Nanofabrication Facility
Contact: Aaron Stein
The Nanofabrication Facility provides 5,000 square feet of Class 1000 cleanroom space dedicated to state-of-the-art
processing of thin-film materials and devices. Core laboratory capabilities include high-resolution patterning by
electron-beam lithography, nanoimprint, and photolithography. Our Facility supports thin-film material deposition by
electron-beam evaporation, DC magnetron sputtering, and plasma-enhanced chemical vapor deposition. We also provide
reactive ion etch processes and MEMS-type deep silicon etch capabilities. The laboratory contains a dual-beam focused-ion
beam system capable of high-resolution imaging and including an Oxford EDX detector, ion-mill, and electron- and ion-induced
metal deposition.
Our facility capabilities extend beyond nanofabrication to high-precision electrical characterization. This second
laboratory provides multiple systems for extensive device testing at variable temperatures, in magnetic fields, and under
optical illumination.
CFN Users have full access to our state-of-the-art toolset for carrying out their proposed research projects. The Nanofabrication
Facility staff has extensive experience in thin-film device fabrication and electrical characterization, and is readily available
for training and to collaborate on new process development.
Capabilities
Lithography
The Nanofabrication Facility features lithography by electron-beam, ultraviolet light, and nanoimprint methods providing the
capability to pattern from 10’s of nanometers up to 100’s of microns over large sample areas.
Electron Beam Lithography
Contact: Aaron Stein (stein@bnl.gov)
- JEOL JBX-9300FS (at Alcatel-Lucent), NPGS system
Electron beam lithography at both 100 keV and 30 keV is available with patterning of feature sizes as small as 20 nm.
The JEOL 9300FS provides capability for large area exposures and sub-20 nm overlay and stitching accuracy.
Optical Lithography
Contact: Don Elliott (elliott@bnl.gov)
- Karl Suss MJB-3 UV Mask Aligner
UV exposure of resist at 365-400nm wavelengths. Substrate sizes range from small chips to 3-inch diameter wafers. Pattern resolution
as small as 1um using four-inch square masks.
Nanoimprint Lithograrphy
Contact: Aaron Stein (stein@bnl.gov)
- Molecular Imprints Imprio 55
Uses step-and-flash imprint technology to replicate patterned quartz masters with UV curing. Step-and-repeat functionality allows
for large area (~mm^2) patterning of 20 nm features. Sub-micron alignment available.
Dual Scanning Electron Microscope / Focused Ion Beam System
Contacts: Fernando Camino (fcamino@bnl.gov)
Aaron Stein (stein@bnl.gov)
John Warren (warren@bnl.gov) (EDX and TEM analysis)
- A Helios Nanolab (FEI Company) dual beam system for ion-beam (gallium) and electron-beam patterning with a resolution below 100 nm,
and electron and ion-beam induced metal (Pt) deposition of user-defined submicron scale geometries. This system can also perform energy
dispersive x-ray (EDX) analysis spectroscopy, and high-accuracy sample manipulation used for high quality S/TEM sample preparation and
in-situ STEM imaging (via plug-in STEM detector) without breaking the chamber vacuum. The system achieves high resolution (~1 nm) SEM
and STEM imaging.
Thin-Film Deposition and Etch
Reactive Ion Etch
Contact: John Warren (warren@bnl.gov)
- An Oxford Instruments Plasmalab 100 uses an inductively coupled plasma (ICP) source for the high-speed, anisotropic plasma etching of silicon
and other materials. The system has demonstrated capability to etch vertical walls in silicon to a depth of 300 um at etch rates of 3 um / min
with an aspect ratio (width of feature to etch depth) of 50:1.
- A Trion Phantom III Reactive Ion Etcher is a general purpose plasma etch tool for etching thin films generally 1 um or less in thickness that
have been deposited on silicon or other equivalent wafers up to 6” in diameter. Many processes for etching thin layers of photoresist, metal,
semiconductors, or insulators are available.
Plasma Enhanced Chemical Vapor Deposition
Contact: John Warren (warren@bnl.gov)
- The Trion Orion III PECVD system is a plasma deposition tool used for the deposition of thin films on silicon wafers and other equivalent
substrates up to 6” in diameter. Current processes in use include the deposition of SiO2, Si3N4, and amorphous silicon films.
Thin Film Deposition
Contact: Aaron Stein (stein@bnl.gov)
- Two individual Kurt J. Lesker PVD 75 vacuum deposition systems are available for thin film sputter and electron beam deposition of a wide
variety of materials. The sputter deposition system contains has 3 targets for magnetron sputtering, shutter, rotational holder, and
substrate heater. The e-beam system uses a 4- pocket electron beam deposition source with automatic crucible indexing. A small
Denton evaporator is available for rapid-turn around deposition of metals.
Electrical Characterization
Contact: Fernando Camino (fcamino@bnl.gov)
- The electrical characterization laboratory contains three versatile probe stations.
- Signatone CM-170 probe station is ideal for routine electrical characterization at room temperature. It is reliable and straightforward to use.
- Rucker and Kolls probe station is suited for studying optoelectronic properties at room temperature. It is fitted with a solar spectrum simulator
and an optical monochromator.
- LakeShore HFTTP4 cryogenic probe station is designed for low-noise, DC to 50 MHz, measurements from 2 K up to 475 K under in-plane magnetic fields
up to 1 Tesla. Optical sources can be introduced through a viewport window or a fiber optic probe arm.
Last Modified: May 6, 2008
Please forward all questions about this site to:
Stephen Giordano.
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