Licensable Technologies
: Materials
: Composites
Method of Transferring an Ultra-Thin Layer of Crystalline Material with High Crystalline Quality
Abstract
With the acceleration of new technology nodes and the resulting industry shift to advanced materials that provide enhanced device performance and low power consumption, silicon-on-insulator (SOI) wafer technology has become a critical, enabling technology. This invention provides a revolutionary method of transferring an ultra-thin layer of crystalline material with high crystalline quality.
Application(s)
• Silicon on insulator (SOI) wafers
• Embedded processors
• Semiconductors
• Integrated circuits
• Silicon-on-quartz
• Silicon-on-glass
Advantages
• Better control of layer thickness
• Improved quality of the thin layer
• Improved smoothness of the thin layer
• Less transfer defects
IP Status: Available both Exclusively and Non Exclusively
Commercialization Strategy: Available for non-exclusive and exclusive field of use license.
Reference Number: 621
S Number: DOE reference no.(s): 104,899
Patents & Applications:
Application(s) Pending
Posted: 05-09-2005
Contact
John Mott
Technology Transfer Division
Los Alamos National Laboratory
P.O. Box 1663, MailStop C334
(505) 665-0883
jmott@lanl.gov