Bibliographic Citation

Return to Search Results Return to Original Search Page

Patent Number:	US 5505928
Patent Title:	Preparation of III-V semiconductor nanocrystals
Full Text:
Issue Date:	01/01/1996
Inventor(s):	Alivisatos, A. Paul (Berkeley, CA); Olshavsky, Michael A. (Brunswick, OH)
Lab/Technology Center:	Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
Sponsoring Office:	USDOE
Contract Number:	AC03-76SF00098
Subject Categories:	preparation; iii-v; semiconductor; nanocrystals; nanometer-scale; crystals; iii-v; semiconductors; disclosed; prepared; reacting; iii; metal; source; anion; source; liquid; phase; elevated; temperature; presence; crystallite; growth; terminator; pyridine; quinoline; semiconductor nanocrystals; elevated temperature; liquid phase; semiconductor nanocrystal; metal source; iii-v semiconductor; iii-v semiconductor; iii-v semiconductors /423/117/420/
Assignee:	Regents of University of California (Oakland, CA)
Abstract:	Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.
Return to Search Results Return to Original Search Page
Top