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Radiation-Hardened Half-Micron Analog CMOS Technology
We have developed a robust CMOS6R technology for those customers who need advanced integrated circuits capable of operating in severe radiation environments in 5-volt systems. In addition to adding feedback resistors for single-event upset immunity, we've converted from LOCOS to shallow trench isolation and employed hardening techniques to allow the parts to function after large total doses of ionizing radiation.
Some of the features of this technology include Base Line Technology Elements:
- 5 V R/H Analog CMOS Technology
- Twin Well Process(22 Levels)
- STI (Hardened Field Oxide)
- LDD implants
- Vt ~1.0 & -1.0V
- tox = 13 nm
- SEU resistors
- Poly/n+ Capacitors
- Band Gap Reference npn
- Titanium Salicide
- Tungsten Vias with CMP
- PECVD oxide ILD with CMP
- Al/Cu Metal(3 Metal Levels)
Modules under development:
- Programmable Anti-Fuses
- Integrated Photodiodes
- HV Photovoltaic Devices
Additional technologies include:
- 0.6µm RH (Radiation Hardened) Analog (Baseline)
- 0.35µm RH Digital SOI (Development)
- 0.25µm RH mixed signal, SOI (Research)
- Integrated MEMS Technologies (IMEMS Research)
- Polysilicon Based IMEMS
- CMOS Based IMEMS
- Monolithic Sensor Technology(Research)
- Microgas Chromatography
- Micromass Spectometry
- Silicon Optical Devices (R&D)
- Integrated Photodiodes
- High Voltage, Photovoltaic Devices
- Retinal Prosthesis
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