Licensable Technologies : Materials : Separations

Semiconductor Micro-wires

Abstract
A method for making flexible, semiconducting wires in a continuous process with diameters between 1 micron and 1 millimeter.

Application(s)

• sensors
• micro-electromechanical elements
• electronic circuits
• photonic structures

Advantages
The process has the following advantages: 

• applicable to both elemental (silicon, germanium, etc.) and compound (gallium arsenide, indium antimonide, etc) semiconductors as well as mixtures.
• retains high purity of starting materials in the finished product 
• can form wires either with or without a dielectric coating
• can produce high strength, high flexibility wires 
• uses low cost capital equipment 
• uses low cost, readily available consumable materials.

IP Status: Available Exclusively

Reference Number: 110

S Number: DOE reference no.(s): 94,619

Patents & Applications:
Application(s) Pending

Posted: 09-16-2004

Contact
John Mott
Technology Transfer Division
Los Alamos National Laboratory
P.O. Box 1663, MailStop C334
(505) 665-0883
jmott@lanl.gov