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ARCHIVED
- Data Not Current
For Information
Purposes Only
Glenn
Research Center
1988 Phase II
High Temperature,
Silicon Carbide, Power MOSFET
Cree
Research, Inc.
Durham, NC
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INNOVATION
A process for producing high performance
power metal/oxide semiconductor field-effect transistors (MOSFETs) in
Silicon Carbide (SiC)
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Cross-Section of a SiC Power MOSFET
Optional Powerpoint
file
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ACCOMPLISHMENTS
- Demonstrated the first vertical
power MOSFET in SiC
- Fabricated a high-performance
MOSFETs in SiC that can operate up to 300°C
- Received Patent on this technology
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COMMERCIALIZATION
- Increased SiC material and device
sales by >$3M
- Created 12 new jobs and saved
existing jobs
- Initiated tremendous worldwide
interest in the area of SiC power semiconductors, resulting in multi-$M
programs in SiC MOSFETs for government and commercial labs
- Total market potential for SiC
Power MOSFETs would be >$2B
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GOVERNMENT/SCIENCE
APPLICATIONS
- Will be used in aircraft engines
- Applicable for high temperature
electronics in space craft and will reduce weight and size of spacecraft
- Can be used to replace Silicon
power devices in power circuits for electric motors and power control,
for electric vehicles, robotics, and power supplies
- SiC MOSFETs offer much higher
efficiencies than silicon in these applications. Potential
power savings of >$1B/yr are possible
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Curator:
SBIR Support 02/28/08 |
