Project Title:
Optimization of Silicon Carbide Production
08.09-6500
Optimization of Silicon Carbide Production
Aerodyne Research Inc.
45 Manning Road
Billerica
MA
01821
Warmhoudt
Joda C.
NAS3-23891
Amount:500,000
LeRC
NAS3-24531
Abstract:
Silicon carbide (SiC) is an advanced material which has significant technicaland economic potential in electronic and optical device applications. The high temperature
tolerance of SiC makes it particularly attractive in applications requiring active
electronics which operate at elevated temperatures. Progress toward realizing the
benefits provided by SiC devices has been limited by difficulties in growing semiconductor
quality material. Recently, however, a NASA research team has developed a two-step
CVD process, for producing epitaxial B-SiC on Si single crystal wafers. In this
process, buffer or initial layers deposited in the first step minimize lattice mismatches
so that high quality SiC can be deposited in the second or crystal growth step.
The objective of this program is to develop a mechanis-
tically accurate, predictive model which will provide the required basis for optimizing
the two-step process. Phase I of this program focused on the gas phase chemistry
and led to an evaluation of the impact of gas phase chemistry on deposition.
Phase II focuses on the surface chemistry of the deposition process and extending
current modeling capabilities. Provisions are included for additional gas phase
studies where warranted by the surface and modeling work.