WPCP9 .RZs拨xUNuqtk$#&G5zUEHhuocVQZwy9_sL(ֻ½(ꞇu+'yۤz[MWdkV*cj2O:Hx[FSQ͞) !ƭ+ՠ$w+1LǕp @Ie2&h="fAd)vKptV1UK]!v*Щ͘(`fuBհ :ќV6BI R=:op=az )-KY)H9F{4]#Uv}qn3# `' IFMl㤎9g9!iíz +[\vՍmW*:=_Cڬ͟Io$ Wu^r%#߾dPX4#lT-C)E#pUkN1 % 0(UN 0DUH3{ 0DqUHw4$ m&U,=UNi^  0~U>ANUNU@U<UNKU*UN > \O: 0NXI ^Z XYTT VY V ^RcRZ Da ^ \@_XZXQ Z V! \Y! ^! V" \i"X"Z#Rw#X#X!$Zy$Z$ V-%R%X% B*-&ZW& R&N'XQ'Z' f(bi(X(Z#)X})Z)X/*Z*X*Z9+X+Z+ \E,X, V,RO- \-X- ^U.Z. ^ /Zk/X/ X0Tu0:0X1 ([1$1 R1Z1TS2@2N2 ^53Z3:3X'4$4Z4T4@Q5X5 V5R?6 t6p7 Zu7V7 \%8X8Z88888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888888 B39HP LaserJet 4200 PCL 60(hH  Z 6Times New Roman RegularX($')x  Z 6Times New Roman Regular '  _JXXUJCommerceControlList@BBBSupplementNo.1toPart774666(#Category3"page  1  (3$ !  +   0Times New Roman Bold  )  _ X=XXX UX X=U UExportAdministrationRegulations=(#April18,2008# UUi#(3$ !  +hH  0Times New Roman BoldH8z3|x.U $Tahoma(hH  Z 6Times New Roman Regularq8s V& 8Document[8]Document Style0..8` ..` \  `&Times New Roman 6Times New Roman Regular'n2 Z(Times New Roman \  `$Times NewRoman(9 Z6Times New Roman Regular%2A`Arial'ON  Z 6Times New Roman Regular b.1.a.4.c. Being space b.4.b. Rated for operation at frequencies b.1.a.4.c. Being space   (O$ b.4.b. Rated for operation at frequencies b.8. Microwave power amplifiers containing b.8. Microwave power amplifiers containing e.1.c. Space qualified and radiation e.1.c. Space qualified and radiation e.1.c. Space qualified and radiation3A101 Electronic equipment, devices and3A201 Electronic components, other than3A991 Electronic devices and components not3A101 Electronic equipment, devices and3A201 Electronic components, other than3A991 Electronic devices and components not g.2. Being space qualified.3A292 Oscilloscopes and transient recorders3A992 General purpose electronic equipment g.2. Being space qualified.3E001 Technology according to the General3A292 Oscilloscopes and transient recorders3A992 General purpose electronic equipmenta. Analog-to-digital converters, usable ina. Analog-to-digital converters, usable in3E001 Technology according to the General3E201 Technology according to the Generale.2. High energy storage capacitors, as e.3. Superconductive electromagnets and3E001 Technology according to the General3E201 Technology according to the Generale.2. High energy storage capacitors, as e.3. Superconductive electromagnets and3E001 Technology according to the General3E201 Technology according to the General3E201 Technology according to the General3A227 High-voltage direct current power3A227 High-voltage direct current power3E001 Technology according to the General&  d d3E201 Technology according to the General3A226 High-power direct current power3A226 High-power direct current power3E001 Technology according to the General3E201 Technology according to the Generalk. Superconductive electromagnets or solenoidsk. Superconductive electromagnets or solenoids3E001 Technology according to the General3E201 Technology according to the General3E001 Technology according to the General3E201 Technology according to the General3E001 Technology according to the General3E201 Technology according to the General3E001 Technology according to the General3E201 Technology according to the General3E001 Technology according to the General3E201 Technology according to the General3E292 Technology according to the General3E292 Technology according to the General3A225 Frequency changers (also known as3A225 Frequency changers (also known as3A233 Mass spectrometers, other than those3A233 Mass spectrometers, other than those3B991 Equipment not controlled by 3B001 for3B991 Equipment not controlled by 3B001 for3B992 Equipment not controlled by 3B002 for3B992 Equipment not controlled by 3B002 for3E001 Technology according to the General b.1.b. Equipment specially designed for b.1.b. Equipment specially designed for b.1.a.4.c. Being space b.4.b. Rated for operation at frequencies b.6. [RESERVED] b.6. [RESERVED]3D101 Software specially designed or b.8. Microwave power amplifiers containing e.1.c. Space qualified and radiation g.2. Being space qualified.3D101 Software specially designed or3E101 Technology according to the General3E101 Technology according to the General b.1.a.4.c. Being space b.4.b. Rated for operation at frequencies b.6. [RESERVED] b.8. Microwave power amplifiers containing e.1.c. Space qualified and radiation g.2. Being space qualified.3E001 Technology according to the Generalg. Electronic vacuum tubes operating atg. Electronic vacuum tubes operating at3A999.a Frequency changers capable of operating in the3A999.a Frequency changers capable of operating in the3A992.a Electronic test equipment, n.e.s.3A992.a Electronic test equipment, n.e.s.3D991 Software specially designed for the3D991 Software specially designed for the3E201 Technology according to the General d !  _   (X(#(#( +CATEGORY3ELECTRONICS (  *,X,xXX*A.SYSTEMS,EQUIPMENTAND  COMPONENTS  Ѐ    1  &w%XX  Note1: Thecontrolstatusofequipmentand   componentsdescribedin3A001or3A002,other  r thanthosedescribedin3A001.a.3to3A001.a.10 r J or3A001.a.12,whicharespeciallydesignedfor J " orwhichhavethesamefunctionalcharacteristics "  asotherequipmentisdeterminedbythecontrol   statusoftheotherequipment.     Note2: Thecontrolstatusofintegrated Z  circuitsdescribedin3A001.a.3to3A001.a.9or \4  3A001.a.12thatareunalterablyprogrammedor 4  designedforaspecificfunctionforother    equipmentisdeterminedbythecontrolstatusof  theotherequipment.    N.B.: Whenthemanufacturerorapplicant lD cannotdeterminethecontrolstatusoftheother F equipment,thecontrolstatusoftheintegrated  circuitsisdeterminedin3A001.a.3to3A001.a.9  and3A001.a.12.Iftheintegratedcircuitisa  silicon-based"microcomputermicrocircuit"or ~ _microcontroller_Ԁmicrocircuitdescribedin ~V 3A001.a.3havinganoperand(data)wordlength V. of8bitorless,thecontrolstatusoftheintegrated . circuitisdeterminedin3A001.a.3.   3A001Electroniccomponents,asfollows(see !f  ListofItemsControlled).  f">!  LicenseRequirements  $#   ReasonforControl:NS,MT,NP,AT %% Control(s)0 4 0` 440 ` ` 0  0  0  CountryChartv'N!' NSappliestoentireentry0 0  NSColumn2&)") &w%%&wMTappliesto3A001.a.1.a0   MTColumn1#&w%%&w #&w%%&w*$+   whenusablein missiles;    +%, andto3A001.a.5.awhen0 ,^&-    designedormodifiedfor (- militaryuse,hermetically . sealedandratedforoperation / inthetemperaturerangefrom 0 below54Ctoabove+125C.  `1 #&w%%&wW #NPappliestopulsedischarge0 x NPColumn18 3x(#x(# capacitorsin3A001.e.2  4 andsuperconducting  5 solenoidalelectromagnets  6 in3A001.e.3thatmeetor p7 exceedthetechnicalparameters pH 8 in3A201.aand3A201.b, H 9 respectively   : ATappliestoentireentry0 L 0xL(#L(#ATColumn1 <x(#x(#  LicenseExceptions  X>  D _LVS_:  N/AforMTorNP 0@  D  p   Yesfor: A  D  p   $1500:3A001.c B  D  p 0  $3000:3A001.b.1,b.2,b.3,b.9,.d,.e, C .f,and.ghD(#(#  D  p 0  $5000:3A001.a(excepta.1.aand h@E a.5.awhencontrolledforMT),and @F .b.4tob.7  G(#(#  D _GBS_:0  Yesfor3A001.a.1.b,a.2toa.12 H (except.a.5.awhencontrolledfor I MT),b.2,b.8(exceptfor_TWTAs_ xJ exceeding18_GHz_),b.9.,and.g.xPK(#(# .0 D _CIV_:0D(#D(#Yesfor3A001.a.3,a.4,a.7,anda.11. P (L(#(#  D &w%%&wListofItemsControlled  "N  D Unit:  Number. #P 0 D RelatedControls:#&w%%&w#1.)Thefollowing $`Q commoditiesareundertheexportlicensing `%8R authorityoftheDepartmentofState, 8& S DirectorateofDefenseTradeControls(22 ' T _CFR_Ԁpart121)when"spacequalified"and '!U operatingatfrequencieshigherthan31.8 ("V _GHz_:helixtubes(travelingwavetubes )p#W (_TWT_))definedin4 )!O  5  3A001.b.1.a.4.c6!O  7 "; p*H$X microwavesolidstateamplifiersdefinedin H+ %Y 4" D!O  5  3A001.b.4.b6!O  7 Ԁtravelingwavetubeamplifiers  ,%ZD(#D(# _(TWTA)definedin4$ !O  5  3A001.b.86!O  7 ;and ( derivativesthereof;2.)"Spacequalified"and  radiationhardenedphotovoltaicarrays,as  definedin4& !O  5  3A001.e.1.c6!O  7 N B,havingsiliconcellsor  havingsingle,dualortriplejunctionsolar  ` cellsthathavegalliumarsenideasoneofthe ` 8 junctions,aresubjecttotheexportlicensing 8  authorityoftheDepartmentofCommerce.   Allother"spacequalified"andradiation   hardenedphotovoltaicarraysdefinedin    4' !O  5  3A001.e.1.c6]!Oq  7 Ԁandspacecraft/satellite p  concentratorsandbatteriesareunderthe pH  exportlicensingauthorityoftheDepartment H  ofState,DirectorateofDefenseTrade    Controls(22CFRpart121).&w%%&w(3)The   followingcommoditiesareundertheexport   licensingauthorityoftheDepartmentofState,   DirectorateofDefenseTradeControls(22 X CFRpart121):(a)Radiation-hardened X0 microelectroniccircuitscontrolledby 0 CategoryXV(d)oftheUnitedStates  MunitionsList(USML);and(b)All  specificallydesignedormodifiedsystemsor  subsystems,components,parts,accessories, h attachments,andassociatedequipment h@ controlledbyCategoryXV(e)oftheUSML.#&w%%&w#Ԁ @ ЀSeealso4+ !O  5  3A1016 !O. s  7 \ ,4, !O  5  3A2016 !O s  7 !,and4- r!O  5  3A9916v!!O!s  7f!. 0  RelatedDefinitions:Forthepurposesof  integratedcircuitsin3A001.a.1,5x103  Gy(Si)=5x105Rads(Si);5x106Gy(Si)/s x =5x108Rads(Si)/s.Forpurposesof xP photovoltaicarraysin3A001.e.1.c,anarray P ( predominatelyconsistsof:asubstrate;solar (!  cellshavingsiliconcellsorhavingsingle, "! dual,andortriplejunctionsolarcellsthat "" havegalliumarsenideasoneofthejunctions; ## coverglass;ultravioletcoating(s);and $`$ bondingagent(s).Spacecraft/satellite:solar `%8% concentrators,powerconditionersandor 8& & controllers,bearingandpowertransfer ' ' assembly,andordeployment '!( hardware/systemsarecontrolledunderthe (") exportlicensingauthorityoftheDepartment )p#* ofState,DirectorateofDefenseTrade p*H$+ Controls(22CFRpart121).XlX%&wXlXXXl < H+ %,   #&w%XXl&#Items:  ,%- Ї#&w%%&w&#&w%%&wa.Generalpurposeintegratedcircuits,as (- follows: .  D Note1: Thecontrolstatusofwafers(finished 0 orunfinished),inwhichthefunctionhasbeen  d1 determined,istobeevaluatedagainstthe d <2 parametersof3A001.a. < 3  D Note2: Integratedcircuitsincludethe  5 followingtypes:  6  D Monolithicintegratedcircuits; xP 8  D Hybridintegratedcircuits; P( 9  D Multichipintegratedcircuits; ( : 0 D Filmtypeintegratedcircuits,including  ; silicon-on-sapphireintegratedcircuits; <D(#D(#  D Opticalintegratedcircuits.  =  D a.1.Integratedcircuits,designedorratedas `8? radiationhardenedtowithstandanyofthe 8@ following: A  D  p a.1.a.Atotaldoseof5x103Gy(Si),or C higher; pD  D  p a.1.b.Adoserateupsetof5x106Gy H F (Si)/s,orhigher;or  G  D  D  p a.1.c.Afluence(integratedflux)of I neutrons(1MeVequivalent)of5x1013n/cmor J higheronsilicon,oritsequivalentforother XK materials; X 0L  D  p Note: 3A001.a.1.cdoesnotapplyto "N MetalInsulatorSemiconductors(MIS). "O  D a.2. Microprocessormicrocircuits, $lQ  microcomputermicrocircuits,microcontroller l%DR microcircuits,storageintegratedcircuits D& S manufacturedfromacompoundsemiconductor, ' T analog-to-digitalconverters,digital-to-analog '!U converters,electro-opticalor opticalintegrated ("V circuitsdesignedfor signalprocessing,field )|#W programmablelogicdevices,neuralnetwork |*T$X integratedcircuits,customintegratedcircuitsfor T+,%Y whicheitherthefunctionisunknownorthe ,,&Z controlstatusoftheequipmentinwhichthe ( integratedcircuitwillbeusedinunknown,Fast  FourierTransform(FFT)processors,electrical  erasableprogrammableread-onlymemories  (EEPROMs),flashmemoriesorstatic  ` random-accessmemories(SRAMs),havinganyof ` 8 thefollowing: 8      a.2.a.Ratedforoperationatanambient   temperatureabove398K(125$C);        a.2.b.Ratedforoperationatanambient pH  temperaturebelow218K(-55$C);or H      a.2.c.Ratedforoperationovertheentire   ambienttemperaturerangefrom218K(-55$C)to   398K(125$C);     Note: 3A001.a.2doesnotapplytointegrated X0 circuitsforcivilautomobileorrailwaytrain 4  applications.     a.3. Microprocessormicrocircuits,   micro-computermicrocircuitsand l microcontrollermicrocircuits,manufacturedfrom lD acompoundsemiconductorandoperatingata D clockfrequencyexceeding40MHz;    Note: 3A001.a.3includesdigitalsignal  processors,digitalarrayprocessorsanddigital  coprocessors. X   a.4.Storageintegratedcircuitsmanufactured 0!  fromacompoundsemiconductor; "!   a.5.Analog-to-digitalanddigital-to-analog ## converterintegratedcircuits,asfollows: $h$     a.5.a.Analog-to-digitalconvertershaving @& & anyofthefollowing: ' '      4 a.5.a.1. Aresolutionof8bitormore, (") butlessthan10bit,withanoutputrategreater )x#* than500millionwordspersecond; x*P$+      4 a.5.a..2Aresolutionof10bitor (,&- more,butlessthan12bit,withanoutputrate (- greaterthan200millionwordspersecond; .  D  p   a.5.a.3.Aresolutionof12bitwithan 0 outputrategreaterthan105millionwordsper  `1 second; ` 82  D  p   a.5.a.4.Aresolutionofmorethan12  4 bitbutequaltoorlessthan14bitwithanoutput  5 rategreaterthan10millionwordspersecond;or  6  D  p   a.5.a.5.Aresolutionofmorethan14 pH 8 bitwithanoutputrategreaterthan2.5million H 9 wordspersecond.   :  D  p a.5.b.Digital-to-analogconverterswitha  < resolutionof12bitormore,anda settlingtime  = oflessthan10ns; X>  D TechnicalNotes:  0@  D  p 1.Aresolutionofnbitcorrespondstoa B quantizationof2nlevels. C  D  p 2.Thenumberofbitsintheoutputword h@E isequaltotheresolutionofthe @F analogue-to-digitalconverter. G  D  p 3.  Theoutputrateisthemaximum I outputrateoftheconverter,regardlessof xJ architectureoroversampling.Vendorsmayalso xPK refertotheoutputrateassamplingrate, P (L conversionrateorthroughputrate.Itisoften (!M specifiedinmegahertz(MHz)ormegasamples "N persecond(MSPS). "O  D  p 4.  Forthepurposeofmeasuringoutput $`Q rate,oneoutputwordpersecondisequivalentto `%8R oneHertzoronesamplepersecond. 8& S  D a.6.Electro-opticaland opticalintegrated '!U circuitsdesignedfor signalprocessinghaving ("V allofthefollowing: )p#W  D  p a.6.a.Oneormorethanoneinternal H+ %Y  laserdiode;  ,%Z Ї    a.6.b.Oneormorethanoneinternallight ( detectingelement;and      a.6.c.Opticalwaveguides;    a.7.Fieldprogrammablelogicdeviceshaving ` 8 anyofthefollowing: 8      a.7.a.Anequivalentusablegatecountof   morethan30,000(2inputgates);        a.7.b.Atypical basicgatepropagation pH  delaytimeoflessthan0.1ns;or H      a.7.c.Atogglefrequencyexceeding133   MHz;       Note: 3A001.a.7includes:Simple X ProgrammableLogicDevices(SPLDs),Complex \4 ProgrammableLogicDevices(CPLDs),Field 4  ProgrammableGateArrays(FPGAs),Field   ProgrammableLogicArrays(FPLAs),andField  ProgrammableInterconnects(FPICs).      N.B.: Fieldprogrammablelogicdevices lD arealsoknownasfieldprogrammablegateor H  fieldprogrammablelogicarrays.   Ѐ  a.8.[RESERVED]    a.9.Neuralnetworkintegratedcircuits; X   a.10.Customintegratedcircuitsforwhichthe 0!  functionisunknown,orthecontrolstatusofthe "! equipmentinwhichtheintegratedcircuitswillbe "" usedisunknowntothemanufacturer,havingany ## ofthefollowing: $h$     a.10.a.Morethan1,000terminals; @& &     a.10.b.Atypical basicgatepropagation '!( delaytimeoflessthan0.1ns;or (")     a.10.c.Anoperatingfrequencyexceeding x*P$+ 3GHz; P+(%,  (,&-  D a.11.Digitalintegratedcircuits,otherthan (- thosedescribedin3A001.a.3to3A001.a.10and . 3A001.a.12,baseduponanycompound / semiconductorandhavinganyofthefollowing: 0  D  p a.11.a.Anequivalentgatecountofmore ` 82 than3,000(2inputgates);or 8 3  D  p a.11.b.Atogglefrequencyexceeding1.2  5 GHz;  6  D a.12.FastFourierTransform(FFT) pH 8 processorshavingaratedexecutiontimeforan H 9 N-pointcomplexFFToflessthan(Nlog2   : N)/20,480ms,whereNisthenumberofpoints;  ;  D  p TechnicalNote: WhenNisequalto  = 1,024points,theformulain3A001.a.12givesan \> executiontimeof500%s. \4? b.Microwaveormillimeterwavecomponents,as  A follows: B  D b.1.Electronicvacuumtubesandcathodes,as lD follows: lDE  D Note1: 3A001.b.1doesnotcontroltubes G designedorratedforoperationinanyfrequency H bandwhichmeetsallofthefollowing I characteristics: J  D  p a)Doesnotexceed31.8GHz;and XK  D  p b)Is allocatedbytheITUfor X 0L radio-communicationsservices,butnotfor 0!M radio-determination. "N  D Note2: 3A001.b.1doesnotcontrol #P non- space-qualifiedtubeswhichmeetallthe $lQ followingcharacteristics: l%DR  D  p a)Anaverageoutputpowerequaltoor D& S lessthan50W;and ' T  D  p b)Designedorratedforoperationinany '!U frequencybandwhichmeetsallofthefollowing ("V characteristics: )|#W  D  p   1)Exceeds31.8GHzbutdoesnot |*T$X exceed43.5GHz;and T+,%Y  D  p   2)Is allocatedbytheITUfor ,,&Z radio-communicationsservices,butnotfor ( radio-determination.        b.1.a.Travelingwavetubes,pulsedor  continuouswave,asfollows:  `      4 b.1.a.1.Operatingatfrequencies 8  exceeding31.8GHz;        4 b.1.a.2.Havingacathodeheater    elementwithaturnontimetoratedRFpowerof p  lessthan3seconds; pH       4 b.1.a.3.Coupledcavitytubes,or    derivativesthereof,witha fractionalbandwidth   ofmorethan7%orapeakpowerexceeding2.5   kW;        4 b.1.a.4.Helixtubes,orderivatives X0 thereof,withanyofthefollowingcharacteristics: 0      4  ` b.1.a.4.a.An instantaneous  bandwidthofmorethanoneoctave,andaverage  power(expressedinkW)timesfrequency h (expressedinGHz)ofmorethan0.5; h@      4  ` b.1.a.4.b.An instantaneous  bandwidthofoneoctaveorless,andaverage  power(expressedinkW)timesfrequency  (expressedinGHz)ofmorethan1;or x %       4  ` b.1.a.4.c.Being space P ( qualified; (!  %z\    b.1.b.Crossed-fieldamplifiertubeswith "" againofmorethan17dB; ##     b.1.c.Impregnatedcathodesdesignedfor `%8% electronictubesproducingacontinuousemission 8& & currentdensityatratedoperatingconditions ' ' exceeding5A/cm2; '!(   b.2.Microwavemonolithicintegratedcircuits )p#* (MMIC)poweramplifiershavinganyofthe p*H$+ following: H+ %,   ,%-  D  p b.2.a.  Ratedforoperationatfrequencies (- exceeding3.2GHzuptoandincluding6GHzand . withanaverageoutputpowergreaterthan4W(36 / dBm)witha fractionalbandwidthgreaterthan 0 15%;  `1  D  p b.2.b.  Ratedforoperationatfrequencies 8 3 exceeding6GHzuptoandincluding16GHzand  4 withanaverageoutputpowergreaterthan1W(30  5 dBm)witha fractionalbandwidthgreaterthan  6 10%; p7  D  p b.2.c.  Ratedforoperationatfrequencies H 9 exceeding16GHzuptoandincluding31.8GHz   : andwithanaverageoutputpowergreaterthan  ; 0.8W(29dBm)witha fractionalbandwidth  < greaterthan10%;  =  D  p b.2.d.  Ratedforoperationatfrequencies X0? exceeding31.8GHzuptoandincluding37.5 0@ GHz; A  D  p b.2.e.  Ratedforoperationatfrequencies C exceeding37.5GHzuptoandincluding43.5GHz hD andwithanaverageoutputpowergreaterthan h@E 0.25W(24dBm)witha fractionalbandwidth @F greaterthan10%;or G  D  p b.2.f.  Ratedforoperationatfrequencies I exceeding43.5GHz. xJ  D Note1: 3A001.b.2doesnotcontrolbroadcast P (L satelliteequipmentdesignedorratedtooperatein ,!M thefrequencyrangeof40.5to42.5GHz. "N  D Note2: ThecontrolstatusoftheMMIC #P whoseratedoperatingfrequencyincludes $hQ frequencieslistedinmorethanonefrequency h%@R range,asdefinedby3A001.b.2.athrough @& S 3A001.b.2.f,isdeterminedbythelowestaverage ' T outputpowercontrolthreshold. '!U  D Note3: Notes1and2followingtheCategory )x#W 3headingforA.Systems,Equipment,and |*T$X Componentsmeanthat3A001.b.2.doesnot T+,%Y controlMMICsiftheyarespeciallydesignedfor ,,&Z otherapplications,e.g.,telecommunications, ( radar,automobiles.    f  g b.3.Discretemicrowavetransistorshaving  anyofthefollowing:  `     b.3.a. ` Ratedforoperationatfrequencies 8  exceeding3.2GHzuptoandincluding6GHzand   havinganaverageoutputpowergreaterthan60W   (47.8dBm);        b.3.b. ` Ratedforoperationatfrequencies pH  exceeding6GHzuptoandincluding31.8GHz H  andhavinganaverageoutputpowergreaterthan    20W(43dBm);       b.3.c. ` Ratedforoperationatfrequencies   exceeding31.8GHzuptoandincluding37.5GHz X andhavinganaverageoutputpowergreaterthan X0 0.5W(27dBm); 0     b.3.d. ` Ratedforoperationatfrequencies  exceeding37.5GHzuptoandincluding43.5GHz  andhavinganaverageoutputpowergreaterthan h 1W(30dBm);or h@     b.3.e. ` Ratedforoperationatfrequencies  exceeding43.5GHz.    Note:  4 Thecontrolstatusofatransistor x whoseratedoperatingfrequencyincludes |T frequencieslistedinmorethanonefrequency T , range,asdefinedby3A001.b.3.athrough ,!  3A001.b.3.e,isdeterminedbythelowestaverage "! outputpowercontrolthreshold. ""   b.4.Microwavesolidstateamplifiersand $d$ microwaveassemblies/modulescontaining d%<% microwaveamplifiershavinganyofthe <& & following: ' '     b.4.a. ` Ratedforoperationatfrequencies (") exceeding3.2GHzuptoandincluding6GHzand )t#* withanaverageoutputpowergreaterthan60W t*L$+ (47.8dBm)witha fractionalbandwidthgreater L+$%, than15%; $,%- Ї%   D  p b.4.b.  Ratedforoperationatfrequencies (- exceeding6GHzuptoandincluding31.8GHz . andwithanaverageoutputpowergreaterthan / 15W(42dBm)witha fractionalbandwidth 0 greaterthan10%;  `1 %s D  p b.4.c.  Ratedforoperationatfrequencies 8 3 exceeding31.8GHzuptoandincluding37.5  4 GHz;  5  D  p b.4.d.  Ratedforoperationatfrequencies p7 exceeding37.5GHzuptoandincluding43.5GHz pH 8 andwithanaverageoutputpowergreaterthan1W H 9 (30dBm)witha fractionalbandwidthgreater   : than10%;  ;  D  p b.4.e.  Ratedforoperationatfrequencies  = exceeding43.5GHz;or X>  D  p b.4.f.  Ratedforoperationatfrequencies 0@ above3.2GHzandallofthefollowing: A  D  p   b.4.f.1.  Anaverageoutputpower(in C watts),P,greaterthan150dividedbythe hD maximumoperatingfrequency(inGHz)squared h@E [P>150W*GHz2/fGHz2]; @F  D  p   b.4.f.2.  Afractionalbandwidthof5% H orgreater;and I  D  p   b.4.f.3.  Anytwosidesperpendicular xPK tooneanotherwithlengthd(incm)equaltoor P (L lessthan15dividedbythelowestoperating (!M frequencyinGHz[d15cm*GHz/fGHz]. "N  D  TechnicalNote: #&w%%&w'#&w%%&w3.2GHzshouldbeusedas #P thelowestoperatingfrequency#&w%%&wz#&w%%&wԀ(f#&w%%&w{#&<%%&w2$$b#&w%%&<{#&w%%&wGHz#&w%J&w$|#&<%J&w$b$#&w%J&2fmin,)andanyofthe   : following:  ;  D  p   b.9.c.1.Forfrequenciesequaltoor  = lessthan18GHz,anRFoutputpowergreater X> than100W;or X0?  D  p   b.9.c.2.Havingafrequencygreater A than18GHz. B Ѐ C  D  p TechnicalNotes : hD  D  p 1.  Tocalculatethecontrolvolumein jBE 3A001.b.9.b.,thefollowingexampleisprovided: BF foramaximumratedpowerof20W,thevolume G wouldbe:20WX10cm3/W=200cm3. H Ѐ I Ѐ2.Theturn-ontimein3A001.b.9.a.refers zJ tothetimefromfully-offtofullyoperational;i.e., zRK itincludesthewarm-uptimeoftheMPM. R *L c.Acousticwavedevices,asfollows,and "N speciallydesignedcomponentstherefor: "O  D c.1.Surfaceacousticwaveandsurface $bQ skimming(shallowbulk)acousticwavedevices b%:R (i.e., signalprocessingdevicesemploying :& S elasticwavesinmaterials),havinganyofthe ' T following: '!U  D  p c.1.a.Acarrierfrequencyexceeding2.5 )r#W GHz; r*J$X  D  p c.1.b.Acarrierfrequencyexceeding1 ",%Z GHz,butnotexceeding2.5GHz,andhavingany ( ofthefollowing:       4 c.1.b.1.Afrequencyside-lobe  rejectionexceeding55dB;  `      4 c.1.b.2.Aproductofthemaximum 8  delaytimeandthebandwidth(timein%sand   bandwidthinMHz)ofmorethan100;        4 c.1.b.3.Abandwidthgreaterthan250 p  MHz;or pH       4 c.1.b.4.Adispersivedelayofmore    than10%s;or       c.1.c.Acarrierfrequencyof1GHzor   less,havinganyofthefollowing: X      4 c.1.c.1.Aproductofthemaximum 0 delaytimeandthebandwidth(timein%sand  bandwidthinMHz)ofmorethan100;       4 c.1.c.2.Adispersivedelayofmore h than10%s;or h@      4 c.1.c.3.Afrequencyside-lobe  rejectionexceeding55dBandabandwidth  greaterthan50MHz;    c.2.Bulk(volume)acousticwavedevices xP (i.e., signalprocessingdevicesemploying P ( elasticwaves)thatpermitthedirectprocessingof (!  signalsatfrequenciesexceeding1GHz; "!   c.3.Acoustic-optic signalprocessing ## devicesemployinginteractionbetweenacoustic $`$ waves(bulkwaveorsurfacewave)andlight `%8% wavesthatpermitthedirectprocessingofsignals 8& & orimages,includingspectralanalysis,correlation ' ' orconvolution; '!( d.Electronicdevicesandcircuitscontaining )p#* components,manufacturedfrom p*H$+  superconductivematerialsspeciallydesigned H+ %, foroperationattemperaturesbelowthe critical  ,%- temperatureofatleastoneofthe (-  superconductiveconstituents,withanyofthe . following: /  D d.1.Currentswitchingfordigitalcircuits  `1 using superconductivegateswithaproductof ` 82 delaytimepergate(inseconds)andpower 8 3 dissipationpergate(inwatts)oflessthan10-14J;  4 or  5  D d.2.Frequencyselectionatallfrequencies p7 usingresonantcircuitswithQ-valuesexceeding pH 8 10,000; H 9 e.Highenergydevices,asfollows:  ;  D e.1.Cellsandphotovoltaicarrays,asfollows:  =  D  p          L  x     !  D  p e.1.a.Primarycellshavinganenergy X0? densityexceeding550Wh/kgat293K(20C); 0@  D  p e.1.b.Secondarycellshavinganenergy B densityexceeding250Wh/kgat293K(20C); C  D TechnicalNotes:  h@E  D 1.  p Forthepurposeof3A001.e.1.,energy DF density(Wh/kg)iscalculatedfromthenominal G voltagemultipliedbythenominalcapacityin H ampere-hoursdividedbythemassinkilograms.If I thenominalcapacityisnotstated,energydensity ~J iscalculatedfromthenominalvoltagesquared ~VK thenmultipliedbythedischargedurationinhours V .L dividedbythedischargeloadinOhmsandthe .!M massinkilograms. "N  D 2.  p Forthepurposeof3A001.e.1.,a'cell'is "O definedasanelectrochemicaldevice,whichhas #P positiveandnegativeelectrodes,andelectrolyte, $hQ andisasourceofelectricalenergy.Itisthebasic h%@R buildingblockofabattery. @& S  D 3.  p Forthepurposeof3A001.e.1.a.,a ' T 'primarycell'isa'cell'thatisnotdesignedtobe '!U chargedbyanyothersource. ("V  D 4.  p Forthepurposeof3A001.e.1.b.,a )z#W secondarycellisa'cell'thatisdesignedtobe |*T$X chargedbyanexternalelectricalsource. T+,%Y  Note:  p 3A001.e.doesnotcontrolbatteries, ,,&Z includingsinglecellbatteries. ( % %     e.1.c. Spacequalifiedandradiation  hardenedphotovoltaicarrayswithaspecific  powerexceeding160W/m2atanoperating  ` temperatureof301K(28$C)underatungsten ` 8 illuminationof1kW/m2at2,800K(2,527$C);%%ON 8        % 9 e.2.Highenergystoragecapacitors,as   follows:    %9    e.2.a.Capacitorswitharepetitionrateof   lessthan10Hz(singleshotcapacitors)havingall   ofthefollowing:        4 e.2.a.1.Avoltageratingequaltoor p  morethan5kV; a      4 e.2.a.2.Anenergydensityequaltoor kC morethan250J/kg;and \4      4 e.2.a.3.Atotalenergyequaltoor + morethan25kJ;      e.2.b.Capacitorswitharepetitionrateof  10Hzormore(repetitionratedcapacitors)having c allofthefollowing: c;      4 e.2.b.1.Avoltageratingequaltoor  morethan5kV;       4 e.2.b.2.Anenergydensityequaltoor !s morethan50J/kg; s"K       4 e.2.b.3.Atotalenergyequaltoor #$" morethan100J;and $#      4 e.2.b.4.Acharge/dischargecyclelife & % equaltoormorethan10,000; '[!& % :   e.3. Superconductiveelectromagnetsand 3) #( solenoidsspeciallydesignedtobefullychargedor  *#) dischargedinlessthanonesecond,havingallof *$* thefollowing:%:e +%+ Ї D Note: 3A001.e.3doesnotcontrol (+  superconductiveelectromagnetsorsolenoids , speciallydesignedforMagneticResonance - Imaging(MRI)medicalequipment. .  D  p e.3.a.Energydeliveredduringthe d <0 dischargeexceeding10kJinthefirstsecond; < 1  D  p e.3.b.Innerdiameterofthecurrent  3 carryingwindingsofmorethan250mm;and  4  D  p e.3.c.Ratedforamagneticinductionof tL 6 morethan8Tor overallcurrentdensityinthe L$ 7 windingofmorethan300A/mm2; $ 8 f.Rotaryinputtypeshaftabsoluteposition  : encodershavinganyofthefollowing:  ;  D f.1.Aresolutionofbetterthan1partin \4= 265,000(18bitresolution)offullscale;or 4 >  D f.2.Anaccuracybetterthan2.5secondsof @ arc. A g. D Solid-statepulsedpowerswitchingthyristor lDC devicesandthyristormodulesusingeither DD electrically,optically,orelectronradiation E controlledswitchmethods,havinganyofthe F following: G  D 1. p Amaximumturn-oncurrentrateofrise |TI (di/dt)greaterthan30,000A/%sandoff-state T ,J voltagegreaterthan1,100V;or ,!K  D 2. p Amaximumturn-oncurrentrateofrise "M (di/dt)greaterthan2,000A/%sandallofthe #N following: $dO  D  p a.  Anoff-statepeakvoltageequaltoor <& Q greaterthan3,000V;and ' R  D  p b.  Apeak(surge)currentequaltoor ("T greaterthan3,000A. )t#U  Note1: 3A001.g.includes: L+$%W  D - p SiliconControlledRectifiers_(_SCRs_) &,%X   -  ElectricalTriggering_Thyristors_Ԁ(_ETTs_) (   -  LightTriggering_Thyristors_Ԁ(_LTTs_)    -  IntegratedGateCommutated_Thyristors_  (_IGCTs_)    -  GateTurn-off_Thyristors_Ԁ(_GTOs_)  `   -  MOSControlled_Thyristors_Ԁ(_MCTs_) ` 8   -  _Solidtrons_ 8   Note2:  4 3A001.g.doesnotcontrol_thyristor_   devicesand_thyristor_Ԁmodulesincorporatedinto    equipmentdesignedforcivilrailwayor civil r  aircraftapplications. rJ   TechnicalNote : Forthepurposesof3A001.g., "  a'_thyristor_Ԁmodule'containsoneormore   _thyristor_Ԁdevices.N#9#O#aX##&w%%&w~#&w%%&w   #&w%%&w#&w%%&w 3A002Generalpurposeelectronicequipment, \4 asfollows(seeListofItemsControlled).  4   LicenseRequirements     ReasonforControl:NS,AT l Control(s) 4  `      CountryChart D   NSappliestoentireentry   NSColumn2  ATappliestoentireentry   ATColumn1 |   LicenseRequirementNotes :See743.1of T , theEARforreportingrequirementsforexports 0!  underLicenseExceptions. "!  LicenseExceptions  ##   _LVS_: 4 $3000:3A002.a,.e,.f,.g; l%D%      4 $5000:3A002.bto.d D& & #&w%%&w#0  _GBS_:04Yesfor3A002.a.1.;and3A002.b ' ' (synthesizedoutputfrequencyof2.6 '!( _GHz_Ԁorlessanda"frequency (") switchingtime"of0.3msormore).)|#*44 0  _CIV_:04Yesfor3A002.a.1(providedallof |*T$+ thefollowingconditionsaremet:1) T+,%, Bandwidthsdonotexceed:4MHz,,&-44 pertrackandhaveupto28tracksor (- 2MHzpertrackandhaveupto42 . tracks;2)Tapespeeddoesnotexceed / 6.1m/s;3)Theyarenotdesignedfor 0 underwateruse;4)Theyarenot  `1 _ruggedized_Ԁformilitaryuse;and5) ` 82 Recordingdensitydoesnotexceed 8 3 653.2magneticfluxsinewavesper  4 mm);and3A002.b(synthesized  5 outputfrequencyof2.6_GHz_Ԁorless;  6 anda"frequencyswitchingtime"of p7 0.3msormore).&w%%&wpH 8(#(# #&w%%&w # ListofItemsControlled    :  D Unit:Number  < &w%%&wXlX%&w#XlXXXl##&w%XXl#0 D RelatedControls: Spacequalifiedatomic  = frequencystandardsdefinedin41!O  5  3A002.g.26!OJ_  7$"1Ԁare l> subjecttotheexportlicensingauthorityofthe lD? DepartmentofState,DirectorateofDefense D@ TradeControls(22_CFR_Ԁ121.1CategoryXV). A Seealso43!O  5  3A2926!OJ_  7Ԁand44.!O  5  3A9926S!OgJ_  7".BD(#D(# 0 D RelatedDefinitions:Constantpercentage C bandwidthfiltersarealsoknownasoctaveor |D fractionaloctavefilters.|TED(#D(#  D Items: T,F &w%%&wa.Recordingequipment,asfollows,andspecially H designedtesttapetherefor: I  D a.1.Analoginstrumentationmagnetictape dK recorders,includingthosepermittingthe d <L recordingofdigitalsignals(e.g.,usingahigh  of8bitsormore;and \4?  D  p  D  p a.6.b.Acontinuousthroughputof1  A Gbit/sormore; B  D  p b. Frequencysynthesizer electronic lD assemblieshavinga frequencyswitchingtime lDE fromoneselectedfrequencytoanotherofless DF than1ms; G  Note : p Thecontrolstatusofsignalanalyzers, I signalgenerators,networkanalyzers,and ~J microwavetestreceiversasstand-alone ~VK instrumentsisdeterminedby3A002.c.,3A002.d., V .L 3A002.e.,and3A002.f.,respectively. .!M c.Radiofrequency signalanalyzers,asfollows: "O  D c.1. Signalanalyzerscapableofanalyzing $fQ anyfrequenciesexceeding31.8GHzbutnot f%>R exceeding37.5GHzandhavinga3dBresolution >& S bandwidth(RBW)exceeding10MHz; ' T  D c.2. Signalanalyzerscapableofanalyzing ("V frequenciesexceeding43.5GHz; )v#W  D c.3. Dynamicsignalanalyzershavinga N+&%Y  real-timebandwidthexceeding500kHz; &,%Z Ї  Note: 3A002.c.3doesnotcontrolthose (  dynamicsignalanalyzersusingonlyconstant  percentagebandwidthfilters(alsoknownas  octaveorfractionaloctavefilters).  d.  Frequencysynthesizedsignalgenerators d < producingoutputfrequencies,theaccuracyand <  shorttermandlongtermstabilityofwhichare   controlled,derivedfromordisciplinedbythe   internalmasterreferenceoscillator,andhaving    anyofthefollowing: t    d.1.Amaximumsynthesizedfrequency L$  exceeding31.8GHz,butnotexceeding43.5GHz $  andratedtogenerateapulsedurationoflessthan   100ns;     d.2.Amaximumsynthesizedfrequency \ exceeding43.5GHz; \4   d.3.A frequencyswitchingtimefromone   selectedfrequencytoanotherasspecifiedbyany  ofthefollowing:      d.3.a. ` Lessthan10ns; lD     d.3.b. ` Lessthan100sforany  frequencychangeexceeding1.6GHzwithinthe  synthesizedfrequencyrangeexceeding3.2GHz  butnotexceeding10.6GHz; |     d.3.c. ` Lessthan250sforany T , frequencychangeexceeding550MHzwithinthe ,!  synthesizedfrequencyrangeexceeding10.6GHz "! butnotexceeding31.8GHz; ""     d.3.d. ` Lessthan500sforany $d$ frequencychangeexceeding550MHzwithinthe d%<% synthesizedfrequencyrangeexceeding31.8GHz <& & butnotexceeding43.5GHz;or ' '     d.3.e. ` Lessthan1mswithinthe (") synthesizedfrequencyrangeexceeding43.5GHz; )t#* or t*L$+   d.4.Asinglesideband(SSB)phasenoise $,%- betterthan(126+20log10F20log10f)in (- dBc/Hz,whereFistheoff-setfromtheoperating . frequencyinHzandfistheoperatingfrequency / inMHz; 0  Note1 :Forthepurposeof3A002.d.,theterm ` 82 frequencysynthesizedsignalgeneratorsincludes : 3 arbitrarywaveformandfunctiongenerators.  4  Note2 :3A002.d.doesnotcontrolequipmentin  6 whichtheoutputfrequencyiseitherproducedby t7 theadditionorsubtractionoftwoormorecrystal tL 8 oscillatorfrequencies,orbyanadditionor L$ 9 subtractionfollowedbyamultiplicationofthe $ : result.  ;  D TechnicalNotes:     =  D 1.  p Arbitrarywaveformandfunction `> generatorsarenormallyspecifiedbysamplerate b:? (e.g.,GSample/s),whichisconvertedtotheRF :@ domainbytheNyquistfactoroftwo.Thus,a1 A GSample/sarbitrarywaveformhasadirectoutput B capabilityof500MHz.Or,whenoversamplingis C used,themaximumdirectoutputcapabilityis rD proportionatelylower. rJE   D 2. Forthepurposesof3A002.d.1.,'pulse J"F duration'isdefinedasthetimeintervalbetween $G theleadingedgeofthepulseachieving90%ofthe H peakandthetrailingedgeofthepulseachieving I 10%ofthepeak. J  D Note: 3A002.ddoesnotcontrolequipmentin \ 4L whichtheoutputfrequencyiseitherproducedby 8!M theadditionorsubtractionoftwoormorecrystal "N oscillatorfrequencies,orbyanadditionor "O subtractionfollowedbyamultiplicationofthe #P result. $pQ e.Networkanalyzerswithamaximumoperating H& S frequencyexceeding43.5GHz;  ' T f.Microwavetestreceivershavingallofthe ("V following: )#W  D f.1.Amaximumoperatingfrequency X+0%Y exceeding43.5GHz;and 0,&Z Ї  f.2.Beingcapableofmeasuringamplitude ( andphasesimultaneously;  g.Atomicfrequencystandardshavinganyofthe  following:  `   g.1.Long-termstability(aging)less(better) 8  than1x1011/month;or   % .   g.2.Being spacequalified.    %.  Note: 3A002.g.1doesnotcontrolnon- space pH  qualifiedrubidiumstandards.#&w%%&w#&w%%&wXlX%&w L$  #XlXXXl##&w%XXl#&w%%&w #&w%%&wy#&w%%&w3A003  Spraycoolingthermalmanagement   systemsemployingclosedloopfluidhandling   andreconditioningequipmentinasealed \ enclosurewhereadielectricfluidissprayed \4 ontoelectroniccomponentsusingspecially 4  designedspraynozzlesthataredesignedto   maintainelectroniccomponentswithintheir  operatingtemperaturerange,andspecially  designedcomponentstherefor. #&w%%&w#& %%&w+%&  l #& %+E##&w%%& &#&w%%&w #&w%%&w#LicenseRequirements  D   ReasonforControl:NS,AT  Control(s) 4  `      CountryChart | NSappliestoentireentry   NSColumn2 T ,      4 ATappliestoentireentry   ATColumn1 "!  LicenseExceptions  ##   LVS: 4 N/A  d%<%   GBS: 4 N/A <& &   CIV: 4 N/A ' '  ListofItemsControlled  (")   Unit:Numberofsystems,componentsin$ t*L$+ 0  RelatedControls:N/AL+$%, 0  RelatedDefinitions:N/A$,%-  D Items: (- Thelistofitemscontrollediscontainedinthe / ECCNheading.&w%%&w 0 #&w%%&w,#&w%%&w#&w%%&w# % ( 3A101Electronicequipment,devicesand 8 3 components,otherthanthosecontrolledby  4 3A001,asfollows(seeListofItems  5 Controlled).   6 %( LicenseRequirements  pH 8  D ReasonforControl:MT,AT   :  D  p          L Control(s)         L  x CountryChart  <  D MTappliestoentireentry L  x MTColumn1 X> ATappliestoentireentry L  x ATColumn1 0@  LicenseExceptions  B  D LVS:  N/A   hD  D GBS:  N/A   h@E  D CIV:  N/A @F  D  p          L  x ListofItemsControlled  H  D Unit:Number xJ 0 D RelatedControls:Itemscontrolledin46zԶ !O  5  3A101.a6 !O   7z*#  xPK aresubjecttotheexportlicensingauthorityof P (L theU.S.DepartmentofState,Directorateof (!M DefenseTradeControls(See22CFRpart "N 121)."OD(#D(#  D RelatedDefinitions:N/A #P  D Items: $`Q % 5 a.Analog-to-digitalconverters,usablein 8& S  missiles,designedtomeetmilitary ' T specificationsforruggedizedequipment; '!U %5 b.Acceleratorscapableofdelivering )p#W electromagneticradiationproducedby p*H$X bremsstrahlungfromacceleratedelectronsof2 H+ %Y MeVorgreater,andsystemscontainingthose  ,%Z accelerators,usableforthe missilesorthe ( subsystemsof missiles.    Note: 3A101.babovedoesnotinclude  equipmentspeciallydesignedformedical  b purposes. b :  % ) 3A201Electroniccomponents,otherthan   thosecontrolledby3A001,asfollows(seeList    ofItemsControlled).  r  %) LicenseRequirements  J"    ReasonforControl:NP,AT   Control(s) 4  `      CountryChart     NPappliestoentireentry   NPColumn1 Z2 ATappliestoentireentry   ATColumn1    LicenseExceptions     LVS: 4 N/A nF   GBS: 4 N/A F   CIV: 4 N/A   ListofItemsControlled     Unit:Number ~V 0  RelatedControls:(1)SeeECCNs4;!O  5  3E0016!O  7_ V . ( developmentand production)and4<_!O  5  3E2016!O  7_ .!  ( use)fortechnologyforitemscontrolled "! underthisentry.(2)Alsosee4=_!O  5  3A001.e.26!Oacce  7ro "" (capacitors)and4>ro !O  5  3A001.e.36!Oacce  7ro (superconducting ## electromagnets).(3)Superconducting $f$ electromagnetsspeciallydesignedorprepared f%>% foruseinseparatinguraniumisotopesare >& & subjecttotheexportlicensingauthorityofthe ' ' NuclearRegulatoryCommission(see10CFR '!( part110).(")   RelatedDefinitions:N/A )v#*   Items: v*N$+ a.Pulsedischargecapacitorshavingeitherofthe &,%- followingsetsofcharacteristics: (-  D a.1.Voltageratinggreaterthan1.4kV, / energystoragegreaterthan10J,capacitance 0 greaterthan0.5%F,andseriesinductanceless  `1 than50nH;or ` 82  D a.2.Voltageratinggreaterthan750V,  4 capacitancegreaterthan0.25%F,andseries  5 inductancelessthan10nH;  6 b.Superconductingsolenoidalelectromagnets pH 8 havingallofthefollowingcharacteristics: H 9  D b.1.Capableofcreatingmagneticfields  ; greaterthan2T;  <  D b.2.Aratiooflengthtoinnerdiameter X> greaterthan2; X0?  D b.3.Innerdiametergreaterthan300mm;and A  D b.4.Magneticfielduniformtobetterthan1% C overthecentral50%oftheinnervolume; hD  D Note: 3A201.bdoesnotcontrolmagnets @F speciallydesignedforandexported aspartsof G medicalnuclearmagneticresonance(NMR) H imagingsystems.Thephrase aspartofdoes I notnecessarilymeanphysicalpartinthesame zJ shipment;separateshipmentsfromdifferent zRK sourcesareallowed,providedtherelatedexport R *L documentsclearlyspecifythattheshipmentsare *!M dispatched aspartoftheimagingsystems. "N c.FlashXraygeneratorsorpulsedelectron #P acceleratorshavingeitherofthefollowingsetsof $bQ characteristics: b%:R  D c.1.Anacceleratorpeakelectronenergyof ' T 500keVorgreater,butlessthan25MeV,and '!U witha figureofmerit(K)of0.25orgreater;or ("V  D c.2.Anacceleratorpeakelectronenergyof r*J$X 25MeVorgreater,anda peakpowergreater J+"%Y than50MW; ",%Z Ї  Note: 3A201.cdoesnotcontrolaccelerators ( thatarecomponentpartsofdevicesdesignedfor  purposesotherthanelectronbeamorXray  radiation(electronmicroscopy,forexample)nor  thosedesignedformedicalpurposes.  b   TechnicalNotes:  :    (1)The figureofmeritKisdefinedas:K=   1.7x103V2.65Q.Visthepeakelectronenergyin    millionelectronvolts.Iftheacceleratorbeam p  pulsedurationislessthanorequalto1%s,then pH  QisthetotalacceleratedchargeinCoulombs.If H  theacceleratorbeampulsedurationisgreater    than1%s,thenQisthemaximumaccelerated   chargein1%s.Qequalstheintergralofiwith   respecttot,overthelesserof1%sorthetime   durationofthebeampulse X (Q=(idt),whereiisbeamcurrentinamperes X0 andtistimeinseconds. 0   (2) Peakpower=(peakpotentialinvolts)  x(peakbeamcurrentinamperes).    (3)Inmachinesbasedonmicrowave h@ acceleratingcavities,thetimedurationofthe @ beampulseisthelesserof1%sorthedurationof  thebunchedbeampacketresultingfromone  microwavemodulatorpulse.    (4)Inmachinesbasedonmicrowave xP acceleratingcavities,thepeakbeamcurrentisthe P ( averagecurrentinthetimedurationofabunched (!  beampacket. "!  % Y 3A225Frequencychangers(alsoknownas $`$ convertersorinverters)orgenerators,other `%8% thanthosedescribedin0B001.c.11,havingall 8& & ofthefollowingcharacteristics(seeListof ' ' ItemsControlled).  '!( %Y) LicenseRequirements  )p#*   ReasonforControl:NP,AT H+ %,       ,%- ЇControl(s)         L  x CountryChart (- NPappliestoentireentry L  x NPColumn1 / ATappliestoentireentry L  x ATColumn1  `1  LicenseExceptions  8 3  D LVS:  N/A    5  D GBS:  N/A    6  D CIV:  N/A t7  ListofItemsControlled  L$ 9  D Unit:Number  ; 0 D RelatedControls:(1)SeeECCNs4?roN!!O  5  3E0016-!O-  7 .#-  < ( developmentand production)and4@roM!!O  5  3E2016.!O.  7 -#.  = ( use)fortechnologyforitemscontrolled \> underthisentry.(2)Frequencychangers \4? (alsoknownasconvertersorinverters) 4 @ speciallydesignedorpreparedforusein  A separatinguraniumisotopesaresubjecttothe B exportlicensingauthorityoftheNuclear C RegulatoryCommission(see10CFRpart lD 110).lDED(#D(#  D RelatedDefinitions:N/A DF  D Items: G a.Amultiphaseoutputcapableofprovidinga I powerof40Wormore; |J b.Capableofoperatinginthefrequencyrange T ,L between600and2000Hz; ,!M c.Totalharmonicdistortionbelow10%;and "O d.Frequencycontrolbetterthan0.1%. $dQ  D  $,%Z % G 3A226Highpowerdirectcurrentpower ( supplies,otherthanthosedescribedin  0B001.j.6,havingbothofthefollowing  characteristics(seeListofItemsControlled).   %G03 LicenseRequirements  ` 8   ReasonforControl:NP,AT   Control(s) 4  `      CountryChart      NPappliestoentireentry   NPColumn1 pH  ATappliestoentireentry   ATColumn1     LicenseExceptions      LVS: 4 N/A  \   GBS: 4 N/A  \4   CIV: 4 N/A 4   ListofItemsControlled     Unit:$value l 0  RelatedControls:(1)SeeECCNs42ip!O  5  3E0016r7!O7N/A  7 7 lD ( developmentand production)and4A !O  5  3E2016b8!Ov8N/A  7 8 D ( use)fortechnologyforitemscontrolled  underthisentry.(2)AlsoseeECCN4C !O  5  3A22769!O9N/A  7 9.  (3)Directcurrentpowersuppliesspecially  designedorpreparedforuseinseparating | uraniumisotopesaresubjecttotheexport |T licensingauthorityoftheNuclearRegulatory T , Commission(see10CFRpart110).,!    RelatedDefinitions:N/A "!   Items: "" a.Capableofcontinuouslyproducing,overatime $d$ periodof8hours,100Vorgreaterwithcurrent d%<% outputof500Aorgreater;and <& & b.Currentorvoltagestabilitybetterthan0.1% '!( overatimeperiodof8hours. (")   $,%- % B 3A227Highvoltagedirectcurrentpower (- supplies,otherthanthosedescribedin . 0B001.j.5,havingbothofthefollowing / characteristics(seeListofItemsControlled).  0 %BV= LicenseRequirements  ` 82  D ReasonforControl:NP,AT  4 Control(s)         L  x CountryChart  6  D NPappliestoentireentry L  x NPColumn1 pH 8 ATappliestoentireentry L  x ATColumn1   :  LicenseExceptions   <  D LVS:  N/A   X>  D GBS:  N/A   X0?  D CIV:  N/A 0@  ListofItemsControlled  B  D Unit:$value hD 0 D RelatedControls:(1)SeeECCNs4D N!!O  5  3E0016A!OAN/A  7 .#A h@E ( developmentand production)and4F M!!O  5  3E2016B!OBN/A  7 -#B @F ( use)fortechnologyforitemscontrolled G underthisentry.(2)AlsoseeECCN4Hip!!O  5  3A2266C!OCN/A  7 "C. H (3)Directcurrentpowersuppliesspecially I designedorpreparedforuseinseparating xJ uraniumisotopesaresubjecttotheexport xPK licensingauthorityoftheNuclearRegulatory P (L Commission(see10CFRpart110).(!MD(#D(#  D RelatedDefinitions:N/A "N  D Items: "O a.Capableofcontinuouslyproducing,overatime $`Q periodof8hours,20kVorgreaterwithcurrent `%8R outputof1Aorgreater;and 8& S b.Currentorvoltagestabilitybetterthan0.1% '!U overatimeperiodof8hours. ("V    ,%Z 3A228Switchingdevices,asfollows(seeList ( ofItemsControlled).    LicenseRequirements     ReasonforControl:NP,AT ` 8 Control(s) 4  `      CountryChart     NPappliestoentireentry   NPColumn1    ATappliestoentireentry   ATColumn1 pH   LicenseExceptions       LVS: 4 N/A      GBS: 4 N/A      CIV: 4 N/A X  ListofItemsControlled  0   Unit:Number  0  RelatedControls:(1)SeeECCNs4I !O  5  3E0016K!O%K  7 SK  ( developmentand production)and4J !O  5  3E2016L!OL  7 CL h ( use)fortechnologyforitemscontrolled h@ underthisentry.(2)AlsoseeECCN @ 4L !O  5  3A991.k6?M!OSM  7 XM.   RelatedDefinitions:N/A    Items:  a.Cold-cathodetubes,whethergasfilledornot, xP operatingsimilarlytoasparkgap,havingallof P ( thefollowingcharacteristics: (!    a.1.Containingthreeormoreelectrodes; ""   a.2.Anodepeakvoltageratingof2.5kVor $`$ more; `%8%   a.3.Anodepeakcurrentratingof100Aor ' ' more;and '!(   a.4.Anodedelaytimeof10microsecondor )p#* less. p*H$+   TechnicalNote: 3A228.aincludesgas  ,%- krytrontubesandvacuumsprytrontubes. (- b.Triggeredspark-gapshavingbothofthe / followingcharacteristics: 0  D b.1.Ananodedelaytimeof15%sorless;and ` 82  D b.2.Ratedforapeakcurrentof500Aor  4 more.  5 c.Modulesorassemblieswithafastswitching p7 functionhavingallofthefollowing pH 8 characteristics: H 9  D c.1.Anodepeakvoltageratinggreaterthan  ; 2kV;  <  D c.2.Anodepeakcurrentratingof500Aor X> more;and X0?  D c.3.Turn-ontimeof1%sorless. A  3A229Firingsetsandequivalenthigh-current hD pulsegenerators(fordetonatorscontrolledby h@E 3A232),asfollows(seeListofItems @F Controlled).  G  LicenseRequirements  I  D ReasonforControl:NP,AT xPK Control(s)         L  x CountryChart (!M NPappliestoentireentry L  x NPColumn1 "O ATappliestoentireentry L  x ATColumn1 $`Q  LicenseExceptions  8& S  D LVS:  N/A   '!U  D GBS:  N/A   ("V  D CIV:  N/A )t#W  D  p        $,%Z ListofItemsControlled  (   Unit:Number  0  RelatedControls:(1)SeeECCNs4M !O  5  3E0016X!OX  7 X  ( developmentand production)and4N !O  5  3E2016Y!OY  7 Y  ` ( use)fortechnologyforitemscontrolled ` 8 underthisentry.(2)Highexplosivesand 8  relatedequipmentformilitaryusearesubject   totheexportlicensingauthorityoftheU.S.   DepartmentofState,DirectorateofDefense    TradeControls(see22CFRpart121).p  0  RelatedDefinitions:In3A229.b.5, rise pH  timeisdefinedasthetimeintervalfrom10% H  to90%currentamplitudewhendrivinga    resistiveload.  0  ECCNControls:3A229.bincludesxenon   flashlampdrivers.    Items: X a.Explosivedetonatorfiringsetsdesignedto 0 drivemultiplecontrolleddetonatorscontrolledby  3A232;  b.Modularelectricalpulsegenerators(pulsers) h havingallofthefollowingcharacteristics: h@   b.1.Designedforportable,mobile,or  ruggedizeduse;    b.2.Enclosedinadusttightenclosure; x   b.3.Capableofdeliveringtheirenergyinless P ( than15%s; (!    b.4.Havinganoutputgreaterthan100A; ""   b.5.Havinga risetimeoflessthan10%s $`$ intoloadsoflessthan40ohms; `%8%   b.6.Nodimensiongreaterthan254mm; ' '   b.7.Weightlessthan25kg;and (")   b.8.Specifiedforuseoveranextended p*H$+ temperaturerange223K(50$C)to373K H+ %, (100$C)orspecifiedassuitableforaerospace  ,%- applications. (-  3A230Highspeedpulsegeneratorshaving 0 bothofthefollowingcharacteristics(seeListof  `1 ItemsControlled).  ` 82  LicenseRequirements   4  D ReasonforControl:NP,AT  6 Control(s)         L  x CountryChart pH 8  D NPappliestoentireentry L  x NPColumn1   : ATappliestoentireentry L  x ATColumn1  <  LicenseExceptions  X>  D LVS:  N/A   4 @  D GBS:  N/A    A  D CIV:  N/A B  ListofItemsControlled  lD  D Unit:Number DF 0 D RelatedControls:SeeECCNs4O L!!O  5  3E0016!f!O5f  7 ,#cf G ( developmentand production)and4P M!!O  5  3E2016g!O%g  7 -#Sg H ( use)fortechnologyforitemscontrolled I underthisentry.|JD(#D(# 0 D RelatedDefinitions:In3A230.b, pulse |TK transitiontimeisdefinedasthetimeinterval T ,L between10%and90%voltageamplitude.,!MD(#D(#  D Items: "N a.Outputvoltagegreaterthan6Vintoaresistive #P loadoflessthan55ohms;and $dQ b. Pulsetransitiontimelessthan500ps. <& S  D  p    $,%Z 3A231Neutrongeneratorsystems,including ( tubes,havingbothofthefollowing  characteristics(seeListofItemsControlled).    LicenseRequirements   `   ReasonforControl:NP,AT <  h  8  Control(s) 4  `      CountryChart     NPappliestoentireentry   NPColumn1 p  ATappliestoentireentry   ATColumn1 H   LicenseExceptions      LVS: 4 N/A     GBS: 4 N/A  X   CIV: 4 N/A X0  ListofItemsControlled   0  Unit:Number;partsandaccessoriesin$  valueh 0  RelatedControls:SeeECCNs4Q !O  5  3E0016n!On   77n h@ ( developmentand production)and4R7!O  5  3E2016~o!Oo   77o @ ( use)fortechnologyforitemscontrolled  underthisentry.   RelatedDefinitions:N/A    Items: x a.Designedforoperationwithoutanexternal P ( vacuumsystem;and (!  b.Utilizingelectrostaticaccelerationtoinducea "" tritiumdeuteriumnuclearreaction. ##      4  `    3A232Detonatorsandmultipointinitiation 8& & systems,asfollows(seeListofItems ' ' Controlled).  '!(  LicenseRequirements  )p#*   ReasonforControl:NP,AT H+ %,   ,%- Control(s)         L  x CountryChart (-  D NPappliestoentireentry L  x NPColumn1 / ATappliestoentireentry L  x ATColumn1  `1  LicenseExceptions  8 3  D LVS:  N/A    5  D GBS:  N/A    6  D CIV:  N/A p7  ListofItemsControlled  H 9  D Unit:Number  ; 0 D RelatedControls:(1)SeeECCNs4S7N!!O  5  3E0016Fv!OZv   77.#v  < ( developmentand production)and4T7M!!O  5  3E20166w!OJw   77-#xw  = ( use)fortechnologyforitemscontrolled X> underthisentry.(2)Highexplosivesand X0? relatedequipmentformilitaryusearesubject 0@ totheexportlicensingauthorityoftheU.S. A DepartmentofState,DirectorateofDefense B TradeControls(see22CFRpart121).CD(#D(#  D RelatedDefinitions:N/A hD 0 D ECCNControls:Thisentrydoesnotcontrol h@E detonatorsusingonlyprimaryexplosives, @F suchasleadazide.GD(#D(#  D Items: H a.Electricallydrivenexplosivedetonators,as xJ follows: xPK  D a.1.Explodingbridge(EB); (!M  D a.2.Explodingbridgewire(EBW); "O  D a.3.Slapper; $`Q  D a.4.Explodingfoilinitiators(EFI); 8& S b.Arrangementsusingsingleormultiple '!U detonatorsdesignedtonearlysimultaneously ("V initiateanexplosivesurfaceoveranareagreater )p#W than5,000mm2fromasinglefiringsignalwithan p*H$X initiationtimingspreadoverthesurfaceofless H+ %Y than2.5%s.  ,%Z Ї  TechnicalNote: Thedetonatorscontrolled ( bythisentryallutilizeasmallelectrical  conductor(bridge,bridgewireorfoil)that  explosivelyvaporizeswhenafast,highcurrent  electricalpulseispassedthroughit.In  b nonslappertypes,theexplodingconductorstarts b : achemicaldetonationinacontactinghigh :  explosivematerial,suchasPETN   (Pentaerythritoltetranitrate).Inslapper   detonators,theexplosivevaporizationofthe    electricalconductordrivesaflyerorslapper r  acrossagapandtheimpactoftheslapperonan rJ  explosivestartsachemicaldetonation.The J"  slapperinsomedesignsisdrivenbyamagnetic "  force.Thetermexplodingfoildetonatormay   refertoeitheraEBoraslappertypedetonator.   Also,thewordinitiatorissometimesusedinplace   oftheworddetonator. Z     % [ 3A233Massspectrometers,otherthanthose   describedin0B002.g,capableofmeasuring  ionsof230atomicmassunitsorgreaterand  havingaresolutionofbetterthan2partsin j 230,andionsourcestherefor.  jB %[L LicenseRequirements     ReasonforControl:NP,AT  Control(s) 4  `      CountryChart R *   NPappliestoentireentry   NPColumn1 "! ATappliestoentireentry   ATColumn1 ##  LicenseExceptions b%:%    LVS: 4 N/A  ' '   GBS: 4 N/A  '!(   CIV: 4 N/A (")  ListofItemsControlled  r*J$+   Unit:Number ",%- 0 D RelatedControls:(1)SeeECCNs4U7N!!O  5  3E0016ʆ!Oކ   77.#  (- ( developmentand production)and4V7M!!O  5  3E2016!O·   77-# . ( use)fortechnologyforitemscontrolled / underthisentry.(2)Massspectrometers 0 speciallydesignedorpreparedforanalyzing  `1 onlinesamplesofUF6gasstreamsare ` 82 subjecttotheexportlicensingauthorityofthe 8 3 NuclearRegulatoryCommission(see10CFR  4 part110). 5D(#D(#  D RelatedDefinitions:N/A  6  D Items: p7 a.Inductivelycoupledplasmamassspectrometers H 9 (ICP/MS);   : b.Glowdischargemassspectrometers(GDMS);  < c.Thermalionizationmassspectrometers X> (TIMS); X0? d.Electronbombardmentmassspectrometersthat A haveasourcechamberconstructedfrom,lined B withorplatedwithmaterialsresistanttoUF6; C e.Molecularbeammassspectrometershaving h@E eitherofthefollowingcharacteristics: @F  D e.1.Asourcechamberconstructedfrom, H linedwithorplatedwithstainlesssteelor I molybdenumandequippedwithacoldtrap xJ capableofcoolingto193K(80$C)orless;or xPK  D e.2.Asourcechamberconstructedfrom, (!M linedwithorplatedwithmaterialsresistantto "N UF6; "O f.Massspectrometersequippedwitha $`Q microfluorinationionsourcedesignedfor `%8R actinidesoractinidefluorides. 8& S    ,%Z % / 3A292Oscilloscopesandtransientrecorders ( otherthanthosecontrolledby3A002.a.5,and  speciallydesignedcomponentstherefor.   %/~ LicenseRequirements   `   ReasonforControl:NP,AT 8  Control(s) 4  `      CountryChart     NPappliestoentireentry   NPColumn2 p  ATappliestoentireentry   ATColumn1 H   LicenseExceptions      LVS: 4 N/A      GBS: 4 N/A  \   CIV: 4 N/A \4  ListofItemsControlled      Unit:Number  0  RelatedControls:SeeECCN4X !O  5  3E2926!O   7 Ó l ( development, production,and use)for lD technologyforitemscontrolledunderthis D entry. 0  RelatedDefinitions:"Bandwidth"isdefined  asthebandoffrequenciesoverwhichthe  deflectiononthecathoderaytubedoesnot | fallbelow70.7%ofthatatthemaximum |T pointmeasuredwithaconstantinputvoltage T , totheoscilloscopeamplifier.,!    Items: "! a.Non-modularanalogoscilloscopeshavinga ## bandwidthof1GHzorgreater; $d$ b.Modularanalogoscilloscopesystemshaving <& & eitherofthefollowingcharacteristics: ' '   b.1.Amainframewithabandwidthof1GHz (") orgreater;or )t#*   b.2.Plug-inmoduleswithanindividual L+$%, bandwidthof4GHzorgreater; $,%- Їc.Analogsamplingoscilloscopesfortheanalysis (- ofrecurringphenomenawithaneffective . bandwidthgreaterthan4GHz; / d.Digitaloscilloscopesandtransientrecorders,  `1 usinganalog-to-digitalconversiontechniques, ` 82 capableofstoringtransientsbysequentially 8 3 samplingsingle-shotinputsatsuccessiveintervals  4 oflessthan1ns(greaterthan1giga-sampleper  5 second),digitizingto8bitsorgreaterresolution  6 andstoring256ormoresamples. p7  D Note: Speciallydesignedcomponents H 9 controlledbythisitemarethefollowing,for " : analogoscilloscopes:  ;  D 1.Plug-inunits;  =  D 2.Externalamplifiers; Z2?  D 3.Pre-amplifiers;  A  D 4.Samplingdevices; C  D 5.Cathoderaytubes. jBE  3A980Voiceprintidentificationandanalysis H equipmentandparts,n.e.s.  I  LicenseRequirements  zRK  D ReasonforControl:CC *!M Control(s)         L  x CountryChart "O  D CCappliestoentireentry L  x CCColumn1 $bQ  LicenseExceptions  :& S  D LVS:  N/A   '!U  D GBS:  N/A   ("V  D CIV:  N/A )v#W   &,%Z ListofItemsControlled  (   Unit:Equipmentinnumber    RelatedControls:N/A    RelatedDefinitions:N/A  `   Items: ` 8 Thelistofitemscontrollediscontainedinthe   ECCNheading.    3A981Polygraphs(exceptbiomedical pH  recordersdesignedforuseinmedicalfacilities H  formonitoringbiologicalandneurophysical    responses);fingerprintanalyzers,camerasand   equipment,n.e.s.;automatedfingerprintand   identificationretrievalsystems,n.e.s.;   psychologicalstressanalysisequipment; X electronicmonitoringrestraintdevices;and X0 speciallydesignedpartsandaccessories,n.e.s.  0  LicenseRequirements     ReasonforControl:CC h Control(s) 4  `      CountryChart @ CCappliestoentireentry   CCColumn1   LicenseExceptions     LVS: 4 N/A  |T   GBS: 4 N/A  T ,   CIV: 4 N/A ,!   ListofItemsControlled  ""   Unit:Equipmentinnumber $d$   RelatedControls:N/A d%<%   RelatedDefinitions:N/A <& &   Items: ' ' Thelistofitemscontrollediscontainedinthe (") ECCNheading. )t#*   $,%- % * 3A991Electronicdevicesandcomponentsnot (- controlledby3A001.  . %*S LicenseRequirements  0 &w%%&w D ReasonforControl:AT ` 82 Control(s)         L  x CountryChart  4  D ATappliestoentireentry L 0 x ATColumn1 6x(#x(#  #&w%%&w#&w%%&wLicenseRequirementsNotes:  pH 8 See744.17oftheEARforadditionallicense   : requirementsforcommoditiesclassifiedas  ; 3A991.a.1.#&w%%&w{#&w%%&w   < LicenseExceptions  X>  D LVS:  N/A   4 @  D GBS:  N/A    A  D CIV:  N/A B #&w%%&w}# ListofItemsControlled  lD  D Unit:Equipmentinnumber DF  D RelatedControls:N/A G  D RelatedDefinitions:N/A H  D Items: I a. Microprocessormicrocircuits, |TK  microcomputermicrocircuits,and T ,L microcontrollermicrocircuitshavinganyofthe ,!M following: "N  D a.1.  a.1.Aperformancespeedof5 #P GFLOPSormoreandanarithmeticlogicunit $dQ withanaccesswidthof32bitormore; d%<R  D a.2.Aclockfrequencyrateexceeding25 ' T MHz;or '!U  D a.3.Morethanonef  g f  g dataf  g Ԁorinstructionbusor )t#W serialcommunicationportthatprovidesadirect t*L$X externalinterconnectionbetweenparallel L+$%Y  microprocessormicrocircuitswithatransfer $,%Z  +      rateof2.5Mbyte/s. ' b.Storageintegratedcircuits,asfollows:      b.1.Electricalerasableprogrammable  ` read-onlymemories(EEPROMs)withastorage _ 8 capacity; 7      b.1.a.Exceeding16Mbitsperpackage   forflashmemorytypes;or         b.1.b.Exceedingeitherofthefollowing oH  limitsforallotherEEPROMtypes: G       4 b.1.b.1.Exceeding1Mbitper   package;or        4 b.1.b.2.Exceeding256kbitper X packageandamaximumaccesstimeoflessthan W0 80ns; /   b.2.Staticrandomaccessmemories  (SRAMs)withastoragecapacity:      b.2.a.Exceeding1Mbitperpackage;or g@     b.2.b.Exceeding256kbitperpackage  andamaximumaccesstimeoflessthan25ns;  c.Analog-to-digitalconvertershavinganyofthe x following: wP   c.1.Aresolutionof8bitormore,butless '!  than12bit,withanoutputrategreaterthan100 !! millionwordspersecond; ""   c.2.Aresolutionof12bitwithanoutputrate _%8% greaterthan5millionwordspersecond; 7& &   c.3.Aresolutionofmorethan12bitbut '!( equaltoorlessthan14bitwithanoutputrate (") greaterthan500thousandwordspersecond;or )p#*   c.4.Aresolutionofmorethan14bitwithan G+ %, outputrategreaterthan500thousandwordsper ,%- second. '- d.Fieldprogrammablelogicdeviceshaving / eitherofthefollowing: 0  D d.1.Anequivalentgatecountofmorethan _ 82 5000(2inputgates);or 7 3  D d.2.Atogglefrequencyexceeding100MHz;  5 e.FastFourierTransform(FFT)processors p7 havingaratedexecutiontimefora1,024point oH 8 complexFFToflessthan1ms. G 9 f.Customintegratedcircuitsforwhicheitherthe  ; functionisunknown,orthecontrolstatusofthe  < equipmentinwhichtheintegratedcircuitswillbe  = usedisunknowntothemanufacturer,havingany X> ofthefollowing: W0?  D f.1.Morethan144terminals;or A  D f.2.Atypical basicpropagationdelaytime C oflessthan0.4ns. hD g.Travelingwavetubes,pulsedorcontinuous ?F wave,asfollows: G  D g.1.Coupledcavitytubes,orderivatives I thereof; xJ  D g.2.Helixtubes,orderivativesthereof,with O (L anyofthefollowing: '!M  D  p g.2.a.An instantaneousbandwidthof "O halfanoctaveormore;and #P  D  p g.2.b.Theproductoftheratedaverage _%8R outputpower(expressedinkW)andthe 7& S maximumoperatingfrequency(expressedinGHz) ' T ofmorethan0.2; '!U  D  p g.2.c.An instantaneousbandwidthof )p#W lessthanhalfanoctave;and o*H$X  D  p g.2.d.Theproductoftherated_average ,%Z outputpower(expressedinkW)andthe ' maximumoperatingfrequency(expressedin_GHz_)  ofmorethan0.4;  h.Flexiblewaveguidesdesignedforuseat  ` frequenciesexceeding40_GHz_; _ 8 _i_.Surfaceacousticwaveandsurfaceskimming   (shallowbulk)acousticwavedevices(i.e., signal   processingdevicesemployingelasticwavesin    materials),havingeitherofthefollowing: p    _i_.1.Acarrierfrequencyexceeding1_GHz_;or G    _i_.2.Acarrierfrequencyof1_GHz_Ԁorless;and       _i_.2.a.Afrequencyside-loberejection   exceeding55Db; X     _i_.2.b.Aproductofthemaximumdelay / timeandbandwidth(timeinmicrosecondsand  bandwidthinMHz)ofmorethan100;or      _i_.2.c.Adispersivedelayofmorethan10 h microseconds. g@ j.Cellsasfollows:    j.1.Primarycellshavinganenergydensityof  550Wh/kgorlessat293K(20C); x   j.2.Secondarycellshavinganenergydensity O ( of250Wh/kgorlessat293K(20C). '!     &w%%&wNote:  4 3A991.j.doesnotcontrolbatteries, "" includingsinglecellbatteries.#&w%%&w#NXXaOX ## N#w#NO#X#OX   TechnicalNotes:  z%S%   1.   Forthepurposeof3A991.jenergydensity V&/ & (Wh/kg)iscalculatedfromthenominalvoltage 0' !' multipliedbythenominalcapacityin (!( ampere-hoursdividedbythemassinkilograms.If (") thenominalcapacityisnotstated,energydensity )#* iscalculatedfromthenominalvoltagesquared *i$+ thenmultipliedbythedischargedurationinhours h+A%, dividedbythedischargeloadinOhmsandthe @,&- massinkilograms. '-  D 2.  p Forthepurposeof3A991.j,a'cell'is . definedasanelectrochemicaldevice,whichhas / positiveandnegativeelectrodes,andelectrolyte, 0 andisasourceofelectricalenergy.Itisthebasic  b1 buildingblockofabattery. a :2  D 3.  p Forthepurposeof3A991.j.1,aprimary 9 3 cellisacellthatisnotdesignedtobecharged  4 byanyothersource.  5  D 4.  p Forthepurposeof3A991.j.2.,a  6 secondarycellisacellthatisdesignedtobe v7 chargedbyanexternalelectricalsource.O#X5#N#aXX# uN 8 % K k. _Superconductive_electromagnetsorsolenoids % : speciallydesignedtobefullychargedor  ; dischargedinlessthanoneminute,havingallof  < thefollowing:  = %Kf D Note: 3A991.kdoesnotcontrol ]6?  _superconductive_electromagnetsorsolenoids 7@ designedforMagneticResonanceImaging(MRI) A medicalequipment. B  D k.1.Maximumenergydeliveredduringthe pD dischargedividedbythedurationofthedischarge oHE ofmorethan500_kJ_Ԁperminute; G F  D k.2.Innerdiameterofthecurrentcarrying H windingsofmorethan250mm;and I  D k.3.Ratedforamagneticinductionofmore XK than8Tor overallcurrentdensityinthe W 0L windingofmorethan300A/mm2. /!M l.Circuitsorsystemsforelectromagneticenergy "O storage,containingcomponentsmanufactured #P from _superconductive_materialsspecially $hQ designedforoperationattemperaturesbelowthe g%@R  criticaltemperatureofatleastoneoftheir ?& S  _superconductive_constituents,havingallofthe ' T following: '!U  D l.1.Resonantoperatingfrequencies )x#W exceeding1MHz; w*P$X  D l.2.Astoredenergydensityof1_MJ_/M3or ',&Z more;and '   l.3.Adischargetimeoflessthan1ms;  m.Hydrogen/hydrogen-isotope_thyratrons_Ԁof  ` ceramic-metalconstructionandrateforapeak _ 8 currentof500Aormore; 7  n.Digitalintegratedcircuitsbasedonany   compoundsemiconductorhavinganequivalent    gatecountofmorethan300(2inputgates). p   % 0 3A992Generalpurposeelectronicequipment   notcontrolledby3A002.    %0 LicenseRequirements    &w%%&w  ReasonforControl:AT W0 Control(s) 4  `      CountryChart    ATappliestoentireentry 0  ATColumn1#&w%%&w#&w%%&wXlX%&w #XlXXXl##&w%XXl#&w%%&w LicenseExceptions  g@   _LVS_: 4 $1000forSyriafor.aonly h     _GBS_: 4 N/A     _CIV_: 4 N/A   ListofItemsControlled  {T   Unit:Equipmentinnumber +!    RelatedControls:N/A "!   RelatedDefinitions:N/A ""   Items: ## % z a.Electronictestequipment,n.e.s.%z" c%<% b.Digitalinstrumentationmagnetictapedata ' ' recordershavinganyofthefollowinganyofthe '!( followingcharacteristics; (")   b.1.Amaximumdigitalinterfacetransferrate s*L$+ exceeding60Mbit/sandemployinghelicalscan K+$%, techniques; #,%- Ї D b.2.Amaximumdigitalinterfacetransferrate '- exceeding120Mbit/sandemployingfixedhead . techniques;or /  D b.3."Spacequalified";  `1 c.Equipment,withamaximumdigitalinterface 7 3 transferrateexceeding60Mbit/s,designedto  4 convertdigitalvideomagnetictaperecordersfor  5 useasdigitalinstrumentationdatarecorders;  6 #&w%%&w# 3A999Specificprocessingequipment,n.e.s.,as G 9 follows(seeListofItemsControlled).  :  LicenseRequirements   <  D ReasonforControl:AT X> Control(s)         L CountryChart /@ ATappliestoentireentry.Alicenseisrequired B foritemscontrolledbythisentrytoNorthKorea C forantiterrorismreasons.TheCommerce hD CountryChartisnotdesignedtodetermineAT g@E licensingrequirementsforthisentry.See742.19 ?F oftheEARforadditionalinformation. G  LicenseExceptions  I  D _LVS_:  N/A wPK  D _GBS_:  N/A O (L  D _CIV_:  N/A '!M  ListofItemsControlled  "O  D Unit:$value $`Q 0 D RelatedControls:&w%%&wSeealso#&w%%&w#Ԁ&w%%&w0B002,4Z1 !O  5  3A22565!OI2.d.  7!wԀ(for _%8R frequencychangescapableofoperatinginthe 7& S frequencyrangeof600Hzandabove),#&w%%&w#&w%%&wԀ4\8!!O  5  3A2336!O  7an,##&w%%&w#' TD(#D(#  D RelatedDefinitions:N/A '!U  D Items: ("V   &w%%&w% x a.#&w%%&w#Frequencychangerscapableofoperatinginthe o*H$X frequencyrangefrom300upto600Hz,n.e.s;%x7 G+ %Y  ,%Z _b.Massspectrometersn.e.s; ' c.Allflashxraymachines,andcomponentsof  pulsedpowersystemsdesignedthereof,including  Marxgenerators,highpowerpulseshaping  ` networks,highvoltagecapacitors,andtriggers; _ 8 d.Pulseamplifiers,n.e.s.;   e.Electronicequipmentfortimedelaygeneration    ortimeintervalmeasurement,asfollows: p    e.1.Digitaltimedelaygeneratorswitha G  resolutionof50nanosecondsorlessovertime   intervalsof1microsecondorgreater;or     e.2.Multichannel(threeormore)ormodular   timeintervalmeterandchronometryequipment X withresolutionof50nanosecondsorlessover W0 timeintervalsof1microsecondorgreater; / &w%%&wf.Chromatographyandspectrometryanalytical  instruments#&w%%&w#.&w%%&w    B.TEST,INSPECTIONAND  PRODUCTIONEQUIPMENT    3B001#&w%%&w#Equipmentforthemanufacturingof wP semiconductordevicesormaterials,&w%%&wԀasfollows O ( (seeListofItemsControlled)#&w%%&w#,andspecially '!  designedcomponentsandaccessoriestherefor.&w%%&w  !!  LicenseRequirements  ##   ReasonforControl:NS,AT _%8% Control(s) 4  `      CountryChart ' '   NSappliestoentireentry   NSColumn2 (") ATappliestoentireentry   ATColumn1 o*H$+   LicenseRequirementNotes :See743.1of ,%- theEARforreportingrequirementsforexports '- underLicenseExceptions. .  LicenseExceptions  0  D #&w%%&w#&w%%&wLVS:0  $500  c <2(#(# 0 D GBS:0D(#D(#Yes,except3B001.a.2(metalorganic ; 3 chemicalvapordepositionreactors),  4 a.3(molecularbeamepitaxialgrowth  5 equipmentusinggassources),.e  6 (automaticloadingmultichamber t7 centralwaferhandlingsystemsonly sL 8 ifconnectedtoequipmentcontrolled K$ 9 by3B001.a.2,a.3,or.f),and.f # : (lithographyequipment).#&w%%&w#&w%%&w ;(#(#  D CIV:0  Yesforequipmentcontrolledby @$"   < 3B001.a.1. =(#(# #&w%%&w!#&w%%&w ListofItemsControlled  [4?  D Unit:Number  A  D RelatedControls:Seealso4^!O  5  3B9916!Oxcee  7  B  D RelatedDefinitions:N/A C  D Items: lD #&w%%&w#&w%%&wa.Equipmentdesignedforepitaxialgrowth,as CF follows: G  D a.1.  Equipmentcapableofproducinga I layerofanymaterialotherthansiliconwitha |J thicknessuniformtolessthan2.5%acrossa {TK distanceof75mmormore; S ,L  D a.2.Metalorganicchemicalvapordeposition "N (MOCVD)reactorsspeciallydesignedfor "O compoundsemiconductorcrystalgrowthbythe #P chemicalreactionbetweenmaterialscontrolledby $dQ 3C003or3C004; c%<R  D a.3.Molecularbeamepitaxialgrowth ' T equipmentusinggasorsolidsources; '!U b.Equipmentdesignedforionimplantation, )t#W havinganyofthefollowing: s*L$X  D b.1.Abeamenergy(acceleratingvoltage) #,%Z exceeding1MeV; '   b.2.Beingspeciallydesignedandoptimized  tooperateatabeamenergy(acceleratingvoltage  oflessthan2keV;  `   b.3.Directwritecapability;or 7    b.4.Abeamenergyof65keVormoreanda   beamcurrentof45mAormoreforhighenergy    oxygenimplantintoaheatedsemiconductor p  material substrate; oH  c.Anisotropicplasmadryetchingequipment,as   follows:     c.1.Equipmentwithcassette-to-cassette   operationandload-locks,andhavinganyofthe X following: W0     c.1.a.Designedoroptimizedtoproduce  criticaldimensionsof180nmorlesswith5%3  sigmaprecision;or      c.1.b.Designedforgeneratinglessthan g@ 0.04particles/cmwithameasurableparticlesize ? greaterthan0.1%mindiameter;    c.2.Equipmentspeciallydesignedfor  equipmentcontrolledby3B001.e.andhavingany x ofthefollowing: wP     c.2.a.Designedoroptimizedtoproduce '!  criticaldimensionsof180nmorlesswith5%3 !! sigmaprecision;or ""     c.2.b.Designedforgeneratinglessthan $`$ 0.04particles/cmwithameasurableparticlesize _%8% greaterthan0.1%mindiameter; 7& & d.PlasmaenhancedCVDequipment,asfollows: '!(   d.1.Equipmentwithcassette-to-cassette )p#* operationandload-locks,anddesignedaccording o*H$+ tothemanufacturer'sspecificationsoroptimized G+ %, foruseintheproductionofsemiconductor ,%- deviceswithcriticaldimensionsof180nmor '- less; .  D d.2.Equipmentspeciallydesignedfor 0 equipmentcontrolledby3B001.e.anddesigned  `1 accordingtothemanufacturer'sspecificationsor _ 82 optimizedforuseintheproductionof 7 3 semiconductordeviceswithcriticaldimensionsof  4 180nmorless;  5 e.Automaticloadingmulti-chambercentralwafer p7 handlingsystems,havingallofthefollowing: oH 8  D e.1.Interfacesforwaferinputandoutput,to  : whichmorethantwopiecesofsemiconductor  ; processingequipmentaretobeconnected;and  <  D e.2.Designedtoformanintegratedsystemin X> avacuumenvironmentforsequentialmultiple W0? waferprocessing; /@  D Note: 3B001.e.doesnotcontrolautomatic B roboticwaferhandlingsystemsnotdesignedto C operateinavacuumenvironment. lD f.Lithographyequipment,asfollows: CF  D f.1.Alignandexposestepandrepeat(direct H steponwafer)orstepandscan(scanner) I equipmentforwaferprocessingusing |J photo-opticalorX-raymethods,havinganyofthe {TK following: S ,L  D  p f.1.a.Alightsourcewavelengthshorter "N than245nm;or "O  D  p f.1.b.Capableofproducingapatternwith $dQ aminimumresolvablefeaturesizeof180nmor c%<R less; ;& S  D TechnicalNote: Theminimumresolvable '!U featuresizeiscalculatedbythefollowing ("V formula: )x#W _ ',&Z _MRF_Ԁ= '   (anexposurelightsourcewavelengthin_nm_)x  (Kfactor)  !  -------------------------------------------------------  ` Ѐ0 4 numericalaperture_ 844 wheretheKfactor=0.45   _MRF_Ԁ=minimumresolvablefeaturesize.       f.2Imprintlithographyequipmentcapableof p  productionfeaturesof180_nm_Ԁorless. oH      Note: 3B001.f.2includes:        4  `     - 4 Microcontactprintingtools       - 4 Hotembossingtools       - 4 Nano-imprintlithographytools Z     - 4 Stepandflashimprintlithography Y2 (S-FIL)tools 1    f.3.Equipmentspeciallydesignedformask  makingorsemiconductordeviceprocessingusing  deflectedfocusedelectronbeam,ionbeamor j  laserbeam,havinganyofthefollowing: iB     f.3.a.Aspotsizesmallerthan0.2%m;      f.3.b.Beingcapableofproducinga  patternwithafeaturesizeoflessthan1%m;or z     f.3.c.Anoverlayaccuracyofbetterthan Q * 0.20%m(3sigma);#&w%%&w #&w%%&w )!  g.Masksandreticlesdesignedforintegrated "" circuitscontrolledby3A001; ## h.Multi-layermaskswithaphaseshiftlayer. a%:%   Note:  4 3B001.h.doesnotcontrolmulti-layer ' ' maskswithaphaseshiftlayerdesignedforthe '!( fabricationofmemorydevicesnotcontrolledby (") 3A001.#&w%%&wL#&w%%&w )v#* #&w%%&wS#&w%%&w_i_.Imprintlithographytemplatesdesignedfor M+&%, integratedcircuitsby3A001.#&w%%&w# %,%- Ї &w%%&w3B002Testequipment,speciallydesignedfor '- testingfinishedorunfinishedsemiconductor . devices,asfollows(seeListofItems / Controlled),andspeciallydesigned 0 componentsandaccessoriestherefor.#&w%%&w#&w%%&w   `1  LicenseRequirements  7 3  D ReasonforControl:NS,AT  5 Control(s)         L  x CountryChart p7 NSappliestoentireentry L  x NSColumn2 G 9 ATappliestoentireentry L  x ATColumn1  ;  LicenseExceptions   =  D _LVS_:  $500   [4?  D _GBS_:  Yes 3 @  D _CIV_:  N/A  A #&w%%&w# ListofItemsControlled  C  D Unit:Number kDE &w%%&wXlX%&w#XlXXXl##&w%XXl#0 D RelatedControls:Seealso4yb6!O  5  3A999.a69!OMhigh  7or!{Ԁand CF 4`paD!O  5  3B9926!O lity  7pa.@ /GD(#D(#  D RelatedDefinitions:N/A H  D Items: J &w%%&wa.FortestingS-parametersoftransistordevices g @L atfrequenciesexceeding31.8_GHz_; ?!M b.[RESERVED] "O c.Fortestingmicrowaveintegratedcircuits $xQ controlledby3A001.b.2.#&w%%&w5!# w%PR &w%%&w  7,&Z _ԇ% ] 3B991Equipmentnotcontrolledby3B001for ' themanufactureofelectroniccomponentsand  materials,andspeciallydesignedcomponents  andaccessoriestherefor.  %]" LicenseRequirements  _ 8   ReasonforControl:AT   Control(s) 4  `      CountryChart      ATappliestoentireentry   ATColumn1 oH   LicenseExceptions      LVS: 4 N/A      GBS: 4 N/A      CIV: 4 N/A \ #&w%%&w"# ListofItemsControlled  3  0  Unit:Equipmentinnumber,andcomponents  andaccessoriesin$value   RelatedControls:N/A l 0  RelatedDefinitions:Sputteringisanoverlay kD coatingprocesswhereinpositivelycharged C ionsareacceleratedbyanelectricfield  towardsthesurfaceofatarget(coating  material).Thekineticenergyoftheimpacting  ionsissufficienttocausetargetsurfaceatoms | tobereleasedanddepositedonthesubstrate. {T (Note:Triode,magnetronorradiofrequency S , sputteringtoincreaseadhesionofcoatingand +!  rateofdepositionareordinarymodifications "! oftheprocess.)""   Items: ## &w%%&wa.Equipmentspeciallydesignedforthe c%<% manufactureofelectrontubes,opticalelements ;& & andspeciallydesignedcomponentstherefor ' ' controlledby3A001or3A991; '!( b.Equipmentspeciallydesignedforthe )t#* manufactureofsemiconductordevices,integrated s*L$+ circuitsand electronicassemblies,asfollows, K+$%, andsystemsincorporatingorhavingthe #,%- characteristicsofsuchequipment: '-  D Note: 3B991.balsocontrolsequipmentused / ormodifiedforuseinthemanufactureofother 0 devices,suchasimagingdevices,electro-optical  d1 devices,acoustic-wavedevices. c <2  D b.1.Equipmentfortheprocessingof  4 materialsforthemanufactureofdevicesand  5 componentsasspecifiedintheheadingof  6 3B991.b,asfollows: t7  D Note: 3B991doesnotcontrolquartzfurnace K$ 9 tubes,furnaceliners,paddles,boats(except ' : speciallydesignedcagedboats),bubblers,  ; cassettesorcruciblesspeciallydesignedforthe  < processingequipmentcontrolledby3B991.b.1.  =  D  p b.1.a.Equipmentforproducing _8? polycrystallinesiliconandmaterialscontrolledby 7@ 3C001; A % b  D  p b.1.b.Equipmentspeciallydesignedfor C purifyingorprocessingIII/VandII/VI pD semiconductormaterialscontrolledby3C001, oHE 3C002,3C003,3C004,or3C005exceptcrystal G F pullers,forwhichsee3B991.b.1.cbelow;#&w%%&w`*#&w%%&w G %b0 D  p b.1.c.Crystalpullersandfurnaces,as I follows: J  D Note: 3B991.b.1.cdoesnotcontroldiffusion W 0L andoxidationfurnaces. 3! M  D  p   b.1.c.1.Annealingorrecrystallizing "O equipmentotherthanconstanttemperature #P furnacesemployinghighratesofenergytransfer $lQ capableofprocessingwafersatarateexceeding k%DR 0.005m2perminute; C& S  D  p   b.1.c.2. Storedprogramcontrolled '!U crystalpullershavinganyofthefollowing ("V characteristics: )|#W  D  p     b.1.c.2.a.Rechargeablewithout S+,%Y replacingthecruciblecontainer; +,&Z Ї     4  ` b.1.c.2.b.Capableofoperationat ' pressuresabove2.5x105Pa;or       4  ` b.1.c.2.c.Capableofpulling  crystalsofadiameterexceeding100mm;  `     b.1.d. Storedprogramcontrolled 7  equipmentforepitaxialgrowthhavinganyofthe   followingcharacteristics:        4 b.1.d.1.Capableofproducinga p  siliconlayerwithathicknessuniformtolessthan oH  2.5%acrossadistanceof200mmormore; G       4 b.1.d.2.Capableofproducingalayer   ofanymaterialotherthansiliconwithathickness   uniformityacrossthewaferofequaltoorbetter   than3.5%;or X      4 b.1.d.3.Rotationofindividualwafers / duringprocessing;      b.1.e.Molecularbeamepitaxialgrowth  equipment; h     b.1.f.Magneticallyenhancedsputtering ? equipmentwithspeciallydesignedintegralload  lockscapableoftransferringwafersinanisolated  vacuumenvironment;      b.1.g.Equipmentspeciallydesignedfor wP ionimplantation,ion-enhancedorphoto-enhanced O ( diffusion,havinganyofthefollowing '!  characteristics: !!      4 b.1.g.1.Patterningcapability; ##      4 b.1.g.2.Beamenergy(accelerating _%8% voltage)exceeding200keV; 7& &      4 b.1.g.3Optimizedtooperateata '!( beamenergy(acceleratingvoltage)oflessthan10 (") keV;or )p#*      4 b.1.g.4.Capableofhighenergy G+ %, oxygenimplantintoaheated substrate; ,%- Ї D  p b.1.h. Storedprogramcontrolled '- equipmentfortheselectiveremoval(etching)by . meansofanisotropicdrymethods(e.g.,plasma), / asfollows: 0  D  p   b.1.h.1.Batchtypeshavingeitherof _ 82 thefollowing: 7 3  D  p     b.1.h.1.a.End-pointdetection,  5 otherthanopticalemissionspectroscopytypes;or  6  D  p     b.1.h.1.b.Reactoroperational oH 8 (etching)pressureof26.66Paorless; G 9  D  p   b.1.h.2.Singlewafertypeshaving  ; anyofthefollowing:  <  D  p     b.1.h.2.a.End-pointdetection, X> otherthanopticalemissionspectroscopytypes; W0?  D  p     b.1.h.2.b.Reactoroperational A (etching)pressureof26.66Paorless;or B  D  p     b.1.h.2.c.Cassette-to-cassetteand hD loadlockswaferhandling; g@E ̀ Notes: 1. Batchtypesreferstomachinesnot G speciallydesignedforproductionprocessingof H singlewafers.Suchmachinescanprocesstwoor I morewaferssimultaneouslywithcommonprocess |J parameters,e.g.,RFpower,temperature,etchgas {TK species,flowrates. S ,L ̀2. Singlewafertypesreferstomachines "N speciallydesignedforproductionprocessingof "O singlewafers.Thesemachinesmayuseautomatic #P waferhandlingtechniquestoloadasinglewafer $dQ intotheequipmentforprocessing.Thedefinition c%<R includesequipmentthatcanloadandprocess ;& S severalwafersbutwheretheetchingparameters, ' T e.g.,RFpowerorendpoint,canbeindependently '!U determinedforeachindividualwafer. ("V  D  p b.1.i. Chemicalvapordeposition s*L$X (CVD)equipment,e.g.,plasma-enhancedCVD K+$%Y (PECVD)orphoto-enhancedCVD,for #,%Z semiconductordevicemanufacturing,having ' eitherofthefollowingcapabilities,fordeposition  ofoxides,nitrides,metalsorpolysilicon:       4 b.1.i.1. Chemicalvapordeposition  ` equipmentoperatingbelow105Pa;or _ 8      4 b.1.i.2.PECVDequipmentoperating   eitherbelow60Pa(450millitorr)orhaving   automaticcassette-to-cassetteandloadlockwafer    handling; p    Note: 3B991.b.1.idoesnotcontrollow G  pressure chemicalvapordeposition(LPCVD) #  systemsorreactive sputteringequipment.       b.1.j.Electronbeamsystemsspecially   designedormodifiedformaskmakingor \ semiconductordeviceprocessinghavinganyof [4 thefollowingcharacteristics: 3       4 b.1.j.1.Electrostaticbeamdeflection;       4 b.1.j.2.Shaped,non-Gaussianbeam l profile; kD      4 b.1.j.3.Digital-to-analogconversion  rateexceeding3MHz;       4 b.1.j.4.Digital-to-analogconversion | accuracyexceeding12bit;or {T      4 b.1.j.5.Target-to-beamposition +!  feedbackcontrolprecisionof1micrometeror "! finer; ""   Note: 3B991.b.1.jdoesnotcontrolelectron $d$ beamdepositionsystemsorgeneralpurpose g%@% scanningelectronmicroscopes. ?& &     b.1.k.Surfacefinishingequipmentforthe '!( processingofsemiconductorwafersasfollows: (")      4 b.1.k.1.Speciallydesigned w*P$+ equipmentforbacksideprocessingofwafers O+(%, thinnerthan100micrometerandthesubsequent ',&- separationthereof;or '-  D  p   b.1.k.2.Speciallydesigned / equipmentforachievingasurfaceroughnessof 0 theactivesurfaceofaprocessedwaferwitha  `1 two-sigmavalueof2micrometerorless,total _ 82 indicatorreading(TIR); 7 3 ̀ D Note: 3B991.b.1.kdoesnotcontrol  5 single-sidelappingandpolishingequipmentfor  6 wafersurfacefinishing. t7  D  p b.1.l.Interconnectionequipmentwhich K$ 9 includescommonsingleormultiplevacuum # : chambersspeciallydesignedtopermitthe  ; integrationofanyequipmentcontrolledby3B991  < intoacompletesystem;  =  D  p b.1.m. Storedprogramcontrolled [4? equipmentusing lasersfortherepairor 3 @ trimmingof monolithicintegratedcircuitswith  A eitherofthefollowingcharacteristics: B  D  p   b.1.m.1.Positioningaccuracyless lD than1micrometer;or kDE  D  p   b.1.m.2.Spotsize(kerfwidth)less G than3micrometer. H  D b.2.Masks,mask substrates,mask-making |J equipmentandimagetransferequipmentforthe {TK manufactureofdevicesandcomponentsas S ,L specifiedintheheadingof3B991,asfollows: +!M  D Note: Theterm masksreferstothoseused "O inelectronbeamlithography,X-raylithography, #P andultravioletlithography,aswellastheusual $hQ ultravioletandvisiblephoto-lithography. g%@R  D  p b.2.a.Finishedmasks,reticlesand ' T designstherefor,except: '!U  D  p   b.2.a.1.Finishedmasksorreticlesfor )x#W theproductionofunembargoedintegrated w*P$X circuits;or O+(%Y  ',&Z      4 b.2.a.2.Masksorreticles,having ' bothofthefollowingcharacteristics:       4  ` b.2.a.2.a.Theirdesignisbased  ongeometriesof2.5micrometerormore;and  `      4  ` b.2.a.2.b.Thedesigndoesnot 7  includespecialfeaturestoaltertheintendeduse   bymeansofproductionequipmentor software;       b.2.b.Mask substratesasfollows: p       4 b.2.b.1.Hardsurface(e.g., G  chromium,silicon,molybdenum)coated    substrates(e.g.,glass,quartz,sapphire)forthe   preparationofmaskshavingdimensions   exceeding125mmx125mm;or        4 b.2.b.2. Substratesspecially W0 designedforX-raymasks; /     b.2.c.Equipment,otherthangeneral  purposecomputers,speciallydesignedfor  computeraideddesign(CAD)ofsemiconductor h devicesorintegratedcircuits; g@     b.2.d.Equipmentormachines,as  follows,formaskorreticlefabrication:       4 b.2.d.1.Photo-opticalstepandrepeat x camerascapableofproducingarrayslargerthan wP 100mmx100mm,orcapableofproducinga O ( singleexposurelargerthan6mmx6mminthe '!  image(i.e.,focal)plane,orcapableofproducing !! linewidthsoflessthan2.5micrometerinthe "" photoresistonthe substrate; ##      4 b.2.d.2.Maskorreticlefabrication _%8% equipmentusingionor laserbeamlithography 7& & capableofproducinglinewidthsoflessthan2.5 ' ' micrometer;or '!(      4 b.2.d.3.Equipmentorholdersfor )p#* alteringmasksorreticlesoraddingpelliclesto o*H$+ removedefects; G+ %,  ,%- Ѐ D Note: 3B991.b.2.d.1andb.2.d.2donot '- controlmaskfabricationequipmentusing . photo-opticalmethodswhichwaseither / commerciallyavailablebeforethe1stJanuary, 0 1980,orhasaperformancenobetterthansuch  d1 equipment. c <2  D  p b.2.e. Storedprogramcontrolled  4 equipmentfortheinspectionofmasks,reticlesor  5 pellicleswith:  6  D  p   b.2.e.1.Aresolutionof0.25 sL 8 micrometerorfiner;and K$ 9  D  p   b.2.e.2.Aprecisionof0.75  ; micrometerorfineroveradistanceinoneortwo  < coordinatesof63.5mmormore;  =  D Note: 3B991.b.2.edoesnotcontrolgeneral [4? purposescanningelectronmicroscopesexcept 7@ whenspeciallydesignedandinstrumentedfor A automaticpatterninspection. B  D  p b.2.f.Alignandexposeequipmentfor pD waferproductionusingphoto-opticalorX-ray oHE methods,e.g.,lithographyequipment,including G F bothprojectionimagetransferequipmentandstep G andrepeat(directsteponwafer)orstepandscan H (scanner)equipment,capableofperformingany I ofthefollowingfunctions: J  D Note: 3B991.b.2.fdoesnotcontrol W 0L photo-opticalcontactandproximitymaskalign 3! M andexposeequipmentorcontactimagetransfer  "N equipment. "O  D  p      D  p   b.2.f.1.Productionofapatternsize $lQ oflessthan2.5micrometer; k%DR  D  p   b.2.f.2.Alignmentwithaprecision ' T finerthan0.25micrometer(3sigma); '!U  D  p   b.2.f.3.Machine-to-machineoverlay )|#W nobetterthan0.3micrometer;or {*T$X  D  p   b.2.f.4.Alightsource_wavelength +,&Z shorterthan400_nm_; '     b.2.g.Electronbeam,ionbeamorX-ray  equipmentforprojectionimagetransfercapable  ofproducingpatternslessthan2.5micrometer;  `   Note: Forfocused,deflected-beamsystems 7  (directwritesystems),see3B991.b.1.jorb.10.       b.2.h.Equipmentusing lasersfordirect    writeonwaferscapableofproducingpatternsless t  than2.5micrometer. sL    b.3.Equipmentfortheassemblyofintegrated #  circuits,asfollows:       b.3.a. Storedprogramcontrolleddie   _bonders_Ԁhavingallofthefollowing \ characteristics: [4      4 b.3.a.1.Speciallydesignedfor    hybridintegratedcircuits;       4 b.3.a.2.X-Ystagepositioningtravel l exceeding37.5x37.5mm;and kD      4 b.3.a.3.Placementaccuracyinthe  X-Yplaneoffinerthan10micrometer;      b.3.b. Storedprogramcontrolled | equipmentforproducingmultiplebondsina {T singleoperation(e.g.,beamlead_bonders_,chip S , carrier_bonders_,tape_bonders_); +!      b.3.c.Semi-automaticorautomatichot "" capsealers,inwhichthecapisheatedlocallytoa ## highertemperaturethanthebodyofthepackage, $d$ speciallydesignedforceramicmicrocircuit c%<% packagescontrolledby3A001andthathavea ;& & throughputequaltoormorethanonepackageper ' ' minute. '!(   Note: 3B991.b.3doesnotcontrolgeneral )t#* purposeresistancetypespotwelders. w*P$+   b.4.Filtersforcleanroomscapableof ',&- providinganairenvironmentof10orless '- particlesof0.3micrometerorsmallerper0.02832 . _m3_andfiltermaterialstherefor.#&w%%&wE2#&w%%&w / #&w%%&w{# % _ 3B992Equipmentnotcontrolledby3B002for _ 82 theinspectionortestingofelectronic 7 3 componentsandmaterials,andspecially  4 designedcomponentsandaccessoriestherefor.   5 %_v{ LicenseRequirements  p7  D  p          L  x    D ReasonforControl:AT G 9 Control(s)         L  x CountryChart  ; ATappliestoentireentry L  x ATColumn1  =  LicenseExceptions  W0?  D _LVS_:  N/A   A  D _GBS_:  N/A   B  D _CIV_:  N/A C  ListofItemsControlled  g@E  D Unit:Equipmentinnumber G &w%%&wXlX%&w#XlXXXl##&w%XXl# D RelatedControls:Seealso4{!O  5  3A992.a6!OĀԀ  7 . H  D RelatedDefinitions:N/A I  D Items: J &w%%&wa.Equipmentspeciallydesignedfortheinspection c <L ortestingofelectrontubes,opticalelementsand ;!M speciallydesignedcomponentsthereforcontrolled "N by3A001or3A991; "O b.Equipmentspeciallydesignedfortheinspection $tQ ortestingofsemiconductordevices,integrated s%LR circuitsand"electronicassemblies",asfollows, K&$ S andsystemsincorporatingorhavingthe #' T characteristicsofsuchequipment: '!U  D Note: 3B992.balsocontrolsequipmentused )#W ormodifiedforuseintheinspectionortestingof *`$X otherdevices,suchasimagingdevices, _+8%Y electro-opticaldevices,acoustic-wavedevices. 7,&Z _ԇ  b.1."Storedprogramcontrolled"inspection ' equipmentfortheautomaticdetectionofdefects,  errorsorcontaminantsof0.6micrometerorless  inoronprocessedwafers,"substrates",otherthan  printedcircuitboardsorchips,usingoptical  ` imageacquisitiontechniquesforpattern _ 8 comparison; 7    Note: 3B992.b.1doesnotcontrolgeneral   purposescanningelectronmicroscopes,except    whenspeciallydesignedandinstrumentedfor t  automaticpatterninspection. sL    b.2.Speciallydesigned storedprogram #  controlledmeasuringandanalysisequipment,as   follows:       b.2.a.Speciallydesignedforthe \ measurementofoxygenorcarboncontentin [4 semiconductormaterials; 3      b.2.b.Equipmentforlinewidth  measurementwitharesolutionof1micrometeror  finer; l     b.2.c.Speciallydesignedflatness C measurementinstrumentscapableofmeasuring  deviationsfromflatnessof10micrometerorless  witharesolutionof1micrometerorfiner.    b.3. Storedprogramcontrolledwafer {T probingequipmenthavinganyofthefollowing S , characteristics: `   +!      b.3.a.Positioningaccuracyfinerthan3.5 "" micrometer; ##     b.3.b.Capableoftestingdeviceshaving c%<% morethan68terminals;or ;& &     b.3.c.Capableoftestingatafrequency '!( exceeding1GHz; (")   b.4.Testequipmentasfollows: s*L$+     b.4.a. Storedprogramcontrolled #,%- equipmentspeciallydesignedfortestingdiscrete '- semiconductordevicesandunencapsulateddice, . capableoftestingatfrequenciesexceeding18 / GHz; 0  D TechnicalNote: Discretesemiconductor _ 82 devicesincludephotocellsandsolarcells. ; 3  D  p b.4.b. Storedprogramcontrolled  5 equipmentspeciallydesignedfortesting  6 integratedcircuitsand"electronicassemblies" t7 thereof,capableoffunctionaltesting: sL 8  D  p   b.4.b.1.Atapatternrateexceeding # : 20MHz;or  ;  D  p   b.4.b.2.Atapatternrateexceeding  = 10MHzbutnotexceeding20MHzandcapableof \> testingpackagesofmorethan68terminals. [4?  D  D Notes: 󀀀3B992.b.4.bdoesnotcontroltest  A equipmentspeciallydesignedfortesting: B ̀1.Memories; pD  D 2. Assembliesoraclassof"electronic G F assemblies"forhomeandentertainment G applications;and H  D 3.Electroniccomponents,"assemblies"and J integratedcircuitsnotcontrolledby3A001or XK 3A991providedsuchtestequipmentdoesnot W 0L incorporatecomputingfacilitieswith"user /!M accessibleprogrammability". "N  D TechnicalNote: Forpurposesof #P 3B992.b.4.b,patternrateisdefinedasthe $lQ maximumfrequencyofdigitaloperationofa k%DR tester.Itisthereforeequivalenttothehighest C& S dataratethatatestercanprovidein ' T non-multiplexedmode.Itisalsoreferredtoas '!U testspeed,maximumdigitalfrequencyor ("V maximumdigitalspeed. )|#W  D  p b.4.c.Equipmentspeciallydesignedfor S+,%Y determiningtheperformanceoffocal-planearrays +,&Z atwavelengthsofmorethan1,200nm,using '  storedprogramcontrolledmeasurementsor  computeraidedevaluationandhavinganyofthe  followingcharacteristics:       4 b.4.c.1.Usingscanninglightspot _ 8 diametersoflessthan0.12mm; 7       4 b.4.c.2.Designedformeasuring   photosensitiveperformanceparametersandfor    evaluatingfrequencyresponse,modulation p  transferfunction,uniformityofresponsivityor oH  noise;or G       4 b.4.c.3.Designedforevaluating   arrayscapableofcreatingimageswithmorethan   32x32lineelements;     b.5.Electronbeamtestsystemsdesignedfor W0 operationat3keVorbelow,or laserbeam / systems,fornon-contactiveprobingof  powered-upsemiconductordeviceshavinganyof  thefollowing:      b.5.a.Stroboscopiccapabilitywitheither g@ beamblankingordetectorstrobing; ?     b.5.b.Anelectronspectrometerfor  voltagemeasurementswitharesolutionofless  than0.5V;or x     b.5.c.Electricaltestsfixturesfor O ( performanceanalysisofintegratedcircuits; '!    Note: 3B992.b.5doesnotcontrolscanning "" electronmicroscopes,exceptwhenspecially ## designedandinstrumentedfornon-contactive $d$ probingofapowered-upsemiconductordevice. c%<%   b.6. Storedprogramcontrolled ' ' multifunctionalfocusedionbeamsystems '!( speciallydesignedformanufacturing,repairing, (") physicallayoutanalysisandtestingofmasksor )t#* semiconductordevicesandhavingeitherofthe s*L$+ followingcharacteristics: K+$%,  #,%-  D  p b.6.a.Target-to-beampositionfeedback '- controlprecisionof1micrometerorfiner;or .  D  p b.6.b.Digital-to-analogconversion 0 accuracyexceeding12bit;  `1  D b.7.Particlemeasuringsystemsemploying 7 3  lasersdesignedformeasuringparticlesizeand  4 concentrationinairhavingbothofthefollowing  5 characteristics:  6  D  p b.7.a.Capableofmeasuringparticlesizes oH 8 of0.2micrometerorlessataflowrateof0.02832 G 9 m3perminuteormore;and  :  D  p b.7.b.CapableofcharacterizingClass10  < cleanairorbetter.  = #&w%%&w߁#  C.MATERIALS  /@ ڤ 3C001Hetero-epitaxialmaterialsconsistingof C a"substrate"havingstackedepitaxiallygrown hD multiplelayersofanyofthefollowing(seeList g@E ofItemsControlled).  ?F  LicenseRequirements  H  D ReasonforControl:NS,AT xJ Control(s)         L  x CountryChart O (L  D NSappliestoentireentry L  x NSColumn2 !N ATappliestoentireentry L  x ATColumn1 #P  LicenseExceptions  _%8R  D LVS:  $3000   ' T  D GBS:  N/A   '!U  D CIV:  N/A ("V  ListofItemsControlled  s*L$X  D Unit:$value #,%Z 0  RelatedControls:Thisentrydoesnotcontrol ' equipmentormaterialwhosefunctionalityhas  beenunalterablydisabledarenotcontrolled. 0  RelatedDefinitions:III/Vcompoundsare  polycrystallineorbinaryorcomplex  ` monocrystallineproductsconsistingof _ 8 elementsofgroupsIIIAandVAof 7  Mendeleyev'speriodicclassificationtable   (e.g.,galliumarsenide,gallium-aluminium   arsenide,indiumphosphide).     Items: p  a.Silicon; G  b.Germanium;   c.SiliconCarbide;or   d.III/Vcompoundsofgalliumorindium. W0     3C002Resistmaterials,asfollows(seeListof  ItemsControlled),and substratescoated  withcontrolledresists.  h  LicenseRequirements  ?   ReasonforControl:NS,AT  Control(s) 4  `      CountryChart x NSappliestoentireentry   NSColumn2 O ( ATappliestoentireentry   ATColumn1 !!  LicenseExceptions  ##   &w%%&wLVS:0 4 $3000c%<%44 0  GBS:04Yesforpositiveresistsnotoptimized ;& & forphotolithographyatawavelength ' ' oflessthan365nm,providedthat '!( theyarenotcontrolledby3C002.b (") through.d.)t#*44 0  CIV:04Yesforpositiveresistsnotoptimized s*L$+ forphotolithographyatawavelength K+$%, oflessthan365nm,providedthat#,%-44 theyarenotcontrolledby3C002.b '- through.d..(#(# #&w%%&wH#&w%%&w ListofItemsControlled  0  D Unit:$value _ 82  D RelatedControls:N/A 7 3 0 D RelatedDefinitions:Silylationtechniquesare  4 definedasprocessesincorporatingoxidation  5 oftheresistsurfacetoenhanceperformance  6 forbothwetanddrydeveloping.p7D(#D(#  D Items: oH 8 #&w%%&w(#a.Positiveresistsdesignedforsemiconductor  : lithographyspeciallyadjusted(optimized)foruse  ; atwavelengthsbelow245nm;&w%%&w  < b.Allresistsdesignedforusewithelectron X> beamsorionbeams,withasensitivityof0.01 W0? coulomb/mm2orbetter; /@ c.AllresistsdesignedforusewithX-rays,with B asensitivityof2.5mJ/mm2orbetter; C d.Allresistsoptimizedforsurfaceimaging g@E technologies,includingsilylatedresists. ?F  3C003Organo-inorganiccompounds,as I follows(seeListofItemsControlled).  xJ  LicenseRequirements  O (L  D ReasonforControl:NS,AT !N Control(s)         L  x CountryChart #P  D NSappliestoentireentry L  x NSColumn2 _%8R ATappliestoentireentry L  x ATColumn1 ' T  LicenseExceptions  ("V  D LVS:  $3000   o*H$X  D GBS:  N/A   G+ %Y  D CIV:  N/A  ,%Z ListofItemsControlled  '   Unit:$value  0  RelatedControls:Thisentrycontrolsonly  compoundswhosemetallic,partlymetallicor  ` nonmetallicelementisdirectlylinkedto _ 8 carbonintheorganicpartofthemolecule.7  0  RelatedDefinition:N/A    Items:   a.Organo-metalliccompoundsofaluminium, p  galliumorindiumhavingapurity(metalbasis) oH  betterthan99.999%; G  b.Organo-arsenic,organo-antimonyand   organo-phosphoruscompoundshavingapurity   (inorganicelementbasis)betterthan99.999%.        4 3C004Hydridesofphosphorus,arsenicor / antimony,havingapuritybetterthan  99.999%,evendilutedininertgasesor  hydrogen.    LicenseRequirements  g@   ReasonforControl:NS,AT  Control(s) 4  `      CountryChart    NSappliestoentireentry   NSColumn2 wP ATappliestoentireentry   ATColumn1 '!   LicenseExceptions  ""   LVS: 4 $3000  $d$   GBS: 4 N/A  c%<%   CIV: 4 N/A ;& &  ListofItemsControlled  '!(   Unit:$value )t#* 0  RelatedControls:#&w%%&w#N/A&w%%&ws*L$+ 0  RelatedDefinition:N/AK+$%,   Items: #,%- ЇThelistofitemscontrollediscontainedinthe '- ECCNheading. .  #&w%%&w#Note :Thisentrydoesnotcontrolhydrides 0 containing20%molarormoreofinertgasesor  b1 hydrogen.&w%%&w a :2  #&w%%&w#&w%%&w3C005Siliconcarbide(SiC)wafershavinga  5 resistivityofmorethan10,000ohm-cm.   6  LicenseRequirements  qJ 8  D ReasonforControl:NS,AT ! : Control(s)         L  x CountryChart  < NSappliestoentireentry L  x NSColumn2 Z> ATappliestoentireentry L  x ATColumn1 1 @  LicenseExceptions  B  D LVS:  $3000   C  D GBS:  Yes jD  D CIV:  Yes iBE  ListofItemsControlled  G  D Unit:$value I 0 D RelatedControls:SeeECCN4a !O  5  3E0016!O   7!Ԁfor zJ relateddevelopmentandproduction yRK technology,andECCN4can@!O  5  3B991.b.1.b6!Otire  7o!Ԁfor Q *L relatedproductionequipment.)!MD(#D(#  D RelatedDefinition:N/A "N  D Items: "O Thelistofitemscontrollediscontainedinthe $bQ ECCNheading.#&w%%&w#&w%%&w a%:R #&w%%&w#  !,%Z 3C992&w%%&wPositiveresistsdesignedfor ' semiconductorlithographyspeciallyadjusted  (optimized)foruseatwavelengthsbetween370  and245nm.#&w%%&w#    LicenseRequirements  _ 8   ReasonforControl:AT   Control(s) 4  `      CountryChart    ATappliestoentireentry   ATColumn1 oH   LicenseExceptions      LVS:N/A     GBS:N/A     CIV:N/A X  ListofItemsControlled  /   Unit:$value    RelatedControls:N/A    RelatedDefinitions:N/A h   Items: g@ Thelistofitemscontrollediscontainedinthe  ECCNheading.&w%%&w    D.SOFTWARE  wP  3D001"Software"speciallydesignedforthe !! "development"or"production"ofequipment "" controlledby3A001.bto3A002.gor3B(except ## 3B991and3B992).  $`$  LicenseRequirements  7& &   ReasonforControl:NS,AT '!( Control(s) 4  `      CountryChart )p#*     NSappliesto"software"   NSColumn1 G+ %, forequipmentcontrolled ,%- by3A001.bto3A001.f, '- 3A002,and3B . ATappliestoentireentry L  x ATColumn1 0  D LicenseRequirementNotes :See743.1of _ 82 theEARforreportingrequirementsforexports ; 3 underLicenseExceptions.  4  LicenseExceptions   6  D CIV:  N/A sL 8 0 D TSR:0D(#D(##&w%%&wr#Yes,exceptfor softwarespecially K$ 9 designedforthe developmentor # :  productionofTravelingWave  ; TubeAmplifiersdescribedin  < 3A001.b.8havingoperating  = frequenciesexceeding18GHz.&w%%&w\>(#(#  ListofItemsControlled  3 @  D Unit:$value B 0 D #&w%%&w#RelatedControls: Softwarespecially C designedforthe developmentor lD  productionofthefollowingequipmentis kDE undertheexportlicensingauthorityofthe CF DepartmentofState,DirectorateofDefense G TradeControls(22CFRpart121):1.) H Whenoperatingatfrequencieshigherthan31 I GHzand spacequalified:Helixtubes |J (travelingwavetubes(TWT))definedin {TK 4danD!O  5  3A001.b.1.a.4.c6!Otire  7o;microwavesolidstate S ,L amplifiersdefinedin4eo-!O  5  3A001.b.4.b6!Otire  7o;microwave +!M  assembliesdefinedin4gD^!O  5  3A001.b.66!O  7f!;and "N travelingwavetubeamplifiers(TWTA) "O definedin4iDe!O  5  3A001.b.86!O  7m;2.) Spacequalified #P andradiationhardenedphotovoltaicarrays $dQ definedin4j!O  5  3A001.e.1.c6!O  7}!Ԁ(i.e.,nothaving c%<R siliconcellsorsingle,dualortriplejunction ;& S solarcellsthathavegalliumarsenideasone ' T ofthejunctions),spacecraft/satellitesolar '!U concentratorsandbatteries;and3.) Space ("V qualifiedatomicfrequencystandardsdefined )t#W in4k!O  5  3A002.g.26 !O!  7O.Seealso4l !O  5  3D1016!O   7s*L$XD(#D(# 0 D RelatedDefinitions:Forpurposesof K+$%Y photovoltaicarraysin3A001.e.1.c,an_array #,%ZD(#D(# predominatelyconsistsof:asubstrate;solar ' cellshavingsiliconcellsorhavingsingle,  dual,andortriplejunctionsolarcellsthat  havegalliumarsenideasoneofthejunctions;  _coverglass_;ultravioletcoating(s);and  ` bondingagent(s).Spacecraft/satellite:solar _ 8 concentrators,powerconditionersandor 7  controllers,bearingandpowertransfer   assembly,andordeployment   hardware/systemsarecontrolledunderthe    exportlicensingauthorityoftheDepartment p  ofState,DirectorateofDefenseTrade oH  Controls(22_CFR_Ԁpart121).&w%%&wG    Items:   Thelistofitemscontrollediscontainedinthe   _ECCN_Ԁheading.   @   #&w%%&w~#3D002 Softwarespeciallydesignedforthe /  useofanyofthefollowing(seeListofItems  Controlled).&w%%&w    LicenseRequirements  h   ReasonforControl:NS,AT ? Control(s) 4  `      CountryChart    NSappliestoentireentry   NSColumn1 x ATappliestoentireentry   ATColumn1 O (  LicenseExceptions  !!   _CIV_: 4 N/A ##   TSR: 4 Yes  $d$  ListofItemsControlled  ;& &   Unit:$value '!( #&w%%&wI#&w%%&wXlX%&w#XlXXXly##&w%XXl#&w%%&w  RelatedControls:Alsosee4} !O  5  3D9916M!Oa!  7ݾ. (")   RelatedDefinitions:N/A )#*   Items: *`$+ #&w%%&w#a.  Equipmentcontrolledby3B001.a.tof.;or 7,&- Їb. D Equipmentcontrolledby3B002.&w%%&w '-  #&w%%&w#3D003&w%%&wPhysics-basedsimulation software 0 speciallydesignedforthe developmentof  `1 lithographic,etchingordepositionprocesses _ 82 fortranslatingmaskingpatternsintospecific 7 3 topographicalpatternsinconductors,  4 dielectricsorsemiconductormaterials.#&w%%&wy#&w%%&w   5  LicenseRequirements  p7  D ReasonforControl:NS,AT G 9 Control(s)         L  x CountryChart  ;  D NSappliestoentireentry L  x NSColumn1  = ATappliestoentireentry L  x ATColumn1 W0?  LicenseExceptions  A  D _CIV_:  N/A C  D TSR:  Yes   hD  D  p          L  x #&w%%&w%#ListofItemsControlled  ?F  D Unit:$value H 0 D RelatedControls:  N/AID(#D(# 0 D RelatedDefinitions:1.)Libraries,design xJ attributesorassociateddataforthedesignof wPK semiconductordevicesorintegratedcircuits O (L areconsideredas technology.2.) '!M Physics-basedin3D003meansusing !N computationstodetermineasequenceof "O physicalcauseandeffecteventsbasedon #P physicalproperties(e.g.,temperature, $`Q pressure,diffusionconstantsand _%8R semiconductormaterialsproperties).7& SD(#D(#  D Items: ' T  D Thelistofitemscontrollediscontainedinthe ("V _ECCN_Ԁheading. )p#W  &w%%&w ,%Z 3D004  Softwarespeciallydesignedforthe '  developmentoftheequipmentcontrolledby  3A003.    #&w%%&wO#LicenseRequirements   `   ReasonforControl:NS,AT 7  Control(s) 4  `      CountryChart   NSappliestoentireentry   NSColumn1 p  ATappliestoentireentry   ATColumn1 G   LicenseExceptions      _CIV_: 4 N/A     TSR: 4 Yes  \  ListofItemsControlled  3    Unit:$value    RelatedControls:N/A    RelatedDefinitions:N/A l   Items: kD Thelistofitemscontrollediscontainedinthe  _ECCN_Ԁheading.&w%%&w  #&w%%&wB# % h 3D101&w%%&w Softwarespeciallydesignedor {T modifiedforthe useofequipmentcontrolled S , by3A101.b.#&w%%&w#  +!  %h LicenseRequirements  ""   ReasonforControl:MT,AT $d$ Control(s) 4  `      CountryChart ;& &   MTappliestoentireentry   MTColumn1 '!( ATappliestoentireentry   ATColumn1 )t#*   #,%- LicenseExceptions  '-  D _CIV_:  N/A /  D TSR:  N/A   0  ListofItemsControlled  c <2  D Unit:$value  4  D RelatedControls:N/A  5  D RelatedDefinitions:N/A  6  D Items: t7 Thelistofitemscontrollediscontainedinthe K$ 9 _ECCN_Ԁheading. # :  3D980 Softwarespeciallydesignedforthe  =  development, production,or useof \> itemscontrolledby3A980and3A981.  [4?  LicenseRequirements   A  D ReasonforControl:CC,AT C Control(s)         L  x CountryChart kDE  D CCappliestoentireentry L  x CCColumn1 G ATappliestoentireentry L  x ATColumn1 I  LicenseExceptions  {TK  D _CIV_:  N/A /!M  D TSR:  N/A "N  D ListofItemsControlled  #P  D Unit:$value g%@R  D RelatedControls:N/A ?& S  D RelatedDefinitions:N/A ' T  D Items: '!U Thelistofitemscontrollediscontainedinthe )x#W _ECCN_Ԁheading. w*P$X  ',&Z  % | 3D991 Softwarespeciallydesignedforthe '  development, production,or useof  electronicdevicesorcomponentscontrolledby  3A991,generalpurposeelectronicequipment  controlledby3A992,ormanufacturingand  ` testequipmentcontrolledby3B991and3B992; _ 8 or softwarespeciallydesignedforthe use 7  ofequipmentcontrolledby3B001.gand.h.%|     LicenseRequirements       ReasonforControl:AT oH  Control(s) 4  `      CountryChart     ATappliestoentireentry   ATColumn1    LicenseExceptions  X   _CIV_: 4 N/A 3    TSR: 4 N/A     ListofItemsControlled     Unit:$value kD   RelatedControls:N/A C   RelatedDefinitions:N/A    Items:  Thelistofitemscontrollediscontainedinthe | _ECCN_Ԁheading. {T     E.TECHNOLOGY  "!   % 7 3E001XlX%&w #&w%XXl # TechnologyaccordingtotheGeneral $d$ TechnologyNoteforthe developmentor w%P%  productionofequipmentormaterials O&( & controlledby3A(except3A292,3A980,3A981, ''!' 3A991or3A992),3B(except3B991or3B992) '!( or3C(except3C992).  (") %7  LicenseRequirements  *`$+   ReasonforControl:NS,MT,NP,AT 7,&- ЇControl(s)0  0(#(#0(#(#0 (#(#0L (# (#0xL(#L(#CountryChart'-x(#x(# NSappliesto technology0 L 0xL(#L(#NSColumn1/x(#x(# foritemscontrolledby 0 3A001,3A002,3B001,  `1 3B002,or3C001to3C005 _ 82 MTappliesto technology x MTColumn1  4 forequipmentcontrolledby  5 3A001or3A101forMT  6 reasons p7 NPappliesto technology0 L 0xL(#L(#NPColumn1G 9x(#x(# forequipmentcontrolledby  : 3A001,3A201,or3A225to  ; 3A233forNPreasons  < ATappliestoentireentry0 L 0xL(#L(#ATColumn1X>x(#x(#  D LicenseRequirementNote: See743.1of /@ theEARforreportingrequirementsforexports  A underLicenseExceptions. B &w%%&w LicenseExceptions  lD  D _CIV_:0  #&w%%&w#N/A&w%%&wG F(#(# 0 D TSR:0D(#D(##&w%%&w#Yes,exceptN/AforMT,and G  technologyspeciallydesignedfor H the developmentor productionof I TravelingWaveTubeAmplifiers J describedin3A001.b.8having XK operatingfrequenciesexceeding18 W 0L _GHz_.&w%%&wԀ/!M(#(# #&w%%&w# ListofItemsControlled  "O  D Unit:N/A $hQ 0 D RelatedControls:1.)Seealso4n !O  5  3E1016!O6   7 !Ԁand g%@R 4~ D!O  5  3E2016L!O`   7 9$.2.) Technologyaccordingtothe ?& S GeneralTechnologyNoteforthe ' T  developmentor productionofthe '!U followingcommoditiesisundertheexport ("V licensingauthorityoftheDepartmentofState, )x#W DirectorateofDefenseTradeControls(22 w*P$X _CFR_Ԁpart121):(a)Whenoperatingat O+(%Y frequencieshigherthan31_GHz_Ԁand space ',&ZD(#D(# qualified:helixtubes(travelingwavetubes ' (_TWT_))definedin4o !O  5  3A001.b.1.a.4.c6!O6   7 ;  microwavesolidstateamplifiersdefinedin  4p !O  5  3A001.b.4.b6!O6   7 ;microwave assemblies  definedin4q !O  5  3A001.b.66!O6   7 ;ortravelingwavetube  ` amplifiers(_TWTA_)definedin4rn!O  5  3A001.b.86!Oe  7n;(b) _ 8  Spacequalifiedandradiationhardened 7  photovoltaicarraysdefinedin4snF!O  5  3A001.e.1.c6!Oe  7n&   (i.e.,nothavingsiliconcellsorsingle,dualor   triplejunctionsolarcellsthathavegallium    arsenideasoneofthejunctions),and p  spacecraft/satellitesolarconcentratorsand oH  batteries;and(c) Spacequalifiedatomic G  frequencystandardsdefinedin4tn!O  5  3A002.g.26 !O( e  7nV .  0  RelatedDefinition:Forpurposesof   photovoltaicarraysin3A001.e.1.c,anarray   predominatelyconsistsof:asubstrate;solar   cellshavingsiliconcellsorhavingsingle, X dual,andortriplejunctionsolarcellsthat W0 havegalliumarsenideasoneofthejunctions; / _coverglass_;ultravioletcoating(s);and  bondingagent(s).Spacecraft/satellite:solar  concentrators,powerconditionersandor  controllers,bearingandpowertransfer h assembly,andordeployment g@ hardware/systemsarecontrolledunderthe ? exportlicensingauthorityoftheDepartment  ofState,DirectorateofDefenseTrade  Controls(22_CFR_Ԁpart121).   Items: x Thelistofitemscontrollediscontainedinthe O ( _ECCN_Ԁheading. '!     Note1 :3E001doesnotcontrol technologyfor "" the productionofequipmentorcomponents ## controlledby3A003. $b$    Note2 :3E001doesnotcontrol technologyfor 9& & the developmentor productionofintegrated ' ' circuitscontrolledby3A001.a.3toa.12,having '!( allofthefollowing:   (")   a) Using technologyof0.5%mormore; )t#* and u*N$+   b) Notincorporatingmultilayerstructures. M+&%,    ',&-  D  p TechnicalNote :Thetermmultilayer '- structuresinNote2of3E001doesnotinclude . devicesincorporatingamaximumofthreemetal / layersandthree_polysilicon_Ԁlayers.&w%%&w 0 #&w%%&w)# 3E002TechnologyaccordingtotheGeneral 9 3 TechnologyNoteotherthanthatcontrolledin  4 3E001forthe developmentor production  5 ofa microprocessormicrocircuit, micro  6 computermicrocircuitand_microcontroller_ r7 microcircuitcore,havinganarithmeticlogic qJ 8 unitwithanaccesswidthof32bitsormore I" 9 andanyofthefollowingfeaturesor ! : characteristics(seeListofItemsControlled).   ;  LicenseRequirements   =  D ReasonforControl:NS,AT Y2? Control(s)         L 0 x CountryChart Ax(#x(#  D NSappliestoentireentry L  x NSColumn1 C ATappliestoentireentry L  x ATColumn1 iBE  LicenseExceptions  G  D _CIV_:0  Yes,fordeemedexports,asdescribed I in734.2(b)(2&w%%&w)(ii)oftheEAR,#&w%%&w.#Ԁof ~J  technologyforthe development }VK or productionofgeneralpurpose U .L microprocessorswithaNXXaOXԀvector -!M processorunitwithoperandlengthof $"N 64-bitorless,64-bitfloating #O operationsnotexceeding32 $P _GFLOPS_,or16-bitormore $Q floating-pointoperationsnot %R exceeding32_GMACS_Ԁ(billionsof & S 16bitfixedpointmultiply '!T accumulateoperationspersecond)O#X0#OXN#/#Nf  . ("U DeemedexportsunderLicense )#V Exception_CIV_Ԁaresubjecttoa *v$W ForeignNationalReview(_FNR_) +g%X(#(# _requirement,see740.5oftheEAR ' formoreinformationabouttheFNR.  LicenseExceptionCIVdoesnot   applytoECCN3E002technology  alsorequiredforthedevelopmentor   productionofitemscontrolledunder   ECCNsbeginningwith3A,3B,or   3C,ortoECCN3E002technology   alsocontrolledunderECCN3E003. 44   TSR: 4 Yes N#z2#O#aX82# y   ListofItemsControlled  q    Unit:N/A H!  0  RelatedControls:N/A     RelatedDefinitions:N/A     Items:  a.  Avectorprocessorunitdesignedtoperform Y morethantwocalculationsonfloating-point X1 vectors(onedimensionalarraysof32-bitorlarger 0  numbers)simultaneously;     TechnicalNote: Avectorprocessingunitis  aprocessorelementwithbuilt-ininstructionsthat k performmultiplecalculationsonfloating-point jC vectors(one-dimensionalarraysof32-bitor B largernumbers)simultaneously,havingatleast  onevectorarithmeticlogicunit.  b.  Designedtoperformmorethantwo64-bitor  { largerfloating-pointoperationresultspercycle;or z!S c.  Designedtoperformmorethanfour16-bit *#! fixed-pointmultiply-accumulateresultspercycle $" (e.g.,digitalmanipulationofanaloginformation $# thathasbeenpreviouslyconvertedintodigital %$ form,alsoknownasdigitalsignalprocessing). &c %    Note:  4 3E002.cdoesnotcontroltechnology :("' formultimediaextensions. )"(   Notes : `       <  h    *$*     1.  4 3E002doesnotcontrol technology +w%+ forthe developmentor productionof x,Q&, microprocessorcores,havingallofthefollowing: ',  D  p  D  p   a .Using technologyatorabove . 0.130%m;and /  D  p   b. Incorporatingmultilayer a :1 structureswithfiveorfewermetallayers. ; 2  D  p 2.   3E002includes technologyfor  4 digitalsignalprocessorsanddigitalarray  5 processors.&w%%&w v6 #&w%%&w @#&w%%&w #&w%%&wj@#&w%%&w #&w%%&w@#3E003Other"technology"forthe % 9 "development"or"production"ofitems  : describedintheListofItemsControlled.   ;  LicenseRequirements  ^=  D ReasonforControl:NS,AT 5? Control(s)         L 0 x CountryChartAx(#x(#  D NSappliestoentireentry L  x NSColumn1 nC ATappliestoentireentry L  x ATColumn1 EE  LicenseExceptions  G  D CIV:  N/A I  D TSR:  Yes,except.fand.g   ZJ  ListofItemsControlled  1! L  D Unit:N/A "N 0 D RelatedControls:1)Technologyforthe #O  developmentor productionof space $jP qualifiedelectronicvacuumtubesoperating i%BQ atfrequenciesof31.8GHzorhigher, A& R describedin4ws;3!O  5  3E003.g6E!OEnd(  7s;E,isundertheexport ' S licenseauthorityoftheDepartmentofState, '!T DirectorateofDefenseTradeControls(22 ("U CFRpart121);2)See4un!O  5  3E0016G!OGnd(  7s;GGԀforsiliconon )z#V insulation(SOI)technologyforthe y*R$W  developmentor productionrelatedto Q+*%X radiationhardeningofintegratedcircuits. ),&YD(#D(#   RelatedDefinitions:N/A '   Items:  a.Vacuummicroelectronicdevices;  b.Hetero-structuresemiconductordevicessuch _ 8 ashighelectronmobilitytransistors(HEMT), 7  hetero-bipolartransistors(HBT),quantumwell   andsuperlatticedevices;      Note:  4 3E003.bdoesnotcontroltechnology p  forhighelectronmobilitytransistors(HEMT) qJ  operatingatfrequencieslowerthan31.8GHzand I"  hetero-junctionbipolartransistors(HBT) !  operatingatfrequencieslowerthan31.8GHz.   c."Superconductive"electronicdevices;   d.Substratesoffilmsofdiamondforelectronic Y2 components; 1  e.Substratesofsilicononinsulator(SOI)for  integratedcircuitsinwhichtheinsulatorissilicon  dioxide; j f.Substratesofsiliconcarbideforelectronic A components;  % v g.Electronicvacuumtubesoperatingat  frequenciesof31.8GHzorhigher.&w%%&w <  h    z %vaM#&w%%&wM#&w%%&w  #&w%%&wYN# % m 3E101&w%%&w TechnologyaccordingtotheGeneral )!  TechnologyNoteforthe useofequipmentor "!  softwarecontrolledby3A001.a.1or.2, "" 3A101,or3D101.#&w%%&wN#  ## %mN LicenseRequirements  a%:%   ReasonforControl:MT,AT ' ' Control(s) 4  `      CountryChart (")   MTappliestoentireentry   MTColumn1 q*J$+ ATappliestoentireentry   ATColumn1 !,%- Ї LicenseExceptions  '-  D CIV:  N/A /  D TSR:  N/A   0  ListofItemsControlled  c <2  D Unit:N/A  4  D RelatedControls:N/A  5  D RelatedDefinitions:N/A  6  D Items: t7 Thelistofitemscontrollediscontainedinthe K$ 9 ECCNheading. # :  3E102 TechnologyaccordingtotheGeneral  = TechnologyNoteforthe developmentof \>  softwarecontrolledby3D101.  [4?  LicenseRequirements   A  D ReasonforControl:MT,AT C Control(s)         L  x CountryChart kDE  D MTappliestoentireentry L  x MTColumn1 G ATappliestoentireentry L  x ATColumn1 I  LicenseExceptions  {TK  D CIV:  N/A +!M  D TSR:  N/A   "N  ListofItemsControlled  #P  D Unit:N/A c%<R  D RelatedControls:N/A ' T  D RelatedDefinitions:N/A '!U  D Items: ("V Thelistofitemscontrollediscontainedinthe s*L$X ECCNheading. K+$%Y  #,%Z Ї % 8 3E201 TechnologyaccordingtotheGeneral ' TechnologyNoteforthe useofequipment  controlledby3A001.e.2or.e.3,3A201or  3A225to3A233.   %8qX LicenseRequirements  _ 8   ReasonforControl:NP,AT   Control(s)0 4 0` 440 ` ` 0  0  0  CountryChart   NPappliesto technology0 0  NPColumn1oH  forequipmentcontrolledby G  3A001.e.2,or.e.3,3A201or   3A225to3A233forNP   reasons   ATappliestoentireentry0 0  ATColumn1X &w%%&w LicenseExceptions  /   CIV: 4 N/A    TSR: 4 N/A    ListofItemsControlled  g@   Unit:N/A    RelatedControls:N/A    RelatedDefinitions:N/A    Items: x Thelistofitemscontrollediscontainedinthe O ( ECCNheading. '!   % W 3E292 TechnologyaccordingtotheGeneral ## TechnologyNoteforthe development, $`$  production,or useofequipmentcontrolled _%8% by3A292.  7& & %WZ^ LicenseRequirements  '!(   ReasonforControl:NP,AT )p#* Control(s) 4  `      CountryChart G+ %,  ,%- NPappliestoentireentry L  x NPColumn2 '- ATappliestoentireentry L  x ATColumn1 /  LicenseExceptions   `1  D CIV:  N/A 7 3  D TSR:  N/A    4  ListofItemsControlled   6  D Unit:N/A oH 8  D RelatedControls:N/A G 9  D RelatedDefinitions:N/A  :  D Items:  ; Thelistofitemscontrollediscontainedinthe  = ECCNheading. X>  D 3E980 Technologyspeciallydesignedfor A  development, production,or useofitems B controlledby3A980and3A981.  C  LicenseRequirements  g@E  D ReasonforControl:CC,AT G Control(s)         L  x CountryChart I  D CCappliestoentireentry L  x CCColumn1 wPK ATappliestoentireentry L  x ATColumn1 '!M  LicenseExceptions  "O  D CIV:  N/A $dQ  D TSR:  N/A   c%<R  ListofItemsControlled  ' T  D Unit:N/A ("V  D RelatedControls:N/A )t#W  D RelatedDefinitions:N/A s*L$X  D Items: K+$%Y  #,%Z Thelistofitemscontrollediscontainedinthe ' ECCNheading.    3E991#&w%%&w\# Technologyforthe development,  `  production,or useofelectronicdevicesor _ 8 componentscontrolledby3A991,general 7  purposeelectronicequipmentcontrolledby   3A992,ormanufacturingandtestequipment   controlledby3B991or3B992,ormaterials    controlledby3C992.&w%%&w  p   LicenseRequirements  G    ReasonforControl:AT   Control(s) 4  `      CountryChart     ATappliestoentireentry   ATColumn1 W0  LicenseExceptions     CIV: 4 N/A    TSR: 4 N/A  l  ListofItemsControlled  C    D Unit:N/A '  D RelatedControls:N/A   D RelatedDefinitions:N/A   D Items:  Thelistofitemscontrollediscontainedinthe _ 8 ECCNheading. 7    #&w%%&wi#EAR99ItemssubjecttotheEARthatarenot  # elsewherespecifiedinthisCCLCategoryorin p$ anyothercategoryintheCCLaredesignated oH % bythenumberEAR99. &w%%&w G & #&w%%&wn#&w%%&w@  < #&w%%&wn#