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Licensable Technologies : Materials Wide band gap semiconductor templatesAbstract Application(s)
Advantages
One example of the benefits is SiC which is a wide bandgap semiconductor currently of interest for power device industry applications because of its high electric field breakdown strength (one order of magnitude larger than Si), higher operating temperature (600 �C vs. 150 �C) and high thermal conductivity (3 X). Historically, most research has focused on developing 4H and 6H-SiC, in single crystal form, as a semiconductor material for high temperature and high power electronics. The 4H-SiC being slightly preferred over the 6H-SiC because its electron and hole mobilities are identical along the two major crystallographic directions whereas in the latter polytype the mobilities exhibit anisotropy. Small substrate wafer size (< 4 in.), the high cost of such substrate materials and the inability to grow epitaxial layers on any substrates other than single crystal SiC, has hindered the development of these polytypes for power applications. Another example is the epitaxial growth of wide band gap ZnO on other substrates. ZnO has attracted much attention recently due to its potential applications as the base material for ultrafast nonlinear optical devices, short wavelength semiconductor lasers, electrodes for solar cell, surface acoustic wave devices, and photoluminescent (PL) devices. It has been also considered as one of the promising phosphors for low-voltage luminescence in flat panel displays. The widely used epitaxial template for ZnO is c-plane sapphire. This limits the integration of ZnO with other technologically important materials such as Si. With this invention, it is feasible to integrate ZnO with other materials for novel electronic devices. IP Status: Available both Exclusively and Non Exclusively Reference Number: 729 S Number: DOE reference no.(s): 109,053 Patents & Applications: Posted: 11-06-2008 Contact
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