[Federal Register: March 25, 2008 (Volume 73, Number 58)]
[Notices]
[Page 15738]
From the Federal Register Online via GPO Access [wais.access.gpo.gov]
[DOCID:fr25mr08-34]
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DEPARTMENT OF COMMERCE
National Institute of Standards and Technology
Notice of Inventions Available for Licensing
AGENCY: National Institute of Standards and Technology, Commerce.
ACTION: Notice of inventions available for licensing.
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SUMMARY: The inventions listed below are owned in whole or in part by
the U.S. Government, as represented by the Secretary of Commerce. The
U.S. Government's interest in these inventions is available for
licensing in accordance with 35 U.S.C. 207 and 37 CFR part 404 to
achieve expeditious commercialization of results of federally funded
research and development.
FOR FURTHER INFORMATION CONTACT: Technical and licensing information on
these inventions may be obtained by writing to: National Institute of
Standards and Technology, Office of Technology Partnerships, Attn: Mary
Clague, Building 222, Room A155, Gaithersburg, MD 20899. Information is
also available via telephone: 301-975-4188, fax 301-975-3482, or e-
mail: mary.clague@nist.gov. Any request for information should include
the NIST Docket number and title for the invention as indicated below.
SUPPLEMENTARY INFORMATION: NIST may enter into a Cooperative Research
and Development Agreement (``CRADA'') with the licensee to perform
further research on the invention for purposes of commercialization.
The inventions available for licensing are:
[NIST DOCKET NUMBER: 7-003]
Title: Highly Charged Ion Modified Oxides (HCIMO) for Tunable
Resistance.
Abstract: Highly Charged Ion Modified Oxides (HCIMO) are achieved
by irradiating a thin, high resistance oxide with highly charged ions
(HCIs) and then depositing a conducting material of choice on top the
irradiated oxide. The irradiation by HCIs preferentially ablates a
region on the order of a cubic nanometer at each HCI's impact site
breaking a hole through the ultra-thin oxide. This is demonstrated by
preparing an insulating layer of aluminum oxide on a cobalt lower
electrode layer, exposing the oxide to very dilute HCI radiation, and
then depositing a cobalt upper layer. The data show a clear and
systematic decrease in the resistance of the multilayer devices
correlated to the HCI dose at very dilute doses. The nanometer
dimensions of individual HCI impacts and the precise control over the
dose combine to allow high precision selection of the material's
resistance over a wide range of values, currently demonstrated over
three orders of magnitude. As HCI modification only occurs within a few
nanometers of the surface and generally does not affect metals, no
special measures are needed to protect surrounding device structures
from HCI damage. Since the size of the material modification is
determined by the properties of a single ion, precise alignment is not
required, only uniform illumination of the device area by the HCI beam,
greatly simplifying commercial integration of HCI irradiation.
[NIST DOCKET NUMBER: 7-008]
Title: A Four-Wave Mixing Source of Squeezed Light for Image
Processing and Interferometry
Abstract: The invention provides a source of squeezed light,
generated using a 4-level, four-wave mixing scheme in rubidium vapor.
Strong relative-number squeezing between two beams has been
demonstrated; much stronger than previously seen in any four-wave
mixing system. The scheme relies on a chi(3) nonlinearity, and a
single-pass, no-cavity, experimental implementation which has relaxed
phase matching requirements, as compared to chi(2) crystal sources, and
easily produces squeezing in multiple spatial modes.
Dated: March 18, 2008.
Richard F. Kayser,
Acting Deputy Director.
[FR Doc. E8-6029 Filed 3-24-08; 8:45 am]
BILLING CODE 3510-13-P