Project Title:
Advanced GaAs Monolithic 20 GHz RF Switch Matrix
14.02-6642
Advanced GaAs Monolithic 20 GHz RF Switch Matrix
Microwave Monolithics Inc.
465 E. Easy Street
Simi Valley
CA
93065
Ch'en
Daniel R.
NAS3-24895
Amount:
LeRC
NAS3-24248
Abstract:
Fabrication and evaluation of a novel advanced GaAs monolithic 20 GHzRF switch matrix for satellite communications applica-tions has been accomplished.
The feasibility of the RF switch matrix approach has been verified by detailed study
of a proprietary crosspoint switching element design and the analysis of its performance
in large arrays. Passive FET switches are used for signal steering, while FET buffer
amplifiers provide an overall insertion loss of 0 dB, allowing two dimensional cascading
to form larger arrays (up to 100 X 100), also with 0 dB insertion loss. A proprietary
packaging concept initially conceived for a monolithic IF switch matix was extended
to 20 GHz to facilitate modular construction of large crosspoint matrices and interfering
to other systems components.
The next level of effort will concentrate on demonstration of the monolithic RF matrix
switch concept by building a complete 3 X 3 switch matrix. Following a second design
iteration of the matrix and its associated package and test fixture, a 10 X 10 or
TBD size
monolithic switch matrix will be designed, complete with on-chip buffer amplifiers
and partial drive electronics.