Los Alamos National Laboratory
Lab Home  |  Phone
 
 

Licensing, TT

CONTACTS

Licensable Technologies : Engineering : Imaging

Enhanced Performance Ccd Output Amplifier

Abstract
A low-noise FET amplifier is connected to amplify output charge from a che coupled device (CCD). The FET has its gate connected to the CCD in common source configuration for receiving the output charge signal from the CCD and output an intermediate signal at a drain of the FET. An intermediate amplifier is connected to the drain of the FET for receiving the intermediate signal and outputting a low-noise signal functionally related to the output charge signal from the CCD. The amplifier is preferably connected as a virtual ground to the FET drain. The inherent shunt capacitance of the FET is selected to be at least equal to the sum of the remaining capacitances.

IP Status: Available both Exclusively and Non Exclusively

Reference Number: 55

S Number: DOE reference no.(s): 80,432

Patents & Applications:
United States National Patent Number 5589881 Issued on 12/31/1996

Posted: 09-17-2004

Contact
John Russell
Technology Transfer Division
Los Alamos National Laboratory
P.O. Box 1663, MailStop C334
(505) 665-3941
jrussell@lanl.gov

 

strut

Operated by Los Alamos National Security, LLC for the U.S. Department of Energy's NNSA

Inside | © Copyright 2008-09 Los Alamos National Security, LLC All rights reserved | Disclaimer/Privacy | Web Contact