NASA Space Technology
Instrument and Sensing Technology
Terms and Definitions
This area tends to be a real alphabet soup of terms and acronyms. I've started
to pull together some of these. I hope you find this list useful.
Links to Other Glossaries, Acronym Lists, etc.
Glossary / Acronym List
- ADC
- Analog to Digital Converter
- APD
- Avalanche Photodiode
- APS
- Active Pixel Sensor
Links to APS Information:
- ASCII
- American Standard Code for Information Interchange
- ASIC
- Application Specific Integrated Circuit
- BASS
- Bulk Avalanche Semiconductor Switch: Used to generate high-peak-power, fast
risetime pulses of microwave energy for applications such as ultra-wide band
radar and high-power electronic warfare systems.
- BIB
- Blocked Impurity Band. As I understand it, this is a term for an
IBC detector that is a
Rockwell
International trade mark.
- BiHEMT
- Bipolar HEMT
- BPSK
- Binary Phase-Shift Keying (modulators)
- CAD
- Computer Aided Design
- CBE
- Chemical Beam Epitaxy
- CCD
- Charge-Coupled Devices
Some links to CCD sources of information:
- CCSDS
- Consultative Committee for Space Data Systems. The Consultative
Committee for Space Data Systems (CCSDS) is an international organization of
space agencies interested in mutually developing standard data
handling techniques to support
space research, including space science and applications, conducted
exclusively for peaceful
purposes. For more information see the
Consultative
Committee for Space Data Systems Home Page.
- CMOS
- CMOS stands for complementary metal-oxide-semiconductor technology. It is the
microelectronics technology that is used in almost all microprocessors,
application-specific integrated circuits (ASICS), field-programmable gate arrays
(FPGAs), and memory products. There is enormous activity around the world in
improving CMOS.
- CSBH
- Crescent-Substrate-Buried Heterostructure
- DEXL
- Deep Etch X-ray Lithography. See LIGA.
- DFB
- Distributed Feedback
- DIAL
- DIfferential Absorption Lidar
- ESCA
- Electron Spectroscopy for Chemical Analysis
- Extrinsic
- See chart on
Energy
Bandgap Structure of Semiconductors
- FET
- Field Effect Transistor
- GaAs
- Gallium Arsenide
- GSMBE
- Gas Source MBE
- HB
- Horizontal Bridgman (crystal growth)
- HBT
- Heterojunction Bipolar Transistor
- HEMT
- High Electron Mobility Transistor (usually, although I once saw this used for
Hot Electron Metal-base Transistor)
- Heterodyne
- In heterodyne systems a known local oscillator (LO)
is combined (in a mixer) with the signal you want to measure to produce a beat
frequency (called the IF) which is at a lower frequency than the
original signal (and thus easier to work with). Broadcast television uses this method
to convert the broadcast signals to a standard frequency for the rest of the electronics
to deal with.
- HgCdTe
- Mercury Cadmium Telluride (MCT)
- HIP
- Heterojunction Internal Photoemission (usually referring to SiGe/Si HIP infrared
detector arrays)
- HIT
- Heterojunction Interface Trap (used in reference to infrared detectors, these tend to
produce steep non-linear response and be very sensitive to operating temperature,
making them difficult to calibrate)
- IBC
- Impurity Band Conduction (used for very sensitive, cryogenically cooled
infrared detectors)
- IC
- Integrated Circuit
- IF
- Intermediate Frequency:
Term frequently used in heterodyne systems.
- Intrinsic
- See chart on
Energy
Bandgap Structure of Semiconductors
- IR
- Infrared (region of the electromagnetic spectrum)
- JFET
- Junction Field Effect Transistor (FET)
- KTP
- KTiOPO4: Potassium Titanyl Phosphate (nonlinear optical material)
- LADAR
- LAser Detection And Ranging. LIDAR
using a Laser.
- Laser
- Light Amplification by Stimulated Emission of Radiation
- LIDAR or Lidar
- LIght Detection And Ranging
Some links to LIDAR sources of information:
- LEC
- Liquid Encapsulated Czochralski (crystal growth)
- LED
- Light Emitting Diode
- LIGA
- Lithographie, Galvanaplastie, Abformung (i.e., Lithography, Plating, Molding),
a German acronym signifying a combination of deep-etch x-ray lithography,
electroplating, and injection molding.
The LIGA technique originated at the Karlsruche (or is it Karlsruhe?)
Nuclear Research Center in Germany.
Some LIGA Resources:
- Based on the LIGA technique, the
OSAT High Energy Collimator Grid
Technology effort dramatically reduces size and cost of planned
High Energy Solar Spectroscopic Imager
(HESSI)
Mission. The NASA deep-etch x-ray lithography work uses
the following x-ray light sources:
- LIGA from
MCNC.
- LO
- Local Oscillator: Term frequently used in heterodyne systems.
- LPE
- Liquid Phase Epitaxy
- LSI
- Large Scale Integration
- MAMA
- Multi-Anode Microchannel Array. Click
here for a GIF
drawing of a MAMA ultraviolet detector scanned in from a presentation to NASA by the
Center for Space Science and Astrophysics at
Stanford University in June of 1992.
- MBE
- Molecular Beam Epitaxy
- MCM
- Multi-Chip Module
- MCP
- Multichannel Plate
- MCT
- Mercury Cadmium Telluride (HgCdTe)
- MDC
- Multistage Depressed Collector (electron beam technology): Invented in 1971 by
Dr. Henry Kosmahl of the
NASA
Lewis Research Center (LeRC). Led to two
Emmys. The first Emmy was to
NASA and the
Canadian Department of Communication
for pioneering work on direct broadcast of television from space by means of the
Communications Technology Satellite (CTS).
The second Emmy was to the
Public Broadcasting System (PBS) for application of
NASA technology
to develop a highly effective klystron for UHF television
transmission.
- MEMS
- Micro-Electro-Mechanical Systems.
There are a lot of MEMS resources out there, most of which can be found through
the MEMS Subway.
- MESFET
- Metal-Semiconductor Field Effect Transistor (FET)
- MIC
- Microwave Integrated Circuit
- MIDAS
- MCM Interconnect Designer's Access Service:
The MIDAS Foundry Access Service
from the
from
Information Sciences Institute (ISI).
- MIPS
-
- MIS
- Metal-Insulator-Semiconductor
- MISFET
- Metal-Insulator-Semiconductor (MIS)
Field Effect Transistor (FET)
- MMIC
- Monolithic Microwave Integrated Circuit
- MOCVD
- Metallo-Organic Chemical Vapor Deposition
- ModFET or MODFET
- Modulation-doped Field Effect Transistor (FET)
- MOMBE
- Metallo-Organic Molecular Beam Epitaxy (MBE)
- MOS
- Metal-Oxide-Silicon or Metal-Oxide-Semiconductor
- MOSFET
- Metal-Oxide-Semiconductor (MOS)
Field Effect Transistor (FET)
- MOSIS
- The MOSIS VLSI Fabrication Service -- Custom VLSI
Fabrication from the
University of Southern California's
Information Sciences Institute.
- MQW
- Multiple Quantum Well
- MWIR
- Midwave Infrared (IR)
- OMVPE
- Organometallic Vapor Phase Epitaxy (VPE)
- PBT
- Permeable Base Transistor
- PECVD
- Plasma-Enhanced Chemical Vapor Deposition (CVD)
- PIN
- Positive-Intrinsic-Negative (diode)
- QPSK
- Quadrature Phase-Shift Keying (in the context of a 4 GHz microwave
integrated circuit, QPSK modulator for 120 Mbits/sec data rates).
" Achieved by driving two balanced binary phase-shift keying (BPSK)
modulators in parallel and using a 90 degree,
3-dB hybrid to combine their outputs."
- QWIP
- Quantum Well Infrared Photodetector. A quantum well infrared
photodetector is an infrared detector which consists of multiple alternating thin GaAs
and AlGaAs layers. It utilizes infrared absorption inside quantum wells.
Some QWIP Resources:
- RADAR
- RAdio Detection And Ranging.
- RAM
- Random Access Memory
- RF
- Radio Frequency
- RHEED
- Reflection High Energy Electron Diffraction
- RISC
- Reduced Instruction Set Computer
- RTA
- Rapid Thermal Annealing
- SAM
- Separate Absorption and Multiplication (photodiode)
- SDHT
- Selectively Doped Heterostructure Transistor
- SIMS
- Secondary Ion Mass Spectroscopy
- SIS
- Superconductor-Insulator-Superconductor:
A type of mixer used in heterodyne systems.
- SOI
- Silicon-On-Insulator
- SPARC
- Scalable Processor ARChitecture (Trade Mark by
Sun Microsystems, Inc.):
RISC architecture with fixed length 32 bit instructions, etc.
- SS/TDMA
- Satellite-Switched Time-Division Multiple-Access
(used in context of techniques for advanced communication satellites).
- SWIR
- Short Wave Infrared (IR) region of the electromagnetic spectrum.
- TELOS
- Transfer of Epitaxial Layers to Optimal Substrate
- TTL
- Transistor Transistor Logic
- UHF
- Ultra-High Frequency (Television Broadcast Band)
- UHV
- Ultrahigh Vacuum
- ULSI
- Ultra-Large Scale Integration
- VB
- Vertical Bridgman (crystal growth)
- VBL
- Vertical Bloch Line
- VHDL
- Very High-level Definition Language (if I remember right, but I plan to look it up, so
take this with a grain of salt).
- VHF
- Very-High Frequency (Television Broadcast Band)
- VLSI
- Very Large Scale Integration
- VPE
- Vapor Phase Epitaxy
- WDM
- Wavelength Division Multiplexing
- YAG
- Yttrium Aluminum Garnet
- YIG
- Yttrium Iron Garnet
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Created December 29, 1994, 1994. Last update: October 30, 1996. Please see my
Disclaimer
and Web Policy page. Maintained by
Gordon Johnston.
Gordon.Johnston@hq.nasa.gov
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