Bibliographic Citation
| US 5,505,928/A/ | |
| Preparation of III-V semiconductor nanocrystals | |
| 04/09/1996 | |
| PAN: US patent application 8-231,345 | |
| Alivisatos, A.P.; Olshavsky, M.A. | |
| University of California | |
| USDOE | |
| AC03-76SF00098 | |
| 36 MATERIALS SCIENCE | |
| Univ. of California, Oakland, CA (United States) | |
| Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs. | |
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