NIST Materials Science and Engineering Laboratory - Polymers Division Staff- Vivek Prabhu

NIST Materials Science and Engineering Laboratory - Polymers Division Staff- Vivek Prabhu Polymer division banner

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	Polymers Main Page > Staff Directory > Detail.. Vivek M. Prabhu , Ph.D.
	Chemical Engineer Electronics Materials
	Phone:	(301) 975-3657
	Fax:	(301) 975-3928
	Email:	vprabhu@nist.gov
	Mail:	8541

	Research Interests Charged polymer (polyelectrolytes) dynamics and kinetics of dissolution of thin films and resulting surface roughness. Photoresist technology Kinetics of polymer dissolution Polyelectrolytes in solution and at interfaces Reaction-diffusion processes Postdoctoral Opportunity Professional Background 1996 B.S. Chemical Engineering , Virginia Polytechnic Institute and State University 2001 Ph.D. Polymer Science and Engineering from University of Massachusetts-Amherst. Dissertation: "Phase Behavior of Polyelectrolytes" Advisor: Professor M. Muthukumar 2001-2003, NRC Postdoc, Polymers Division 2003-Present, Staff member, Polymers Division Publications 8 Sept 2008 Note: links to a few papers have been fixed for access Just appeared in JACS ASAP Structure and Properties of Small Molecule-Polymer Blend Semiconductors for Organic Thin Film Transistors.J. Kang,N. Shin,D.Y.Jang,V.M.Prabhu,and D.Y. Yoon, J. of the American Chemical Society,published on Web 23 August 2008. Structure and Properties of Small Molecule-Polymer Blend Semiconductors for Organic Thin Film Transistors.J. Kang,N. Shin,D.Y.Jang,V.M.Prabhu,and D.Y. Yoon, J. of the American Chemical Society, 130, 12273-12275(2008). pdf See NIST Tech Beat Article - Bottoms Up: Better Organic Semiconductors for Printable Electronics Polyelectrolytes, Counterion distribution and dynamics Counterion structure and dynamics in polyelectrolyte solutions. Prabhu, V. M. Current Opinion in Colloid & Interface Science, 10 (1-2), 2-8 (2005).pdf Direct measurement of the counterion distribution within swollen polyelectrolyte films. Prabhu, V. M.; Vogt, B. D.; Wu, W. L.; Douglas, J. F.; Lin, E. K.; Satija, S. K.; Goldfarb, D. L.; Ito, H. Langmuir, 21 (15), 6647-6651(2005).).pdf Counterion associative behavior with flexible polyelectrolytes, V. M. Prabhu, D. Bossev, N. Rosov, and E.J. Amis. Journal of Chemical Physics, 121 (9), 4424-4429(2004).pdf Polyelectrolyte effects in model photoresist developer Solutions. V.M. Prabhu, R.L. Jones, E.K. Lin, W.-L. Wu. Journal of Vacuum Science and Technology 21, 1403-1410, (2003).pdf Polyelectrolyte chain dimensions and concentration fluctuations near phase boundaries. V.M. Prabhu, M. Muthukumar, G.D. Wignall, Y.B. Melnichenko. Journal of Chemical Physics119,4085-4098 (2003). Dimensions of polyelectrolyte chains and concentration fluctuations in semidilute solutions of sodium-poly(styrene sulfonate) as measured by small-angle neutron scattering. V.M. Prabhu, M. Muthukumar, G.D. Wignall, Y.B. Melnichenko. Polymer 42,8935-8946(2001). Surface segregation, NEXAFS technique See Brookhaven National Laboratory NSLS Technical Highlight Quantitative depth profiling of photoacid generators in photoresist materials by near-edge x-ray absorption fine structure spectroscopy. V. M. Prabhu, S. Sambasivan, D. Fischer,L. K. Sundberg, and R. D. Allen. Applied Surface Science. 253(2), 1010-1014 (2006).pdf Near edge x-ray absorption fine structure measurements of surface segregation in 157 nm photoresist blends. Jablonski, E. L.; Prabhu, V. M.; Sambasivan, S.; Lin, E. K.; Fischer, D. A.; Goldfarb, D. L.; Angelopoulos, M.; Ito, H. Journal of Vacuum Science & Technology B, 21(6), 3162-3165(2003).pdf Polymers for Next-Generation Photolithography, Electronic materials See NIST Tech Beat Article - New Paper Reveals Nanoscale Details of Photolithography Process Featured in the EE Times - NIST aims at 32 nm Featured by Dr. Francis Sedgemore's article in Nanomaterials News - Pushing Photolithography to the Limit Lateral length scales of latent image roughness as determined by off-specular neutron reflectivity. K. A. Lavery, V.M.Prabhu, E.K. Lin, W.-l. Wu, S.K. Satija, K.-W. Choi, and M. Wormington. Applied Physics Letters, 92(1)064106(2008). pdf Direct measurement of the spatial extent of the in situ developed latent image by neutron reflectivity. V.M.Prabhu, B.D. Vogt, S. Kang, A. Rao, E.K. Lin, S.K. Satija. J. of Vacuum Science and Tech. B 25(6)2514-2520(2007). pdf Characterization of compositional heterogeneity in chemically amplified photoresist polymer thin films with infrared spectroscopy S. Kang, B.D. Vogt, W. Wu, V.M. Prabhu, D.L. VanderHart, A. Rao, E.K. Lin, and K. Turnquest. Macromolecules 40,1497-1503(2007). pdf Influence of base additives on the reaction diffusion front of model chemically amplified photoresists, B.D. Vogt, S.Kang, V.M. Prabhu, A.Rao, E.K. Lin, W.-l. Wu, S. K. Satija, and K. Turnquest, Journal of Vacuum Science and Technology B, 25,175-182(2007). pdf Exposure dose effects on the reaction-diffusion process in model EUV photoresists. K.Lavery, B.D. Vogt,V.M. Prabhu, K.-W. Choi, E.K. Lin, W.-l.Wu, S. Satija. Journal of Vacuum Science and Technology B 24, 3044-3048 (2006).pdf Measurements of the reaction-diffusion front of model chemically amplified photoresists with varying photoacid size. B.D. Vogt, S. Kang, V.M. Prabhu, E.K. Lin, S.K. Satija, K. Turnquest, and W. Wu. Macromolecules 39, 8311-8317(2006).pdf Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films. A. Rao, S. Kang, B.D. Vogt, V.M. Prabhu, E.K. Lin, W. Wu, and M. Muthukumar. Langmuir 22, 10009-10015(2006).pdf Copolymer fraction effect on acid catalyzed deprotection reaction kinetics in model 193 nm photoresists. S. Kang, V. M. Prabhu, B. D. Vogt, E. K. Lin, W.-L. Wu, K. Turnquest. Polymer, 47(18),6293-6302(2006).pdf Control of moisture at buried polymer/alumina interfaces through substrate surface modification. Vogt, B. D.; Prabhu, V. M.; Soles, C. L.; Satija, S. K.; Lin, E. K.; Wu, W. L. Langmuir, 21 (6), 2460-2464 (2005).pdf X-ray and neutron reflectivity measurements of moisture transport through model multilayered barrier films for flexible displays. Vogt, B. D.; Lee, H. J.; Prabhu, V. M.; DeLongchamp, D. M.; Lin, E. K.; Wu, W. L.; Satija, S. K. Journal of Applied Physics, 97(11) 114509 (2005). pdf Water immersion of model photoresists: interfacial influences on water concentration and surface morphology. Vogt, B. D.; Soles, C. L.; Wang, C. Y.; Prabhu, V. M.; McGuiggan, P. M.; Douglas, J. F.; Lin, E. K.; Wu, W. L.; Satija, S. K.; Goldfarb, D. L.; Angelopoulos, M. Journal of Microlithography Microfabrication and Microsystems, 4 (1) (2005).pdf Proton NMR determination of miscibility in a bulk model photoresist system: Poly(4-hydroxystyrene) and the photoacid generator, di(t-butylphenyl) iodonium perfluorooctane sulfonate. D.L. VanderHart, V.M. Prabhu, E. K. Lin, Chemistry of Materials, 16 (16), 3074-3084 (2004).pdf Correlation of the reaction front with roughness in chemically amplified photoresists. R. L. Jones, V. M. Prabhu, D. L. Goldfarb, E. K. Lin, C. L. Soles, J. L. Lenhart, W.-L. Wu, and M. Angelopoulos. ACS Symposium Series, Polymers for Microelectronics and Nanoelectronics, 874, 86-97 (2004). Advanced Measurements for Photoresist Fundamentals. V.M. Prabhu, E. K. Lin, Semiconductor Fabtech International Quarterly, 24,99-103(2004)pdf Polymer Processing Dielectric properties of nylon 6/clay nanocomposites from on-line process monitoring and off-line measurements. N. Noda, Y.-H. Lee, A.J. Bur, V.M. Prabhu, C.R. Snyder, S.C. Roth, M. McBrearty. Polymer, 46 (18), 7201-7217(2005).pdf Invited Presentations (2006-2008) Identifying chemically amplified photoresist fundamentals with neutron reflectivity,Ski Hut Workshop, Cornell University, Ithaca, NY, July 26-27, 2008. Advances in neutron research methods for photoresist fundamentals, International Conference on Electron, Ion, and Photon Beam technology & nanofabrication, Portland, OR, May 27, 2008. Fundamentals of EUV photoresists, Intel Corporation, Hillsboro, OR, November 27, 2007. Measurement Advances for Identifying Chemically Amplified Photoresistant Materials Limits, October 11, 2007, Seminar, Polymer Science Department, University of Akron, OH. Measurement Advances for Identifying Chemically Amplified Photoresistant Materials Limits, October 4, 2007, Seminar, Materials Science Program, University of Wisconsin-Madison, WI. Identifying the materials limits of chemically amplified photoresists, SPIE Microlithography Conference, Santa Clara, CA, February 28, 2007. Advanced measurement methods for next generation photoresists, SEMATECH Scaling Summit, Austin, TX, November 9, 2006. Polymers for photolithography: fundamentals probed by neutron scattering and reflectivity methods and open questions, October 10, 2006, Raman Research Institute, C. V. Raman Avenue, Sadashivanagar, Bangalore, India. Project Collaborators Polymers Division, NIST - Shuhui Kang, David VanderHart, Tom Chastek, Wen-li Wu, Chris Soles, Eric Lin, William Wallace, Charlie Guttman, Kathy Flynn Ceramics Division, NIST - Daniel A. Fischer Center for Neutron Research, NIST - Sushil K. Satija Optical Technology Division, NIST - John Woodward, Jeeseong Hwang SEMATECH - Karen Turnquest Intel - Kwang-Woo Choi (Assignee to NIST), George Thompson IBM T. J. Watson Research Center - Dario L. Goldfarb IBM Almaden Research Center - Hiroshi Ito, Robert D. Allen, William D. Hinsberg AZ Electronics - Ralph Dammel, Frank Houlihan DuPont Electronic Polymers L.P. - Jim Sounik, Michael T. Sheehan Cornell University - Christopher Ober, Anuja De Silva, Jing Sha Rhodia - Ashwin Rao SEMATECH - Agreement Completed 11/1/2006 Intel - CRADA Postdoctoral Opportunity (2007) Fundamentals of Charged Macromolecules at Interfaces This research opportunity involves the diffusion and adsorption fundamentals of charged macromolecules (polyelectrolytes, DNA, colloids, gels) at the solid-liquid interface. Many technologies, both emerging and established, depend upon and focus on charged macromolecules including the dissolution of advanced photoresists, microfluidic channel technologies to manipulate biological macromolecules such as DNA, and the controlled degradation of tissue engineering scaffold or drug delivery materials. To optimize performance and to design new applications, an improved understanding of the structure and dynamics of these molecules is needed. Because of the electrostatic interactions and connectivity of polymers the dynamics and structure of these materials are affected by subtle changes in molecular weight, dielectric constant, charge valence, ionic strength, and charge density. The perturbation of the structure and dynamics at solid-liquid interfaces is poorly understood with respect to the influence of substrate insulating or conductive boundary conditions, surface chemical and topological patterning and charge density. Model interfaces including solid supports and colloidal particles will be pursued by applying neutron reflectivity, neutron spin-echo spectroscopy, fluorescence correlation spectroscopy (FCS), total-internal reflectance (evanescent-wave)-FCS, FT-infrared spectroscopy, and quartz crystal microbalance. SPIE Proceedings - Advanced in Resist Materials The effect of EUV molecular glass architecture on the bulk dispersion of a photo-acid generator, D. L. VanderHart, A. De Silva, N. Felix, V. M. Prabhu and C. K. Ober, Proc. SPIE Int. Soc. Opt. Eng. 6923, 69231M (2008).pdf Characterization of the latent image to developed image in model EUV photoresists, J.T. Woodward, K.-W. Choi, V. M. Prabhu, S. Kang, K. A. Lavery, W.-l. Wu, M. Leeson, A. De Silva, N.M. Felix and C. K. Ober, Proc. SPIE Int. Soc. Opt. Eng. 6923, 69232B (2008).pdf A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists, S. Kang, K. Lavery, K.-W. Choi, V. M. Prabhu, W.-l. Wu, E.K. Lin, A. De Silva, N. Felix and C. Ober, Proc. SPIE Int. Soc. Opt. Eng. 6923, 692317 (2008).pdf Identifying materials limits of chemically amplified photoresists, W.-l. Wu, V.M. Prabhu and E.K. Lin, Proc. SPIE Int. Soc. Opt. Eng. 6519, 651902 (2007).pdf Effect of photo-acid generator concentration and developer strength on the patterning capabilities of a model EUV photoresist, K.-W. Choi, V.M. Prabhu, K.A. Lavery, E.K. Lin, W.-l. Wu, J.T. Woodward, M.J. Leeson, H.B. Cao, M. Chandhok, and G. Thompson, Proc. SPIE Int. Soc. Opt. Eng. 6519, 651943 (2007).pdf Evaluation of the 3D compositional heterogeneity effect on line-edge-roughness, Kang, S.H.; Wu, W.-l.; Prabhu, V.M.; Vogt, B.D.; Lin, E.K.; Turnquest, K. Proc. SPIE, 6519, 2007,65193V. pdf FTIR measurements of compositional heterogeneities, Kang, S.H.; Vogt, B.D.; Wu, W.-l.; Prabhu, V.M.; VanderHart, D.L.; Rao, A.; Lin, E.K.; Turnquest, K. Proc. SPIE, 6519, 2007, 651916. pdf Direct measurement of the in-situ developed latent image: the residual swelling fraction,Prabhu, V.M.; Vogt, B.D.; Kang, S.H.; Rao, A.; Lin, E.K.; Satija, S.K.; Wu, W.-l. Proc. SPIE, 6519, 2007, 651900. pdf Copolymer Fraction Effect On Acid Catalyzed Deprotection Reaction Kinetics In Model 193 Nm Photoresists, S. Kang, V.M. Prabhu, B.D. Vogt, E.K. Lin, W. Wu, and K. Turnquest in Proceedings of the SPIE Advances in Resist Materials and Processing XXIII, San Jose, CA(2006).pdf Fundamentals Of The Reaction-Diffusion Process In Model EUV Photoresists, K.A. Lavery, K.-W. Choi, B.D. Vogt, V.M. Prabhu, E.K. Lin, W. Wu, S. Satija, M.J. Leeson, H.B. Cao, G. Thompson, H. Ding, and D.S. Fryer in Proceedings of the SPIE Advances in Resist Materials and Processing XXIII, San Jose, CA(2006). pdf The Deprotection Reaction Front Profile For Model 193 nm Methacrylate-Based Chemically Amplified Photoresists, B.D. Vogt, S. Kang, V.M. Prabhu, A. Rao, E.K. Lin, S.K. Satija, K. Turnquest, and W. Wu in Proceedings of the SPIE Advances in Resist Materials and Processing XXIII, San Jose, CA(2006).pdf Dissolution Fundamentals Of 193-Nm Methacrylate Based Photoresists, A. Rao, S. Kang, B.D. Vogt, V.M. Prabhu, E.K. Lin, W. Wu, K. Turnquest, and W.D. Hinsberg in Proceedings of the SPIE Advances in Resist Materials and Processing XXIII, San Jose, CA(2006).pdf Interfacial structure of photoresist thin films in developer solutions, V.M. Prabhu, B.D. Vogt, W.-l. Wu, J.F. Douglas, E.K. Lin, S.K. Satija, D.L. Goldfarb, H. Ito, Proc. SPIE, 5753, 292-301(2005).pdf Water distribution within immersed polymer films, B.D. Vogt, C.L. Soles, V.M. Prabhu, S.K. Satija, E.K. Lin, W.-l. Wu, Proc. SPIE, 5753, 31-39(2005).pdf Resolution limitations in chemically amplified photoresist systems, Schmid, G. M.; Stewart, M. D.; Wang, C.-Y.; Vogt, B. D.; Prabhu, V. M.; Lin, E. K.; Willson, C. G. Proc. SPIE, 5376, 333-342 (2004).pdf Fundamentals of Developer-Resist Interactions for Line-Edge Roughness and CD control in Model 248 nm and 157 nm Photoresists, Prabhu, V. M.; Wang, M. X.; Jablonski, E. L.; Vogt, B. D.; Lin, E. K.; Wu, W. L.; Goldfarb, D. L.; Angelopoulos, M.; Ito, H. Proc. SPIE, 5376, 443-451 (2004).pdf Measurements of water distribution in thin lithographic films, Vogt, B. D.; Soles, C. L.; Prabhu, V. M.; Jones, R. L.; Wu, W. L.; Lin, E. K.; Goldfarb, D. L.; Angelopoulos, M. Proc. SPIE, 5376, 56-62 (2004).pdf E.L. Jablonski, V.M. Prabhu, S. Sambasian, D.A. Fischer, E.K. Lin, D.L. Goldfarb, M. Angelopoulos, and H. Ito, Surface and Bulk Chemistry of Chemically Amplified Photoresists: Segregation in Thin Films and Environmental Stability Issues, Proc. SPIE, 5376, 302-311 (2004).pdf Polyelectrolyte Effects in Model Photoresist Developer Solutions: Roles of Base Concentration and Added Salts, V. M. Prabhu, R. L. Jones, C. L. Soles, E. K. Lin, W. Wu, D. L. Goldfarb, and M. Angelopoulos. In Proceedings of SPIE Vol. 5039, 404-414 (2003).pdf Deprotection Volume Characteristics and Line Edge Morphology in Chemically Amplified Resists, R.L. Jones, T. Hu, V.M. Prabhu, C.L. Soles, E.K. Lin, W. Wu, D. L. Goldfarb, M. Angelopoulos, B. C. Trinque, and C. G. Willson. In Proceedings of SPIE Vol. 5039, 1031 (2003).pdf Polymer Dynamics and Diffusive Properties in Ultra-Thin Photoresist Films, C. L. Soles, R. L. Jones, J. L. Lenhart, V. M. Prabhu, W. Wu, E. K. Lin, D. L. Goldfarb, M. Angelopoulos. In Proceedings of SPIE Vol. 5039, 366(2003).pdf Updated 9/10/2008 vmp




	NIST Materials Science & Engineering Laboratory - Polymers Division