c.Analogsamplingoscilloscopesfortheanalysis M ofrecurringphenomenawithaneffective  N bandwidthgreaterthan4GHz; !WO d.Digitaloscilloscopesandtransientrecorders, '#Q usinganalog-to-digitalconversiontechniques, #R capableofstoringtransientsbysequentially $S samplingsingle-shotinputsatsuccessiveintervals %{T oflessthan1ns(greaterthan1giga-sampleper w&O U second),digitizingto8bitsorgreaterresolution K'#!V andstoring256ormoresamples. (!W  D Note: Speciallydesignedcomponents )#Y controlledbythisitemarethefollowing,for *s$Z analogoscilloscopes: n+F%[  A,&\   1.Plug-inunits; (   2.Externalamplifiers;    3.Pre-amplifiers; t L   4.Samplingdevices;     5.Cathoderaytubes.    3A980Voiceprintidentificationandanalysis ;  equipmentandparts,n.e.s.     LicenseRequirements      ReasonforControl:CC h@  Control(s) 4  `      CountryChart    CCappliestoentireentry   CCColumn1   LicenseExceptions  _7   LVS: 4 N/A      GBS: 4 N/A     CIV: 4 N/A   ListofItemsControlled      Unit:Equipmentinnumber      RelatedControls:N/A !`!   RelatedDefinitions:N/A \"4"   Items: 0## Thelistofitemscontrollediscontainedinthe $% ECCNheading. %&  3A981Polygraphs(exceptbiomedical ((") recordersdesignedforuseinmedicalfacilities ("* formonitoringbiologicalandneurophysical )#+ responses);fingerprintanalyzers,camerasand *$, equipment,n.e.s.;automatedfingerprintand +\%- identificationretrievalsystems,n.e.s.; [,3&. psychologicalstressanalysisequipment; (. electronicmonitoringrestraintdevices;and / speciallydesignedpartsandaccessories,n.e.s.  0  LicenseRequirements   Y2  D ReasonforControl:CC , 4 Control(s)         L  x CountryChart  6 CCappliestoentireentry L  x CCColumn1  7  LicenseExceptions  O' 9  D LVS:  N/A    ;  D GBS:  N/A    <  D CIV:  N/A { =  ListofItemsControlled  K#?  D Unit:Equipmentinnumber A  D RelatedControls:N/A B  D RelatedDefinitions:N/A vC  D Items: rJD Thelistofitemscontrollediscontainedinthe F ECCNheading. G  % * 3A991Electronicdevicesandcomponentsnot AK controlledby3A001.  L %*ܨ LicenseRequirements   N &%%& D ReasonforControl:AT n"FP Control(s)         L  x CountryChart $R  D ATappliestoentireentry L 0 x ATColumn1%Tx(#x(#  #&%%&›#&%%&LicenseRequirementsNotes:  e'=!V See744.17oftheEARforadditionallicense )"X requirementsforcommoditiesclassifiedas )#Y 3A991.a.1.#&%%&#&%%&  *$Z LicenseExceptions  c,;&\ Ї  LVS: 4 N/A  (   GBS: 4 N/A     CIV: 4 N/A  #&%%&# ListofItemsControlled  x P   Unit:Equipmentinnumber #    RelatedControls:N/A     RelatedDefinitions:N/A     Items:  w  a. Microprocessormicrocircuits, G   microcomputermicrocircuits,and   microcontrollermicrocircuitshavinganyofthe   following:     a.1. 4 a.1.Aperformancespeedof5 kC  GFLOPSormoreandanarithmeticlogicunitwith ? anaccesswidthof32bitormore;    a.2.Aclockfrequencyrateexceeding25  MHz;or g   a.3.Morethanonef  g f  g dataf  g Ԁorinstructionbusor 7 serialcommunicationportthatprovidesadirect   externalinterconnectionbetweenparallel   microprocessormicrocircuitswithatransferrate  of2.5Mbyte/s. _ b.Storageintegratedcircuits,asfollows:   /   b.1.Electricalerasableprogrammable  read-onlymemories(EEPROMs)withastorage    capacity; !W!     b.1.a.Exceeding16Mbitsperpackage '## forflashmemorytypes;or  #$     b.1.b.Exceedingeitherofthefollowing %{& limitsforallotherEEPROMtypes: w&O '      4 b.1.b.1.Exceeding1Mbitper (!) package;or ("*      4 b.1.b.2.Exceeding256kbitper *s$, packageandamaximumaccesstimeoflessthan o+G%- 80ns; C,&. Ї D b.2.Staticrandomaccessmemories(SRAMs) (. withastoragecapacity: /  D  p b.2.a.Exceeding1Mbitperpackage;or |1  D  p b.2.b.Exceeding256kbitperpackage L $3 andamaximumaccesstimeoflessthan25ns;  4 c.Analog-to-digitalconvertershavinganyofthe  6 following:  t7  D c.1.Aresolutionof8bitormore,butless D 9 than12bit,withanoutputrategreaterthan100  : millionwordspersecond;  ;  D c.2.Aresolutionof12bitwithanoutputrate h@ > greaterthan5millionwordspersecond; <?  D c.3.Aresolutionofmorethan12bitbut A equaltoorlessthan14bitwithanoutputrate B greaterthan500thousandwordspersecond;or dC  D c.4.Aresolutionofmorethan14bitwithan 4 E outputrategreaterthan500thousandwordsper F second. G d.Fieldprogrammablelogicdeviceshavingeither \I ofthefollowing: X0J  D d.1.Anequivalentgatecountofmorethan L 5000(2inputgates);or M  D d.2.Atogglefrequencyexceeding100MHz; |!TO e.FastFourierTransform(FFT)processors $#Q havingaratedexecutiontimefora1,024point #R complexFFToflessthan1ms. $S f.Customintegratedcircuitsforwhicheitherthe t&L U functionisunknown,orthecontrolstatusofthe H' !V equipmentinwhichtheintegratedcircuitswillbe (!W usedisunknowntothemanufacturer,havingany ("X ofthefollowing: )#Y  D f.1.Morethan144terminals;or l+D%[  @,&\  +        f.2.Atypical basicpropagationdelaytime ' oflessthan0.4ns.  g.Travelingwavetubes,pulsedorcontinuous | wave,asfollows: w P   g.1.Coupledcavitytubes,orderivatives   thereof;     g.2.Helixtubes,orderivativesthereof,with  t  anyofthefollowing: oH      g.2.a.An instantaneousbandwidthof   halfanoctaveormore;and       g.2.b.Theproductoftheratedaverage l  outputpower(expressedinkW)andthemaximum g@  operatingfrequency(expressedinGHz)ofmore ; than0.2;      g.2.c.An instantaneousbandwidthof  lessthanhalfanoctave;and d     g.2.d.Theproductoftheratedaverage 3  outputpower(expressedinkW)andthemaximum  operatingfrequency(expressedinGHz)ofmore  than0.4;  h.Flexiblewaveguidesdesignedforuseat W0 frequenciesexceeding40GHz; + i.Surfaceacousticwaveandsurfaceskimming  (shallowbulk)acousticwavedevices(i.e., signal    processingdevicesemployingelasticwavesin {!T! materials),havingeitherofthefollowing: O"("   i.1.Acarrierfrequencyexceeding1GHz;or #$   i.2.Acarrierfrequencyof1GHzorless;and %x&     i.2.a.Afrequencyside-loberejection G' !( exceeding55Db; (!)     i.2.b.Aproductofthemaximumdelay )#+ timeandbandwidth(timeinmicrosecondsand *p$, bandwidthinMHz)ofmorethan100;or k+D%-  ?,&.  D  p i.2.c.Adispersivedelayofmorethan10 '. microseconds. / j.Cellsasfollows: |1  D j.1.Primarycellshavinganenergydensityof K $3 550Wh/kgorlessat293K(20C);  4  D j.2.Secondarycellshavinganenergydensity  6 of250Wh/kgorlessat293K(20C).  t7   D &%%&Note:   3A991.j.doesnotcontrolbatteries, C 9 includingsinglecellbatteries.#&%%&&#NXXOX  : N#9 #N 9O#X#OX  D TechnicalNotes:   <  D 1.  p Forthepurposeof3A991.jenergydensity  = (Wh/kg)iscalculatedfromthenominalvoltage ` > multipliedbythenominalcapacityin Z3? ampere-hoursdividedbythemassinkilograms.If -@ thenominalcapacityisnotstated,energydensity A iscalculatedfromthenominalvoltagesquared B thenmultipliedbythedischargedurationinhours C dividedbythedischargeloadinOhmsandthe yRD massinkilograms. L%E  D 2.  p Forthepurposeof3A991.j,a'cell'is F definedasanelectrochemicaldevice,whichhas G positiveandnegativeelectrodes,andelectrolyte, H andisasourceofelectricalenergy.Itisthebasic rI buildingblockofabattery. lEJ  D 3.  p Forthepurposeof3A991.j.1,aprimary ?K cellisacellthatisnotdesignedtobecharged L byanyothersource. M  D 4.  p Forthepurposeof3A991.j.2.,a  N secondarycellisacellthatisdesignedtobe !fO chargedbyanexternalelectricalsource.O#X#N#XXT# `"9P % K k. Superconductiveelectromagnetsorsolenoids $R speciallydesignedtobefullychargedor $S dischargedinlessthanoneminute,havingallof %T thefollowing: &\ U %K D Note: 3A991.kdoesnotcontrol +("W  superconductiveelectromagnetsorsolenoids ("X designedforMagneticResonanceImaging(MRI) )#Y medicalequipment. *~$Z  D k.1.Maximumenergydeliveredduringthe L,%&\ dischargedividedbythedurationofthedischarge ' ofmorethan500kJperminute;    k.2.Innerdiameterofthecurrentcarrying | windingsofmorethan250mm;and w P   k.3.Ratedforamagneticinductionofmore   than8Tor overallcurrentdensityinthewinding   ofmorethan300A/mm2.   l.Circuitsorsystemsforelectromagneticenergy oH  storage,containingcomponentsmanufactured C  from superconductivematerialsspecially   designedforoperationattemperaturesbelowthe    criticaltemperatureofatleastoneoftheir    superconductiveconstituents,havingallofthe l  following: g@    l.1.Resonantoperatingfrequenciesexceeding  1MHz;    l.2.Astoredenergydensityof1MJ/M3or d more;and _8   l.3.Adischargetimeoflessthan1ms;  m.Hydrogen/hydrogen-isotopethyratronsof  ceramic-metalconstructionandrateforapeak \ currentof500Aormore; W0 n.Digitalintegratedcircuitsbasedonany  compoundsemiconductorhavinganequivalent  gatecountofmorethan300(2inputgates).    &%%&o.Solarcells,cell-interconnect-coverglass O"(" (CIC)assemblies,solarpanels,andsolararrays, ### whichare spacequalifiedandnotcontrolledby #$ 3A001.e.4.#&%%&\# $%      4  `  % 0 3A992Generalpurposeelectronicequipment G' !( notcontrolledby3A002.  (!) %0 LicenseRequirements  )#+ &%%&  ReasonforControl:AT t+M%-  H,!&. Control(s)         L  x CountryChart '.  D ATappliestoentireentry L 0 x ATColumn1#&%%&•#&%%&X7X%&0x(#x(# #X7XXX7##&%XX7#&%%& LicenseExceptions  v O2  D LVS:  $1000forSyriafor.aonly  " 4  D GBS:  N/A    5  D CIV:  N/A  6  ListofItemsControlled  rK8  D Unit:Equipmentinnumber  :  D RelatedControls:N/A  ;  D RelatedDefinitions:N/A  <  D Items: r = % z a.Electronictestequipment,n.e.s.%z A? b.Digitalinstrumentationmagnetictapedata A recordershavinganyofthefollowinganyofthe B followingcharacteristics; jC  D b.1.Amaximumdigitalinterfacetransferrate 9E exceeding60Mbit/sandemployinghelicalscan  F techniques; G  D b.2.Amaximumdigitalinterfacetransferrate bI exceeding120Mbit/sandemployingfixedhead ]6J techniques;or 1 K  D b.3."Spacequalified"; M c.Equipment,withamaximumdigitalinterface !ZO transferrateexceeding60Mbit/s,designedto U".P convertdigitalvideomagnetictaperecordersfor )#Q useasdigitalinstrumentationdatarecorders; #R #&%%&“# 3A999Specificprocessingequipment,n.e.s.,as y&R U follows(seeListofItemsControlled). P')!V  LicenseRequirements  ("X  D ReasonforControl:AT *$Z Control(s)         L CountryChart N,'&\ ATappliestoentireentry.Alicenseisrequired  foritemscontrolledbythisentrytoNorthKorea  forantiterrorismreasons.TheCommerce | CountryChartisnotdesignedtodetermineAT w P licensingrequirementsforthisentry.See742.19 K $ oftheEARforadditionalinformation.    LicenseExceptions      LVS: 4 N/A rK    GBS: 4 N/A F    CIV: 4 N/A    ListofItemsControlled      Unit:$value mF  0  RelatedControls:&%%&Seealso#&%%&#Ԁ&%%&0B002,4Z1 !O  5  3A2256!O2.d.  7!Ԁ(for A frequencychangescapableofoperatinginthe  frequencyrangeof600Hzandabove),#&%%&[#&%%&Ԁ4\8!!O  5  3A2336!O  7an,#1#&%%&#   RelatedDefinitions:N/A    Items: j   G&%%&% x a.#&%%&d#Frequencychangerscapableofoperatinginthe 9 frequencyrangefrom300upto600Hz,n.e.s;%x   b.Massspectrometersn.e.s;  c.Allflashxraymachines,andcomponentsof ]6 pulsedpowersystemsdesignedthereof,including 1  Marxgenerators,highpowerpulseshaping  networks,highvoltagecapacitors,andtriggers;  d.Pulseamplifiers,n.e.s.; !Z! e.Electronicequipmentfortimedelaygeneration )## ortimeintervalmeasurement,asfollows: #$   e.1.Digitaltimedelaygeneratorswitha %~& resolutionof50nanosecondsorlessovertime y&R ' intervalsof1microsecondorgreater;or M'&!(   e.2.Multichannel(threeormore)ormodular ("* timeintervalmeterandchronometryequipment )#+ withresolutionof50nanosecondsorlessover *v$, timeintervalsof1microsecondorgreater; q+J%-  E,&. &%%&f.Chromatographyandspectrometryanalytical '. instruments#&%%&?#.&%%& /  D   B.TEST,INSPECTIONAND w P2 PRODUCTIONEQUIPMENT  N '3  3B001#&%%&#Equipmentforthemanufacturingof  6 semiconductordevicesormaterials,&%%&Ԁasfollows  }7 (seeListofItemsControlled)#&%%&#Ԁandspecially {T8 designedcomponentsandaccessoriestherefor.&%%&  R+ 9  LicenseRequirements   ;  D ReasonforControl:NS,AT  = Control(s)         L  x CountryChart P)?  D NSappliestoentireentry L  x NSColumn2 A ATappliestoentireentry L  x ATColumn1 xC  D LicenseRequirementNotes :See743.1of G E theEARforreportingrequirementsforexports F underLicenseExceptions. G  LicenseExceptions  tI  D #&%%&#&%%&LVS:0  $500  G K(#(# 0 D GBS:0D(#D(#Yes,except3B001.a.2(metalorganic L chemicalvapordepositionreactors), M a.3(molecularbeamepitaxialgrowth  N equipmentusinggassources),.e !pO (automaticloadingmultichamber k"DP centralwaferhandlingsystemsonlyif ?#Q connectedtoequipmentcontrolledby $R 3B001.a.2,a.3,or.f),and.f $S (lithographyequipment).#&%%&#&%%&%T(#(#  D CIV:0  Yesforequipmentcontrolledby @"  &h U 3B001.a.1.c' (CVD)equipmentasfollows: ;?  D d.1.Equipmentwithcassette-to-cassette A operationandload-locks,anddesignedaccording B tothemanufacturer'sspecificationsoroptimized dC foruseintheproductionofsemiconductordevices _8D withcriticaldimensionsof180nmorless; 3 E  D d.2.Equipmentspeciallydesignedfor G equipmentcontrolledby3B001.e.anddesigned H accordingtothemanufacturer'sspecificationsor \I optimizedforuseintheproductionof W0J semiconductordeviceswithcriticaldimensionsof +K 180nmorless; L e.Automaticloadingmulti-chambercentralwafer  N handlingsystemshavingallofthefollowing: {!TO  D e.1.Interfacesforwaferinputandoutput,to ##Q whichmorethantwopiecesofsemiconductor #R processingequipmentaretobeconnected;and $S  D e.2.Designedtoformanintegratedsystemin s&L U avacuumenvironmentforsequentialmultiple G' !V waferprocessing; (!W  D Note: 3B001.e.doesnotcontrolautomatic )#Y roboticwaferhandlingsystemsnotdesignedto *t$Z operateinavacuumenvironment. n+G%[  A,&\ f.Lithographyequipmentasfollows: '   f.1.Alignandexposestepandrepeat(direct  steponwafer)orstepandscan(scanner) | equipmentforwaferprocessingusing w P photo-opticalorX-raymethodsandhavinganyof K $ thefollowing:       f.1.a.Alightsourcewavelengthshorter   than245nm;or  t      f.1.b.Capableofproducingapatternwith C  a'minimumresolvablefeaturesize'of180nmor   less;     TechnicalNote: The'minimumresolvable l  featuresize'iscalculatedbythefollowing kD  formula: > MRF= c   (anexposurelightsourcewavelengthinnm)x ]6 (Kfactor) 0  l     4  `      -------------------------------------------------------  Ѐ0 4 numericalaperture44 wheretheKfactor=0.45 O( MRF='minimumresolvablefeaturesize'. "     f.2Imprintlithographyequipmentcapableof  productionfeaturesof180nmorless;  v      Note: 3B001.f.2includes: E""      4  `     - 4 Microcontactprintingtools #$     - 4 Hotembossingtools $%     - 4 Nano-imprintlithographytools %k&     - 4 Stepandflashimprintlithography e&> ' (S-FIL)tools 8'!(   f.3.Equipmentspeciallydesignedformask ("* makingorsemiconductordeviceprocessingusing )#+ directwritingmethodsandhavingallofthe *`$, following: [+4%-  /,&.  D  p f.3.a.Usingdeflectedfocusedelectron '. beam,ionbeamor laserbeam;and /  D  p f.3.b.Havinganyofthefollowing: |1  D  p   f.3.b.1.  Aspotsizesmallerthan0.2 K $3 m;  4  D  p   f.3.b.2.  Beingcapableofproducinga  5 patternwithafeaturesizeoflessthan1m;or  6  D  p   f.3.b.3.  Anoverlayaccuracyofbetter oH8 than0.20m(3sigma); C 9 g.Masksandreticles,designedforintegrated  ; circuitscontrolledby3A001;  < h.Multi-layermaskswithaphaseshiftlayer; g@ >  D Note:   3B001.h.doesnotcontrolmulti-layer @ maskswithaphaseshiftlayerdesignedforthe A fabricationofmemorydevicesnotcontrolledby B 3A001. eC i.Imprintlithographytemplatesdesignedfor 3 E integratedcircuitsby3A001.NXXOX F O#X#N#XX##&%%&Y# &%%&3B002Testequipment,speciallydesignedfor \I testingfinishedorunfinishedsemiconductor Z3J devices,asfollows(seeListofItems 1 K Controlled),andspeciallydesignedcomponents L andaccessoriestherefor.#&%%&•#&%%&  M  LicenseRequirements  !cO  D ReasonforControl:NS,AT 5#Q Control(s)         L  x CountryChart $S NSappliestoentireentry L  x NSColumn2 &] U ATappliestoentireentry L  x ATColumn1 ,("W  LicenseExceptions  )#Y  D LVS:  $500   +Y%[  D GBS:  Yes T,-&\   CIV: 4 N/A ' #&%%&# ListofItemsControlled     Unit:Number z S 0  RelatedControls:Seealso4yb6!O  5  3A999.a6X!Olhigh  7or!Ԁand N ' 4`paD!O  5  3B9926 !O1 lity  7pa._ "    RelatedDefinitions:N/A     Items:  w  &%%&a.FortestingS-parametersoftransistordevicesat F  frequenciesexceeding31.8GHz;   b.[RESERVED]   c.Fortestingmicrowaveintegratedcircuits jC  controlledby3A001.b.2.#&%%&T!# > &%%& % ] 3B991Equipmentnotcontrolledby3B001for  themanufactureofelectroniccomponentsand m materials,andspeciallydesignedcomponents kD andaccessoriestherefor. B %]" LicenseRequirements     ReasonforControl:AT q Control(s) 4  `      CountryChart @   ATappliestoentireentry   ATColumn1   LicenseExceptions  !h!   LVS: 4 N/A  ;##   GBS: 4 N/A  $$   CIV: 4 N/A $% #&%%&§"# ListofItemsControlled  &d ' 0  Unit:Equipmentinnumber,andcomponents 6(") andaccessoriesin$value )"*   RelatedControls:N/A )#+ 0  RelatedDefinitions:Sputteringisanoverlay *$, coatingprocesswhereinpositivelycharged +_%- ionsareacceleratedbyanelectricfieldZ,3&. towardsthesurfaceofatarget(coating '. material).Thekineticenergyoftheimpacting / ionsissufficienttocausetargetsurfaceatoms 0 tobereleasedanddepositedonthesubstrate. |1 (Note:Triode,magnetronorradiofrequency w P2 sputteringtoincreaseadhesionofcoatingand K $3 rateofdepositionareordinarymodifications  4 oftheprocess.) 5D(#D(#  D Items:  6 &%%&a.Equipmentspeciallydesignedforthe oH8 manufactureofelectrontubes,opticalelements C 9 andspeciallydesignedcomponentstherefor  : controlledby3A001or3A991;  ; b.Equipmentspeciallydesignedforthe l = manufactureofsemiconductordevices,integrated g@ > circuitsand electronicassemblies,asfollows, ;? andsystemsincorporatingorhavingthe @ characteristicsofsuchequipment: A  D Note: 3B991.balsocontrolsequipmentused dC ormodifiedforuseinthemanufactureofother c<D devices,suchasimagingdevices,electro-optical 6E devices,acoustic-wavedevices.  F  D b.1.Equipmentfortheprocessingof H materialsforthemanufactureofdevicesand ]I componentsasspecifiedintheheadingof X1J 3B991.b,asfollows: ,K  D Note: 3B991doesnotcontrolquartzfurnace M tubes,furnaceliners,paddles,boats(except  N speciallydesignedcagedboats),bubblers, !XO cassettesorcruciblesspeciallydesignedforthe R"+P processingequipmentcontrolledby3B991.b.1. %#Q  D  p b.1.a.Equipmentforproducing $S polycrystallinesiliconandmaterialscontrolledby %yT 3C001; t&M U % b  D  p %b0b.1.b.Equipmentspeciallydesignedfor (!W purifyingorprocessingIII/VandII/VI ("X semiconductormaterialscontrolledby3C001, )#Y 3C002,3C003,3C004,or3C005exceptcrystal *q$Z pullers,forwhichsee3B991.b.1.cbelow;#&%%&=*#&%%& l+E%[  @,&\     b.1.c.Crystalpullersandfurnaces,as ' follows:    Note: 3B991.b.1.cdoesnotcontroldiffusion | andoxidationfurnaces. { T      4 b.1.c.1.Annealingorrecrystallizing "  equipmentotherthanconstanttemperature   furnacesemployinghighratesofenergytransfer   capableofprocessingwafersatarateexceeding  w  0.005m2perminute; rK       4 b.1.c.2. Storedprogramcontrolled   crystalpullershavinganyofthefollowing   characteristics:        4  ` b.1.c.2.a.Rechargeablewithout jC  replacingthecruciblecontainer; >      4  ` b.1.c.2.b.Capableofoperationat  pressuresabove2.5x105Pa;or       4  ` b.1.c.2.c.Capableofpulling b; crystalsofadiameterexceeding100mm; 6     b.1.d. Storedprogramcontrolled  equipmentforepitaxialgrowthhavinganyofthe  followingcharacteristics: _      4 b.1.d.1.Capableofproducinga . siliconlayerwithathicknessuniformtolessthan  2.5%acrossadistanceof200mmormore;       4 b.1.d.2.Capableofproducingalayer ~!W! ofanymaterialotherthansiliconwithathickness R"+" uniformityacrossthewaferofequaltoorbetter &## than3.5%;or #$      4 b.1.d.3.Rotationofindividualwafers %{& duringprocessing; v&O '     b.1.e.Molecularbeamepitaxialgrowth (!) equipment; ("*     b.1.f.Magneticallyenhancedsputtering *s$, equipmentwithspeciallydesignedintegralload n+G%- lockscapableoftransferringwafersinanisolated B,&. vacuumenvironment; '.  D  p b.1.g.Equipmentspeciallydesignedfor 0 ionimplantation,ion-enhancedorphoto-enhanced |1 diffusion,havinganyofthefollowing w P2 characteristics: K $3  D  p   b.1.g.1.Patterningcapability;  5  D  p   b.1.g.2.Beamenergy(accelerating  t7 voltage)exceeding200keV; oH8  D  p   b.1.g.3Optimizedtooperateata  : beamenergy(acceleratingvoltage)oflessthan10  ; keV;or  <  D  p   b.1.g.4.Capableofhighenergy g@ > oxygenimplantintoaheated substrate; ;?  D  p b.1.h. Storedprogramcontrolled A equipmentfortheselectiveremoval(etching)by B meansofanisotropicdrymethods(e.g.,plasma), dC asfollows: _8D  D  p   b.1.h.1.Batchtypeshavingeitherof F thefollowing: G  D  p     b.1.h.1.a.End-pointdetection, \I otherthanopticalemissionspectroscopytypes;or W0J  D  p     b.1.h.1.b.Reactoroperational L (etching)pressureof26.66Paorless; M  D  p   b.1.h.2.Singlewafertypeshaving {!TO anyofthefollowing: O"(P  D  p     b.1.h.2.a.End-pointdetection, #R otherthanopticalemissionspectroscopytypes; $S  D  p     b.1.h.2.b.Reactoroperational s&L U (etching)pressureof26.66Paorless;or G' !V  D  p     b.1.h.2.c.Cassette-to-cassetteand ("X loadlockswaferhandling; )#Y ̀ Notes: 1. Batchtypesreferstomachinesnot k+D%[ speciallydesignedforproductionprocessingof C,&\ singlewafers.Suchmachinescanprocesstwoor ' morewaferssimultaneouslywithcommonprocess  parameters,e.g.,RFpower,temperature,etchgas  species,flowrates. y ̀2. Singlewafertypesreferstomachines F  speciallydesignedforproductionprocessingof   singlewafers.Thesemachinesmayuseautomatic   waferhandlingtechniquestoloadasinglewafer   intotheequipmentforprocessing.Thedefinition  k  includesequipmentthatcanloadandprocess e>  severalwafersbutwheretheetchingparameters, 8  e.g.,RFpowerorendpoint,canbeindependently    determinedforeachindividualwafer.       b.1.i. Chemicalvapordeposition ^  (CVD)equipment,e.g.,plasma-enhancedCVD Y2  (PECVD)orphoto-enhancedCVD,for - semiconductordevicemanufacturing,having  eitherofthefollowingcapabilities,fordeposition  ofoxides,nitrides,metalsorpolysilicon:       4 b.1.i.1. Chemicalvapordeposition Q* equipmentoperatingbelow105Pa;or %      4 b.1.i.2.PECVDequipmentoperating  eitherbelow60Pa(450millitorr)orhaving z automaticcassette-to-cassetteandloadlockwafer uN handling; I"   Note: 3B991.b.1.idoesnotcontrollow  pressure chemicalvapordeposition(LPCVD)  systemsorreactive sputteringequipment.  u      b.1.j.Electronbeamsystemsspecially C"" designedormodifiedformaskmakingor ## semiconductordeviceprocessinghavinganyof #$ thefollowingcharacteristics: $%      4 b.1.j.1.Electrostaticbeamdeflection; g&@ '      4 b.1.j.2.Shaped,non-Gaussianbeam (!) profile; ("*      4 b.1.j.3.Digital-to-analogconversion *d$, rateexceeding3MHz; _+8%-  3, &.  D  p   b.1.j.4.Digital-to-analogconversion '. accuracyexceeding12bit;or /  D  p   b.1.j.5.Target-to-beamposition |1 feedbackcontrolprecisionof1micrometeror w P2 finer; K $3  D Note: 3B991.b.1.jdoesnotcontrolelectron  5 beamdepositionsystemsorgeneralpurpose  6 scanningelectronmicroscopes.  w7  D  p b.1.k.Surfacefinishingequipmentforthe E 9 processingofsemiconductorwafersasfollows:  :  D  p   b.1.k.1.Speciallydesigned  < equipmentforbacksideprocessingofwafers n = thinnerthan100micrometerandthesubsequent iB > separationthereof;or =?  D  p   b.1.k.2.Speciallydesigned A equipmentforachievingasurfaceroughnessof B theactivesurfaceofaprocessedwaferwitha fC two-sigmavalueof2micrometerorless,total a:D indicatorreading(TIR); 5E ̀ D Note: 3B991.b.1.kdoesnotcontrolsingle-side G lappingandpolishingequipmentforwafersurface H finishing. aI  D  p b.1.l.Interconnectionequipmentwhich /K includescommonsingleormultiplevacuum L chambersspeciallydesignedtopermitthe M integrationofanyequipmentcontrolledby3B991  N intoacompletesystem; !XO  D  p b.1.m. Storedprogramcontrolled '#Q equipmentusing lasersfortherepairor #R trimmingof monolithicintegratedcircuitswith $S eitherofthefollowingcharacteristics: %|T  D  p   b.1.m.1.Positioningaccuracyless K'$!V than1micrometer;or (!W  D  p   b.1.m.2.Spotsize(kerfwidth)less )#Y than3micrometer. *t$Z  D b.2.Masks,mask substrates,mask-making C,&\ equipmentandimagetransferequipmentforthe ' manufactureofdevicesandcomponentsas  specifiedintheheadingof3B991,asfollows:    Note: Theterm masksreferstothoseused w P inelectronbeamlithography,X-raylithography, O ( andultravioletlithography,aswellastheusual "  ultravioletandvisiblephoto-lithography.       b.2.a.Finishedmasks,reticlesand  u  designstherefor,except: pI       4 b.2.a.1.Finishedmasksorreticlesfor   theproductionofunembargoedintegratedcircuits;   or        4 b.2.a.2.Masksorreticles,having g@  bothofthefollowingcharacteristics: ;      4  ` b.2.a.2.a.Theirdesignisbased  ongeometriesof2.5micrometerormore;and       4  ` b.2.a.2.b.Thedesigndoesnot _8 includespecialfeaturestoaltertheintendeduse 3  bymeansofproductionequipmentor software;      b.2.b.Mask substratesasfollows:       4 b.2.b.1.Hardsurface(e.g., W0 chromium,silicon,molybdenum)coated +  substrates(e.g.,glass,quartz,sapphire)forthe  preparationofmaskshavingdimensions  exceeding125mmx125mm;or         4 b.2.b.2. Substratesspecially O"(" designedforX-raymasks; ###     b.2.c.Equipment,otherthangeneral $% purposecomputers,speciallydesignedfor %x& computeraideddesign(CAD)ofsemiconductor s&L ' devicesorintegratedcircuits; G' !(     b.2.d.Equipmentormachines,asfollows, ("* formaskorreticlefabrication: )#+      4 b.2.d.1.Photo-opticalstepandrepeat k+D%- camerascapableofproducingarrayslargerthan ?,&. 100mmx100mm,orcapableofproducinga '. singleexposurelargerthan6mmx6mminthe / image(i.e.,focal)plane,orcapableofproducing 0 linewidthsoflessthan2.5micrometerinthe |1 photoresistonthe substrate; w P2  D  p   b.2.d.2.Maskorreticlefabrication  4 equipmentusingionor laserbeamlithography  5 capableofproducinglinewidthsoflessthan2.5  6 micrometer;or  t7  D  p   b.2.d.3.Equipmentorholdersfor C 9 alteringmasksorreticlesoraddingpelliclesto  : removedefects;  ; ̀ D Note: 3B991.b.2.d.1andb.2.d.2donot l = controlmaskfabricationequipmentusing kD > photo-opticalmethodswhichwaseither >? commerciallyavailablebeforethe1stJanuary, @ 1980,orhasaperformancenobetterthansuch A equipment. B  D  p b.2.e. Storedprogramcontrolled ^7D equipmentfortheinspectionofmasks,reticlesor 2 E pellicleswith: F  D  p   b.2.e.1.Aresolutionof0.25 H micrometerorfiner;and [I  D  p   b.2.e.2.Aprecisionof0.75 *K micrometerorfineroveradistanceinoneortwo L coordinatesof63.5mmormore; M  D Note: 3B991.b.2.edoesnotcontrolgeneral z!SO purposescanningelectronmicroscopesexcept R"+P whenspeciallydesignedandinstrumentedfor %#Q automaticpatterninspection. #R  D  p b.2.f.Alignandexposeequipmentfor %xT waferproductionusingphoto-opticalorX-ray s&L U methods,e.g.,lithographyequipment,including G' !V bothprojectionimagetransferequipmentandstep (!W andrepeat(directsteponwafer)orstepandscan ("X (scanner)equipment,capableofperforminganyof )#Y thefollowingfunctions: *p$Z  D Note: 3B991.b.2.fdoesnotcontrol ?,&\ photo-opticalcontactandproximitymaskalign ' andexposeequipmentorcontactimagetransfer  equipment.       4  `      4 b.2.f.1.Productionofapatternsizeof t M lessthan2.5micrometer; H !      4 b.2.f.2.Alignmentwithaprecision   finerthan0.25micrometer(3sigma);        4 b.2.f.3.Machine-to-machineoverlay lE  nobetterthan0.3micrometer;or @       4 b.2.f.4.Alightsourcewavelength   shorterthan400nm;       b.2.g.Electronbeam,ionbeamorX-ray d=  equipmentforprojectionimagetransfercapableof 8 producingpatternslessthan2.5micrometer;     Note: Forfocused,deflected-beamsystems  (directwritesystems),see3B991.b.1.jorb.10. e     b.2.h.Equipmentusing lasersfordirect 3  writeonwaferscapableofproducingpatternsless  than2.5micrometer.    b.3.Equipmentfortheassemblyofintegrated \ circuits,asfollows: W0     b.3.a. Storedprogramcontrolleddie  bondershavingallofthefollowingcharacteristics:       4 b.3.a.1.Speciallydesignedfor {!T!  hybridintegratedcircuits; O"("      4 b.3.a.2.X-Ystagepositioningtravel #$ exceeding37.5x37.5mm;and $%      4 b.3.a.3.Placementaccuracyinthe s&L ' X-Yplaneoffinerthan10micrometer; G' !(     b.3.b. Storedprogramcontrolled ("* equipmentforproducingmultiplebondsina )#+ singleoperation(e.g.,beamleadbonders,chip *p$, carrierbonders,tapebonders); k+D%-  ?,&.  D  p b.3.c.Semi-automaticorautomatichot '. capsealers,inwhichthecapisheatedlocallytoa / highertemperaturethanthebodyofthepackage, 0 speciallydesignedforceramicmicrocircuit |1 packagescontrolledby3A001andthathavea w P2 throughputequaltoormorethanonepackageper K $3 minute.  4  D Note: 3B991.b.3doesnotcontrolgeneral  6 purposeresistancetypespotwelders.  x7  D b.4.Filtersforcleanroomscapableof F 9 providinganairenvironmentof10orless  : particlesof0.3micrometerorsmallerper0.02832  ; m3andfiltermaterialstherefor.#&%%&32#&%%&  < #&%%&'z# % _ 3B992Equipmentnotcontrolledby3B002for >? theinspectionortestingofelectronic @ componentsandmaterials,andspecially A designedcomponentsandaccessoriestherefor.  B %_z LicenseRequirements  nGD  D  p          L  x    D ReasonforControl:AT F Control(s)         L  x CountryChart H ATappliestoentireentry L  x ATColumn1 hAJ  LicenseExceptions  L  D LVS:  N/A    N  D GBS:  N/A   !hO  D CIV:  N/A c"<P  ListofItemsControlled   $R  D Unit:Equipmentinnumber %T  D RelatedControls:Seealso4{!O  5  3A992.a6~!O~Ԁ  7 . &c U  D RelatedDefinitions:N/A ^'7!V  D Items: 2( "W &%%&a.Equipmentspeciallydesignedfortheinspection )#Y ortestingofelectrontubes,opticalelementsand *$Z speciallydesignedcomponentsthereforcontrolled +[%[ by3A001or3A991; V,/&\ Їb.Equipmentspeciallydesignedfortheinspection ' ortestingofsemiconductordevices,integrated  circuitsand"electronicassemblies",asfollows,  andsystemsincorporatingorhavingthe | characteristicsofsuchequipment: w P   Note: 3B992.balsocontrolsequipmentused   ormodifiedforuseintheinspectionortestingof   otherdevices,suchasimagingdevices,   electro-opticaldevices,acoustic-wavedevices.  v    b.1."Storedprogramcontrolled"inspection D  equipmentfortheautomaticdetectionofdefects,   errorsorcontaminantsof0.6micrometerorlessin   oronprocessedwafers,"substrates",otherthan   printedcircuitboardsorchips,usingopticalimage m  acquisitiontechniquesforpatterncomparison; hA    Note: 3B992.b.1doesnotcontrolgeneral  purposescanningelectronmicroscopes,except  whenspeciallydesignedandinstrumentedfor  automaticpatterninspection. g   b.2.Speciallydesigned storedprogram 5 controlledmeasuringandanalysisequipment,as   follows:      b.2.a.Speciallydesignedforthe ^ measurementofoxygenorcarboncontentin Y2 semiconductormaterials; -     b.2.b.Equipmentforlinewidth  measurementwitharesolutionof1micrometeror    finer; }!V!     b.2.c.Speciallydesignedflatness %## measurementinstrumentscapableofmeasuring #$ deviationsfromflatnessof10micrometerorless $% witharesolutionof1micrometerorfiner. %z&   b.3. Storedprogramcontrolledwafer I'"!( probingequipmenthavinganyofthefollowing (!) characteristics: `   ("*     b.3.a.Positioningaccuracyfinerthan3.5 *r$, micrometer; m+F%-  A,&.  D  p b.3.b.Capableoftestingdeviceshaving '. morethan68terminals;or /  D  p b.3.c.Capableoftestingatafrequency |1 exceeding1GHz; w P2  D b.4.Testequipmentasfollows:  4  D  p b.4.a. Storedprogramcontrolled  6 equipmentspeciallydesignedfortestingdiscrete  t7 semiconductordevicesandunencapsulateddice, oH8 capableoftestingatfrequenciesexceeding18 C 9 GHz;  :  D TechnicalNote: Discretesemiconductor  < devicesincludephotocellsandsolarcells. p =  D  p b.4.b. Storedprogramcontrolled >? equipmentspeciallydesignedfortesting @ integratedcircuitsand"electronicassemblies" A thereof,capableoffunctionaltesting: B  D  p   b.4.b.1.Atapatternrateexceeding b;D 20MHz;or 6E  D  p   b.4.b.2.Atapatternrateexceeding G 10MHzbutnotexceeding20MHzandcapableof H testingpackagesofmorethan68terminals. _I  D  D Notes: 󀀀3B992.b.4.bdoesnotcontroltest .K equipmentspeciallydesignedfortesting: L ̀1.Memories;  N  D 2. Assembliesoraclassof"electronic R"+P assemblies"forhomeandentertainment %#Q applications;and #R  D 3.Electroniccomponents,"assemblies"and %wT integratedcircuitsnotcontrolledby3A001or q&J U 3A991providedsuchtestequipmentdoesnot D'!V incorporatecomputingfacilitieswith"user (!W accessibleprogrammability". ("X  D TechnicalNote: Forpurposesof *j$Z 3B992.b.4.b,patternrateisdefinedasthe i+B%[ maximumfrequencyofdigitaloperationofa <,&\ tester.Itisthereforeequivalenttothehighest ' dataratethatatestercanprovidein  non-multiplexedmode.Itisalsoreferredtoas  testspeed,maximumdigitalfrequencyor y maximumdigitalspeed. s L     b.4.c.Equipmentspeciallydesignedfor   determiningtheperformanceoffocal-planearrays   atwavelengthsofmorethan1,200nm,using    storedprogramcontrolledmeasurementsor  o  computeraidedevaluationandhavinganyofthe jC  followingcharacteristics: >       4 b.4.c.1.Usingscanninglightspot   diametersoflessthan0.12mm;        4 b.4.c.2.Designedformeasuring b;  photosensitiveperformanceparametersandfor 6 evaluatingfrequencyresponse,modulation   transferfunction,uniformityofresponsivityor  noise;or       4 b.4.c.3.Designedforevaluating Z3 arrayscapableofcreatingimageswithmorethan . 32x32lineelements;    b.5.Electronbeamtestsystemsdesignedfor  operationat3keVorbelow,or laserbeam ~W systems,fornon-contactiveprobingof R+ powered-upsemiconductordeviceshavinganyof & thefollowing:      b.5.a.Stroboscopiccapabilitywitheither  {  beamblankingordetectorstrobing; v!O!     b.5.b.Anelectronspectrometerfor ## voltagemeasurementswitharesolutionofless #$ than0.5V;or $%     b.5.c.Electricaltestsfixturesfor n&G ' performanceanalysisofintegratedcircuits; B'!(   Note: 3B992.b.5doesnotcontrolscanning ("* electronmicroscopes,exceptwhenspecially )#+ designedandinstrumentedfornon-contactive *n$, probingofapowered-upsemiconductordevice. h+A%-  ;,&.  D b.6. Storedprogramcontrolled '. multifunctionalfocusedionbeamsystems / speciallydesignedformanufacturing,repairing, 0 physicallayoutanalysisandtestingofmasksor |1 semiconductordevicesandhavingeitherofthe w P2 followingcharacteristics: K $3  D  p b.6.a.Target-to-beampositionfeedback  5 controlprecisionof1micrometerorfiner;or  6  D  p b.6.b.Digital-to-analogconversion oH8 accuracyexceeding12bit; C 9  D b.7.Particlemeasuringsystemsemploying  ;  lasersdesignedformeasuringparticlesizeand  < concentrationinairhavingbothofthefollowing l = characteristics: g@ >  D  p b.7.a.Capableofmeasuringparticlesizes @ of0.2micrometerorlessataflowrateof0.02832 A m3perminuteormore;and B  D  p b.7.b.CapableofcharacterizingClass10 _8D cleanairorbetter. 3 E #&%%&#  C.MATERIALS  H  3C001Hetero-epitaxialmaterialsconsistingof 4 K a"substrate"havingstackedepitaxiallygrown  L multiplelayersofanyofthefollowing(seeList M ofItemsControlled).   N  LicenseRequirements  d"=P  D ReasonforControl:NS,AT $R Control(s)         L  x CountryChart %T  D NSappliestoentireentry L  x NSColumn2 ^'7!V ATappliestoentireentry L  x ATColumn1 )"X  LicenseExceptions  *$Z  D LVS:  $3000   Z,3&\   GBS: 4 N/A  '   CIV: 4 N/A   ListofItemsControlled  |   Unit:$value N ' 0  RelatedControls:Thisentrydoesnotcontrol "  equipmentormaterialwhosefunctionalityhas   beenunalterablydisabledarenotcontrolled.  0  RelatedDefinitions:III/Vcompoundsare  w  polycrystallineorbinaryorcomplex rK  monocrystallineproductsconsistingof F  elementsofgroupsIIIAandVAof   Mendeleyev'speriodicclassificationtable   (e.g.,galliumarsenide,gallium-aluminium   arsenide,indiumphosphide).o    Items: jC  a.Silicon;  b.Germanium;  c.SiliconCarbide;or b; d.III/Vcompoundsofgalliumorindium.       3C002Resistmaterialsasfollows(seeListof _ ItemsControlled)and substratescoated ]6 withthefollowingresists.  4   LicenseRequirements     ReasonforControl:NS,AT !c! Control(s) 4  `      CountryChart 2# # NSappliestoentireentry   NSColumn2 $% ATappliestoentireentry   ATColumn1 &Z '  LicenseExceptions  )(")   &%%&LVS:0 4 $3000)#+44 0  GBS:04Yesforpositiveresistsnotoptimized *$, forphotolithographyatawavelength }+V%- oflessthan365nm,providedthatQ,*&.44 theyarenotcontrolledby3C002.b '. through.e./(#(# 0 D CIV:0D(#D(#Yesforpositiveresistsnotoptimized 0 forphotolithographyatawavelength |1 oflessthan365nm,providedthat w P2 theyarenotcontrolledby3C002.b K $3 through.e.#&%%&c#&%%&O9 XN 9 4(#(# #&%%&,#N#9 j#O#X 9K#&%%& ListofItemsControlled   6  D Unit:$value rK8  D RelatedControls:N/A F 9 0 D RelatedDefinitions:Silylationtechniquesare  : definedasprocessesincorporatingoxidation  ; oftheresistsurfacetoenhanceperformance  < forbothwetanddrydeveloping.o =D(#D(#  D Items: jC > #&%%&#a.Positiveresistsdesignedforsemiconductor @ lithographyspeciallyadjusted(optimized)foruse A atwavelengthsbelow245nm;&%%& B b.Allresistsdesignedforusewithelectronbeams b;D orionbeams,withasensitivityof0.01 6E coulomb/mm2orbetter;  F c.AllresistsdesignedforusewithX-rays,witha H sensitivityof2.5mJ/mm2orbetter; _I d.Allresistsoptimizedforsurfaceimaging .K technologies,includingsilylatedresists; L #&%%&#e. p Allresistsdesignedoroptimizedforuse  N withimprintlithographyequipmentspecifiedby ~!WO 3B001.f.2.thatuseeitherathermalor R"+P photo-curableprocess.&%%& &#Q  3C003Organo-inorganiccompounds,as %{T follows(seeListofItemsControlled).  y&R U  LicenseRequirements  $(!W  D ReasonforControl:NS,AT )#Y Control(s)         L  x CountryChart v+O%[  D  I,"&\ NSappliestoentireentry   NSColumn2 ' ATappliestoentireentry   ATColumn1   LicenseExceptions  w P   LVS: 4 $3000  "    GBS: 4 N/A      CIV: 4 N/A    ListofItemsControlled   w    Unit:$value I"  0  RelatedControls:Thisentrycontrolsonly   compoundswhosemetallic,partlymetallicor   nonmetallicelementisdirectlylinkedto   carbonintheorganicpartofthemolecule.r  0  RelatedDefinition:N/AmF    Items: A a.Organo-metalliccompoundsofaluminium,  galliumorindiumhavingapurity(metalbasis)  betterthan99.999%; j b.Organo-arsenic,organo-antimonyand 9 organo-phosphoruscompoundshavingapurity   (inorganicelementbasis)betterthan99.999%.       4 3C004Hydridesofphosphorus,arsenicor ]6 antimony,havingapuritybetterthan99.999%, 4  evendilutedininertgasesorhydrogen.     LicenseRequirements       ReasonforControl:NS,AT a":" Control(s) 4  `      CountryChart  $$   NSappliestoentireentry   NSColumn2 %& ATappliestoentireentry   ATColumn1 X'1!(  LicenseExceptions  )"*   LVS: 4 $3000  *$,   GBS: 4 N/A  +Y%-   CIV: 4 N/A T,-&. Ї ListofItemsControlled  '.  D Unit:$value 0 0 D RelatedControls:#&%%&#N/A&%%&1D(#D(# 0 D RelatedDefinition:N/Az S2D(#D(#  D Items: N '3 Thelistofitemscontrollediscontainedinthe  5 ECCNheading.  6  #&%%&#Note :Thisentrydoesnotcontrolhydrides rK8 containing20%molarormoreofinertgasesor F 9 hydrogen.&%%&  :  #&%%&´#&%%&3C005Siliconcarbide(SiC),galliumnitride @ (GaN),aluminumnitride(AlN)oraluminum A galliumnitride(AlGaN) substrates,oringots, B boules,orotherpreformsofthosematerials, nC havingresistivitiesgreaterthan10,000ohm-cm lED at20C.#&%%&#&%%&  CE  LicenseRequirements  G  D ReasonforControl:NS,AT rI Control(s)         L  x CountryChart AK NSappliestoentireentry L  x NSColumn2 M ATappliestoentireentry L  x ATColumn1 !iO  LicenseExceptions  8#Q  D LVS:  $3000   $R  D GBS:  Yes $S  D CIV:  Yes %T  ListofItemsControlled  _'8!V  D Unit:$value  )"X 0 D RelatedControls:SeeECCN4a !O  5  3E0016!O   7!5Ԁfor )#Y relateddevelopmentandproduction *$Z technology,andECCN4can8!O  5  3B991.b.1.b6!Otire  7o!DԀfor +_%[ relatedproductionequipment. Z,3&\D(#D(#   RelatedDefinition:N/A '   Items:  Thelistofitemscontrollediscontainedinthe { ECCNheading.#&%%&µ#&%%& v O #&%%&# &%%&3C006 4 Substratesspecifiedin3C005   withatleastoneepitaxiallayerofsilicon   carbide,galliumnitride,aluminumnitrideor  y  aluminumgalliumnitride.  wP   LicenseRequirements  "    ReasonforControl:NS,AT   Control(s) 4  `      CountryChart uN  NSappliestoentireentry   NSColumn2d  dATappliestoentireentry   ATColumn1   LicenseExceptions  lE   LVS: 4 $3000  C   GBS: 4 Yes    CIV: 4 Yes   ListofItemsControlled  l   Unit:$value > 0  RelatedControls:SeeECCN4%!O  5  3D0016{!O   7vԀfor  related developmentor production   software,ECCN4+ !O  5  3E0016!O   7rԀforrelated     developmentand production !g!  technology,andECCN4,3. !O  5  3B991.b.1.b6!O  7Ԁfor b";" related productionequipment.6##   RelatedDefinition:N/A  $$   Items: $% Thelistofitemscontrollediscontainedinthe &^ ' ECCNheading.#&%%&G#  Y'2!( 3C992&%%&Positiveresistsdesignedfor )#+ semiconductorlithographyspeciallyadjusted *$, (optimized)foruseatwavelengthsbetween370 +b%- and245nm.#&%%&#  `,9&. Ї LicenseRequirements  '.  D ReasonforControl:AT 0 Control(s)         L  x CountryChart z S2 ATappliestoentireentry L  x ATColumn1 ! 4  LicenseExceptions   6  D LVS:N/A tM8  D GBS:N/A H! 9  D CIV:N/A  :  ListofItemsControlled   <  D Unit:$value oH >  D RelatedControls:N/A C?  D RelatedDefinitions:N/A @  D Items: A Thelistofitemscontrollediscontainedinthe lC ECCNheading.&%%& g@D   D.SOFTWARE  G w % # 3D001"Software"%#Ԁspeciallydesignedforthe b;J "development"or"production"ofequipment 9K controlledby3A001.bto3A002.gor3B(except L 3B991and3B992).  M  LicenseRequirements  !kO  D ReasonforControl:NS,AT =#Q Control(s)         L  x CountryChart $S  D  p NSappliesto"software" L  x NSColumn1 &e U forequipmentcontrolled `'9!V by3A001.bto3A001.f, 4( "W 3A002,and3B )"X ATappliestoentireentry L  x ATColumn1 *$Z  D LicenseRequirementNotes :See743.1of X,1&\ theEARforreportingrequirementsforexports ' underLicenseExceptions.   LicenseExceptions  |   CIV: 4 N/A N ' 0  TSR:04#&%%&A#Yes,exceptfor softwarespecially "  designedforthe developmentor    productionofTravelingWave   TubeAmplifiersdescribedin  w  3A001.b.8havingoperating rK  frequenciesexceeding18GHz.&%%&F 44  ListofItemsControlled      Unit:$value r  0  #&%%&—#-&%%&RelatedControls#&%%-&t#.&%%&: Softwarespecially mF  designedforthe developmentor A  productionofthefollowingequipmentis  undertheexportlicensingauthorityofthe  DepartmentofState,DirectorateofDefense  TradeControls(22CFRpart121):1.)When j operatingatfrequencieshigherthan31.8GHz e> and spacequalified:Helixtubes(traveling 9 wavetubes(TWT))definedin   442.!O  5  3A001.b.1.a.4.c6!O(   7n V;microwavesolidstate  amplifiersdefinedin4NW !O  5  3A001.b.4.b6 !O_  7iaL;and  travelingwavetubeamplifiers(TWTA) b definedin4Sia!O  5  3A001.b.86!O-  7 [;2.) Spacequalified ]6 #&%%.&#&%%&solarcells,coverglassinterconnectcellsor 1  coveredinterconnectcells(CIC)assemblies,  solararrays,and/orsolarpanels,witha  minimumaverageefficiencyof31%or    greateratanoperatingtemperatureof301K !Z! (28C)undersimulated'AM0'illumination U"." withanirradianceof1,367Wattspersquare )## meter(W/m2),andassociatedsolar #$ concentrators,powerconditioners,and/or $% controllers,bearingandpowertransfer %~& assemblies,anddeployment y&R ' hardware/systems.#&%%&#.&%%&O9 XN 9Ԁ3.) Space#&%%.&#1&%%&Ԁ#&%%1&¤#.&%%&qualified M'&!( atomicfrequencystandardsdefinedin C(") 4Tia!O  5  3A002.g.26b!Ov  7.Seealso4fia !O  5  3D1016!O/  7 ].)"* N#9 T#O#X 95##&%%.&#&%%&  #&%%&N#-&%%&RelatedDefinitions#&%%-&£#.&%%&:#&%%.&#.&%%&N/A#&%%.&?#&%%& )#+   Items: *$, Thelistofitemscontrollediscontainedinthe g,@&. ECCNheading. '. @  <  #&%%&„#3D002 Softwarespeciallydesignedforthe |1  useofanyofthefollowing(seeListofItems z S2 Controlled).&%%&  Q *3  LicenseRequirements   5  D ReasonforControl:NS,AT  7 Control(s)         L  x CountryChart O( 9  D NSappliestoentireentry L  x NSColumn1  ; ATappliestoentireentry L  x ATColumn1 w =  LicenseExceptions  F?  D CIV:  N/A A  D TSR:  Yes   B  ListofItemsControlled  nGD  D Unit:$value F #&%%&%#&%%& D RelatedControls:Alsosee4}2!O  5  3D9916!O!  7& . G  D RelatedDefinitions:N/A H  D Items: nI #&%%&5#a. D Equipmentcontrolledby3B001.a.tof.;or =K b. D Equipmentcontrolledby3B002.&%%& M  #&%%&K#3D003&%%&Physics-basedsimulation software a":P speciallydesignedforthe developmentof 8#Q lithographic,etchingordepositionprocesses $R fortranslatingmaskingpatternsintospecific $S topographicalpatternsinconductors, %T dielectricsorsemiconductormaterials.#&%%&­#&%%&  &m U  LicenseRequirements  ?("W  D ReasonforControl:NS,AT )#Y Control(s)         L  x CountryChart +k%[  D  e,>&\ NSappliestoentireentry   NSColumn1 ' ATappliestoentireentry   ATColumn1   LicenseExceptions  w P   CIV: 4 N/A "    TSR: 4 Yes         4  `      #&%%&Y#ListofItemsControlled   w    Unit:$value I"  0  RelatedControls: N/A  0  RelatedDefinitions:1.)Libraries,design   attributesorassociateddataforthedesignof   semiconductordevicesorintegratedcircuits r  areconsideredas technology.2.) mF  Physics-basedin3D003meansusing A computationstodetermineasequenceof  physicalcauseandeffecteventsbasedon  physicalproperties(e.g.,temperature,  pressure,diffusionconstantsand j semiconductormaterialsproperties).e>   Items: 9   Thelistofitemscontrollediscontainedinthe  ECCNheading.   &%%&3D004  Softwarespeciallydesignedforthe   developmentoftheequipmentcontrolledby  3A003.      #&%%&X#LicenseRequirements  a":"   ReasonforControl:NS,AT  $$ Control(s) 4  `      CountryChart %& NSappliestoentireentry   NSColumn1 ['4!( ATappliestoentireentry   ATColumn1 )"*  LicenseExceptions  *$,   CIV: 4 N/A W,0&.  D TSR:  Yes   '.  ListofItemsControlled  0  D Unit:$value z S2  D RelatedControls:N/A N '3  D RelatedDefinitions:N/A " 4  D Items:  5 Thelistofitemscontrollediscontainedinthe  w7 ECCNheading.&%%& rK8 #&%%&# % h 3D101&%%& Softwarespeciallydesignedor  ; modifiedforthe useofequipmentcontrolled  < by3A101.b.#&%%&e#  u = %hR LicenseRequirements  G ?  D ReasonforControl:MT,AT A Control(s)         L  x CountryChart sC  D MTappliestoentireentry L  x MTColumn1 AE ATappliestoentireentry L  x ATColumn1 G  LicenseExceptions  ?K  D CIV:  N/A M  D TSR:  N/A    N  ListofItemsControlled  g"@P  D Unit:$value $R  D RelatedControls:N/A $S  D RelatedDefinitions:N/A %T  D Items: &g U Thelistofitemscontrollediscontainedinthe 6("W ECCNheading.  )"X  3D980 Softwarespeciallydesignedforthe +_%[  development, production,or useof ],6&\ itemscontrolledby3A980and3A981.  '  LicenseRequirements     ReasonforControl:CC,AT  Y Control(s) 4  `      CountryChart (    CCappliestoentireentry   CCColumn1   ATappliestoentireentry   ATColumn1 wP   LicenseExceptions      CIV: 4 N/A     TSR: 4 N/A x    ListofItemsControlled  G    Unit:$value    RelatedControls:N/A    RelatedDefinitions:N/A s   Items: nG Thelistofitemscontrollediscontainedinthe  ECCNheading.   % | 3D991 Softwarespeciallydesignedforthe f?  development, production,or useof = electronicdevicesorcomponentscontrolledby  3A991,generalpurposeelectronicequipment  controlledby3A992,ormanufacturingandtest    equipmentcontrolledby3B991and3B992;or !r!  softwarespeciallydesignedforthe useof p"I" equipmentcontrolledby3B001.gand.h.%|   G# #  LicenseRequirements  $%   ReasonforControl:AT &v ' Control(s) 4  `      CountryChart E(")   ATappliestoentireentry   ATColumn1 )#+  LicenseExceptions  +m%-  l,E&.  D CIV:  N/A '.  D TSR:  N/A   /  ListofItemsControlled  |1  D Unit:$value N '3  D RelatedControls:N/A " 4  D RelatedDefinitions:N/A  5  D Items:  6 Thelistofitemscontrollediscontainedinthe rK8 ECCNheading. F 9  D   E.TECHNOLOGY   <  % 7 3E001 Technologyaccordingtothe A? GeneralTechnologyNoteforthe @  developmentor productionofequipment A ormaterialscontrolledby3A(except3A292, B 3A980,3A981,3A9913A992,or3A999),3B wC (except3B991or3B992)or3C(except3C992).%7  uND  LicenseRequirements   F  D ReasonforControl:NS,MT,NP,AT H Control(s)0  0(#(#0(#(#0 (#(#0L (# (#0xL(#L(#CountryChartsLJx(#x(# NSappliesto technology0 x NSColumn1Lx(#x(# foritemscontrolledby M 3A001,3A002,3B001,  N 3B002,or3C001to3C006 !oO MTappliesto technology L 0 x MTColumn1>#Qx(#x(# forequipmentcontrolledby $R 3A001or3A101forMT $S reasons %T NPappliesto technology0 L 0xL(#L(#NPColumn1b';!Vx(#x(# forequipmentcontrolledby 6("W 3A001,3A201,or3A225to  )"X 3A233forNPreasons )#Y ATappliestoentireentry0 L 0xL(#L(#ATColumn1+_%[x(#x(#  Z,3&\   LicenseRequirementNote: See743.1of ' theEARforreportingrequirementsforexports  underLicenseExceptions.  &%%& LicenseExceptions  { T #&%%&©#&%%&  CIV:N/A '  0  O9 XN 9TSR:#&%%&#&%%&Yes,exceptN/AforMT,and    technologyspeciallydesignedforthe    developmentor productionof:(a)    TravelingWaveTubeAmplifiersdescribedin r  4g !O  5  3A001.b.86!O4  7 5,havingoperatingfrequencies mF  exceeding19Ghz;and(b)solarcells, A  coverglassinterconnectcellsorcovered   interconnectcells(CIC)assemblies,solar   arraysand/orsolarpanels,whichare space   qualified,havingaminimumaverage j  efficiencyexceeding20%butlessthan31% e> describedin4e  !O  5  3A001.e.46X!Ol4  7 .N#9 #O#X 9v##&%%&#&%%&9 #&%%&p# ListofItemsControlled     Unit:N/A e 0  RelatedControls:.&%%&1.)Seealso4i !O  5  3E1016!O   7_`Ԁand `9 3E201.2.)Technologyaccordingtothe 4  GeneralTechnologyNoteforthe   developmentor productionofthe  followingcommoditiesisundertheexport  licensingauthorityoftheDepartmentofState, ] DirectorateofDefenseTradeControls X1 (22CFRpart121):(a)Whenoperatingat , frequencieshigherthan31.8GHzand space#&%%.&_#-&%%&   #&%%-&R"#.&%%&qualified:helixtubes(travelingwavetubes    (TWT))definedin4j !O  5  3A001.b.1.a.4.c6#!O3#   7_a#; !! microwavesolidstateamplifiersdefinedin |"U" 4k !O  5  3A001.b.4.b6)$!O=$   7_n k$;ortravelingwavetube P#)# amplifiers(TWTA)definedin4l !O  5  3A001.b.86#%!O7%   7_e%;(b) $$$  Spacequalified #&%%.&©"#&%%&solarcells,coverglass $% interconnectcellsorcoveredinterconnect %& cells(CIC)assemblies,solararrays,and/or &y ' solarpanels,withaminimumaverage t'M!( efficiencyof31%orgreateratanoperating H(!") temperatureof301K(28C)undersimulated )"* 'AM0'illuminationwithanirradianceof1,367 )#+ Wattspersquaremeter(W/m2)#&%%&0&#&%%&O9 XN 9,and *$, associatedsolarconcentrators,power+%- conditioners,and/orcontrollers,bearingand '- powertransferassemblies,anddeployment . hardware/systems.and#&%%&F(#.&%%&O#Xe(#OXN#9 (#N 9Ԁ(c) Spacequalified  / atomicfrequencystandardsdefinedin 0 4 !O  5  3A002.g.26*!O*ubes  7ve +.N#9 =*#O#X 9)##&%%.&¹)# 1D(#D(#  D -&%%&RelatedDefinition#&%%-&,#.&%%&:#&%%.&h,#O9 XN 9N/AN#9 ,#O#X 9,#  2  D Items:  v3 Thelistofitemscontrollediscontainedinthe E 5 ECCNheading. 6  D  Note1 :3E001doesnotcontrol technologyfor  8 the productionofequipmentorcomponents n 9 controlledby3A003. hA :  D  Note2 :3E001doesnotcontrol technologyfor  < the developmentor productionofintegrated  = circuitscontrolledby3A001.a.3toa.12,having > allofthefollowing:   L  b?  D a) Using technologyof0.5%mormore; \5@ and 0 A  D b) Notincorporatingmultilayerstructures. B    D  p TechnicalNote :Multilayerstructuresin D Note2of3E001donotincludedevices YE incorporatingamaximumofthreemetallayers S,F andthreepolysiliconlayers.&%%&O9 XN 9 x N#9 2#O#X 91##&%%&1#&%%& &G #&%%&¨2# 3E002TechnologyaccordingtotheGeneral {J TechnologyNoteotherthanthatcontrolledin yRK 3E001forthe developmentor production P )L ofa microprocessormicrocircuit, micro '!M computermicrocircuitandmicrocontroller !N microcircuitcore,havinganarithmeticlogic "O unitwithanaccesswidthof32bitsormoreand #P anyofthefollowingfeaturesorcharacteristics $\Q (seeListofItemsControlled).  Z%3R  LicenseRequirements  ' T  D ReasonforControl:NS,AT ("V Control(s)         L 0 x CountryChartX*1$Xx(#x(#  D NSappliestoentireentry L  x NSColumn1 +%Z ЇATappliestoentireentry   ATColumn1 '  LicenseExceptions     CIV:0 4 Yes,fordeemedexports,asdescribed { T in734.2(b)(2&%%&)(ii)oftheEAR,#&%%&®7#Ԁof O (  technologyforthe development #  or productionofgeneralpurpose   microprocessorswithaNXXOXԀvector   processorunitwithoperandlengthof    64-bitorless,64-bitfloating   operationsnotexceeding32 |  GFLOPS,or16-bitormore m  floating-pointoperationsnot ^  exceeding32GMACS(billionsof vO  16bitfixedpointmultiply g@  accumulateoperationspersecond)O#X8#OXN#9 8#N 9f  . X1 DeemedexportsunderLicense I" ExceptionCIVaresubjecttoa : ForeignNationalReview(FNR) + requirement,see740.5oftheEAR  formoreinformationabouttheFNR.   LicenseExceptionCIVdoesnot  applytoECCN3E002technology  alsorequiredforthedevelopmentor  productionofitemscontrolledunder  ECCNsbeginningwith3A,3B,or  3C,ortoECCN3E002technology  alsocontrolledunderECCN3E003.}44   TSR: 4 Yes N#9 :#O#X 9:#  n  ListofItemsControlled  "f   Unit:N/A 8$! 0  RelatedControls:N/A %"   RelatedDefinitions:N/A %#   Items: & $ a.  Avectorprocessorunitdesignedtoperform \(5"& morethantwocalculationsonfloating-point 0) #' vectors(onedimensionalarraysof32-bitorlarger *#( numbers)simultaneously; *$)    TechnicalNote: Avectorprocessingunitis ,Y&+ aprocessorelementwithbuilt-ininstructionsthat '+ performmultiplecalculationsonfloating-point , vectors(one-dimensionalarraysof32-bitor - largernumbers)simultaneously,havingatleast y. onevectorarithmeticlogicunit. s L/ b. D Designedtoperformmorethantwo64-bitor  1 largerfloating-pointoperationresultspercycle;or  2 c. D Designedtoperformmorethanfour16-bit  o4 fixed-pointmultiply-accumulateresultspercycle jC5 (e.g.,digitalmanipulationofanaloginformation > 6 thathasbeenpreviouslyconvertedintodigital  7 form,alsoknownasdigitalsignalprocessing).  8  D  Note:   3E002.cdoesnotcontroltechnology g : formultimediaextensions. b; ;  D Notes :       L  x     !   =  D  p 1.   3E002doesnotcontrol technology > forthe developmentor productionof ? microprocessorcores,havingallofthefollowing: ]@  D  p  D  p   a .Using technologyatorabove *B 0.130%m;and C  D  p   b. Incorporatingmultilayer }E structureswithfiveorfewermetallayers. xQF  D  p 2.   3E002includes technologyfor H digitalsignalprocessorsanddigitalarray I processors.&%%& J #&%%&)H#&%%& #&%%&‰H#&%%& #&%%&H#3E003Other"technology"forthe D"M "development"or"production"ofitems #N describedintheListofItemsControlled.  #O  LicenseRequirements  %vQ  D ReasonforControl:NS,AT H'!!S Control(s)         L 0 x CountryChart("Ux(#x(#  D NSappliestoentireentry L  x NSColumn1 *p$W ATappliestoentireentry L  x ATColumn1 ?,&Y Ї LicenseExceptions  '   CIV: 4 N/A    TSR: 4 Yes,except.fand.g <    ListofItemsControlled  O (   Unit:N/A   0  RelatedControls:1)Technologyforthe    developmentor productionof space  {  qualifiedelectronicvacuumtubesoperating vO  atfrequenciesof31.8GHzorhigher, J#  describedin4ws; !O  5  3E003.g6M!OMnd(  7s;1 M,isundertheexport   licenseauthorityoftheDepartmentofState,   DirectorateofDefenseTradeControls(22   CFRpart121);2)See4un !O  5  3E0016%O!O9Ond(  7s;cgOԀforsiliconon s  insulation(SOI)technologyforthe nG   developmentor productionrelatedto B radiationhardeningofintegratedcircuits.   RelatedDefinitions:N/A    Items:  a.Vacuummicroelectronicdevices; f? b.Hetero-structuresemiconductordevicessuchas  highelectronmobilitytransistors(HEMT),  hetero-bipolartransistors(HBT),quantumwell  andsuperlatticedevices; c    Note:  4 3E003.bdoesnotcontroltechnology 2  forhighelectronmobilitytransistors(HEMT)  operatingatfrequencieslowerthan31.8GHzand  hetero-junctionbipolartransistors(HBT)    operatingatfrequencieslowerthan31.8GHz. !X! c."Superconductive"electronicdevices; &## d.Substratesoffilmsofdiamondforelectronic $% components; %{& e.Substratesofsilicononinsulator(SOI)for J'#!( integratedcircuitsinwhichtheinsulatorissilicon (!) dioxide; ("* f.Substratesofsiliconcarbideforelectronic *s$, components; n+G%-  B,&. % v g.Electronicvacuumtubesoperatingat '. frequenciesof31.8GHzorhigher.&%%&    !  / %vU#&%%&V#&%%& D #&%%&ŒV# % m 3E101&%%& TechnologyaccordingtotheGeneral w P2 TechnologyNoteforthe useofequipmentor N '3  softwarecontrolledby3A001.a.1or.2, % 4 3A101,or3D101.#&%%&V#   5 %mV LicenseRequirements   7  D ReasonforControl:MT,AT R+ 9 Control(s)         L  x CountryChart  ;  D MTappliestoentireentry L  x MTColumn1 z = ATappliestoentireentry L  x ATColumn1 I"?  LicenseExceptions  A  D CIV:  N/A vC  D TSR:  N/A   qJD  ListofItemsControlled  F  D Unit:N/A H  D RelatedControls:N/A qI  D RelatedDefinitions:N/A lEJ  D Items: @K Thelistofitemscontrollediscontainedinthe M ECCNheading.  N  3E102 TechnologyaccordingtotheGeneral 8#Q TechnologyNoteforthe developmentof $R  softwarecontrolledby3D101.  $S  LicenseRequirements  &j U  D ReasonforControl:MT,AT <("W Control(s)         L  x CountryChart )#Y  D MTappliestoentireentry L  x MTColumn1 +d%[  _,8&\ ATappliestoentireentry   ATColumn1 '  LicenseExceptions     CIV: 4 N/A z S   TSR: 4 N/A  N '  ListofItemsControlled      Unit:N/A  z    RelatedControls:N/A I"    RelatedDefinitions:N/A     Items:   Thelistofitemscontrollediscontainedinthe r  ECCNheading. mF   % 8 3E201 TechnologyaccordingtotheGeneral  TechnologyNoteforthe useofequipment  controlledby3A001.e.2or.e.3,3A201or3A225 p to3A233.  nG %8` LicenseRequirements     ReasonforControl:NP,AT  Control(s)0 4 0` 440 ` ` 0  0  0  CountryChartlE NPappliesto technology0 0  NPColumn1 forequipmentcontrolledby  3A001.e.2,or.e.3,3A201or    3A225to3A233forNP !h! reasons c"<" ATappliestoentireentry0 0  ATColumn1 $$ &%%& LicenseExceptions  %&   CIV: 4 N/A ^'7!(   TSR: 4 N/A  2( ")  ListofItemsControlled  )#+   Unit:N/A +^%-   RelatedControls:N/A Y,2&.  D RelatedDefinitions:N/A '.  D Items: / Thelistofitemscontrollediscontainedinthe |1 ECCNheading. w P2  % W 3E292 TechnologyaccordingtotheGeneral  5 TechnologyNoteforthe development,  6  production,or useofequipmentcontrolled  z7 by3A292.  xQ8 %Wf LicenseRequirements  # :  D ReasonforControl:NP,AT  < Control(s)         L  x CountryChart vO > NPappliestoentireentry L  x NPColumn2 @ ATappliestoentireentry L  x ATColumn1 B  LicenseExceptions  mFD  D CIV:  N/A F  D TSR:  N/A   G  ListofItemsControlled  mI  D Unit:N/A ?K  D RelatedControls:N/A L  D RelatedDefinitions:N/A M  D Items:  N Thelistofitemscontrollediscontainedinthe c"<P ECCNheading. 7#Q  D 3E980 Technologyspeciallydesignedfor %T  development, production,or useofitems &c U controlledby3A980and3A981.  a':!V  LicenseRequirements   )"X  D ReasonforControl:CC,AT *$Z Control(s)         L  x CountryChart _,8&\   CCappliestoentireentry   CCColumn1  ATappliestoentireentry   ATColumn1 |  LicenseExceptions  K $   CIV: 4 N/A     TSR: 4 N/A     ListofItemsControlled  sL    Unit:N/A     RelatedControls:N/A     RelatedDefinitions:N/A     Items: s  Thelistofitemscontrollediscontainedinthe B ECCNheading.    3E991#&%%&Pd# Technologyforthe development, k  production,or useofelectronicdevicesor iB componentscontrolledby3A991,general @ purposeelectronicequipmentcontrolledby  3A992,ormanufacturingandtestequipment  controlledby3B991or3B992,ormaterials  controlledby3C992.&%%&  u  LicenseRequirements  G    ReasonforControl:AT  Control(s) 4  `      CountryChart !s!   ATappliestoentireentry   ATColumn1 A## Ї LicenseExceptions  '#  D CIV:  N/A %  D TSR:  N/A   &  ListofItemsControlled  O ((  D Unit:N/A  *  D RelatedControls:N/A  +  D RelatedDefinitions:N/A  {,  D Items: vO- Thelistofitemscontrollediscontainedinthe  / ECCNheading.  0  #&%%&q#EAR99ItemssubjecttotheEARthatarenot nG 3 elsewherespecifiedinthisCCLCategoryorin E4 anyothercategoryintheCCLaredesignated 5 bythenumberEAR99. &%%& 6 #&%%&v#&%%&@  < #&%%&v#