Licensable Technologies
: Materials
: Separations
Semiconductor Micro-wires
Abstract
A method for making flexible, semiconducting wires in a continuous process with diameters between 1 micron and 1 millimeter.
Application(s)
- sensors
- micro-electromechanical elements
- electronic circuits
- photonic structures
Advantages
The process has the following advantages:
- applicable to both elemental (silicon, germanium, etc.) and compound (gallium arsenide, indium antimonide, etc) semiconductors as well as mixtures.
- retains high purity of starting materials in the finished product
- can form wires either with or without a dielectric coating
- can produce high strength, high flexibility wires
- uses low cost capital equipment
- uses low cost, readily available consumable materials.
IP Status: Available Exclusively
Reference Number: 110
S Number: DOE reference no.(s): 94,619
Patents & Applications:
Application(s) Pending
Posted: 09-16-2004
Contact
John Mott
Technology Transfer Division
Los Alamos National Laboratory
P.O. Box 1663, MailStop C334
(505) 665-0883
jmott@lanl.gov