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Award Abstract #0215872
MRI: Development of a Spin-Polarized Field-Effect Transistor


NSF Org: DMR
Division of Materials Research
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Initial Amendment Date: August 12, 2002
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Latest Amendment Date: December 3, 2002
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Award Number: 0215872
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Award Instrument: Continuing grant
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Program Manager: Charles E. Bouldin
DMR Division of Materials Research
MPS Directorate for Mathematical & Physical Sciences
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Start Date: September 1, 2002
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Expires: August 31, 2005 (Estimated)
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Awarded Amount to Date: $500000
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Investigator(s): Paul Thibado thibado@uark.edu (Principal Investigator)
Vincent LaBella (Co-Principal Investigator)
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Sponsor: University of Arkansas
120 Ozark Hall
FAYETTEVILLE, AR 72701 479/575-3845
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NSF Program(s): EXP PROG TO STIM COMP RES,
MAJOR RESEARCH INSTRUMENTATION
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Field Application(s): 0106000 Materials Research
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Program Reference Code(s): AMPP, 9161, 9150
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Program Element Code(s): 9150, 1189

ABSTRACT

This grant supports development of a low-temperature, ultra-high vacuum, scanning tunneling microscope, which employs two 100% spin-polarized tips. In this new instrument spin-polarized electrons will tunnel into GaAs at one location, traverse through a small region of the sample, and then tunnel out through another tunnel junction. To achieve this, a novel double-cleaved sample preparation procedure will be developed that uses two STM tips separated by an adjustable parameter from a few nanometers to millimeters. This system will be used to study the coherent transport properties of spin-polarized electrons and, in addition, will allow the study of quantum mechanical transport properties for coupled spin-dependent tunneling junctions. A coherent electron spin current will be injected using a ferromagnetic-metal STM tip (100% spin-polarized single-crystal Ni<110> wire), and then coherently removed using another ferromagnetic-metal STM tip. By being at low temperatures the spin-relaxation lifetime is significantly extended, allowing high signal-to-noise ratio data acquisition. This development is complimented with an educational program designed to enhance the understanding of science by the general public.

This equipment is critical for studying the complex properties of spintronics devices. Students will gain valuable skills in the development of this equipment and will be able to transfer the technology to other interested parties upon graduation. The revolutionary idea of spintronics currently hinges on discovering how to coherently transfer the electron spin from one material to another. This research can provide significant guidance toward achieving this goal, thereby influencing the research fields of surface physics, magnetism, device physics, basic electron-spin physics, electronic materials, and microscopy.

 

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Last Updated:
April 2, 2007
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Last Updated:April 2, 2007