Project Title:
Ultra-Fast, Ultra-Dense, Radiation-Hard, Non-Volatile GaAs Random Access Memory
07.06-3666
910320
Ultra-Fast, Ultra-Dense, Radiation-Hard, Non-Volatile GaAs Random Access Memory
Electro-Optek Corporation
3152 Kashiwa Street
Torrance
CA
90505
V.K.
Raman
310-534-3666
GSFC
NAS5-31880
128
07.06-3666
910320
Abstract:
Ultrafast, Ultradense, Radiation-Hard, Nonvolatile GaAs Random Access Memory
A radiation-hard, non-volatile random access memory (RAM) using an epitaxial, InSb
Hall element fabricated on gallium arsenide (GaAs) in conjunction with a thin-film
layer of permalloy will be developed. The permalloy layer serves as the non-volatile
memory storage medium, while the InSb Hall element acts as the high-speed memory
readout. The RAM can be built by very large scale integrated-circuit (VLSI) technology.
First, a special molecular beam epitaxy process for growing a high-mobility epitaxial,
InSb layer on GaAs will be developed, followed by the development of a thin layer
of a Ni:Fe permalloy on top of the InSb to form the memory cell. The densely packed
memory cells will then be integrated into high-electron-mobility transistor (HEMT)
circuits previously processed on the GaAs to complete the non-volatile RAM array.
By virtue of InSb's high mobility and extremely fast, low-noise HEMT driver, an access
time less than 5 nanosecond and a packaging density greater than 1M bit/cm2 are achievable.
These characteristics are superior to those of the state-of-the-art static, non-volatile
RAM. Because the magnetization of the permalloy is not affected by high-energy radiation
and the entire structure is built on a semi-insulating substrate, this RAM is radiation
hard--well in excess of the equivalent of 108 rad(Si) of total dose. It is ideally
suited for spacecraft-based data management and storage systems deployed in a combination
of Van Allen belts, solar-flare and cosmic-ray radiation environments for 10 years
or longer.
The main applications are high-density static RAM for high-speed computing and for
spaceborne and defense computer systems requiring immunity to nuclear radiation damage.
high-density, high-speed memory, radiation hardness, random access memory, nonvolatile,
HEMT, InSb Hall element