Project Title:
High-Power, Single-Mode, Diode Lasers Operating at 1.047 Microns to 1.064 Microns
08.22-8827
912269
High-Power, Single-Mode, Diode Lasers Operating at 1.047 Microns to 1.064 Microns
Northeast Semiconductor, Inc.
767 Warren Road
Ithaca
NY
14850
Michael S.
Frost
607-257-8827
GSFC
NAS5-31941
176
08.22-8827
912269
Abstract:
High-Power, Single-Mode Diode Lasers Operating at 1.047 Microns to 1.064 Microns
High-power, single-mode diode lasers are of considerable interest for optical sources
and solid-state lasers systems components because of their performance and reliability.
Currently, these devices are in production in Japan using molecular beam epitaxy
(MBE) to service the compact-disk laser market. These structures use AlGaAs and operate
below 860 nm. A reasonably straightforward extension of AlGaAs quantum well materials
using pseudomorphic GaInAs can be made with MBE to extend the wavelength range into
the IR up to 1.07 m. This program addresses the materials growth and fabrication
technology to develop high power (100 mW) single-mode diode lasers at the wavelengths
of 1.047 m and 1.064 m. The epitaxial structures required for these emission wavelengths
require that MBE be used to exploit the extreme edge of the pseudomorphic limits
of the AlGaAs/GaInAs system. The uniformity in thickness and alloy composition of
MBE growth will be used in conjunction with low-cost laser fabrication methods to
result in prototype quantities of hermetically sealed single-mode laser devices at
the completion of Phase I. The range of applications in solid-state laser systems
for NASA include frequency doubled YLF pump sources (a Phase II objective) and injection-locking
sources for YAG laser systems.
Application for this technology would be in YLF pump sources, injection locking sources,
and low-power YAG replacements.
quantum well, laser diode, 1.047 nm - 1.06 nm, single-mode