NIST Technicalendar July 14 to July 18, 2008 The NIST Technicalendar is issued each Friday. All items MUST be submitted electronically from this web page by 12:00 NOON each Wednesday unless otherwise stated in the NIST Technicalendar. The address for online weekly editions of the NIST Technicalendar and NIST Administrative Calendar is: http://www.nist.gov/tcal/.

In this Issue: Meetings at NIST Meetings Elsewhere Announcements Talks by NIST Personnel NIST Web Site Announcements NIST Administrative Calendar (current)   NIST Vacancy Announcements (current)

Also available: Previous Issues of the Technicalendar Quick Technicalendar (current) Last week's Quick Technicalendar Last week's Technicalendar Detailed Search NIST Journal of Research (Current TOC) Change User Options

10:45 AM - Resonant X-ray Scattering Study of Rare-Earth Tetraborides

No Scheduled Events

No Scheduled Events

10:30 AM - Capillary Wave Dynamics in thin Bilayer Polymer Films
11:00 AM - Advanced Capabilities for Synchrotron Measurement Science and Technology
3:30 PM - Magnetic Materials: More Than What You See Everyday

9:00 AM - National Instruments Mobile Expo

7/14 -- MONDAY

10:45 AM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: Resonant X-ray Scattering Study of Rare-Earth Tetraborides
Resonant x-ray scattering has been one of the fascinating techniques to investigate microscopic nature of magnetic ordering and anisotropic charge distribution in strongly correlated system. In principle, the RXS process involves electric multipole transitions by exciting a core electron of a corresponding absorption edge of an element to an empty valence shell of intermediate state. Direct involvement of this valence electron state gives rise to an enhanced sensitivity to the target ion's 1)spin polarization and 2)anisotropic charge distributions like structural ATS and orbital ordering. On the other hand, RXS has been suggested as a more advantageous spectroscopic tool than a conventional absorption spectroscopy due to the unique element and site specificity. In this talk, it will be presented how two different RXS phenomena can be combined and how possibility of the spectroscopy can be realized in rare-earth tetraborides (RB4, R=Gd and Dy) which have magnetic order and anisotropic charge distribution due to structural ATS and quadrupole order. Moreover, a direct experimental evidence of the quadrupole-strain interaction which has been accepted phenomenologically as magneto-elastic properties will be presented.
Sungdae Ji , University of Virginia.
235 Bldg, Rm. E100. (NIST Contact: Jeff Lynn, 301-975-6246, jeffrey.lynn@nist.gov)


7/15 -- TUESDAY

No Scheduled Events

7/16 -- WEDNESDAY

No Scheduled Events

7/17 -- THURSDAY

10:30 AM - POLYMERS DIVISION SEMINAR: Capillary Wave Dynamics in thin Bilayer Polymer Films
Jyotsana Lal , Argonne National Laboratory.
224 Bldg, Rm. A312. (NIST Contact: Wen-li Wu, 301-975-6839, wenli@nist.gov)

11:00 AM - MATERIALS SCIENCE AND ENGINEERING LABORATORY LECTURE SERIES: Advanced Capabilities for Synchrotron Measurement Science and Technology
The NIST Synchrotron Methods Group develops and exploits new experimental methods, detectors, and physics approaches in synchrotron materials science to study the structure and chemical nature of diverse materials, in partnership with Industry, National Labs, and University researchers.  The Group operates a suite of three spectroscopy beamlines at the National Synchrotron Light Source at Brookhaven National Laboratory. The beamline measurement capabilities are used to accelerate the development of new and advanced functional materials enabled by unique synchrotron X-ray measurements and establish structure function relationships for rational materials design to promote innovation and industrial competitiveness.  To this end, we develop synchrotron X-ray measurement methods to measure structure and chemistry: (1) on the scale ranging from atomic to tens of nanometers, particularly for low concentrations of materials; (2) at the surface of individual nanoscale entities such as nanotubes and nanoparticles; (3) at specific locations; e.g., an interface in a multilayer device; and (4) under relevant conditions, e.g., temperature and pressure, that the material will be subjected to in use.  Materials currently under investigation include organic and inorganic electronics, model catalyst systems, polymer surfaces and interfaces, hard disk lubricants, self-assembled monolayers, and high temperature superconductors.  An overview of the NIST spectroscopy beamline suite, specialized measurement capabilities, and several examples of measurement results will be presented.   In particular, we will motivate and highlight our development of synchrotron-based variable kinetic energy x-ray photoemission spectroscopy for non-destructive depth profiling and, ultimately, 3D chemical imaging at the nanoscale.
Dan Fischer , Physicist.
Administration Bldg, Green Auditorium. (NIST Contact: Bill Boettinger, 301-975-6160, william.boettinger@nist.gov)

3:30 PM - SURF SUMMER SEMINAR SERIES: Magnetic Materials: More Than What You See Everyday
Electricity, sound, motors, information storage, sensors... Magnetic materials play an important role in these applications and are crucial for many aspects of modern life. Traditional applications of magnetic materials are based on the interaction between the magnetic materials and the electric fields generated by currents. Newer applications are based on the direct interaction between these materials and current. The 2007 Physics Nobel Prize for Giant Magnetoresistance is an example of this newer interaction. In this talk I describe the interactions between currents and magnetic fields and discuss some of the ways in which this interaction is exploited.
Mark Stiles , Center for Nanoscale Science & Technology.
Administration Bldg, Green Auditorium. (NIST Contact: Anita Sweigert, 301-975-4201, anita.sweigert@nist.gov)
Special Assistance; Contact A. Sweigert a week in advance.


7/18 -- FRIDAY

9:00 AM - CUSTOMER ACCESS AND SUPPORT DIVISION SEMINAR: National Instruments Mobile Expo
National Instruments has taken to the road with the new NI Mobile Expo, a touring exhibition of the latest technologies for automated test applications. The NI Mobile Expo will be visiting NI customers across the country with a collection of demonstrations in areas such as hardware-in-the-loop, mechanical, DC, RF, and mixed-signal test. We hope you take this opportunity to join NI field engineers for these live demonstrations when the NI Mobile Expo visits your location.
Alan Loprete , National Instruments Field Engineer.
the Administration Bldg, Rm. Outside. (NIST Contact: John Quintavalle, 301-975-2297, johnq@nist.gov)
Special Assistance Available


ADVANCE NOTICE

7/21/08 10:30 AM - ATOMIC PHYSICS DIVISION SEMINAR: Next-Generation Infrared Photodetectors Using Novel InAs/GaSb Superlattices
The InAs/GaSb superlattice photodetector is an emerging technology in the mid-infrared detection field, with performance that rivals the state-of-the-art HgCdTe photodiodes in the long wavelength infrared range. Combining the advantages of quantum engineering and advanced III-V molecular beam expitaxy (MBE) growth techniques, this technology is a promising candidate for next generation mid-infrared focal plane arrays. In this talk, I will first show a novel design of InAs/GaSb superlattice photovoltaic detectors that use intersubband relaxation as the carrier collecting mechanism; this design aims at reducing the dark leakage current. Moreover, I will evaluate fundamental figures of merit including the dark leakage current and quantum efficiency. By fine-tuning the sidewall mesa etching and sample preparation, we can reduce the sidewall leakage current.
Shin Mou , IBM.
Physics Building, Room B145. (NIST Contact: Neil Zimmerman, 301-975-5887, neil.zimmerman@nist.gov)

7/21/08 10:30 AM - CNST ELECTRON PHYSICS GROUP SEMINAR: Low energy-spread ion beams from a trapped atomic gas
Pulsed and continuous ion beams are used in applications such as focused ion beams. The smallest achievable spot size in focused ion beam technology is limited by the monochromaticity of the ion source. Here we present energy spread measurements on a new source concept, the ultracold ion source [1,2]. It produces ion beams by near-threshold ionization of laser cooled atoms. In recent detailed particle tracking simulations we found that the brightness of such a source can compete with that of the industry standard liquid metal ion source (LMI) but offers the advantage of reduced longitudinal energy spread [1]. In the experiment, rubidium atoms are captured in a magneto-optical trap inside an accelerator structure where they are ionized by a pulsed laser in a DC electric field. The resulting cold ion bunch is accelerated towards a multi-channel plate detector where the time-dependent ion current is measured. The relative spread in time of flight to the detector is a good measure for the relative longitudinal energy spread in the bunch. Two order of magnitude lower energy spread is achieved compared to the liquid-metal ion source. Bunches with an energy of only 2 eV are produced with an rms energy spread as low as 0:01 eV.
Edgar J. Vredenbregt , Dr./Department of Applied Physics, Eindhoven University of Technology, The Netherlands.
217 Bldg., H107 Rm.. (NIST Contact: Jabez McClelland, 301-975-3721, jabez.mcclelland@nist.gov)

7/25/08 11:00 AM - CNST ELECTRON PHYSICS GROUP SEMINAR: Focused ion and electron beam nanofabrication: new developments
Both focused ion beams and electron beams can be used for direct, maskless, resistless nanofabrication as well as for lithography. So far the direct fabrication has been limited to applications such as photomask repair, circuit restructuring, failure analysis, and the creation of various highly specialized structures. Recent developments in maskless fabrication, so far aimed mainly at resist exposure, suggest that this picture might change. For example, IMS in Vienna, Austria is developing an instrument that can be characterized as an ion beam or electron beam dot matrix printer. The total current on the sample available from this kind of instrument is at least three orders of magnitude larger than from a single beam instrument. This may lead to new applications of charged particle beam fabrication, as well as enable applications considered in the past but rejected because of very low throughput. An example of one such application is the direct writing of the identity in RFID tags using ion beam implantation. Recently we have also shown that electron beams can be used to deposit relatively pure platinum from an inorganic precursor gas, Pt(PF3)4. Such metal deposits can be used as contacts to carbon nanotubes, semiconductor nano wires, organic fibers, or other structures where conventional lithography is impractical.
John Melngailis , Dept. of Electrical and Computer Engineering, University of Maryland, john.melngailis@nist.gov.
217 Bldg., H107 Rm.. (NIST Contact: Jabez J. McClelland, 301-975-3721, jabez.mcclelland@nist.gov)

7/25/08 1:30 PM - OFFICE OF THE DIRECTOR, NIST SEMINAR: Neutron Imaging for the Hydrogen Economy
This lecture will provide an overview of the tremendous advancements made in slow neutron imaging during the past decade. Neutron imaging is playing a significant role in the emerging hydrogen economy, in particular, in the development of low temperature fuel cells that may power consumer electronics, homes, and automobiles of the future. The lecture will highlight the contributions and impacts of neutron imaging in this important area of application.
Muhammad Arif , Physics Laboratory.
Administration Bldg, Green Auditorium. (NIST Contact: John Messina, 301-975-4284, john.messina@nist.gov)
Special Assistance Available

7/28/08 10:30 AM - CNST ELECTRON PHYSICS GROUP SEMINAR: Electron beam projection nanopatterning using crystal lattice images obtained from high resolution transmission electron microscopy
The fabrication of nanometer-scale features such as quantum dots and quantum wires, in a controllable and economically viable manner is one of essential requirements for the production of highly functional devices. Here, we propose a new electron beam projection lithography technique for patterning nanometer scale, periodic structures. The novelty of this technique is that the crystalline lattice image observed by high resolution transmission electron microscopy (HRTEM) is employed as the ultimate mask to define nanometer scale pattern. Namely, the Ångstrom-scale lattice image of a crystalline material is magnified within the electron microscope, and is projected onto an electron-beam-resist-coated substrate. This technique is tentatively called AIPEL (Atomic Image Projection Electron-beam Lithography). To experimentally prove this concept, we developed the specially designed hardware based on the modification of a 200 kV TEM with a field emission gun (JEM-2010F, JEOL Ltd.). The patterning lenses for controlling the patterning magnification (50 to 300 times) were inserted below objective lens, and the wafer stage for loading the resist-coated wafer was installed in the lithography plane, as shown in Fig. 1. Using this technique, we successfully fabricated periodic arrays of dot and line patterns with feature sizes of about 25 nm using single-crystalline Si as the mask materials. Moreover, the HRTEM images which can be obtained from crystalline samples can be far more complicated. Fig. 2 shows the various patterned structures obtained from crystalline ?-silicon nitride (?-Si3N4) sample with hexagonal crystal system (P63/m). The patterning results of these complicated and interesting nanostructures not only demonstrate the uniqueness of this method but also open up a whole new area of investigating a variety of electrical, optical, and magnetic properties of nanostructures.
Ki Bum Kim , Professor /Seoul National University-Dept. of Materials Sci. and Eng., Seoul, Korea, kibum@snu.ac.kr.
217 Bldg., H107 Rm.. (NIST Contact: Jabez J. McClelland, 301-975-3721, jabez.mcclelland@nist.gov)

7/29/08 10:30 AM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Nanoscale measurements for photovoltaics: advances and challenges
The quest to control semiconductor morphologies at the nanoscale has been largely motivated by the prospect of obtaining interesting new properties differing from the bulk. In the case of photovoltaic applications, bandgap modification can be obtained from quantum confinement below the exciton Bohr radius in nanodots, and charge mobility can significantly increase in nanowires and nanorods, because of reduced grain boundaries. The discovery of new photovoltaic structures such as bulk organic heterojunctions and semiconductor nanowires has also created the need for new characterization methods than can probe the local structure at the scale of exciton diffusion length, and correlate it with overall device power conversion efficiency. Nanostructured semiconductors such as single wall carbon nanotube transparent conducting films, Zinc oxide nanotips arrays, and Germanium nanowires coatings have been developed at the Rutgers Institute for Advanced Materials, Devices and Nanotechnologies (IAMDN). We will present their evaluation in photovoltaic devices, and illustrate some of the challenges that such measurements represent. For instance, photoelectrical measurement of nanosized objects is made difficult by the need to make electrical contact to them. A preferred approach is to generate phase-locked photocurrent and photoluminescence with a nanosized spot of chopped light, and build an image by mapping the sample. We will report our initial results towards this goal with photocurrent microscopy on silicon solar cells, and discuss strategies to increase resolution from tens of microns to tens of nanometers. Finally, we expose our plans to measure local photoluminescence quenching and exciton lifetime in nanoscale photovoltaic objects. References: Aurelien Du Pasquier, Husnu Emrah Unalan, Alokik Kanwal and Manish Chhowalla, Applied Physics Letters 87,1,(2005). A. D. Pasquier, H. Chen, G. Saraf, J. Zhong, Y. Lu, Appl. Phys. Lett. 89, 253513 (2006). Hanhong Chen, Aurelien Du Pasquier, Gaurav Saraf, Jian Zhong and Yicheng Lu, Semicond. Sci. Technol. 23 045004 (2008). Aurelien Du Pasquier, Daniel D. T. Mastrogiovanni, Lauren A. Klein, Tong Wang, and Eric Garfunkel, Appl. Phys. Lett. 91, 183501 (2007). http://iamd.rutgers.edu/
Aurelien Pasquier , Research Assistant Professor, Rutgers University.
Bldg. 217, Rm. H107. (NIST Contact: Nikolai Zhitenev, 301-975-6039, nikolai.zhitenev@nist.gov)

---

MEETINGS ELSEWHERE


7/14 -- MONDAY

No Scheduled Events

7/15 -- TUESDAY

No Scheduled Events

7/16 -- WEDNESDAY

No Scheduled Events

7/17 -- THURSDAY

No Scheduled Events

7/18 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

No Scheduled Events

---

TALKS BY NIST PERSONNEL

MARSHALL, J. : STATUS OF THE MEMS STANDARDIZATION PROJECT AT NIST: JULY 2008.
SEMI's MEMS Materials Characterization Task Force Meeting, Marriott Hotel, San Francisco, CA USA, 7/14.

STAYMATES, M. : POLYMER MICROSPHERE PARTICLE STANDARDS CONTAINING HIGH EXPLOSIVES.
35th Annual Meeting and Exposition of the Controlled Release Society, New York, New York, 7/14.

CLOTEAUX, B. : GENERATING NETWORK MODELS USING THE S METRIC.
2008 World Congress in Computer Science, Computer Engineering and Applied Computing, Las Vegas, NV, 7/15.

---

ANNOUNCEMENTS

INSTITUTIONAL REVIEW BOARD (IRB)
Research Involving Human Subjects Individuals at NIST who wish to do, or wish to sponsor any research involving human subjects, including human cells or tissue, are required by Federal regulations to obtain approval before embarking on the research. This includes: -Research conducted here at NIST by NIST employees or guest workers -Collaborative research with others outside of NIST, including CRADAs and other agreements -Research funded by NIST through grants, contracts, or cooperative agreements The current procedures for approving projects involving human subjects can be found in the NIST Administrative Manual Subchapter 14.01, Protection of Human Subjects (http://www-i.nist.gov/admin/mo/adman/1401.htm). These procedures ensure that the proposed research is in compliance with the applicable DOC Regulations, 15 CFR 27 http://www.access.gpo.gov/nara/cfr/waisidx_99/15cfr27_99.html. NIST's Institutional Review Board (IRB) reviews and approves those research proposals that require review except in cases where an outside IRB has jurisdiction. The NIST IRB is described in Administrative Manual Subchapter 3.01, Appendix A (http://www-i.nist.gov/admin/mo/adman/301irb.htm). These regulations are broader than many people realize, and involve more than, for example, just invasive medical procedures. They can also cover volunteers participating in questionnaires and surveys and people testing computer software. All research involving human subjects and being conducted at an institution outside of NIST that has not been determined to be exempt from the Federal policy by the appropriate NIST OU Director needs to have an approval from that institution's Institutional Review Board (IRB) or from an IRB that is currently registered with the Office for Human Research Protections (OHRP), DHHS. In addition, the institution conducting the research involving human subjects must have a current Federal-wide Assurance (FWA) on file with OHRP. The outside IRB's approval will be subject to concurrence by NIST. The NIST IRB Chair reviews the documentation provided by the outside researchers and IRB and recommends approval or disapproval to the NIST Deputy Director, with the concurrence of the Chief Counsel for NIST. Research being conducted at NIST by NIST employees that has not been determined to be exempt by the appropriate NIST OU Director must be reviewed by the NIST IRB (formerly called The NIST Human Research Ethics Committee). The use of human subjects in the project may not begin until the Chief Counsel for NIST has concurred with the IRB's recommendation to approve the project and the Deputy Director of NIST has approved it. Signatures required before the proposal is sent to the NIST IRB include that of the Group Leader and Division Chief (who approve the scientific merit of the research), and the Laboratory Director (who determines whether it is exempt). An OU Director's exemption determination must receive concurrence from the Chief Counsel for NIST and then be forwarded to the NIST IRB Acting Chair, Dr. Lisa R. Karam for noting and filing. For more information, contact the NIST IRB Secretary, Janet Brumby, (301) 975-3189 or email: brumby@nist.gov or visit our website at: http://www-i.nist.gov/director/IRB/ (For best viewing of all pages associated with this website, your monitor should have a display setting of 800 by 600 and in Microsoft Internet Explorer). All correspondence should be mailed to Mail Stop 1710.
NIST Contact: Janet Brumby, 301-975-3189, janet.brumby@nist.gov

2008 WORLD STANDARDS DAY PAPER COMPETITION
The U.S. standards community will celebrate World Standards Day on Thursday, October 23, 2008, at the Ronald Reagan Building and International Trade Center in Washington, DC. The theme for this year's celebration, "Intelligent and Sustainable Buildings," recognizes the critical role of standards and conformity assessment programs in ensuring safety requirements; facilitating coordination among contractors, builders, engineers, and architects; and incorporating new technologies in design and construction. In conjunction with this year's event, the 2008 World Standards Day sponsors, including NIST will hold the annual paper competition. The 2008 World Standards Day Paper Competition invites papers that use specific examples to show ways that standards and conformity assessment programs are used for intelligent and sustainable buildings. Paper competition winners will be announced and given their awards at the US celebration of World Standards Day. The first place winner will receive a plaque and $2,500. Second and third place winners will receive $1,000 and $500, respectively, along with a certificate. In addition, the winning papers will be published in SES's journal, "Standards Engineering." ELIGIBILITY: The competition is open to U.S.-based individuals in the private sector, government, or academia. Papers may be co-authored. RULES: Entries must be original and not previously published. NIST papers must be processed through WERB or BERB. All paper contest submissions must be received with an official entry form by midnight on August 29, 2008, by the SES Executive Director, 13340 SW 96th Avenue, Miami, Florida, 33176. Complete details and official entry forms are available on the SES website www.ses-standards.org (follow the link for "2008 WSD Paper Competition.") For additional information about the U.S. Celebration of World Standards Day, or to register for the event, please visit www.wsd-us.org.
NIST Contact: Mary Donaldson, 301-975-6197, mary.donaldson@nist.gov

PUBLICATIONS PRINTING DEADLINE AUGUST 14, 2008
August 14 is the last day in FY 2008 to submit materials using FY 2008 funds to the Electronic Information and Publications Group (EIPG) for printing at the Department of Commerce or Government Printing Office. To assure timely processing, bring your Editorial Review Board-approved document or administrative printing job and appropriate paperwork to the EIPG office by close of business on Thursday, August 14, 2008. The office is located on the mezzanine floor of the NIST Research Library in the Admin Building, Room E220. Questions? Ilse Putman, x2780 or Barbara Silcox, x2146.
NIST Contact: Ilse Putman, 301-975-2780, ilse.putman@nist.gov

VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .

---

NIST WEB SITE ANNOUNCEMENTS

No Web Site announcements this week.

---

For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

---

NVL Webmaster