PATENT ABSTRACT:
Multi-layered structures containing GaN on SOD (silicon/diamond/silicon) substrates are described. The unique substrate/epilayer combination can provide electronic materials suitable for high-power and opto-electronic devices without commonly observed limitations due to excess heat during device operation. The resulting devices have built-in thermal heat spreading capability that result in better performance and higher reliability.
BACKGROUND OF THE INVENTION:
Many electronic systems are being designed to accommodate high power transmitters that generate large thermal loads. Thus some semiconductor devices are limited in performance and end-of-life (EOL) reliability due to high device operating temperatures. High electron mobility transistor (HEMT) structures that use compound semiconductors provide high energy efficiency, but maximum performance is limited by thermal management problems during device operation. The critical reliability challenge is to minimize thermal energy near the transistor junction or channel. To improve energy transport, it is important to maximize thermal conductivity as close as possible to the active region of the transistor. Diamond provides excellent thermal conductivity, making diamond thin films ideal for dissipating heat from high power/high frequency semiconductor devices. It would be useful to use diamond films as heat spreaders in compound semiconductor devices, thus improving performance, durability, and lifetime for the devices. |
