Skip navigation to main content. National Renewable Energy Laboratory (NREL)NREL HomeInnovation for Our Energy Future
About NRELScience and TechnologyTechnology TransferApplying TechnologiesLearning About Renewables
Technology Transfer
Technology Transfer Home About Technology Transfer Technology Partnership Agreements Licensing Agreements Nondisclosure Agreements Research Facilities Economic Development News

Low-Band Gap Double-Heterostructure InAsP/GaInAs Photovoltaic Converters

U.S. Patent 6,300,557


Technology Description

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.

Inventors

Mark W. Wanlass

Interested in this Technology?

  • See the full U.S. Patent for this technology.
  • NREL is looking for an organization to develop and commercialize this innovative technology. Interested organizations may consider developing/commercializing this technology through a license agreement, Cooperative Research Agreement, or Work for Others agreement. Please contact Richard Bolin at (303) 275-3028 for licensing, CRADA, and Work for Others opportunities.