Nanoelectronic Device Metrology
Contact: Curt A. Richter
The overall goal of the Nanoelectronic Device Metrology (NEDM) Project is to develop the metrology that will help enable emerging information processing technologies (such as Si-based quantum devices and molecular electronics) to extend electronic device performance improvements beyond the incremental scaling of Complementary Metal Oxide Semiconductor (CMOS) devices. This involves determining the critical metrology needs for these exploratory technologies. One specific goal is to develop test structures and methods to measure the electrical properties of small ensembles of molecules reliably. Another targeted goal is to develop the precise metrology and characterization methods required for the systematic characterization of Si-based nanoelectronic devices. Both of these goals involve the development of an integrated and interdisciplinary suite of sophisticated measurement capabilities that enable correlations between nanoelectronic device performance and the structure, properties, and chemistry of critical materials and interfaces within the devices.
