268
*STTR Project: High Voltage Silicon Carbide Emitter Turn‑off
Thyristor--Solitronics
LLC, 2408 Chelmsford Court, Cary, NC
27518; 919‑623‑6649
Mr. Jerry Melcher,
Principal Investigator, jerry@solitronic.com
Dr. Jing Leng, Business Official, jing@solitronic.com
DOE Grant No. DE‑FG02‑07ER86327
Amount: $99,373
Research Institution
NC State University
NC
Advanced SiC-based
high-power switches are need for power conversion applications. This project will develop a 10 kV-18 kV
class, high voltage, SiC Emitter Turn-off (ETO) thyristor that maximizes the
capability of SiC materials while minimizing the effect of immature material
properties, such as poor oxide reliability and low surface mobility. The SiC ETO will result in the best
performance in terms of speed and conduction capability, and will be superior
to IGBT and MOSFET. The targeted device
will have 10-15 kV breakdown voltage, 5 to 10 kHz switching capability, and 100
A current rating. In Phase I, a large
current module will be developed, based on multichip module packaging.
Commercial Applications and other Benefits
as described by the awardee: The SiC thyristor-based switch should
significantly increase the power-vs-frequency capability of power electronics
technology. In turn, this product would
reduce utility costs associated with energy loss during the lifetime of the power
electronics equipment. The technology
also should find use in DoD applications that require
high power density, such as the power conversion system in a naval ship. In the commercial world, the technology
should lead to superior semiconductor switch products, along with high-power
electronics based on these switch products, thereby enhancing U.S.
competitiveness in power semiconductors .