Licensable Technologies : Materials : Fuel Cells

Method of Transferring Strained Semiconductor Structures

Abstract
With the acceleration of new technology nodes and the resulting industry shift to advanced materials that provide enhanced device performance and low power consumption, strained silicon-on-insulator (SSOI) wafer technology has become a critical, enabling technology. This invention builds on previous innovative methods of transferring ultra-thin layers of crystalline material for next generation silicon-on-insulator (SOI) -based devices.

Application(s)
• High-speed circuits
• High-speed wireless and broadband
• Photodetectors
• Solar cell technology
• Silicon-on-quartz (SOQ) technology
• Silicon-on-glass (SOG) technology

Advantages
• Excellent control of strained Si thickness
• High quality of thin layer Si
• Smooth cleavage of the thin layer
• Fewer transfer defects than conventional

IP Status: Available both Exclusively and Non Exclusively

Commercialization Strategy: We are seeking to license this technology either non-exclusively or exclusively for specific field of use. We would also entertain offers to work collaboratively in the form of Cooperative Research & Development Agreements (CRADA). Any agreement contract is expected to include funds-in to the Laboratory.

Reference Number: 786

S Number: DOE reference no.(s): 109,115

Patents & Applications:
Application(s) Pending

Posted: 09-05-2006

Contact
John Mott
Technology Transfer Division
Los Alamos National Laboratory
P.O. Box 1663, MailStop C334
(505) 665-0883
jmott@lanl.gov